JP5602157B2 - バッチ式基板処理装置 - Google Patents
バッチ式基板処理装置 Download PDFInfo
- Publication number
- JP5602157B2 JP5602157B2 JP2011547797A JP2011547797A JP5602157B2 JP 5602157 B2 JP5602157 B2 JP 5602157B2 JP 2011547797 A JP2011547797 A JP 2011547797A JP 2011547797 A JP2011547797 A JP 2011547797A JP 5602157 B2 JP5602157 B2 JP 5602157B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pipe
- substrate processing
- chamber
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 title claims description 203
- 238000012545 processing Methods 0.000 title claims description 102
- 238000002347 injection Methods 0.000 claims description 133
- 239000007924 injection Substances 0.000 claims description 133
- 238000009792 diffusion process Methods 0.000 claims description 29
- 239000007789 gas Substances 0.000 description 331
- 238000010438 heat treatment Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 10
- 238000005192 partition Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0007371 | 2009-01-30 | ||
KR1020090007371A KR101016065B1 (ko) | 2009-01-30 | 2009-01-30 | 배치식 열처리 장치 |
KR1020090035447A KR101039153B1 (ko) | 2009-04-23 | 2009-04-23 | 대면적 기판처리 시스템의 가스 인젝터 |
KR10-2009-0035447 | 2009-04-23 | ||
PCT/KR2010/000540 WO2010087638A2 (ko) | 2009-01-30 | 2010-01-29 | 배치식 기판처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012516564A JP2012516564A (ja) | 2012-07-19 |
JP5602157B2 true JP5602157B2 (ja) | 2014-10-08 |
Family
ID=42396195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011547797A Active JP5602157B2 (ja) | 2009-01-30 | 2010-01-29 | バッチ式基板処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5602157B2 (zh) |
CN (1) | CN102301461A (zh) |
TW (1) | TW201036090A (zh) |
WO (1) | WO2010087638A2 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102106969B1 (ko) * | 2013-02-26 | 2020-05-08 | 삼성디스플레이 주식회사 | 기판 열처리 장치 및 그 방법 |
KR101527158B1 (ko) * | 2013-10-24 | 2015-06-09 | 주식회사 테라세미콘 | 배치식 기판처리 장치 |
KR101695948B1 (ko) * | 2015-06-26 | 2017-01-13 | 주식회사 테라세미콘 | 기판처리 시스템 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH021116A (ja) * | 1988-03-09 | 1990-01-05 | Tel Sagami Ltd | 熱処理装置 |
JPH03255618A (ja) * | 1990-03-05 | 1991-11-14 | Fujitsu Ltd | 縦型cvd装置 |
JPH05335247A (ja) * | 1992-05-27 | 1993-12-17 | Nec Kansai Ltd | 半導体製造装置 |
JP3844274B2 (ja) * | 1998-06-25 | 2006-11-08 | 独立行政法人産業技術総合研究所 | プラズマcvd装置及びプラズマcvd方法 |
TWI232509B (en) * | 2001-07-25 | 2005-05-11 | Tokyo Electron Ltd | Processing apparatus and processing method |
KR101022662B1 (ko) * | 2003-08-05 | 2011-03-22 | 주성엔지니어링(주) | 균일한 막 증착을 위한 챔버 및 샤워 헤드 |
JP2004179672A (ja) * | 2003-12-12 | 2004-06-24 | Hitachi Kokusai Electric Inc | 基板加熱装置及び半導体回路の形成方法 |
US20050287806A1 (en) * | 2004-06-24 | 2005-12-29 | Hiroyuki Matsuura | Vertical CVD apparatus and CVD method using the same |
KR100779118B1 (ko) * | 2005-12-09 | 2007-11-27 | 주식회사 테라세미콘 | 평판표시장치 제조시스템 |
JP4994724B2 (ja) * | 2006-07-07 | 2012-08-08 | 株式会社東芝 | 成膜装置及び成膜方法 |
JP2008034463A (ja) * | 2006-07-26 | 2008-02-14 | Hitachi Kokusai Electric Inc | 基板処理装置 |
KR100833712B1 (ko) * | 2007-02-28 | 2008-05-29 | 주식회사 테라세미콘 | 대면적 기판 처리 시스템의 가스 공급 장치 |
-
2010
- 2010-01-25 TW TW99101932A patent/TW201036090A/zh unknown
- 2010-01-29 CN CN2010800061503A patent/CN102301461A/zh active Pending
- 2010-01-29 WO PCT/KR2010/000540 patent/WO2010087638A2/ko active Application Filing
- 2010-01-29 JP JP2011547797A patent/JP5602157B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2010087638A3 (ko) | 2010-10-28 |
WO2010087638A2 (ko) | 2010-08-05 |
TW201036090A (en) | 2010-10-01 |
JP2012516564A (ja) | 2012-07-19 |
CN102301461A (zh) | 2011-12-28 |
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