JP5609164B2 - 光レシーバ装置 - Google Patents
光レシーバ装置 Download PDFInfo
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- JP5609164B2 JP5609164B2 JP2010048386A JP2010048386A JP5609164B2 JP 5609164 B2 JP5609164 B2 JP 5609164B2 JP 2010048386 A JP2010048386 A JP 2010048386A JP 2010048386 A JP2010048386 A JP 2010048386A JP 5609164 B2 JP5609164 B2 JP 5609164B2
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- 230000003287 optical effect Effects 0.000 title claims description 66
- 239000003990 capacitor Substances 0.000 claims description 72
- 239000004020 conductor Substances 0.000 claims description 29
- 238000010586 diagram Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Description
(比較例1)
図3は、第1の実施形態に係る光レシーバ装置100を説明するための図である。図3(a)は、光レシーバ装置100の上面図であり、図3(b)は切断線B−B’における要部断面図である。本実施形態は、図2に示した構成と同じ受光素子10を採用した光レシーバ装置に対して、本発明を適用したものである。
次に、第2の実施形態について説明する。第2の実施形態においては、バランスタイプの受光素子を利用した光レシーバ装置が採用されている。図4は、本実施形態に係る光レシーバ装置101の回路構成を説明する図である。
次に、第3の実施形態について説明する。第3の実施形態においては、コンデンサ31,32の上面電極31−1,32−1を共通に接続するボンディングワイヤ42が設けられている。その他の構成は、第2の実施形態と同じである。
次に、第4の実施形態について説明する。図8は、第4の実施形態に係る光レシーバ装置103の平面図である。本実施形態においては、第3の実施形態に対して、さらに受光素子キャリア30上に第2コンデンサとして機能するコンデンサ33,34を設けた態様が示されている。なお、図8は、受光素子メサ10−2,10−5およびダミーメサ10−3の回路図も併せて示している。
次に、第5の実施形態について説明する。図9は、第5の実施形態に係る光レシーバ装置104の平面図である。光レシーバ装置104は、第4の実施形態におけるコンデンサ33,34をベースキャリア50上に設けた構成を有する。なお、図9は、受光素子メサ10−2,10−5およびダミーメサ10−3の回路図も併せて示している。
10−2 受光素子メサ
10−3 ダミーメサ
20 TIA
20−1 TIAチップ
30 受光素子キャリア
31,32,33,34 コンデンサ
40,41,42,43 ボンディングワイヤ
50 ベースキャリア
100 光レシーバ装置
Claims (8)
- 出力端子となる第1電極と、接地電位とは異なる電源が接続される第2電極とを有する第1受光素子と、
前記第1受光素子と縦続接続され、前記第1電極と、接地電位とは異なる電源が接続される第3電極とを有する第2受光素子と、
アンプ素子を搭載するとともに、上面に信号電極、前記信号電極の両側にそれぞれ設けられた第1接地電極および第2接地電極からなる接続端子が設けられてなるアンプ回路と、
前記信号電極に対し、前記上面側から前記第1電極の電位を接続する第1導体と、
前記第1接地電極に対し、前記上面側から前記第1受光素子の第2電極の電位を、第1コンデンサを介して接続する第2導体と、
前記第2接地電極に対し、前記上面側から前記第2受光素子の第3電極の電位を、第2コンデンサを介して接続する第3導体と、を備える、光レシーバ装置。 - 前記第1コンデンサと前記第2コンデンサは、第4導体を介して接続されてなる、請求項1記載の光レシーバ装置。
- 前記第4導体は、前記第1コンデンサと前記第2コンデンサとの間を接続するボンディングワイヤである、請求項2記載の光レシーバ装置。
- 前記第1受光素子は、前記第1電極の電位を引き出す第1パターンと、前記第2電極および前記第3電極の電位を引き出す第2パターンと、を有する受光素子キャリアに搭載されてなる、請求項1乃至3記載の光レシーバ装置。
- 前記第2パターンは、前記第1パターンの両側に設けられ、
前記第1コンデンサおよび前記第2コンデンサは、前記第2パターンの両方に設けられてなる、請求項4記載の光レシーバ装置。 - 前記第1導体は、前記第1パターンと前記信号電極との間を接続するボンディングワイヤであり、
前記第2導体は、前記第2パターン上の前記第1コンデンサと前記第1接地電極との間を接続するボンディングワイヤであり、
前記第3導体は、前記第2パターン上の前記第2コンデンサと前記第2接地電極との間を接続するボンディングワイヤである、請求項4または5記載の光レシーバ装置。 - 前記第2電極および前記第3電極は、それぞれ、接地電位とは異なる電源に接続されてなる、請求項1記載の光レシーバ装置。
- 前記第2電極の電位に対して前記第1コンデンサと並列に前記第1コンデンサよりも容量の大きな第3コンデンサが接続されてなる、請求項1記載の光レシーバ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010048386A JP5609164B2 (ja) | 2010-03-04 | 2010-03-04 | 光レシーバ装置 |
US13/093,283 US9163982B2 (en) | 2010-03-04 | 2011-04-25 | Optical receiver device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010048386A JP5609164B2 (ja) | 2010-03-04 | 2010-03-04 | 光レシーバ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011187508A JP2011187508A (ja) | 2011-09-22 |
