JP5620056B2 - フッ素系溶剤の精製方法 - Google Patents
フッ素系溶剤の精製方法 Download PDFInfo
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- JP5620056B2 JP5620056B2 JP2008264361A JP2008264361A JP5620056B2 JP 5620056 B2 JP5620056 B2 JP 5620056B2 JP 2008264361 A JP2008264361 A JP 2008264361A JP 2008264361 A JP2008264361 A JP 2008264361A JP 5620056 B2 JP5620056 B2 JP 5620056B2
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- water
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- insoluble
- fluorine
- metal
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- 239000002904 solvent Substances 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 29
- 229910052731 fluorine Inorganic materials 0.000 title claims description 28
- 239000011737 fluorine Substances 0.000 title claims description 28
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims description 25
- 238000000746 purification Methods 0.000 title claims description 9
- 239000000243 solution Substances 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 22
- 229910021645 metal ion Inorganic materials 0.000 claims description 22
- 239000007864 aqueous solution Substances 0.000 claims description 19
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 17
- 229910017604 nitric acid Inorganic materials 0.000 claims description 17
- 230000002378 acidificating effect Effects 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000011109 contamination Methods 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 6
- 229920000573 polyethylene Polymers 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- -1 fluorine ester Chemical class 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000007848 Bronsted acid Substances 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Detergent Compositions (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
Description
R1‐O‐R2 (1)
(R1及びR2はそれぞれ独立にフルオロカーボン基または炭化水素基を表す。R1及びR2のうち少なくとも1つはフルオロカーボン基である。)
(1)測定する溶液を2000g、ポリテトラフルオロエチレン(PTFE)製のビーカーに注ぎ、ビーカーを250℃のホットプレートの上に置き、揮発成分を揮発させた。
(2)濃度が70%の超微量精密分析用硝酸(和光純薬工業製)を超純水で希釈し濃度が約4質量%の硝酸を得た後、これを約50ml、PTFE製のビーカーに入れた。
(3)PTFE製のビーカーを150℃のホットプレートの上に1時間置いて、ビーカーに残った金属を溶解させた。
(4)硝酸に溶けた金属イオン量を、ICP-MS(Agilent社製、7500cs)を用いて測定した。硝酸中の金属イオン量、硝酸の量、揮発させた溶液の量を用いて、溶液中の金属および金属イオンの含有量を算出した。
(5)以上の測定は全てクラス1000(米国連邦規格FS-209D)のクリーンルーム内で行った。
以下の方法で、フッ素系溶剤(住友スリーエム社製Novec(商標)HFE-7100:C4F9OCH3)を精製した。Novec(商標)HFE-7100の水への溶解度は12質量ppm程度である。
1質量%の硝酸溶液を超純水に変更した以外は実施例1と同じ方法で、フッ素系溶剤を精製した。精製済みのフッ素系溶剤について、金属および金属イオンの含有量測定を行った。結果を表1に示す。
実施例1と同様にして容器内部のメタルコンタミネーションを除去したPE製容器に、実施例1で使用したフッ素系溶剤と同一容器に入っていたフッ素系溶剤(住友スリーエム社製Novec(商標)HFE-7100:C4F9OCH3)を入れ、1時間放置した。その後、このフッ素系溶剤について金属および金属イオンの含有量測定を行った。結果を表1に示す。
(態様1)
非水溶性のフッ素系溶剤、金属及び金属イオンを含む溶液から非水溶性のフッ素系溶剤を精製する方法であって、
前記溶液を水または酸性水溶液で洗浄する工程、
前記水または酸性水溶液を分離して、誘導結合プラズマ質量分析装置で測定したときの金属及び金属イオンの含有量が300質量ppt以下となる非水溶性のフッ素系溶剤を得る工程、
を含む非水溶性のフッ素系溶剤の精製方法。
(態様2)
前記非水溶性のフッ素系溶剤がヒドロフルオロエーテルである態様1に記載のフッ素系溶剤の精製方法。
(態様3)
前記酸性水溶液が硝酸水溶液である態様1または2に記載のフッ素系溶剤の精製方法。
(態様4)
前記非水溶性のフッ素系溶剤は電気・電子部品の精密洗浄用の洗浄液又は半導体ウエハ洗浄用の洗浄液である、態様1から3の何れか1項に記載の精製方法。
Claims (4)
- 非水溶性のフッ素系溶剤、金属及び金属イオンを含む溶液から非水溶性のフッ素系溶剤を精製する方法であって、
前記溶液を酸性水溶液で洗浄する工程、
前記酸性水溶液を分離して、誘導結合プラズマ質量分析装置で測定したときの金属及び金属イオンの含有量が300質量ppt以下となる非水溶性のフッ素系溶剤を得る工程、
を含む非水溶性のフッ素系溶剤の精製方法。 - 前記非水溶性のフッ素系溶剤がヒドロフルオロエーテルである請求項1に記載のフッ素系溶剤の精製方法。
- 前記酸性水溶液が硝酸水溶液である請求項1または2に記載のフッ素系溶剤の精製方法。
- 前記非水溶性のフッ素系溶剤は電気・電子部品の精密洗浄用の洗浄液又は半導体ウエハ洗浄用の洗浄液である、請求項1から3の何れか1項に記載の精製方法。
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JP2008264361A JP5620056B2 (ja) | 2008-10-10 | 2008-10-10 | フッ素系溶剤の精製方法 |
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JP2008264361A JP5620056B2 (ja) | 2008-10-10 | 2008-10-10 | フッ素系溶剤の精製方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010090348A JP2010090348A (ja) | 2010-04-22 |
JP5620056B2 true JP5620056B2 (ja) | 2014-11-05 |
Family
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JP2008264361A Active JP5620056B2 (ja) | 2008-10-10 | 2008-10-10 | フッ素系溶剤の精製方法 |
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JP (1) | JP5620056B2 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2617828B1 (fr) * | 1987-07-10 | 1990-12-07 | Rhone Poulenc Chimie | Procede de separation des terres rares par extraction liquide-liquide mettant en oeuvre des diluants du type fluores |
JP2786106B2 (ja) * | 1994-03-28 | 1998-08-13 | セントラル硝子株式会社 | フルオロメチル−1,1,1,3,3,3−ヘキサフルオロイソプロピルエーテルの精製方法 |
JPH11130703A (ja) * | 1997-10-24 | 1999-05-18 | Tokuyama Corp | フッ素系不活性液体の精製方法 |
JP2002270568A (ja) * | 2001-03-12 | 2002-09-20 | Mimasu Semiconductor Industry Co Ltd | 半導体ウエーハの製造方法および金属モニタリング装置 |
JP2006291008A (ja) * | 2005-04-08 | 2006-10-26 | Daikin Ind Ltd | フッ素系洗浄溶媒 |
JP5085954B2 (ja) * | 2007-02-23 | 2012-11-28 | スリーエム イノベイティブ プロパティズ カンパニー | フッ素系溶剤含有溶液の精製方法及び精製装置ならびに洗浄装置 |
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