JP5596853B2 - Deposition equipment - Google Patents

Deposition equipment Download PDF

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JP5596853B2
JP5596853B2 JP2013509734A JP2013509734A JP5596853B2 JP 5596853 B2 JP5596853 B2 JP 5596853B2 JP 2013509734 A JP2013509734 A JP 2013509734A JP 2013509734 A JP2013509734 A JP 2013509734A JP 5596853 B2 JP5596853 B2 JP 5596853B2
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space
chamber
film forming
substrate
tray
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JPWO2012140799A1 (en
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善勝 佐藤
哲宏 大野
弘樹 大空
重光 佐藤
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Ulvac Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063Transporting devices for sheet glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/02Controlled or contamination-free environments or clean space conditions

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Description

本発明は、インライン式の成膜装置に関し、特に、基板の搬送システムを改良し、省スペース化を図るとともに、生産効率を向上させた成膜装置に関する。
本願は、2011年4月11日に、日本に出願された特願2011−087583号に基づき優先権を主張し、その内容をここに援用する。
The present invention relates to an in-line type film forming apparatus, and more particularly to a film forming apparatus that improves a substrate transfer system, saves space, and improves production efficiency.
This application claims priority on April 11, 2011 based on Japanese Patent Application No. 2011-087583 for which it applied to Japan, and uses the content here.

例えば、プラズマディスプレイや液晶ディスプレイに用いられる大型ガラス基板を加工するには、真空下において、所望の温度まで昇温させる加熱工程や、スパッタリング、CVD、或いは、エッチング等の加工手段で、複数層成膜する種々の成膜工程が必要である。   For example, in order to process a large glass substrate used in a plasma display or a liquid crystal display, multiple layers are formed by a heating process for raising the temperature to a desired temperature under vacuum, or by a processing means such as sputtering, CVD, or etching. Various film forming steps for film formation are necessary.

従来より、種々の成膜装置が実用に供されている。基板を水平状態で成膜する成膜装置では、基板が大型化すると、それに伴って装置も大型化するという問題を備えている。そのため、近年では、基板を略直立させて成膜等を行う縦型方式の成膜装置が開発されている。   Conventionally, various film forming apparatuses have been put into practical use. A film forming apparatus for forming a substrate in a horizontal state has a problem that when the substrate is enlarged, the apparatus is also enlarged. For this reason, in recent years, vertical type film forming apparatuses have been developed that perform film formation or the like with the substrate substantially upright.

図5は、従来の成膜装置の基本構成を示す図である。
従来の成膜装置100は、基板着脱室120、1線路(ライン)上に連結された第一乃至第3の3つの真空処理室(加熱室や成膜室を指す)200、220、240、基板トレーを大気側と真空処理室200、220、240間で搬送するL/UL(Load/Unload:仕込/取出)室140と、を備える。
FIG. 5 is a diagram showing a basic configuration of a conventional film forming apparatus.
A conventional film forming apparatus 100 includes a substrate attaching / detaching chamber 120, first to third three vacuum processing chambers (referred to as a heating chamber and a film forming chamber) 200, 220, 240 connected on one line. And an L / UL (Load / Unload) chamber 140 that conveys the substrate tray between the atmosphere side and the vacuum processing chambers 200, 220, and 240.

また、L/UL室140内及び各真空処理室200、220、240内には、第一の搬送経路(往路)160と、第二の搬送経路180(復路)との2つの搬送経路160、180が設けられている。第一の搬送経路160は、基板トレーがL/UL室140から各真空処理室200、220、240に搬送される往路となる。第二の搬送経路180は、基板トレーが各真空処理室200、220、240から加熱室を経てL/UL室140に搬送される復路となる。   In addition, in the L / UL chamber 140 and each of the vacuum processing chambers 200, 220, and 240, two transfer paths 160, a first transfer path (outward path) 160 and a second transfer path 180 (return path), 180 is provided. The first transfer path 160 is a forward path through which the substrate tray is transferred from the L / UL chamber 140 to the vacuum processing chambers 200, 220, and 240. The second transfer path 180 is a return path in which the substrate tray is transferred from each of the vacuum processing chambers 200, 220, and 240 to the L / UL chamber 140 through the heating chamber.

更に、成膜装置100の最後部の第三の真空処理室240は、基板トレーを第一の搬送経路(往路)160から第二の搬送経路(復路)180に、2つの搬送経路160、180に対して横方向に移動させて移載する移載機構(図示せず)を備えている。この移載機構は、第一の搬送経路160上の基板トレーを一旦持ち上げ、第二の搬送経路180に移載する機構を有している。   Further, the third vacuum processing chamber 240 at the rearmost part of the film forming apparatus 100 is configured to transfer the substrate tray from the first transfer path (forward path) 160 to the second transfer path (return path) 180, and the two transfer paths 160 and 180. Is provided with a transfer mechanism (not shown) that moves in the horizontal direction. This transfer mechanism has a mechanism for once lifting the substrate tray on the first transfer path 160 and transferring it to the second transfer path 180.

なお、L/UL室140には、真空排気装置300が取り付けられている。加熱室には、加熱装置及び真空排気装置300が取り付けられている。各真空処理室200、220、240には、スパッタリング装置等の成膜ユニット210、230、250及び真空排気装置300がそれぞれ取り付けられている。   Note that an evacuation apparatus 300 is attached to the L / UL chamber 140. A heating device and a vacuum exhaust device 300 are attached to the heating chamber. In each of the vacuum processing chambers 200, 220, and 240, film forming units 210, 230, and 250 such as a sputtering device and a vacuum exhaust device 300 are attached, respectively.

このような従来の成膜装置100の基本動作について説明する。
基板着脱室120で、基板トレーに基板を載置されると、この基板トレーは、L/UL室140に搬送され、このL/UL室140が真空排気され、高真空化された後に、真空処理室200内に用意されている、往路となる第一の搬送経路160に搬送される。
基板トレー(基板キャリア)は、第一の搬送経路160を搬送されながら、真空処理室200、220、240において、載置された基板が加熱や成膜等の真空処理が施される。
The basic operation of such a conventional film forming apparatus 100 will be described.
When a substrate is placed on the substrate tray in the substrate attaching / detaching chamber 120, the substrate tray is transported to the L / UL chamber 140, and the L / UL chamber 140 is evacuated and evacuated to a vacuum. It is transported to the first transport path 160 that is prepared in the processing chamber 200 and serves as the forward path.
The substrate tray (substrate carrier) is subjected to vacuum processing such as heating and film formation in the vacuum processing chambers 200, 220, and 240 while being transported through the first transport path 160.

真空処理室240で基板が真空処理された後、基板トレーは復路となる第二の搬送経路180に、図示しない移載機構により移載され、真空処理室200、220、240において、それぞれ成膜等の真空処理がなされる。基板トレーは、真空処理された基板を載置した状態で、L/UL室140を経て、基板着脱室120で基板が取り外される。   After the substrate is vacuum processed in the vacuum processing chamber 240, the substrate tray is transferred to the second transfer path 180 serving as a return path by a transfer mechanism (not shown), and film formation is performed in the vacuum processing chambers 200, 220, and 240, respectively. Etc. are vacuum-processed. The substrate is removed from the substrate tray in the substrate attaching / detaching chamber 120 through the L / UL chamber 140 with the vacuum-treated substrate placed thereon.

ところで、一般に、L/UL室では、基板キャリアの搬送の他に、真空排気と大気圧開放が行われる。従って、真空処理装置のタクトは、このL/UL室の排気、ベント時間により影響を受ける。   Incidentally, in general, in the L / UL chamber, in addition to transporting the substrate carrier, vacuum exhaust and atmospheric pressure release are performed. Therefore, the tact of the vacuum processing apparatus is affected by the exhaust / vent time of the L / UL chamber.

