JP2019119903A - Device for heating substrate and film deposition apparatus - Google Patents

Abstract

To provide a technique capable of equalizing the temperature distribution of a substrate in the heat treatment of the substrate.SOLUTION: A device 120 for heating a substrate chamber 12 comprises: a heating chamber having entrances 110 and 130 for taking in/out a substrate; a movable floor 122 capable of moving in the inside of the heating chamber 12 and moving to a first position allowing to take the substrate in/out the heating chamber 12 from the entrances 110 and 130 and a second position where a direction extending the mounted substrate 2 separates from the entrances 110 and 130; a heater 121 placed on the movable floor 122 so as to face the surface of the substrate 2 mounted on the movable floor 122; and reflectors 123a and 123b arranged to face each other in the inside of the heating chamber 12 and facing an end portion of the substrate 2 mounted on the movable floor 122 when the movable floor 122 is at the second position.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate heating apparatus and a film forming apparatus.

  In a film formation process of a substrate used for a semiconductor device, a pretreatment for heating the substrate before the film formation process is performed for the purpose of improving adhesion of a thin film to the substrate, etc. (Patent Document 1). In an apparatus configuration in which the substrate is supported and transported in a state where the substrate stands vertically (in which the processed surface is vertical), the substrate follows the transport path linearly extending along the surface of the substrate and moves between the chambers. Moving. In the preparation chamber in front of the film formation processing chamber, a heater such as a lamp heater is disposed beside the substrate transfer path, the substrate is stopped at a position facing the heater, and the substrate is heated by radiant heat of the heater. That is, a heating zone for heating the substrate is formed in part of the substrate transfer path.

International Publication No. 2012/140799

  As an example of the configuration of the heater, a plurality of rod-like heating elements extended in the transport direction of the substrate are vertically arranged in parallel (in the direction orthogonal to the transport direction), and a reflector that reflects the radiant heat of the heating element is the back side of the heating elements The line type heater arranged at is known. In the substrate temperature distribution, when the length of the heater is not sufficiently large relative to the substrate size, the state of heat radiation from the heater to the substrate differs between the vicinity of the center and the end of the substrate. The temperature tends to be high near the center and low at the end. In addition, the temperature of the stocker chamber side is lower than the processing chamber side of the preparation chamber, which contributes to the influence on the uniformity of the temperature distribution of the substrate. Therefore, for example, if a heater longer than the substrate is used, the temperature distribution of the substrate can be improved, but the need to increase the size of the feeding chamber arises, leading to an increase in the size of the apparatus. It leads to the enlargement of the print.

  Since unevenness in the temperature distribution of the substrate affects the film deposition process, it is conceivable to additionally dispose a reflector for the purpose of homogenizing the temperature distribution of the substrate. In order to effectively reflect the radiant heat of the heater with respect to the end of the substrate in the transport direction, it is preferable to arrange the reflectors at positions sandwiching the substrate in the transport direction. However, in order to dispose the reflector at a position that blocks the transport path of the substrate, it is necessary to configure the reflector to be able to move forward and backward with respect to the transport path of the substrate. The door valve provided between the preparation chamber and the processing chamber is provided so as to slide forward and backward movably with respect to the substrate transfer path, and is installed in the interior of the preparation chamber. It is conceivable to attach a reflector. However, since the door valve provided between the opposite feed chamber and the stocker chamber is disposed inside the stocker chamber, that is, outside the feed chamber, it is difficult to attach the reflector. In order to make the temperature distribution uniform, it is necessary to dispose reflectors on both sides in the substrate transfer direction. Therefore, for example, when adopting a configuration in which the other reflector on the opposite side can move forward and backward with respect to the substrate transfer path in conjunction with the opening and closing operation of the door valve to which one reflector is attached There is a concern that it will increase and lead to higher costs.

  An object of the present invention is to provide a technique capable of making the temperature distribution of a substrate uniform in the heat treatment of the substrate.

In order to achieve the above object, the substrate heating apparatus of the present invention is
A substrate heating device,
A heating chamber having a port for taking in and out the substrate;
A movable floor capable of moving the inside of the heating chamber, wherein a first position enabling the substrate to be taken in and out of the heating chamber from the outlet, and a second position in which the extending direction of the loaded substrate deviates from the outlet , Movable floor, and
A heater installed on the movable floor so as to face the surface of the substrate placed on the movable floor;
A reflector disposed to face the inside of the heating chamber, wherein the reflector faces the end of the substrate placed on the movable floor when the movable floor is at the second position;
And the like.
In order to achieve the above object, the film forming apparatus of the present invention is
A film forming apparatus for forming a film on a substrate, wherein
A deposition chamber for depositing a film on a substrate;
A stocker room in which the substrate is accommodated;
The substrate heating apparatus according to the present invention, the substrate heating apparatus having a first port for taking in and out the substrate between the film forming chamber and the second port for taking in and out the substrate between the stocker chamber. When,
A substrate transfer unit for supporting and moving a substrate between the film forming chamber, the stocker chamber, and the heating chamber;
And the like.

  According to the present invention, the temperature distribution of the substrate can be made uniform in the heat treatment of the substrate.