JP5609164B2 true JP5609164B2 (ja) | 2014-10-22 |
Family
ID=44530484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010048386A Active JP5609164B2 (ja) | 2010-03-04 | 2010-03-04 | 光レシーバ装置 |
Country Status (2)
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US (1) | US9163982B2 (ja) |
JP (1) | JP5609164B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104567954B (zh) * | 2015-02-09 | 2017-01-11 | 山西大学 | 微功率宽带光电探测器 |
US10135545B2 (en) * | 2016-06-20 | 2018-11-20 | Oclaro Japan, Inc. | Optical receiver module and optical module |
JP6878053B2 (ja) * | 2017-03-14 | 2021-05-26 | 日本ルメンタム株式会社 | 光受信モジュール及び光モジュール |
US11335768B2 (en) * | 2018-04-16 | 2022-05-17 | Semtech Corporation | Integrated high voltage capacitor |
JP2021044437A (ja) * | 2019-09-12 | 2021-03-18 | 住友電気工業株式会社 | 受光装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63114429A (ja) * | 1986-10-31 | 1988-05-19 | Nec Corp | 光受信回路 |
JPH02239674A (ja) * | 1989-03-14 | 1990-09-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2646978B2 (ja) * | 1993-12-01 | 1997-08-27 | 日本電気株式会社 | 半導体受光素子 |
US6774448B1 (en) * | 2000-11-30 | 2004-08-10 | Optical Communication Products, Inc. | High speed detectors having integrated electrical components |
JP2004128250A (ja) * | 2002-10-03 | 2004-04-22 | Toshiba Corp | 光通信モジュールおよびそれに用いられる光素子キャリア |
US7224910B2 (en) * | 2002-10-25 | 2007-05-29 | Gennum Corporation | Direct attach optical receiver module and method of testing |
KR100575950B1 (ko) * | 2003-06-20 | 2006-05-02 | 삼성전자주식회사 | 티오 캔 구조의 광수신 모듈 |
JP2006253676A (ja) * | 2005-03-08 | 2006-09-21 | Sumitomo Electric Ind Ltd | 光アセンブリ |
JP2007274032A (ja) | 2006-03-30 | 2007-10-18 | Sumitomo Electric Ind Ltd | 光受信器 |
JP4894349B2 (ja) * | 2006-05-10 | 2012-03-14 | 富士通オプティカルコンポーネンツ株式会社 | ステムおよび光モジュール |
US8936405B2 (en) * | 2006-05-19 | 2015-01-20 | Hitachi Metals, Ltd. | Multi-channel optical receiver module |
JP4894692B2 (ja) * | 2007-09-21 | 2012-03-14 | 住友電気工業株式会社 | 光送受信モジュール |
JP2009152436A (ja) * | 2007-12-21 | 2009-07-09 | Ntt Electornics Corp | 受光素子 |
JP2010041158A (ja) * | 2008-08-01 | 2010-02-18 | Yokogawa Electric Corp | 光受信器 |
CN101340244B (zh) | 2008-08-08 | 2011-08-10 | 宁波环球广电科技有限公司 | 一种光接收模块 |
US8204388B2 (en) * | 2009-07-01 | 2012-06-19 | Infinera Corporation | Transimpedance amplifier having a shared input |
-
2010
- 2010-03-04 JP JP2010048386A patent/JP5609164B2/ja active Active
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2011
- 2011-04-25 US US13/093,283 patent/US9163982B2/en active Active
Also Published As
Publication number | Publication date |
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US20110215225A1 (en) | 2011-09-08 |
US9163982B2 (en) | 2015-10-20 |
JP2011187508A (ja) | 2011-09-22 |
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