しかし、従来の成膜装置では、L/UL室の基板入れ替え口には、基板トレーが単数しか配置されていなかった。従って、基板着脱部において、基板トレーが未処理基板の載置或いは処理基板の取り外しを行っている間、L/UL室では基板の仕込みや取出が行えない滞留時間が長くなり、タクトに悪影響が生じて、基板の真空処理効率が低下する問題を備えている。   However, in the conventional film forming apparatus, only a single substrate tray is disposed at the substrate replacement port in the L / UL chamber. Therefore, in the substrate attaching / detaching section, while the substrate tray is placing an unprocessed substrate or removing a processed substrate, the residence time during which the substrate cannot be loaded or removed in the L / UL chamber is increased, which adversely affects tact. This has a problem that the vacuum processing efficiency of the substrate is lowered.

また、インライン式の成膜装置では、基板を保持した基板トレーは連設された真空室内を一列で搬送されている。従って、従来例の装置によって生産量すなわち真空処理量を増大させるには、基板トレーの搬送速度を高めるか、または装置を増設することを要する。しかし、通常、基板トレーは可能な範囲の高速度で搬送されているので、搬送速度を更に高めることは困難である。従って、残る手段は装置の増設であるが、装置の増設は比例的に装置コストを増大させるほか、装置の占有面積もそれに応じて増大するという問題があった。   In the in-line type film forming apparatus, the substrate tray holding the substrate is transported in a row in a continuous vacuum chamber. Therefore, in order to increase the production amount, that is, the vacuum processing amount by the apparatus of the conventional example, it is necessary to increase the conveyance speed of the substrate tray or to add an apparatus. However, since the substrate tray is usually transported at a high speed as possible, it is difficult to further increase the transport speed. Therefore, although the remaining means is the expansion of the apparatus, the expansion of the apparatus has a problem that the apparatus cost is proportionally increased and the occupied area of the apparatus is increased accordingly.

日本国特開2005−340425号公報Japanese Unexamined Patent Publication No. 2005-340425

本発明は、このような従来の実情に鑑みてなされたものであり、省スペース化を図るとともに、基板の搬送システムを改良し、生産性を向上させた成膜装置を提供することを目的とする。   The present invention has been made in view of such a conventional situation, and aims to provide a film forming apparatus that saves space, improves a substrate transfer system, and improves productivity. To do.

本発明の第1態様に係る成膜装置は、L/UL室と、前記L/UL室に連通するH室と、前記H室に連通し、且つ独立した第一空間と第二空間とに区分されたSP室と、前記第一空間及び前記第二空間にそれぞれ配置された成膜ユニットと、前記L/UL室、前記H室、前記第一空間、および前記第二空間に独立して設けられて、それらの内部をそれぞれ真空排気するための真空排気装置と、前記L/UL室および前記H室を貫通し、前記第一空間および前記第二空間に配置された各々往路と復路からなる4本の線路と、被処理体を、前記往路に沿って前記L/UL室から前記H室を通して、前記第一空間および前記第二空間の内部にそれぞれ運び、及び、前記復路に沿って前記第一空間および前記第二空間の内部から、前記H室を通して前記L/UL室へ前記被処理体を運ぶ搬送装置と、前記第一空間および前記第二空間の内部において、前記搬送装置を前記往路から前記復路に移す移動機構と、を備えてなる成膜装置であって、
前記L/UL室は、2つのドアバルブを介してRT機構も接続されており、前記RT機構は、第1RT機構と、第2RT機構と、第3RT機構とを備え、前記第3RT機構と前記第1RT機構との間では、前記第一空間に搬送する被処理体を処理し、前記第3RT機構と前記第2RT機構との間では、前記第二空間に搬送する被処理体を処理しても良い。
発明の第態様に係る成膜装置は、前記第1態様において、前記搬送装置は、前記被処理体を縦型搬送しても良い。
本発明の第態様に係る成膜装置は、前記第1又は様において、前記成膜ユニットが、スパッタ用のカソードであっても良い。
本発明の第態様に係る成膜装置は、前記第1又は様において、前記成膜ユニットが、CVD用の平行平板型の電極であっても良い。
本発明の第態様に係る成膜装置は、前記第1乃至第態様のいずれかにおいて、前記搬送装置は、その下部に円柱形のスライドシャフトを備え、前記線路は、前記搬送装置を誘導するU字状の溝を備えた、複数のローラであり、前記スライドシャフト又は前記ローラの一方の少なくとも接触部が、シリコン、アルミニウム、酸素、および窒素を含むバルク体から構成され、前記スライドシャフト又は前記ローラの他方の少なくとも接触部が、ステンレス綱から構成されても良い。


The film forming apparatus according to the first aspect of the present invention includes an L / UL chamber, an H chamber communicating with the L / UL chamber, an independent first space and a second space communicating with the H chamber. Independently of the partitioned SP chamber, the film forming units respectively disposed in the first space and the second space, the L / UL chamber, the H chamber, the first space, and the second space An evacuation device for evacuating the interior of each of them, through the L / UL chamber and the H chamber, and from the forward path and the return path disposed in the first space and the second space, respectively. The four lines and the object to be processed are carried along the forward path from the L / UL chamber through the H chamber to the inside of the first space and the second space, respectively, and along the return path. From the inside of the first space and the second space, through the H chamber A transfer device to L / UL chamber carrying the object to be processed, the inside of the first space and the second space, wherein a moving mechanism for the conveying apparatus from said forward transfer to return the film forming device including a Because
The L / UL chamber is also connected to an RT mechanism through two door valves, and the RT mechanism includes a first RT mechanism, a second RT mechanism, and a third RT mechanism, and the third RT mechanism and the third RT mechanism. The object to be processed conveyed to the first space is processed between the 1RT mechanism and the object to be processed conveyed to the second space is processed between the third RT mechanism and the second RT mechanism. good.
Film forming apparatus according to the second aspect of the present invention, in the first state-like, the conveying device, the may carry vertical the object to be processed.
Film forming apparatus according to the third aspect of the present invention, Oite to the first or second state like, the film forming unit may be a cathode for sputtering.
Film deposition apparatus according to a fourth aspect of the present invention, Oite to the first or second state like, the film-forming unit may be an electrode of the parallel plate for CVD.
The film forming apparatus according to a fifth aspect of the present invention is the film forming apparatus according to any one of the first to fourth aspects, wherein the transfer device includes a cylindrical slide shaft at a lower portion thereof, and the line guides the transfer device. A plurality of rollers having a U-shaped groove, wherein at least a contact portion of one of the slide shaft or the roller is made of a bulk body containing silicon, aluminum, oxygen, and nitrogen, and the slide shaft or At least the other contact portion of the roller may be made of stainless steel.


本発明一態様によれば、省スペース化を図るとともに、基板の搬送システムを改良し、生産性を向上させた成膜装置を提供することが可能である。   According to one embodiment of the present invention, it is possible to provide a film forming apparatus that saves space, improves a substrate transfer system, and improves productivity.

本発明の成膜装置の一構成例を模式的に示す断面図である。It is sectional drawing which shows typically the example of 1 structure of the film-forming apparatus of this invention. 基板が搭載されるトレーの一例を示す斜視図である。It is a perspective view which shows an example of the tray in which a board | substrate is mounted. トレーの下部支持機構の一例を示す斜視図である。It is a perspective view which shows an example of the lower support mechanism of a tray. トレーの上部支持機構の一例を示す断面図である。It is sectional drawing which shows an example of the upper part support mechanism of a tray. 従来の成膜装置の一構成例を模式的に示す断面図である。It is sectional drawing which shows typically the example of 1 structure of the conventional film-forming apparatus.

以下、本発明の実施形態に係る成膜装置について説明する。   Hereinafter, a film forming apparatus according to an embodiment of the present invention will be described.

図1は、本発明の成膜装置の一構成例を模式的に示す断面図であり、成膜装置を上方から見た図である。図1において、紙面奥行き方向が重力方向である。図1に示す成膜装置においては、基板(被処理体)を装着したトレーが、立てた状態(基板の被処理面が重力方向に平行とされた状態)で搬送される。ゆえに、図1の成膜装置1は、縦型搬送方式の装置である。   FIG. 1 is a cross-sectional view schematically showing one configuration example of the film forming apparatus of the present invention, and is a view of the film forming apparatus as viewed from above. In FIG. 1, the depth direction of the paper surface is the direction of gravity. In the film forming apparatus shown in FIG. 1, a tray on which a substrate (object to be processed) is mounted is conveyed in a standing state (a state where a surface to be processed of the substrate is parallel to the direction of gravity). Therefore, the film forming apparatus 1 shown in FIG. 1 is a vertical transfer type apparatus.