A schematic sectional view of a substrate heating apparatus according to a first embodiment of the present invention A schematic sectional view of a substrate heating apparatus according to a first embodiment of the present invention A schematic sectional view of a substrate heating apparatus according to a first embodiment of the present invention A schematic sectional view of a substrate heating apparatus according to a first embodiment of the present invention Schematic of the film-forming apparatus based on the Example of this invention An example of the flowchart of the film forming process in the embodiment of the present invention A schematic cross-sectional view of a substrate heating apparatus according to a second embodiment of the present invention A schematic cross-sectional view of a substrate heating apparatus according to a second embodiment of the present invention A schematic cross-sectional view of a substrate heating apparatus according to a second embodiment of the present invention A schematic cross-sectional view of a substrate heating apparatus according to a second embodiment of the present invention A schematic view showing a schematic configuration of a substrate transfer mechanism in a reference example A schematic sectional view showing a schematic configuration of a substrate transfer mechanism in a reference example Diagram showing control of the substrate transfer mechanism in the reference example Example of control flow of substrate transfer mechanism in reference example The schematic diagram which shows the mode of control of the board | substrate conveyance mechanism in the comparative example of a reference example A schematic view showing a state of control of a substrate transfer mechanism in a reference example Schematic of substrate processing apparatus

Hereinafter, with reference to the drawings, modes for carrying out the present invention will be exemplarily described in detail based on examples. However, the dimensions, materials, shapes, etc. of the components described in this embodiment should be changed as appropriate depending on the configuration of the apparatus to which the invention is applied and various conditions. That is, the scope of the present invention is not intended to be limited to the following embodiments.

Example 1
<Overall configuration of film forming apparatus>
FIG. 5 is a schematic view schematically showing an entire configuration of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 performs a film forming process on a stocker chamber 11 in which a substrate 2 to be subjected to a film forming process is accommodated, a heating chamber (preparation chamber) 12 for heating the substrate 2 and a processed surface of the substrate 2. And a film forming chamber 13. In the film forming chamber 13, a film forming process is performed on the surface to be processed of the substrate 2 and a substrate processing apparatus 14 for performing pretreatment and etching such as cleaning of the surface to be processed of the substrate 2 prior to the film forming process. And a sputtering apparatus 15 as a film forming unit. The film forming apparatus 1 of the present embodiment is a substrate holder supporting portion as a transport means which is held by the substrate holder 30 in a state where the substrate 2 is vertically erected (in which the treated surface is vertical). The substrate 43 is transported to each chamber by moving between the chambers 43 (see FIG. 3).

  FIG. 6 is an example of a flowchart of the film forming process in the present embodiment. The substrate 2 is sequentially transported from the stocker chamber 11 to the heating chamber 12 (S101), from the heating chamber 12 to the substrate processing apparatus 14 of the film forming chamber 13 (S103), and from the substrate processing apparatus 14 to the sputtering apparatus 15 (S105). The film forming process is performed. After the substrate 2 is heat-treated by the heater 121 in the heating chamber 12 (S102), first, the surface treatment of the film forming chamber 13 by the substrate processing apparatus 14 is performed (S104). Next, the substrate 2 subjected to the surface treatment is subjected to a sputtering process using the targets 151 and 152 made of various different materials by the sputtering apparatus 15 (S106), and the film forming process is completed. In addition, the flow of the film-forming process shown here is an example to the last, and it is not limited to the process content shown here.

The film deposition apparatus 1 according to the present embodiment is applicable to, for example, various electrode formations involving pretreatment. Specific examples thereof include, for example, deposition of a plating seed film for an FC-BGA (Flip-Chip Ball Grid Array) mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device. In addition, a conductive hard film in the bonding portion of the LED, a film formation of a terminal portion film of MLCC (Multi-Layered Ceramic Capacitor), and the like can also be mentioned. In addition, it is applicable also to film-forming of the electromagnetic shielding film in an electronic component package, and the terminal part film of a chip resistor. The size of the processing substrate 2 may be, for example, 200 mm × 200 mm in height and width and 0.7 to 6.0 mm in thickness. The material of the substrate 2 is glass, alumina, ceramic, LTCC (Low
Temperature Co-fired Ceramics: low temperature co-fired ceramics) and the like.

<Substrate transport configuration>
As shown in FIG. 3, as described above, the substrate 2 is transported between the chambers of the film forming apparatus 1 in a vertically standing state, and the processing surface 21 is vertical also in the heating chamber 12 (chamber). It is installed in the posture which becomes (the processing surface 21 turned to horizontal direction). In the substrate 2, the peripheral portion of the outer periphery of the processing area is held and held by the substrate holder 30 in a state where both surfaces of the processing surface 21 and the back surface are opened (exposed). The substrate holder 30 holding the substrate 2 is supported by the substrate holder support 43. The substrate holder support portion 43 includes wheels 431 as substrate transfer means at the lower side, and can move on the rails 432 laid on the bottom surfaces of the respective chambers of the film forming apparatus 1 with the substrate holder 42 supported. Is configured. The term "perpendicular" as used herein means being perpendicular to the bottom surface of each chamber or the upper surface of the rail 432 (substrate transfer surface), and may not match the gravity direction (vertical direction) depending on the apparatus configuration. Similarly, the horizontal direction referred to here may not coincide with the direction orthogonal to the gravity direction. That is, in the present embodiment, assuming that the installation surface of the substrate holder support 43 on the inner wall of each chamber is a horizontal plane, the description is made to define the directions of the upper, lower, right and left. Needless to say, the left-right direction also changes accordingly.

  As described above, the substrate holder 30 exposes the processing region (the processing surface 21) of the substrate 2 to hold the substrate 2, and the substrate holder 30, which is the first frame, is The substrate 2 is held by sandwiching the both surfaces of the substrate 2 with the substrate holder main body 32 which is the frame body 2. The substrate holder 31 and the substrate holder main body 32 are fastened and fixed to each other by a screw 33 as a fastening means in a state in which the substrate 2 is held. The substrate presser 31 and the substrate holder main body 32 are tightened at a plurality of locations by a plurality of screws 33. The substrate holder 30 of the present embodiment is configured to align and hold two substrates 2a and 2b in the substrate transport direction.

