JP5618638B2 - プラズマ処理装置または試料載置台 - Google Patents

プラズマ処理装置または試料載置台 Download PDF

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Publication number
JP5618638B2
JP5618638B2 JP2010129522A JP2010129522A JP5618638B2 JP 5618638 B2 JP5618638 B2 JP 5618638B2 JP 2010129522 A JP2010129522 A JP 2010129522A JP 2010129522 A JP2010129522 A JP 2010129522A JP 5618638 B2 JP5618638 B2 JP 5618638B2
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Prior art keywords
wafer
heater
temperature
film
dielectric film
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JP2010129522A
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English (en)
Japanese (ja)
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JP2011258614A5 (enExample
JP2011258614A (ja
Inventor
智行 渡辺
智行 渡辺
薬師寺　守
守 薬師寺
大本　豊
豊 大本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2010129522A priority Critical patent/JP5618638B2/ja
Priority to US12/854,242 priority patent/US9150967B2/en
Publication of JP2011258614A publication Critical patent/JP2011258614A/ja
Publication of JP2011258614A5 publication Critical patent/JP2011258614A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)
JP2010129522A 2010-06-07 2010-06-07 プラズマ処理装置または試料載置台 Active JP5618638B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010129522A JP5618638B2 (ja) 2010-06-07 2010-06-07 プラズマ処理装置または試料載置台
US12/854,242 US9150967B2 (en) 2010-06-07 2010-08-11 Plasma processing apparatus and sample stage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010129522A JP5618638B2 (ja) 2010-06-07 2010-06-07 プラズマ処理装置または試料載置台

Publications (3)

Publication Number Publication Date
JP2011258614A JP2011258614A (ja) 2011-12-22
JP2011258614A5 JP2011258614A5 (enExample) 2013-07-18
JP5618638B2 true JP5618638B2 (ja) 2014-11-05

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JP2010129522A Active JP5618638B2 (ja) 2010-06-07 2010-06-07 プラズマ処理装置または試料載置台

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US (1) US9150967B2 (enExample)
JP (1) JP5618638B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5618638B2 (ja) * 2010-06-07 2014-11-05 株式会社日立ハイテクノロジーズ プラズマ処理装置または試料載置台
US8944080B2 (en) * 2011-08-02 2015-02-03 Visera Technologies Company Limited Cleaning system, cleaning device, and method of using cleaning device
US9281226B2 (en) * 2012-04-26 2016-03-08 Applied Materials, Inc. Electrostatic chuck having reduced power loss
JP5975755B2 (ja) * 2012-06-28 2016-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6276919B2 (ja) 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
EP2960933B1 (en) * 2013-02-25 2017-12-06 Kyocera Corporation Sample holding tool
JP6202720B2 (ja) * 2013-03-29 2017-09-27 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6313983B2 (ja) * 2014-01-29 2018-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6277015B2 (ja) * 2014-02-28 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102372801B1 (ko) * 2014-07-08 2022-03-10 와틀로 일렉트릭 매뉴팩츄어링 컴파니 접합 층의 통합 온도 감지를 갖춘 접합 조립체
JP6469985B2 (ja) * 2014-07-28 2019-02-13 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6424049B2 (ja) * 2014-09-12 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6361495B2 (ja) * 2014-12-22 2018-07-25 東京エレクトロン株式会社 熱処理装置
JP6697997B2 (ja) * 2016-09-30 2020-05-27 新光電気工業株式会社 静電チャック、基板固定装置
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP6924618B2 (ja) * 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP6483296B2 (ja) * 2018-01-11 2019-03-13 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102411272B1 (ko) 2018-03-26 2022-06-22 엔지케이 인슐레이터 엘티디 정전척 히터
JP7278035B2 (ja) * 2018-06-20 2023-05-19 新光電気工業株式会社 静電チャック、基板固定装置
US11373890B2 (en) * 2018-12-17 2022-06-28 Applied Materials, Inc. Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing
JP7555197B2 (ja) * 2020-04-07 2024-09-24 株式会社日立ハイテク プラズマ処理装置
JP7060771B1 (ja) 2021-02-04 2022-04-26 日本碍子株式会社 半導体製造装置用部材
WO2024180642A1 (ja) 2023-02-28 2024-09-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の試料台の製造方法
JP2025081109A (ja) 2023-11-15 2025-05-27 キヤノントッキ株式会社 静電チャック、成膜装置、吸着方法、成膜方法、電子デバイスの製造方法、及び静電チャックの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6166897A (en) * 1997-01-22 2000-12-26 Tomoegawa Paper Co., Ltd. Static chuck apparatus and its manufacture
US20020036881A1 (en) * 1999-05-07 2002-03-28 Shamouil Shamouilian Electrostatic chuck having composite base and method
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US8038796B2 (en) * 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
JP5018244B2 (ja) * 2007-05-30 2012-09-05 住友大阪セメント株式会社 静電チャック
JP2009170509A (ja) * 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
JP5618638B2 (ja) * 2010-06-07 2014-11-05 株式会社日立ハイテクノロジーズ プラズマ処理装置または試料載置台

Also Published As

Publication number Publication date
US20110297082A1 (en) 2011-12-08
US9150967B2 (en) 2015-10-06
JP2011258614A (ja) 2011-12-22

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