図1に示すように、本発明の実施形態に係る成膜装置1は、L/UL室(Load/Unload:仕込/取出室)10、H室(加熱室)20、SP室(スパッタ法を用いた成膜室)30が順に配されてなる。また、L/UL室10の手前には、POS機構(トレーに装着/トレーから脱着する基板(被処理体)の着脱室)40と、RT機構(回転モードを備えたトレーの移動機構)50と、が配されている。   As shown in FIG. 1, a film forming apparatus 1 according to an embodiment of the present invention includes an L / UL chamber (Load / Unload) 10, an H chamber (heating chamber) 20, an SP chamber (a sputtering method). (Deposition chamber used) 30 are arranged in order. Further, in front of the L / UL chamber 10, a POS mechanism (attachment / detachment chamber for a substrate (object to be processed) to be attached to / detached from the tray) 40 and an RT mechanism (tray moving mechanism having a rotation mode) 50 are provided. And are arranged.

各室間は、並列して配された2つのドアバルブを介して連通されている。RT機構50とL/UL室10との間には2つのドアバルブ61が設けられている。同様に、L/UL室10と加熱室20との間には、2つのドアバルブ62が設けられている。加熱室20と成膜室30との間には、2つのドアバルブ63が設けられている。   The chambers communicate with each other through two door valves arranged in parallel. Two door valves 61 are provided between the RT mechanism 50 and the L / UL chamber 10. Similarly, two door valves 62 are provided between the L / UL chamber 10 and the heating chamber 20. Two door valves 63 are provided between the heating chamber 20 and the film forming chamber 30.

成膜室30は、独立した第一空間30Aと第二空間30Bに区分される。それとともに、L/UL室10、加熱室20、及び成膜室30の前記第一空間30Aおよび第二空間30Bの内部をそれぞれ真空排気するための真空排気装置12,22,32(32A、32B)が、それぞれ独立して設けられている。すなわち、成膜室30を構成する独立した第一空間30Aと第二空間30Bには、それぞれの空間内を専属に排気可能な真空排気装置32A、32Bが、個別に設置されている。   The film forming chamber 30 is divided into an independent first space 30A and a second space 30B. At the same time, the evacuation devices 12, 22, 32 (32A, 32B) for evacuating the interior of the first space 30A and the second space 30B of the L / UL chamber 10, the heating chamber 20, and the film formation chamber 30, respectively. ) Are provided independently. In other words, in the independent first space 30A and second space 30B constituting the film forming chamber 30, vacuum evacuation devices 32A and 32B capable of exclusively exhausting the respective spaces are individually installed.

L/UL室10は、大気圧に開放された状態で、RT機構50との間でトレー70の仕込み(搬入)と取り出し(搬出)を行う。L/UL室10には、その内部を真空排気するための真空排気装置12が設けられている。L/UL室10は、その中央部に隔壁11が配されている。これにより、L/UL室10の室内が、第一空間10Aと第二空間10Bに区分されている。第一空間10Aは、成膜室30の第一空間30Aに搬送する基板(被処理体)2を取り扱う。第二空間10Bは、成膜室30の第二空間30Bに搬送する基板(被処理体)2を取り扱う。   The L / UL chamber 10 charges (loads in) and takes out (unloads) the tray 70 with the RT mechanism 50 in a state opened to atmospheric pressure. The L / UL chamber 10 is provided with an evacuation device 12 for evacuating the interior thereof. The L / UL chamber 10 is provided with a partition wall 11 at the center thereof. Thereby, the interior of the L / UL chamber 10 is divided into a first space 10A and a second space 10B. The first space 10 </ b> A handles the substrate (object to be processed) 2 transported to the first space 30 </ b> A of the film forming chamber 30. The second space 10 </ b> B handles the substrate (object to be processed) 2 transported to the second space 30 </ b> B of the film forming chamber 30.

図1は、第一空間10Aと第二空間10Bとが隔壁11によって完全に仕切られ、互いに独立した空間とはなっておらず、互いに一部連通した構成例を示している。しかしながら、図には示されていないが、第一空間10Aと第二空間10Bとは、必ずしも互いに連通した空間である必要はなく、第一空間10Aと第二空間10Bとが互いに独立した空間をなすように、隔壁11を設けてもよい。第一空間10Aと第二空間10Bとが連通した構成の場合には、真空排気装置が最低1つあればよいので、低コストなシステムが構築できる。
上述した構成に代えて、第一空間10Aと第二空間10Bを独立した空間とした構成の場合は、第一空間10Aと第二空間10Bに個別に真空排気装置を設けてもよい。しかしながら、第一空間10Aと第二空間10Bの各排気時間帯を処理タクト時間に応じて切り替える機構を持たせることにより、真空排気装置を1つとすることも可能である。さらに、真空処理とメンテナンス等の作業を別個に行うことができるメリットがあるので、互いに独立した空間とする構成であってもよい。
FIG. 1 shows a configuration example in which the first space 10A and the second space 10B are completely partitioned by the partition wall 11 and are not mutually independent spaces, but are partially in communication with each other. However, although not shown in the drawing, the first space 10A and the second space 10B do not necessarily have to be in communication with each other, and the first space 10A and the second space 10B are independent from each other. As may be made, the partition wall 11 may be provided. In the case of the configuration in which the first space 10A and the second space 10B are communicated with each other, it is sufficient to have at least one vacuum exhaust device, so that a low cost system can be constructed.
In the case of a configuration in which the first space 10A and the second space 10B are independent spaces, instead of the configuration described above, a vacuum exhaust device may be separately provided in the first space 10A and the second space 10B. However, by providing a mechanism for switching the exhaust time zones of the first space 10A and the second space 10B according to the processing tact time, it is possible to use one vacuum exhaust device. Furthermore, since there is a merit that work such as vacuum processing and maintenance can be performed separately, a configuration in which the spaces are independent from each other may be employed.

L/UL室10は2つのドアバルブ61を介して、前記L/UL室10の手前(前段)に配されたRT機構50及びPOS機構40に接続されている。
ドアバルブ61の一方は、第一POS機構40A及び第一RT機構51Aを経由する、トレー70A(70)をL/UL室10へ搬入出させる場合に用いる。ドアバルブ61の他方は、第二POS機構40B及び第二RT機構51Bを経由する、トレー70B(70)をL/UL室10へ搬入出させる場合に用いる。
The L / UL chamber 10 is connected via two door valves 61 to an RT mechanism 50 and a POS mechanism 40 arranged in front of the L / UL chamber 10 (front stage).
One of the door valves 61 is used when the tray 70A (70) passing through the first POS mechanism 40A and the first RT mechanism 51A is carried into and out of the L / UL chamber 10. The other of the door valves 61 is used when the tray 70B (70) is carried into and out of the L / UL chamber 10 via the second POS mechanism 40B and the second RT mechanism 51B.

POS機構40は、第一POS機構40Aと、第二POS機構40Bとから構成され、外部から運ばれてきた基板(被処理体)2をトレー70に取付けるとともに、処理済みの基板2を、トレー70から取り外し外部へと運び出す。
前記RT機構50は、第一RT機構51A、第二RT機構51B、第三RT機構51Cから構成され、POS機構40においてトレー70に取付けられた基板2を、L/UL室10に搬送するとともに、L/UL室10でアンロードされた処理済みのトレー70を、POS機構40へと搬送する。
The POS mechanism 40 includes a first POS mechanism 40A and a second POS mechanism 40B. The POS mechanism 40 attaches the substrate (object to be processed) 2 carried from the outside to the tray 70, and attaches the processed substrate 2 to the tray 70. Remove from 70 and carry outside.
The RT mechanism 50 includes a first RT mechanism 51A, a second RT mechanism 51B, and a third RT mechanism 51C, and transports the substrate 2 attached to the tray 70 in the POS mechanism 40 to the L / UL chamber 10. The processed tray 70 unloaded in the L / UL chamber 10 is conveyed to the POS mechanism 40.