  On the back side of the substrate holder main body 32, an RF electrode 34 for connecting to a high frequency (RF) power supply of the substrate processing apparatus 14 is provided. When the high frequency reverse sputtering is performed on the substrate 2, the substrate holder 30 is transported to the substrate processing apparatus 14 in the film forming chamber 13 and brought into contact with the RF electrode 34 and the RF power supply unit 140 on the substrate processing apparatus 14 side. A voltage is applied to the substrate 2 from the power supply of the apparatus 14 through the substrate holder 30 (see FIG. 5).

  As shown in FIG. 5, the rails 432 are provided in each of the stocker chamber 11, the heating chamber 12, and the film forming chamber 13, and the rails 432 extend straight from the stocker chamber 11 to the heating chamber 12 and the film forming chamber 13. A transport path of the substrate 2 extending in a straight line is formed. The stocker chamber 11 is a place where the substrate 2 before the film forming process is performed and the substrate 2 subjected to the film forming process temporarily stand by, and the direction in the stocker chamber 11 orthogonal to the substrate transfer path Are mounted on the slide movable table 111 respectively. The substrate 2 to be subjected to the film forming process is first carried into the stocker chamber 11, subjected to the film forming process through the heating chamber 12 and the film forming chamber 13, and then carried out through the heating chamber 12 and the stocker chamber 11. .

  In the stocker chamber 11, the table 111 has a plurality of rail pairs 432 aligned in a direction perpendicular to the substrate transfer path, and is configured to be capable of mounting a plurality of substrate holders 30 (substrate holder support portions 43). When feeding the substrate 2 to the heating chamber 12, the rail 432 on which the target substrate holder 30 is placed is in front of the communication port (outlet) 110 between the stocker chamber 11 and the heating chamber 12. The table 111 slides on the rail 113. Further, when the substrate 2 on which the film forming process has been completed is unloaded from the heating chamber 12, the table 111 is a rail so that the empty rail pair 432 on which the substrate holder 30 is not placed is the front of the communication port 110. Slide on 113.

<Substrate heating device>
A substrate heating apparatus 120 according to the present embodiment will be described with reference to FIGS. 1 to 4. FIG. 1 is a schematic cross-sectional view (a cross-sectional view taken along arrow A in FIG. 3) showing the configuration of a substrate heating apparatus 120 according to the present embodiment, showing a substrate heating zone formed (in movable floor First position). FIG. 2 is a schematic cross-sectional view (cross section A of FIG. 3) of the substrate heating apparatus according to the embodiment of the present invention, showing a state in which the heating lanes are aligned with the substrate transport path (the movable floor 2 positions). FIG. 3 is a schematic cross-sectional view of the substrate heating apparatus according to the embodiment of the present invention (cross section B in FIG. 1). FIG. 4 is a schematic cross-sectional view of the substrate heating apparatus according to the embodiment of the present invention (cross section taken along arrow C in FIG. 1).
In the heating chamber 12, prior to the film forming process in the film forming chamber 13, a heat treatment for the purpose of enhancing the adhesion of the thin film to the substrate 2 is performed. A communication port (outlet) 130 for taking the substrate holder 30 into and out of the heating chamber 12 with the film forming chamber 13, a door valve 132 for opening and closing the communication port 130, and a movable movable in the heating chamber 12 A table 122 as a floor is provided. The communication port 110 with the stocker chamber 11 is opened and closed by a door valve 112 provided on the stocker chamber 11 side. The heating chamber 12 is configured to be able to adjust the pressure in the room by the exhaust device 124. In addition, illustration is abbreviate | omitted about the structure of each door valve.

  The substrate holder support portion 43 carried into the heating chamber 12 is placed on the table 122, and the substrate 2 is subjected to various adjustments before the heating process and the film forming process. The table 122 includes two transport lanes of the substrate holder support 43. That is, on the table 122, two sets of rail pairs 432 are arranged in a direction perpendicular to the substrate transfer direction to form a first transfer lane 122a and a second transfer lane 122b. The communication port 110 and the communication port 130 are provided at mutually opposing positions in the heating chamber 12, and the table 122 is configured to be slidably movable on the rail 125 in the direction orthogonal to the opposing direction of the communication port 110 and the communication port 130. It is done. That is, the table 122 is moved so that one of the two transfer lanes 122 a and 122 b is bridged between the communication port 110 and the communication port 130. As a configuration for sliding the table 122 back and forth on the rail 125, for example, a conventionally known mechanism such as a pneumatic cylinder mechanism can be used as appropriate.

  A lamp heater (hereinafter, heater) 121 is installed in the transfer lane 122 a of the two transfer lanes 122 a and 122 b provided on the table 122. The transfer lane 122 a is configured to be able to perform a heating process on the substrate 2 supported by the placed substrate holder support portion 43 as a heating lane. The heater 121 includes a first heater unit 121 a for heating the surface to be processed 21 of the substrate 2 and a second heater unit 121 b for heating the back surface 22 of the substrate 2. Each of the heater units 121a and 121b is controlled in temperature to a desired substrate heating temperature by controlling the power supplied from the power supply 126 by a power supply circuit and a control circuit (not shown).

The first heater unit 121a is a line heater provided with five rod-like heating elements 1211a that generate heat when energized, and the five heating elements 1211a extend in parallel with the substrate transfer direction in the substrate standing direction (vertical They are arranged at equal intervals in the direction (direction orthogonal to the substrate transfer direction). A reflector 1212a for reflecting the heat radiated from the heat generating body 1211a toward the substrate 2 is disposed on the back side of the five heat generating bodies 1211a. The heating element 1211 a and the reflector 1212 a are supported by a support frame 1213 a installed on the table 122.
The second heater unit 121b includes two heating elements 1211b, and two heating elements 1211b are arranged in the substrate standing direction (longitudinal direction) so as to extend in parallel with the substrate transfer direction. A reflector 1212b is disposed on the back side of the two heating elements 1211b. The heating element 1211 b and the reflector 1212 b are supported by a support frame 1213 b installed on the table 122.
A reflector 1214 is disposed above the first heater unit 121 a and the second heater unit 121 b so as to face the upper side end of the substrate 2. The reflectors 1214 are supported on the upper portions of the support frames 1213a and 1213b, and reflect the heat propagated upward from the heating elements downward toward the substrate 2.

A pair of reflectors 123 a and 123 b is attached to the inner wall of the heating chamber 12. The reflector pair 123a, 123b is a configuration for assisting the heating of both end portions of the substrate 2 in the substrate transport direction at the time of substrate heating. The reflectors 123a and 123b are disposed at mutually opposing positions, and the reflector 123a is disposed beside the communication port 130, and the reflector 123b is disposed beside the communication port 110. The opposing direction of the reflectors 123a and 123b is parallel to the opposing direction of the communication ports 110 and 130, and the reflectors 123a and 123b are opposed regions of the communication ports 110 and 130, ie, from the substrate transport path connecting the communication ports 110 and 130. Opposite each other at the dislocated position.
The reflectors 123a and 123b are plate-like members made of molybdenum, tungsten, SUS (Steel Use Stainless) or the like, and configured to reflect heat of the heater 121 toward the substrate 2 with directivity. As shown in FIG. 3, when viewed in the direction along the substrate transfer path, the reflectors 123a and 123b are such that the substrate holder 30, the heater units 121a and 121b, and the reflector 1214 fit inside the opposing region. It has become a size. The shapes of the reflectors 123a and 123b and the relative arrangement with respect to the substrate holder 30 are not limited to the configuration shown here. As in the present embodiment, the configuration may be different from that of the present embodiment as long as it is possible to achieve uniform heating effect and substrate temperature distribution on the substrate end.

  In the substrate heating process, first, the table 122 is set such that the position of the first transfer lane (heating lane) 122a on which the heater 121 is installed, of the two transfer lanes 122a and 122b, coincides with the communication port 110 (first position). And the substrate holder 30 is carried in (FIG. 2). Then, a position (second position) where the substrate holder 30 placed on the first transport lane 122a is located between the reflector pair 123a and 123b (the first transport lane 122a is located in the opposing region of the reflector pair 123a and 123b) Slide the table 122)) (FIG. 1). As a result, the reflectors 123a and 123b are disposed at positions facing the both end portions of the substrate 2 in the substrate transfer direction (a substrate heating zone is formed in the heating chamber 12). In this state, the communication ports 110 and 130 are hermetically sealed by the door valves 112 and 132, a predetermined room pressure is formed by the exhaust device 124, power is supplied to the heater 121, and the heat of each heating element 1211 is used. The heat treatment of the substrate 2 is performed. As shown in FIG. 3, in a state in which the substrate holder 30 and the heater 121 of the first transport lane 122a are accommodated in the opposing region of the reflector pair 123a, 123b, the substrate holder 30 is a reflector in the front, rear, left, right and up Is placed. Thus, a substrate heating zone in which the substrate holder 30 is surrounded by various reflectors is formed.

  As described above, in the line type heater, the temperature distribution of the heating element extending in the transport direction of the substrate tends to be a distribution in which the temperature is high near the center and low at the end in the transport direction of the substrate. Heating of the end tends to be insufficient. When two substrates 2 are arranged side by side as in this embodiment, the upstream end 23a of the substrate 2a on the upstream side (the stocker chamber 11 side) of the two substrates 2 in the transport direction and the downstream side With the conventional heating mechanism, the downstream end 23b of the substrate 2b on the film chamber 13 side) tends to be insufficiently heated. According to this embodiment, the reflector 123a is disposed opposite to the end 23a of the substrate 2a on the upstream side in the transport direction, and the reflector 123b is disposed opposite to the end 23b of the substrate 2b on the downstream side. Thus, by performing heater heating in the configuration in which the reflectors 123a and 123b are arranged, the respective end portions 23a and 23b of the two substrates 2 can be sufficiently heated, and the temperature distribution of each substrate 2 can be made uniform. Can be

  Of the two transfer lanes 122a and 122b of the table 122, the second transfer lane 122b where the heater 121 is not installed forms a second substrate transfer path connecting the communication port 110 and the communication port 130 during the substrate heating process. Do. That is, when the first conveyance lane 122a in which the heater 121 is installed is positioned in the opposing region of the reflectors 123a and 123b, the two conveyance lanes 122a and 122b face the communication openings 110 and 130, respectively. It is arranged to be located in the area. Thus, while the substrate 2 is subjected to the heat treatment in the first conveyance lane 122a, for example, the substrate 2 subjected to the film formation treatment in the film formation chamber 13 in the previous film formation step is subjected to the second conveyance lane 122b. Can be collected from the film forming chamber 13 to the stocker chamber 11, and the process time can be shortened when the film forming process is performed on a plurality of substrates 2.

(Example 2)
A substrate heating apparatus 120b according to a second embodiment of the present invention will be described with reference to FIGS. The same reference numerals as in the first embodiment denote the same parts in the second embodiment, and a description thereof will not be repeated. In the first embodiment, a reflector for enhancing the heating effect of the substrate end is fixed to the inner wall of the heating chamber, whereas in the second embodiment, the reflector is movable. .