第一POS機構40A、及び第一RT機構51Aでは、L/UL室10の第一空間10Aに搬送する基板2を取り扱う。第二POS機構40B、及び第二RT機構51Bでは、L/UL室10の第二空間10Bに搬送する基板2を取り扱う。   In the first POS mechanism 40A and the first RT mechanism 51A, the substrate 2 transported to the first space 10A of the L / UL chamber 10 is handled. In the second POS mechanism 40B and the second RT mechanism 51B, the substrate 2 transported to the second space 10B of the L / UL chamber 10 is handled.

L/UL室10では、RT機構50からトレー70が搬送される際は大気圧に開放されているが、搬送後はドアバルブ61が閉じられ、真空排気装置12により排気され、高真空状態となってから、加熱室20との間に配されたドアバルブ62を開き、トレー70を搬送する。加熱室20へトレー70を搬送した後は、隣の加熱室20とのドアバルブ62が閉じられ、再度大気圧に戻され、次のトレー70の搬送が行われる。この際、L/UL室10は、加熱室20とのドアバルブ62が閉じられた後に、大気圧に開放される。ゆえに、加熱室20の内部空間は常に、高真空状態が保たれる。   In the L / UL chamber 10, when the tray 70 is transported from the RT mechanism 50, it is opened to the atmospheric pressure. However, after the transport, the door valve 61 is closed and the vacuum exhaust device 12 exhausts the air to enter a high vacuum state. Then, the door valve 62 arranged between the heating chamber 20 is opened and the tray 70 is conveyed. After the tray 70 is transported to the heating chamber 20, the door valve 62 with the adjacent heating chamber 20 is closed, the pressure is returned to the atmospheric pressure again, and the next tray 70 is transported. At this time, the L / UL chamber 10 is opened to atmospheric pressure after the door valve 62 with the heating chamber 20 is closed. Therefore, the internal space of the heating chamber 20 is always kept in a high vacuum state.

加熱室(H室)20には加熱装置23が設けられており、基板2を成膜に適した温度まで昇温する。加熱室20には、その内部を真空排気するための真空排気装置22が設けられている。加熱室20も同様に、その中央部にはリフレクター(反射板の)機能を備えた隔壁21が配されており、加熱室内が、第一空間20Aと第二空間20Bに区分されている。第一空間20Aは、成膜室30の第一空間30Aに搬送する基板(被処理体)2を取り扱い、第二空間20Bは、成膜室30の第二空間30Bに搬送する基板(被処理体)2を取り扱う。   A heating device 23 is provided in the heating chamber (H chamber) 20 to raise the temperature of the substrate 2 to a temperature suitable for film formation. The heating chamber 20 is provided with an evacuation device 22 for evacuating the inside thereof. Similarly, the heating chamber 20 is provided with a partition wall 21 having a reflector (reflector) function at the center thereof, and the heating chamber is divided into a first space 20A and a second space 20B. The first space 20A handles the substrate (object to be processed) 2 transferred to the first space 30A of the film forming chamber 30, and the second space 20B is the substrate (processed) transferred to the second space 30B of the film forming chamber 30. Body) 2 is handled.

図1においては、第一空間20Aと第二空間20Bとが隔壁21によって完全に仕切られ、互いに独立した空間とはなっておらず、(図には示さないが、隔壁21の上部や下部において)互いに一部連通した構成例を示している。しかしながら、図には示さないが、第一空間20Aと第二空間20Bとは、必ずしも互いに連通した空間である必要はなく、第一空間20Aと第二空間20Bとが互いに独立した空間をなすように、隔壁21を設けてもよい。第一空間20Aと第二空間20Bとが連通した構成の場合には、真空排気装置が最低1つあればよいので、低コストなシステムが構築できる。これに対して、独立した空間とした構成の場合には、各々の空間をそれぞれ真空排気する真空排気装置が個別に最低1つ必要となるが、真空処理とメンテナンス等の作業を別個に行うことができるメリットがあるので、互いに独立した空間とする構成であってもよい。   In FIG. 1, the first space 20 </ b> A and the second space 20 </ b> B are completely partitioned by the partition wall 21 and are not independent from each other (not shown in the drawing, ) A configuration example is shown in which some of the components communicate with each other. However, although not shown in the drawing, the first space 20A and the second space 20B do not necessarily have to be in communication with each other, and the first space 20A and the second space 20B are independent of each other. In addition, a partition wall 21 may be provided. In the case of the configuration in which the first space 20A and the second space 20B are communicated with each other, it is only necessary to have at least one vacuum exhaust device, so that a low-cost system can be constructed. On the other hand, in the case of an independent space configuration, at least one vacuum evacuation device for evacuating each space is required individually, but operations such as vacuum processing and maintenance should be performed separately. Since there is a merit that can be achieved, a configuration in which the spaces are independent from each other may be employed.

成膜室(SP室)30は2つのドアバルブ63を介して、加熱室(H室)20に接続されている。
ドアバルブ63の一方は、加熱室(H室)20にて熱処理された基板(被処理体)2が搭載されたトレー70A(70)を成膜室30の第一空間30Aへ搬入したり、あるいは、成膜室30の第一空間30Aから成膜後のトレー70A(70)を加熱室(H室)20へ搬出する場合に用いる。同様に、ドアバルブ63の他方は、加熱室(H室)20にて熱処理された基板(被処理体)2が搭載されたトレー70B(70)を成膜室30の第二空間30Bへ搬入したり、あるいは、成膜室30の第二空間30Bから成膜後のトレー70B(70)を加熱室(H室)20へ搬出する場合に用いる。
The film forming chamber (SP chamber) 30 is connected to the heating chamber (H chamber) 20 via two door valves 63.
One of the door valves 63 carries the tray 70A (70) on which the substrate (object to be processed) 2 heat-treated in the heating chamber (H chamber) 20 is loaded into the first space 30A of the film forming chamber 30, or This is used when the tray 70A (70) after film formation is carried out from the first space 30A of the film formation chamber 30 to the heating chamber (H chamber) 20. Similarly, the other of the door valves 63 carries the tray 70B (70) on which the substrate (object to be processed) 2 heat-treated in the heating chamber (H chamber) 20 is loaded into the second space 30B of the film forming chamber 30. Or, it is used when the tray 70B (70) after film formation is carried out from the second space 30B of the film formation chamber 30 to the heating chamber (H chamber) 20.

成膜室(SP室)30では、成膜ユニット33により、基板2が成膜処理される。
特に、本発明の実施形態に係る成膜装置1では、成膜室30は、独立した第一空間30Aと第二空間30Bに区分され、それぞれの内部を真空排気するために、真空排気装置32および成膜ユニット33が、各空間ごとに配置されている。すなわち、真空排気装置32Aと成膜ユニット33Aは第一空間30A用であり、真空排気装置32Bと成膜ユニット33Bは第二空間30B用である。
In the film forming chamber (SP chamber) 30, the substrate 2 is subjected to film forming processing by the film forming unit 33.
In particular, in the film forming apparatus 1 according to the embodiment of the present invention, the film forming chamber 30 is divided into the independent first space 30A and the second space 30B, and the vacuum exhaust device 32 is used to evacuate the interior of each. And the film-forming unit 33 is arrange | positioned for every space. That is, the vacuum exhaust device 32A and the film forming unit 33A are for the first space 30A, and the vacuum exhaust device 32B and the film forming unit 33B are for the second space 30B.