  In the present embodiment, the reflectors 123a and 123b are fixed to the inner wall of the heating chamber 12 via an extendable arm 127 as an extendable member capable of extending and retracting. The telescopic arm 127 is configured to be capable of controlling telescopic operation by a mechanism using a pneumatic cylinder, for example. The reflectors 123a and 123b are supported by two telescopic arms 127 (see FIG. 10). The reflectors 123a and 123b are configured such that the facing positions in the heating chamber 12 can be changed by the expansion and contraction operation of the expansion and contraction arm 127. Therefore, by variously combining the positions of the reflectors 123a and 123b and the position of the table 122, it is possible to arrange the substrate heating zone at various positions in the heating chamber 12. In the present embodiment, as shown in FIG. 10, the reflectors 123a and 123b are supported by two telescopic arms 127 arranged at the top and bottom respectively, but the number and arrangement of the telescopic arms 127 are not limited. It is not limited to the configuration shown in the embodiment.

  FIG. 7 is a view showing the relative arrangement of the reflectors 123a and 123b and the table 122 when the substrate heating zone is arranged (formed) at the same position as that of the first embodiment. The telescopic arms 127 are respectively contracted and contracted, and the reflectors 123a and 123b are arranged to face each other at positions away from the communication ports 110 and 130, that is, at positions away from the transport path of the substrate. The table 122 is positioned such that the first transport lane 122a in which the heater 121 is disposed is positioned between the facing reflectors 123a and 123b at a position out of the facing region of the communication ports 110 and 130. Thus, as in the first embodiment, the substrate heating zone is formed at a position deviated from the substrate transfer path. At this time, the second transfer lane 122b is positioned on the transfer path of the substrate, and another substrate holder is connected through the communication ports 110 and 130 while performing the substrate heating process as in the first embodiment. It is possible to let the heating chamber 12 pass.

  FIG. 8 is a view showing a state of relative arrangement enabling loading and unloading of the substrate holder 30 with respect to the first transfer lane 122a. Each of the telescopic arms 127 is contracted and contracted, and the reflectors 123a and 123b are at positions away from the communication ports 110 and 130, while the second transport lane 122b is at a position where a part of the substrate transport path is formed. The substrate holder 30 can be carried in and out of the second transport lane 123b.

  FIG. 9 is a view showing the relative arrangement of the reflectors 123a and 123b and the table 122 when the substrate heating zone is arranged (formed) at a position different from the position shown in FIG. The respective expansion and contraction loads 127 are in an expanded and contracted state, and the reflectors 123 a and 123 b are arranged to be opposed to each other inside the facing areas of the communication ports 110 and 130. That is, the reflectors 123a and 123b are located at the same position as the transport path of the substrate. The table 122 is positioned such that the first transport lane 122a in which the heater 121 is disposed is inside the facing area of the communication ports 110 and 130 and inside the facing area of the reflectors 123a and 123b. Thus, the substrate heating zone is formed at a position different from the position shown in FIG. 7 (ie, Example 1).

(Reference example)
The film forming apparatus according to the reference example will be described with reference to FIGS. FIG. 11 is a schematic view showing a schematic configuration of a substrate transfer mechanism in a reference example. FIG. 12 is a schematic cross-sectional view showing a schematic configuration of a substrate transfer mechanism in a reference example. FIG. 13 is an explanatory diagram of control of the substrate transfer mechanism in the reference example. FIG. 14 is a diagram showing a control flow of the substrate transfer mechanism in the reference example. FIG. 15 is a schematic view showing the state of control of the substrate transfer mechanism in the comparative example of the reference example. FIG. 16 is a schematic view showing the state of control of the substrate transfer mechanism in the reference example. FIG. 17 is a schematic view of a substrate processing apparatus. In the present embodiment, items which are not particularly described here are the same as in the first and second embodiments, and the description thereof will not be repeated.

<Substrate processing apparatus>
FIG. 17 is a schematic view schematically showing the overall configuration of the substrate processing apparatus 14 shown in FIG. 5 (a view of the configuration of the substrate processing apparatus 14 seen in the transport direction of the substrate 2). The substrate processing apparatus 14 includes a chamber 41 forming the film forming chamber 13, a substrate holder 30, a substrate holder support portion 43, a matching box 44 and a high frequency power source 45 as voltage applying means, a pressure adjusting means 46, and a gas. And supply means 47.

  As described above, the substrate 2 is transported between the chambers of the film forming apparatus in a vertically standing state, and the processing surface 21 is vertical also in the chamber 41 (the processing surface 21 is directed in the horizontal direction). ) Installed in a posture. Of the inner wall of the chamber 41, the side wall surface and the upper surface, and the outer surface of the substrate holder support portion 43 are covered with an adhesion preventing plate 481 (a metal plate such as SUS). In addition, an adhesion prevention plate 482 is also provided on the side opposite to the substrate mounting surface side of the substrate holder 30. The adhesion preventing plates 481 and 482 prevent the material scattering during film formation from adhering to the inner wall of the chamber 41 and the outer surface of the substrate holder support portion 43 and the substrate holder 42. By disposing the adhesion prevention plates 481 and 482 and making them removable, maintenance such as cleaning and replacement can be easily performed. The deposition prevention plate 481 is connected to the chamber 41 or the substrate holder support portion 43, and they are at the GND potential (anode). Further, the adhesion preventing plate 482 is applied with a potential in the same manner as the substrate holder 30, and becomes a part of the cathode.