本発明の実施形態に係る成膜装置は、独立した第一空間30Aと第二空間30Bにおいて、それぞれ成膜処理を行うことができる。ゆえに、2枚の基板(被処理体)に対して同時に(並行して)成膜処理を行うことが可能であり、生産性の向上が図れる。また、成膜室30を独立した2つの空間に区分しているので、装置を増設する必要がなく装置の低コスト化、省スペース化を図ることもできる。さらに、第一空間30Aと第二空間30Bとが互いに独立した空間とされているので、一方は真空処理(例えば、成膜処理)を行いつつ、他方はメンテナンス処理(例えば、ターゲット交換)の作業を行うことが、同時に可能となる。よって、本発明の実施形態に係る成膜装置は、その運用において高い自由度があり、フレキシブルな稼働状況を実現できる。
成膜ユニット33としては、特に限定されるものではないが、例えば、スパッタ用のターゲットを備えたカソードや、CVD用の平行平板型の電極が挙げられる。
The film forming apparatus according to the embodiment of the present invention can perform the film forming process in each of the independent first space 30A and second space 30B. Therefore, film formation can be performed simultaneously (in parallel) on two substrates (objects to be processed), and productivity can be improved. In addition, since the film forming chamber 30 is divided into two independent spaces, it is not necessary to add an apparatus, and the apparatus can be reduced in cost and space. Further, since the first space 30A and the second space 30B are independent from each other, one is performing vacuum processing (for example, film formation processing) while the other is performing maintenance processing (for example, target replacement). Can be performed simultaneously. Therefore, the film forming apparatus according to the embodiment of the present invention has a high degree of freedom in its operation and can realize a flexible operation state.
The film forming unit 33 is not particularly limited, and examples thereof include a cathode provided with a sputtering target and a parallel plate type electrode for CVD.

このような成膜装置1において、被処理体である基板2は、搬送装置に搭載されて搬送されながら、加熱や成膜などの処理が施される。
基板2を搬送する搬送装置は、基板2を保持するトレー70(キャリア)と、基板2が保持されたトレー70を搬送する線路80とを備える。また、搬送装置は、基板2を縦型搬送する。
In such a film forming apparatus 1, the substrate 2, which is an object to be processed, is subjected to processing such as heating and film formation while being mounted on the transfer apparatus and being transferred.
The transport apparatus that transports the substrate 2 includes a tray 70 (carrier) that holds the substrate 2 and a line 80 that transports the tray 70 on which the substrate 2 is held. In addition, the transport device transports the substrate 2 vertically.

ここで、基板2を縦置き(縦型搬送)とする理由は、主として、大型の液晶ディスプレイやプラズマディスプレイが普及するに伴い、基板自体が大型化、薄型化したことによる。基板を横置きとした場合は、成膜装置自体の設置面積がそれに伴って大型化するので、縦型とすることで省スペース化を図る趣旨である。また、横置きの場合は、基板2の自重による撓みが生じ平坦性を保持することが難しく、均一な成膜が困難となるためである。
さらに、支持台上に基板を横置きして、スパッタダウンにて成膜する方法もあるが、この場合には、成膜面に異物が付着し、膜中に混入する等して、膜特性やデバイス特性を低下する虞があるため、採用は控える方がよいためである。
Here, the reason why the substrate 2 is placed vertically (vertical conveyance) is mainly that the substrate itself has become larger and thinner with the widespread use of large liquid crystal displays and plasma displays. When the substrate is placed horizontally, the installation area of the film forming apparatus itself increases accordingly, so that the vertical type is intended to save space. Further, in the case of horizontal placement, the substrate 2 is bent due to its own weight, and it is difficult to maintain flatness, and uniform film formation becomes difficult.
In addition, there is a method in which the substrate is placed horizontally on the support base and the film is formed by sputtering down. In this case, the film characteristics such as foreign matter adhering to the film formation surface and mixed in the film are also present. This is because it is better to refrain from adopting it because there is a risk of deteriorating the device characteristics.

本発明の実施形態に係る成膜装置1では、前記成膜室30において、前記第一空間30Aおよび前記第二空間30Bには、各々往路と復路からなる線路80が4本(往路の線路と復路の線路を1組とした場合は2組)あり、この4本の線路80は全て、前記L/UL室10および前記加熱室20を貫通するように配置されている。
本発明の実施形態に係る成膜装置1において、成膜室30の第一空間30Aおよび第二空間30Bには、トレー70がL/UL室10から加熱室20を経て前記第一空間30Aおよび前記第二空間30Bに搬送される往路となる第一線路81A、81Bと、成膜室30の第一空間30Aおよび第二空間30Bから加熱室20を経てL/UL室10に搬送される復路となる第二線路82A、82Bがそれぞれ設けられている。これら第一線路81A、81B及び第二線路82A、82Bは全て、前記L/UL室10および前記加熱室20を貫通して配置されている。
In the film forming apparatus 1 according to the embodiment of the present invention, in the film forming chamber 30, the first space 30A and the second space 30B each include four lines 80 each composed of an outward path and a return path (outward path lines and There are two sets when the number of return lines is one set), and all of these four lines 80 are arranged to penetrate the L / UL chamber 10 and the heating chamber 20.
In the film forming apparatus 1 according to the embodiment of the present invention, a tray 70 is provided in the first space 30A and the second space 30B of the film forming chamber 30 from the L / UL chamber 10 through the heating chamber 20 and the first space 30A and the second space 30B. The first lines 81A and 81B serving as the forward paths transported to the second space 30B, and the return paths transported from the first space 30A and the second space 30B of the film forming chamber 30 to the L / UL chamber 10 through the heating chamber 20. Second lines 82A and 82B are provided. The first lines 81A and 81B and the second lines 82A and 82B are all disposed through the L / UL chamber 10 and the heating chamber 20.

また、成膜装置1は、トレー70を第一線路81A、81B(往路)から第二線路82A、82B(復路)に、線路に対して横方向に移動させて移載する移動機構(図示せず)を備えている。この移動機構は、第一線路81A、81B上のトレー70を一旦持ち上げ、第二線路82A、82Bに移載する機構を有している。   Further, the film forming apparatus 1 moves the tray 70 from the first lines 81A and 81B (outward path) to the second lines 82A and 82B (return path) in the lateral direction with respect to the lines (not shown). )). This moving mechanism has a mechanism that once lifts the tray 70 on the first lines 81A and 81B and transfers it to the second lines 82A and 82B.

図2は、トレー70の概略構成を示す斜視図である。
図2に示すように、トレー70は、アルミニウムなどからなる枠状のフレーム71と、フレーム71の上辺に沿うように設けられたマグネット72と、フレーム71の下辺に沿うように設けられた円柱状のスライダシャフト73と、基板2の荷重を受け、かつ基板2の水平度を保持するための基板受け74と、基板2をトレー70に保持させるためのクランプ75と、基板2の周縁の非成膜領域を覆うためのマスク76とを備えている。
FIG. 2 is a perspective view showing a schematic configuration of the tray 70.
As shown in FIG. 2, the tray 70 has a frame-like frame 71 made of aluminum or the like, a magnet 72 provided along the upper side of the frame 71, and a columnar shape provided along the lower side of the frame 71. Slider shaft 73, a substrate receiver 74 for receiving the load of the substrate 2 and maintaining the level of the substrate 2; a clamp 75 for holding the substrate 2 on the tray 70; And a mask 76 for covering the film region.

線路80は、トレー70の荷重を支持しながらトレー70を搬送可能に構成された下部支持機構84と、トレー70の上部を非接触で支持可能に構成された上部支持機構88とを備えている。トレー70は、下部支持機構84および上部支持機構88により、略垂直に保持された状態で移動可能に構成されている。   The track 80 includes a lower support mechanism 84 configured to be able to transport the tray 70 while supporting the load of the tray 70, and an upper support mechanism 88 configured to be able to support the upper portion of the tray 70 in a non-contact manner. . The tray 70 is configured to be movable while being held substantially vertically by the lower support mechanism 84 and the upper support mechanism 88.

図3は、下部支持機構84の構成を示す斜視図である。
図3に示すように、下部支持機構84は、モータ85と、ローラ86とを備えている。
ローラ86は、トレー70を誘導するU字状の溝部86aを備えている。モータ85が駆動することで、ローラ86が回転し、ローラ86上をトレー70が水平移動するように構成されている。具体的には、トレー70の下部に設けられたスライダシャフト73がローラ86の溝部86aに係合し、トレー70が水平移動可能に構成されている。
FIG. 3 is a perspective view showing the configuration of the lower support mechanism 84.
As shown in FIG. 3, the lower support mechanism 84 includes a motor 85 and a roller 86.
The roller 86 includes a U-shaped groove 86 a that guides the tray 70. When the motor 85 is driven, the roller 86 rotates and the tray 70 moves horizontally on the roller 86. Specifically, the slider shaft 73 provided at the lower portion of the tray 70 is engaged with the groove portion 86a of the roller 86, so that the tray 70 can be moved horizontally.