<Substrate surface treatment using reverse sputtering principle>
In the state where the substrate 2 is installed in the chamber 41, the discharge gas is supplied into the chamber 41 by the gas supply means 47, and the pressure in the chamber 41 is predetermined by the pressure adjusting means 46 including the vacuum pump 461 and the like. Pressure (for example, 0.3 to 1.2 Pa). As the discharge gas, for example, O ₂ , N ₂ , Ar, CF ₃ , NF ₃ and a mixed gas thereof, the atmosphere, etc. may be mentioned. The substrate holder 42 is connected to the matching box 44 and the high frequency power source 45 via the feeding part 46, and the predetermined high frequency voltage (for example, 50 to 400 W, 0.07 to 0.60 W impedance-matched by the matching box 44). / Cm ² (drive power) is applied.

  By the application of the voltage, plasma P is formed in the vicinity of the processing surface 21 of the substrate 2 and the substrate holder 30. Then, the ions or electrons in the plasma P irradiate and collide with the surface 21 to be treated of the substrate 2 and the surface is etched. As a result, for example, as a pretreatment for subsequent film formation processing (sputtering), it is possible to remove a natural oxide film, an organic substance or the like formed on the surface 21 to be treated, and the cleaning effect and the substrate surface activation effect. Is obtained.

<Substrate transfer mechanism>
The schematic configuration of a film forming apparatus 1c according to this reference example is the same as that of the first and second embodiments shown in FIG. The film forming apparatus 1 c according to the present reference example is characterized in the transfer mechanism for transferring the substrate holder 30 to the substrate processing apparatus 14. As described above, when performing high frequency (RF) reverse sputtering on the substrate 2, the substrate holder 30 is transported to the substrate processing apparatus 14 in the film forming chamber 13, and the RF electrode 34 on the back side of the substrate holder main body 32 is the substrate It is brought into contact with the RF power supply unit 140 on the processing device 14 side (FIGS. 15 (a) and (b)).

As shown in FIGS. 11 and 12, in the film forming apparatus 1c according to this embodiment, a rack and pinion mechanism is used as a mechanism for obtaining the power for transporting the substrate holder support portion 43 for supporting and transporting the substrate holder 30. ing. Specifically, the rack 433 provided in the lower part of the substrate holder support 43 and the pinion 51 provided in the substrate conveyance path 50 mesh with each other, and the rotation of the pinion 51 receives a force by the rack 433, The substrate holder support 43 moves on the substrate transfer path 50. Reference numeral 481 denotes an adhesion preventing plate (a metal plate such as SUS or aluminum) for preventing adhesion of a material that is scattered during film formation. In FIG. 12, only the rack 433 is illustrated, and the upper configuration of the substrate holder support 43 and the like is omitted. Further, in the description of the present embodiment, the illustration and the description of the wheel 431 and the rail 432 are omitted. Moreover, regarding the specific configuration of the transport mechanism, the configuration shown in the present embodiment is merely an example, and other configurations may be adopted as appropriate.

  As a drive mechanism for rotating the pinion 51, the film forming apparatus 1c according to the present embodiment includes a servomotor 52 serving as a power source, a rotary shaft 521 extending from the motor 52, and a rotary shaft via a bevel gear pair 522. And a second rotation shaft 523 that rotates in response to the rotational force 521. The rotating shaft 521 extends from the motor 52 along the substrate transfer path 50, and the rotating shaft 523 extends in a direction orthogonal to the rotating shaft 521. A pulley 524 is disposed on the outer periphery of the rotating shaft 523 and is configured to control ON / OFF of transmission of the rotational force of the rotating shaft 523 via the electromagnetic clutch 53. The electromagnetic clutch 53 brings the rotational force of the rotating shaft 523 to the pulley 524 by bringing the sliding member 531 movable in the axial direction with respect to the rotating shaft 523 into contact with the pulley 524 to control the electromagnetic force. introduce. On the other hand, the pinion 51 is assembled to a rotating shaft 511 pivotally supported between partition walls 501 which separate the film forming chamber 13 in the substrate transfer path 50 from the outside. One end of the rotating shaft 511 is connected to a pulley 512 disposed outside the partition 501 via a bearing 502 sealed using a magnetic seal with magnetic fluid. When the pulley 524 is rotated by the clutch operation of the electromagnetic clutch 53 described above, the rotational force of the pulley 524 is transmitted to the pulley 512 via the belt 54, the rotation shaft 111 is rotated, and the pinion 51 is rotated. As a result, the substrate holder support portion 43 moves on the substrate transport path 50. When the conveyance of the substrate holder support 43 is stopped, the sliding member 531 is separated from the pulley 524 by the control of the electromagnetic force of the electromagnetic clutch 53 so that the driving force of the motor 52 is not transmitted to the pulley 524. The inside of the partition 501 on which the substrate transfer path 50 in which the substrate holder 30 is transferred is formed is a vacuum pressure atmosphere, and the outside of the partition 501 is an atmospheric pressure atmosphere.

  A plurality of sensors (optical sensors) 55 for detecting the position of the substrate holder support 43 are disposed below the transfer path of the substrate holder support 43 along the transfer path, and the transfer of the substrate holder support 43 is performed. Used for position control. The sensor 55 has a light emitting unit and a light receiving unit (not shown), and the light of the light emitting unit is reflected on the lower surface of the substrate holder support unit 43 and received by the light receiving unit, thereby supporting the substrate holder above the sensor 55 The presence or absence of the part 43 is detected. In addition, as a position detection sensor, not only the optical sensor 55 shown here but another sensor may be used.