また、図4は、上部支持機構88の構成を示す説明図である。
図4に示すように、上部支持機構88には複数のマグネット89が設けられている。そして、トレー70の上辺にもマグネット72が取り付けられており、マグネット89とマグネット72が垂直方向に対向するように、かつ互いのマグネット89,72が吸着しあうように配置される。
FIG. 4 is an explanatory diagram showing the configuration of the upper support mechanism 88.
As shown in FIG. 4, the upper support mechanism 88 is provided with a plurality of magnets 89. A magnet 72 is also attached to the upper side of the tray 70, and is arranged so that the magnet 89 and the magnet 72 face each other in the vertical direction and the magnets 89 and 72 are attracted to each other.

このように構成することで、マグネット89,72同士が吸着しあい、トレー70を垂直状態に保持することが可能となる。つまり、基板2を垂直保持することにより、基板2の大型化に伴う成膜装置1の設置面積の増大を抑えることができるとともに、大型基板2の撓みによる影響を回避することができる。   With this configuration, the magnets 89 and 72 are attracted to each other, and the tray 70 can be held in a vertical state. That is, by holding the substrate 2 vertically, it is possible to suppress an increase in the installation area of the film forming apparatus 1 accompanying an increase in the size of the substrate 2 and to avoid the influence of the bending of the large substrate 2.

特に、本実施形態の成膜装置1では、スライドシャフト73又は下部支持機構84のローラ86の一方の少なくとも接触部が、シリコン(Si)、アルミニウム(Al)、酸素(O)および窒素(N)を含むバルク体から構成され、スライドシャフト73又はローラ86の他方の少なくとも接触部が、SUS(ステンレス鋼)から構成されていることが好ましい。
スライドシャフト73又はローラ86の接触部を上記のような材料により構成することで、スライドシャフト73とローラ86の磨耗を抑えることができ、磨耗によるダストの発生を低減できるほか、装置の長寿命化を図ることができる。
In particular, in the film forming apparatus 1 of the present embodiment, at least the contact portion of one of the slide shaft 73 or the roller 86 of the lower support mechanism 84 has silicon (Si), aluminum (Al), oxygen (O), and nitrogen (N). It is preferable that at least the other contact portion of the slide shaft 73 or the roller 86 is made of SUS (stainless steel).
By configuring the contact portion of the slide shaft 73 or the roller 86 with the material as described above, wear of the slide shaft 73 and the roller 86 can be suppressed, dust generation due to wear can be reduced, and the life of the apparatus can be extended. Can be achieved.

本発明の実施形態に係る成膜装置1は、第一線路(往路)81A、81Bに沿って移動するトレー(搬送装置)70により基板(被処理体)2は、前記L/UL室10から前記加熱室20を通して、成膜室30の第一空間30Aおよび第二空間30Bの内部にそれぞれ運ばれ、成膜室30にて成膜する。その後、前記基板2を載置する搬送装置はそれぞれ、前記第一空間30Aおよび前記第二空間30Bの内部において、移動装置により第一線路(往路)81A、81Bから第二線路(復路)82A、82Bに移される。その後、第二線路82A、82Bに沿って前記第一空間30Aおよび前記第二空間30Bの内部から、前記加熱室20を通して前記L/UL室10へ運ばれる。   In the film forming apparatus 1 according to the embodiment of the present invention, the substrate (object to be processed) 2 is moved from the L / UL chamber 10 by a tray (conveyance device) 70 that moves along the first lines (outward paths) 81A and 81B. Through the heating chamber 20, the film is carried into the first space 30 </ b> A and the second space 30 </ b> B of the film forming chamber 30, and the film is formed in the film forming chamber 30. Thereafter, the transfer device for placing the substrate 2 is moved from the first line (forward path) 81A, 81B to the second line (return path) 82A by the moving device in the first space 30A and the second space 30B, respectively. Moved to 82B. After that, along the second tracks 82A and 82B, the first space 30A and the second space 30B are transported to the L / UL chamber 10 through the heating chamber 20 from the inside.

本発明の実施形態では、前記のように往路と復路とをそれぞれ設けることにより、基板の搬送効率を向上することができる。また、L/UL室10における基板の仕込みや取出を短時間で行うことができ、タクトを短縮することができる。これにより本発明の実施形態に係る成膜装置では、生産性を向上することができる。   In the embodiment of the present invention, the substrate transfer efficiency can be improved by providing the forward path and the return path as described above. Moreover, the board | substrate can be prepared and taken out in the L / UL chamber 10 in a short time, and a tact can be shortened. Thereby, productivity can be improved in the film forming apparatus according to the embodiment of the present invention.

次に、本発明の実施形態に係る成膜装置1を用いて、基板2に成膜する際の動作を図1に基づいて説明する。
なお、以下の説明では、成膜室30の第一空間30Aで成膜処理が施される基板2の移動について説明するが、第二空間30Bで成膜処理が施される基板2についても、第一空間30Aの場合と同様である。
まず、基板2が他所から水平状態で成膜装置1のPOS機構40の前まで搬送されてくる。その後、横倒し(寝かせた)の状態とされたトレー(不図示)に基板2を搭載した後、トレーを垂直状態になるように立ち上げる。POS機構40に示したトレー70(2)は、この立ち上げた状態のものである。このとき、基板2はトレー70の基板受け74に当接した状態とされており、基板2はクランプ75にてトレー70に保持される。(図2参照)。
Next, the operation when forming a film on the substrate 2 using the film forming apparatus 1 according to the embodiment of the present invention will be described with reference to FIG.
In the following description, the movement of the substrate 2 on which the film formation process is performed in the first space 30A of the film formation chamber 30 will be described, but the substrate 2 on which the film formation process is performed in the second space 30B is also described. This is the same as in the case of the first space 30A.
First, the substrate 2 is transported from other places to the front of the POS mechanism 40 of the film forming apparatus 1 in a horizontal state. Then, after mounting the board | substrate 2 on the tray (not shown) made into the state of lying down (laid down), a tray is stood | started up so that it may become a vertical state. The tray 70 (2) shown in the POS mechanism 40 is in the raised state. At this time, the substrate 2 is in contact with the substrate receiver 74 of the tray 70, and the substrate 2 is held on the tray 70 by the clamp 75. (See FIG. 2).

基板2が搭載されたトレー70は、RT機構50の第一RT機構51Aを介して第三RT機構51Cへと搬送する。第三RT機構51Cでは、トレー70をL/UL室10の第一空間10Aへと搬送可能な方向にする。   The tray 70 on which the substrate 2 is mounted is transported to the third RT mechanism 51C via the first RT mechanism 51A of the RT mechanism 50. In the third RT mechanism 51 </ b> C, the tray 70 is set in a direction in which the tray 70 can be conveyed to the first space 10 </ b> A of the L / UL chamber 10.

そして、L/UL室10のドアバルブ61を開状態にした後、トレー70を往路となる第一線路81Aに載置し、トレー70を第一線路81AにてL/UL室10の第一空間10Aへと搬送する。
また、後述するように、L/UL室10では、成膜処理された基板2を載置したトレー70が、第二線路82A(復路)にて搬送されて来るので、このトレー70をRT機構50へと搬送する。
トレー70がL/UL室10へ搬送されると、ドアバルブ61を閉状態にし、その後、真空排気装置12にて室内を排気し、L/UL室10を真空状態にする。L/UL室10内が真空状態になった後、隣の加熱室20とのドアバルブ62を開状態にして、トレー70を第一線路81Aにて加熱室20の第一空間20Aへと搬送する。
Then, after the door valve 61 of the L / UL chamber 10 is opened, the tray 70 is placed on the first line 81A serving as the forward path, and the tray 70 is placed in the first space of the L / UL chamber 10 on the first line 81A. Transport to 10A.
Further, as will be described later, in the L / UL chamber 10, the tray 70 on which the film-formed substrate 2 is placed is conveyed on the second line 82A (return path). Transport to 50.
When the tray 70 is conveyed to the L / UL chamber 10, the door valve 61 is closed, and then the chamber is evacuated by the vacuum exhaust device 12 to bring the L / UL chamber 10 into a vacuum state. After the inside of the L / UL chamber 10 is in a vacuum state, the door valve 62 with the adjacent heating chamber 20 is opened, and the tray 70 is transferred to the first space 20A of the heating chamber 20 through the first line 81A. .

L/UL室10では、トレー70の搬送後は、加熱室20とのドアバルブ62を閉状態にし、再度大気圧に戻され、次のトレー70の搬送が行われる。この際、L/UL室10は、加熱室20とのドアバルブ62が閉じられた後に、大気圧に開放されるため、加熱室20の高真空は保たれる。   In the L / UL chamber 10, after the tray 70 is transported, the door valve 62 with the heating chamber 20 is closed, the pressure is returned to the atmospheric pressure again, and the next tray 70 is transported. At this time, since the L / UL chamber 10 is opened to the atmospheric pressure after the door valve 62 with the heating chamber 20 is closed, the high vacuum of the heating chamber 20 is maintained.

トレー70が加熱室20へ搬送されると、ドアバルブ62を閉状態にする。
その後、加熱装置63にて基板2を成膜に適した温度まで加熱する。基板2の加熱が完了すると、成膜室30とのドアバルブ63を開状態にして、トレー70を第一線路81Aにて成膜室30へと搬送する。また、成膜室30で成膜処理された基板2を搭載したトレー70が、第二線路82A(復路)で搬送される。
トレー70の搬送後は、成膜室30とのドアバルブ63を閉状態にする。
When the tray 70 is conveyed to the heating chamber 20, the door valve 62 is closed.
Thereafter, the substrate 2 is heated to a temperature suitable for film formation by the heating device 63. When the heating of the substrate 2 is completed, the door valve 63 to the film forming chamber 30 is opened, and the tray 70 is transferred to the film forming chamber 30 through the first line 81A. In addition, the tray 70 on which the substrate 2 that has been subjected to the film formation process in the film formation chamber 30 is carried by the second line 82A (return path).
After transporting the tray 70, the door valve 63 to the film forming chamber 30 is closed.

成膜室30では、成膜ユニット33により、基板2が成膜処理される。ここで、この成膜装置1では、成膜室30における成膜工程はトレー70を固定静止させて成膜を行う固定成膜方式を採用している。また、基板2の周縁にはマスク76が配置されているため(図2参照)、基板2の必要な領域のみ成膜されるように構成されている。   In the film forming chamber 30, the substrate 2 is subjected to film forming processing by the film forming unit 33. Here, in this film forming apparatus 1, the film forming process in the film forming chamber 30 employs a fixed film forming method in which the film is formed with the tray 70 fixed and stationary. Further, since a mask 76 is disposed on the periphery of the substrate 2 (see FIG. 2), only a necessary region of the substrate 2 is formed.

ここで、この成膜装置1は、成膜室30が、独立した第一空間30Aと第二空間30Bに区分され、各空間毎に成膜ユニット33が配置されているとともに、前記第一空間30Aおよび前記第二空間30Bには各々往路と復路からなる線路が4本配されている。すなわち、成膜室30において、第一空間30Aと第二空間30Bのそれぞれにトレー70が配され、同時に(並行して)それぞれのトレー70に搭載されている基板2を成膜することができる。   Here, in the film forming apparatus 1, the film forming chamber 30 is divided into an independent first space 30 </ b> A and a second space 30 </ b> B, and a film forming unit 33 is arranged for each space, and the first space. In the 30A and the second space 30B, four lines each including an outward path and a return path are arranged. That is, in the film forming chamber 30, the tray 70 is disposed in each of the first space 30A and the second space 30B, and the substrate 2 mounted on each tray 70 can be formed simultaneously (in parallel). .

成膜が完了すると移動機構(図示略)により、前記トレー70を線路に対して横移動させて、往路となる第一線路81Aから、復路となる第二線路82Aに移載する。
その後、トレー70は、第二線路82Aを搬送されて、成膜室30から加熱室20を経てL/UL室10へと導かれる。
When film formation is completed, the tray 70 is moved laterally with respect to the track by a moving mechanism (not shown), and transferred from the first track 81A serving as the forward route to the second track 82A serving as the return route.
Thereafter, the tray 70 is conveyed along the second line 82 </ b> A and guided from the film formation chamber 30 to the L / UL chamber 10 through the heating chamber 20.

加熱室20とのドアバルブ63を開状態にして、トレー70を加熱室20の第一空間20Aへと搬送する。
また、成膜室30には、成膜前の基板2を搭載したトレー70が、加熱室20から第一線路81A(往路)で搬送される。
トレー70が加熱室20へ搬送されると、ドアバルブ63を閉状態にする。
The door valve 63 with the heating chamber 20 is opened, and the tray 70 is conveyed to the first space 20 </ b> A of the heating chamber 20.
Further, the tray 70 on which the substrate 2 before film formation is loaded is transported from the heating chamber 20 to the film formation chamber 30 via the first line 81A (outward path).
When the tray 70 is conveyed to the heating chamber 20, the door valve 63 is closed.

L/UL室10とのドアバルブ62を開状態にして、トレー70をL/UL室10の第一空間10Aへと搬送する。また、加熱室20には、成膜前の基板2を搭載したトレー70が、L/UL室10から第一線路81A(往路)で搬送される。
トレー70がL/UL室10へ搬送されると、ドアバルブ62を閉状態にする。
The door valve 62 with the L / UL chamber 10 is opened, and the tray 70 is transported to the first space 10 </ b> A of the L / UL chamber 10. In addition, the tray 70 on which the substrate 2 before film formation is loaded is conveyed to the heating chamber 20 from the L / UL chamber 10 through the first line 81A (outward path).
When the tray 70 is conveyed to the L / UL chamber 10, the door valve 62 is closed.

トレー70を加熱室20からL/UL室10に搬送する際は、L/UL室10は真空排気装置12により高真空に維持されているが、トレー70の搬送後は、加熱室20とのドアバルブ62が閉じられ、その後、L/UL室10は大気圧に開放される。L/UL室10が大気圧に戻ると、トレー70は、RT機構50の第三RT部51Cに搬送される。この際、L/UL室10は、加熱室20とのドアバルブ62が閉じられてから大気圧に開放されるために、加熱室20の高真空は保たれる。   When transporting the tray 70 from the heating chamber 20 to the L / UL chamber 10, the L / UL chamber 10 is maintained at a high vacuum by the vacuum exhaust device 12. The door valve 62 is closed, and then the L / UL chamber 10 is opened to atmospheric pressure. When the L / UL chamber 10 returns to atmospheric pressure, the tray 70 is transferred to the third RT unit 51C of the RT mechanism 50. At this time, since the L / UL chamber 10 is opened to the atmospheric pressure after the door valve 62 with the heating chamber 20 is closed, the high vacuum of the heating chamber 20 is maintained.

RT機構51Cへと搬送されたトレー70は、第三RT部51Cから第一RT部51Aを介して、POS機構40の第一POS機構40Aへと搬送される。
その後、POS機構40(第一POS機構40A)において、成膜済みの基板2は、トレー70から取り外されて、外部へと運び出される。
The tray 70 conveyed to the RT mechanism 51C is conveyed from the third RT unit 51C to the first POS mechanism 40A of the POS mechanism 40 via the first RT unit 51A.
Thereafter, in the POS mechanism 40 (first POS mechanism 40A), the film-formed substrate 2 is removed from the tray 70 and carried outside.

このように、本発明の実施形態では、往路と復路とをそれぞれ設けることにより、基板の搬送効率を向上することができる。また、L/UL室における被処理体の仕込みや取出を短時間で行うことができ、タクトを短縮することができる。
また、本発明の実施形態に係る成膜装置では、成膜室において独立した第一空間と第二空間とでそれぞれ成膜処理を行うことができるので、2枚の基板に対して同時に(並行して)成膜処理を行うことができ、生産性を向上することができる。また、成膜室を独立した2つの空間に区分しているので、装置を増設する必要がなく装置の低コスト化、省スペース化を図ることができる。
その結果、本発明の実施形態に係る成膜装置は、省スペース化を図るとともに、基板の搬送システムを改良し、生産性を向上することが可能である。
As described above, in the embodiment of the present invention, the substrate transfer efficiency can be improved by providing the forward path and the return path, respectively. In addition, preparation and removal of the object to be processed in the L / UL chamber can be performed in a short time, and the tact can be shortened.
Further, in the film forming apparatus according to the embodiment of the present invention, the film forming process can be performed in each of the first space and the second space independent in the film forming chamber. Film formation processing can be performed, and productivity can be improved. Further, since the film forming chamber is divided into two independent spaces, it is not necessary to add an apparatus, and the cost of the apparatus can be reduced and the space can be saved.
As a result, the film forming apparatus according to the embodiment of the present invention can save space, improve the substrate transfer system, and improve productivity.