  When performing RF reverse sputtering in a vertical transport apparatus, the RF electrode 34 is provided on the back surface of the substrate holder 30 and is brought into contact with the RF power supply unit 140 provided on the apparatus side to perform RF reverse sputtering. In some cases, a method of supplying power from the transport rail 432 or the like may be used. In the method in which the RF electrode 34 is provided on the back surface of the substrate holder 30, power can be supplied from near the center of the surface of the substrate to be processed, so that the etching distribution uniformity is better than the method in which power is supplied from the transport rail 432. is there. However, in the method in which the RF electrode 34 is provided on the back surface of the substrate holder 30, contact may not occur due to the tolerance or the like of the substrate holder 30 if only position control of the servomotor 52 is performed (FIG. 15C). Therefore, in order to ensure contact, it is common to add a position sensor, a pressure sensor, etc. and confirm the contact.

  Further, as a method not using a position sensor or a pressure sensor, Japanese Patent Laid-Open No. 2004-104011 discloses a method of detecting an increase in torque of a motor generated by contact with an obstacle and stopping conveyance. This is a technique of setting in advance the torque value at the time of normal conveyance, and stopping the motor when the limit value based on the value is exceeded.

  However, when this technology is applied to the film forming apparatus 1c according to this reference example, there is no method for judging whether the position stopped by the increase in torque is always the stop at the ideal position and torque value. For example, when torque is increased due to abnormality of the motor or the transport system, the RF electrode 34 and the RF power supply are stopped because the RF electrode 34 and the RF power supply unit 140 are not in contact and try to move to the next process. Poor contact with the part 140 and abnormal discharge occur. In addition, when torque does not increase due to abnormality of the RF power supply unit 140, the substrate holder 30 may move more than the position where it should stop, and it may contact other parts of the apparatus that are not in contact and damage other parts of the apparatus. There is also.

  Furthermore, although an elastic structure is used for the RF feeding part 140 in order to reduce the impact of contact with the RF electrode 34, the motor by the repulsive force generated between the RF feeding part 140 and the RF electrode 34 after contact. Even after 52 stop, torque value may change. When the torque value increases, the repulsive force between the RF power supply unit 140 and the RF electrode 34 is large, and as a result, the phenomenon occurs in which the engagement between the transport gear of the substrate holder 30 and the gear on the apparatus side is pushed back. ing. Conversely, when the torque value decreases, the repulsive force from the RF power supply unit 140 and the RF electrode 34 is small, and as a result, the contact failure between the RF power supply unit 140 and the RF electrode 34 or the RF power supply unit 140 Deterioration of the RF electrode 34 is suspected. In a production facility using such a technology, it is always an issue to stop and operate at a fixed position and torque value at all times, and to immediately stop the device when an abnormality occurs or to notify an operator of an abnormality.

  In this reference example, the torque of the servomotor 52 for conveyance is monitored, and at the same time the RF electrode 34 and the RF power feeding unit 140 are brought into contact with each other, the stop position and the stop torque value are monitored. We propose a controller that issues a Specifically, when the RF electrode 34 passes the sensor 55 just before coming into contact with the RF power supply unit 140 (FIG. 16 (a)), the speed is reduced by controlling the rotational speed of the servomotor 52 (FIG. 14, S201, S202, S203) ). Here, in this reference example, the speed setting at normal rotation is 3000 mm / min, and the speed setting at low speed rotation is 50 to 100 mm / min. After deceleration, the substrate holder 30 (substrate holder support portion 43) is moved while monitoring the torque of the servomotor 52 and the position of the substrate holder 30 (RF electrode 34) (FIG. 14, S204, S205). In this reference example, the upper limit value of the load factor of torque of the motor 52 is 17%, the lower limit value is 6%, and the position range of the substrate holder 30 (RF electrode 34) is 40 mm to 52 mm. Travel distance after passing). The upper limit of the torque value is a range in which the RF power feeding unit 140 is not plastically deformed. When the position of the substrate holder 30 (RF electrode 34) reaches a predetermined range (FIG. 14, S205, YES) with the load factor of torque falling within the predetermined range (FIG. 14, S205, YES), the motor 52 is stopped (FIG. 14, S206, FIG. 16 (b)). Then, the stop position and the torque value are monitored until the end of discharge in the reverse sputtering process or the like.

  On the other hand, when there is an abnormality in the RF power supply unit 140, the RF electrode 34, etc., the torque value does not increase and does not stop, so when overrun, the transport of the substrate holder support 43 is stopped by position control (FIG. 14). , S207, S208, FIG. 16 (c)). If the torque falls below the lower limit after the motor stops, it is possible to predict the contact failure and the deterioration of the RF power supply unit 140 and the RF electrode 34. If the position is lower than the lower limit, the stop due to a factor other than the contact between the RF power supply unit 140 and the RF electrode 34 can be estimated (S208), the user can be notified by an alarm, and the transfer system can be promptly resolved. Furthermore, when the upper limit of the torque becomes abnormal after the motor stops, the possibility of pushing back the substrate holder 30 can be predicted. Therefore, the deceleration setting at the time of contact between the RF power supply unit 140 and the RF electrode 34 and torque limitation for motor stop You can quickly transition to changing the value.