本発明の実施形態に係る成膜装置では、SP室が独立した第一空間と第二空間に区分され、各空間毎に成膜ユニットが配置されている。独立した第一空間と第二空間とでそれぞれ成膜処理を行うことができるので、2枚の基板(被処理体)に対して同時に(並行して)成膜処理を行うことができ、生産性を向上することができる。また、SP室を独立した2つの空間に区分しているので、装置を増設する必要がなく装置の低コスト化、省スペース化を図ることができる。
また本発明の実施形態に係る成膜装置では、各々往路と復路からなる4本の線路が前記L/UL室、H室およびSP室を貫通して配置され、被処理体は、前記往路に沿って前記L/UL室から前記H室を通して、前記第一空間および前記第二空間の内部にそれぞれ運ばれ、SP室にて成膜した後、前記被処理体は、前記第一空間および前記第二空間の内部において、移動機構により往路から復路に移され、復路に沿って前記第一空間および前記第二空間の内部から、前記H室を通して前記L/UL室へ運ばれているので、往路と復路とをそれぞれ設けることにより、被処理体の搬送効率を向上することができる。また、L/UL室における被処理体の仕込みや取出を短時間で行うことができ、タクトを短縮することができる。
In the film forming apparatus according to the embodiment of the present invention, the SP chamber is divided into an independent first space and a second space, and a film forming unit is arranged for each space. Since the film formation process can be performed in the independent first space and the second space, the film formation process can be performed simultaneously (in parallel) on two substrates (objects to be processed). Can be improved. In addition, since the SP room is divided into two independent spaces, it is not necessary to increase the number of devices, and the cost and space of the devices can be reduced.
Further, in the film forming apparatus according to the embodiment of the present invention, four lines each including an outward path and a return path are disposed through the L / UL chamber, the H chamber, and the SP chamber, and the object to be processed is placed in the outbound path. Along the L / UL chamber, through the H chamber, and into the first space and the second space, respectively, and after the film formation in the SP chamber, the object to be processed is the first space and the Inside the second space, it is moved from the forward path to the return path by the moving mechanism, and is carried along the return path from the first space and the second space to the L / UL chamber through the H chamber. By providing the forward path and the return path, the conveyance efficiency of the object to be processed can be improved. In addition, preparation and removal of the object to be processed in the L / UL chamber can be performed in a short time, and the tact can be shortened.

以上、本発明の実施形態に係る成膜装置について説明してきたが、本発明はこれに限定されるものではなく、発明の趣旨を逸脱しない範囲で、適宜変更が可能である。   The film forming apparatus according to the embodiment of the present invention has been described above. However, the present invention is not limited to this, and can be changed as appropriate without departing from the spirit of the invention.

本発明は、基板を縦型搬送するインライン式の成膜装置に広く適用可能である。   The present invention can be widely applied to an in-line film forming apparatus that vertically conveys a substrate.

1 成膜装置
2 基板(被処理体)
10 L/UL室
20 加熱室(H室)
30 成膜室(SP室)
40 POS機構
50 RT機構
70 トレー
81A,81B 第一線路(往路)
82A,82B 第二線路(復路)
DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 2 Substrate (object to be processed)
10 L / UL room 20 Heating room (H room)
30 Deposition chamber (SP chamber)
40 POS mechanism 50 RT mechanism 70 Tray 81A, 81B First line (outward)
82A, 82B Second track (return)

Claims (5)

L/UL室と、
前記L/UL室に連通するH室と、
前記H室に連通し、且つ独立した第一空間と第二空間とに区分されたSP室と、
前記第一空間及び前記第二空間にそれぞれ配置された成膜ユニットと、
前記L/UL室、前記H室、前記第一空間、および前記第二空間に独立して設けられて、それらの内部をそれぞれ真空排気するための真空排気装置と、
前記L/UL室および前記H室を貫通し、前記第一空間および前記第二空間に配置された各々往路と復路からなる4本の線路と、
被処理体を、前記往路に沿って前記L/UL室から前記H室を通して、前記第一空間および前記第二空間の内部にそれぞれ運び、及び、前記復路に沿って前記第一空間および前記第二空間の内部から、前記H室を通して前記L/UL室へ前記被処理体を運ぶ搬送装置と、
前記第一空間および前記第二空間の内部において、前記搬送装置を前記往路から前記復路に移す移動機構と、
を備えてなる成膜装置であって、
前記L/UL室は、2つのドアバルブを介してRT機構に接続されており、
前記RT機構は、第1RT機構と、第2RT機構と、第3RT機構とを備え、
前記第3RT機構と前記第1RT機構との間では、前記第一空間に搬送する被処理体を処理し、
前記第3RT機構と前記第2RT機構との間では、前記第二空間に搬送する被処理体を処理することを特徴とする成膜装置。
L / UL room,
H room communicating with the L / UL room;
An SP room that communicates with the H room and is divided into an independent first space and a second space;
A film forming unit disposed in each of the first space and the second space;
An evacuation device provided independently in the L / UL chamber, the H chamber, the first space, and the second space, for evacuating the interior of each,
Four lines that pass through the L / UL chamber and the H chamber, and that are respectively arranged in the first space and the second space, each consisting of an outward path and a return path,
The object to be processed is carried along the forward path from the L / UL chamber through the H chamber to the inside of the first space and the second space, respectively, and along the return path, the first space and the first space A transfer device for transferring the object to be processed from the inside of the two spaces to the L / UL chamber through the H chamber;
In the first space and the second space, a moving mechanism that moves the transfer device from the forward path to the return path;
A film forming apparatus comprising:
The L / UL chamber is connected to the RT mechanism through two door valves,
The RT mechanism includes a first RT mechanism, a second RT mechanism, and a third RT mechanism,
Between the third RT mechanism and the first RT mechanism, the object to be processed transported to the first space is processed,
A film forming apparatus characterized in that an object to be processed conveyed to the second space is processed between the third RT mechanism and the second RT mechanism .
前記搬送装置は、前記被処理体を縦型搬送することを特徴とする請求項1に記載の成膜装置。 The film forming apparatus according to claim 1, wherein the transfer device transfers the object to be processed in a vertical type. 前記成膜ユニットが、スパッタ用のカソードであることを特徴とする請求項1又は2に記載の成膜装置。 The film forming unit, the film forming apparatus according to claim 1 or 2, characterized in that a cathode for sputtering. 前記成膜ユニットが、CVD用の平行平板型の電極であることを特徴とする請求項1又は2に記載の成膜装置。 The film forming unit, the film forming apparatus according to claim 1 or 2, characterized in that an electrode of a parallel plate type for CVD. 前記搬送装置は、その下部に円柱形のスライドシャフトを備え、
前記線路は、前記搬送装置を誘導するU字状の溝を備えた、複数のローラであり、
前記スライドシャフト又は前記ローラの一方の少なくとも接触部が、シリコン、アルミニウム、酸素、および窒素を含むバルク体から構成され、
前記スライドシャフト又は前記ローラの他方の少なくとも接触部が、ステンレス綱から構成されていることを特徴とする請求項1乃至のいずれか1項に記載の成膜装置。
The transport device includes a cylindrical slide shaft at a lower portion thereof,
The track is a plurality of rollers provided with a U-shaped groove for guiding the conveying device,
At least the contact portion of one of the slide shaft or the roller is composed of a bulk body containing silicon, aluminum, oxygen, and nitrogen,
Wherein at least the contact portion other of the slide shaft or the roller, the film forming apparatus according to any one of claims 1 to 4, characterized in that it is constructed from stainless steel.
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