More specifically, as shown in FIG. 13, the movement of the substrate holder 30 is started from P0, decelerated simultaneously with passing through P1, and torque starts to contact the spring-like RF feeding part 140 at P2a. The motor 52 is stopped when the torque reaches T1. At the position where the substrate holder 30 has stopped, the final stable torque value is determined by the repulsive force from the RF power supply unit 140 in contact. NG1 is a case where there is an increase in torque due to a factor other than the contact between the RF electrode 34 and the RF power supply unit 140 due to the position lower limit abnormality. NG2 is in a state where the moving distance until reaching T1 after contact with the RF power feeding portion 140 is long, and the repulsive force of the RF power feeding portion 140 is extremely reduced. NG3 is a case where the repulsive force from the RF power supply unit 140 is too pushed despite the state where the repulsive force remains sufficiently, and conversely, the substrate holder 30 may be pushed back and removed from the transport gear. Although NG 4 reaches T 1 after contact with the RF power supply unit 140, the repulsive force of the RF power supply unit 140 is weak and there is little repulsion. The cause is similar to NG2 and may occur before NG2.

  As described above, according to the present embodiment, the conveyance of the substrate holder can be appropriately controlled, and an abnormal state can be appropriately detected.

<Others>
In the present embodiment, the apparatus configuration for conveying the substrate vertically is described. However, the present invention is applicable to an apparatus configuration for conveying the substrate flat and conveying it.
Further, in the present embodiment, the heating zone is formed by sliding the substrate in the direction orthogonal to the transport direction, but the present invention is not limited to this configuration. For example, the movable floor of the heating chamber may be configured to be rotatable instead of sliding, and the heating zone may be formed by changing the orientation of the substrate holder to a rotational phase in which the end of the substrate faces the reflector. Good.
The above-described embodiments and reference examples can combine the respective configurations as much as possible.

  DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus, 2 ... board | substrate, 21 ... Processing surface, 12 ... Heating chamber, 121 ... Heater, 122 ... Table, 123a, 123b ... Reflector, 30 ... Substrate holder, 43 ... Substrate holder support part.

In order to achieve the above object, the substrate heating apparatus of the present invention is
A substrate heating device,
A heating chamber having a port for taking in and out the substrate;
A movable floor having a first substrate transfer lane and a second substrate transfer lane on which the substrate is placed and transferred, the inside of the heating chamber being movable to a first position and a second position;
A heater installed on the movable floor so as to face the surface of the substrate placed on the movable floor;
And a pair of reflectors disposed to face the interior of the heating chamber,
In the first substrate transfer lane, when the movable floor is at the first position, the substrate placed on the first substrate transfer lane can take the substrate into and out of the heating chamber from the inlet and outlet. When the movable floor is in the second position, the extending direction of the substrate placed on the first substrate transfer lane is a substrate transfer lane that is deviated from the port.
In the second substrate transport lane, when the movable floor is at the first position, the extending direction of the substrate placed on the second substrate transport lane deviates from the port, and the movable floor is the second substrate transport lane. When in the position, the substrate placed on the first substrate transfer lane is a substrate transfer lane in which the substrate can be taken in and out of the heating chamber from the inlet and outlet;
The pair of reflectors are respectively opposed to the end portion of the first substrate that has been placed on the substrate transporting lane when the movable floor is in the second position,
When the movable floor is at the second position and the substrate placed on the first substrate transfer lane is being heated by the heater, the second substrate transfer lane causes the first substrate to move from the inlet / outlet. the substrate that has been placed on the substrate transporting lane characterized that you carry in or out the another substrate.
In order to achieve the above object, the substrate heating apparatus of the present invention is
A substrate heating device,
A heating chamber having a port for taking in and out the substrate;
A movable floor capable of moving the inside of the heating chamber, wherein a first position enabling a substrate to be taken in and out of the heating chamber from the inlet and a second extending direction of the placed substrate are separated from the inlet and outlet
A movable floor, movable to a position,
A heater installed on the movable floor so as to face the surface of the substrate placed on the movable floor;
A reflector disposed to face the inside of the heating chamber, wherein the reflector faces the end of the substrate placed on the movable floor when the movable floor is at the second position;
Equipped with
The heating chamber has, as the inlet and outlet, a first inlet and a second outlet provided at mutually opposing positions in the heating chamber,
The reflector is configured to be movable to a first opposing position outside the opposing area of the first entrance and the second entrance and to a second opposing position inside the opposing area, the second opposing It is characterized in that in the position, it is possible to face the end of the substrate placed on the movable floor at the first position.
In order to achieve the above object, the film forming apparatus of the present invention is
A film forming apparatus for forming a film on a substrate, wherein
A deposition chamber for depositing a film on a substrate;
A stocker room in which the substrate is accommodated;
The substrate heating apparatus according to the present invention, the substrate heating apparatus having a first port for taking in and out the substrate between the film forming chamber and the second port for taking in and out the substrate between the stocker chamber. When,
A substrate transfer unit for supporting and moving a substrate between the film forming chamber, the stocker chamber, and the heating chamber;
And the like.

Claims (12)

A substrate heating device,
A heating chamber having a port for taking in and out the substrate;
A movable floor capable of moving the inside of the heating chamber, wherein a first position enabling the substrate to be taken in and out of the heating chamber from the outlet, and a second position in which the extending direction of the loaded substrate deviates from the outlet , Movable floor, and
A heater installed on the movable floor so as to face the surface of the substrate placed on the movable floor;
A reflector disposed to face the inside of the heating chamber, wherein the reflector faces the end of the substrate placed on the movable floor when the movable floor is at the second position;
A substrate heating apparatus comprising:   The substrate heating apparatus according to claim 1, wherein the movable floor moves between the first position and the second position in a direction orthogonal to an opposing direction of the reflector.   A second substrate transport path that enables the movable floor to move a substrate different from the substrate placed to face the heater into and out of the heating chamber from the port when the movable floor is in the second position; The substrate heating apparatus according to claim 1 or 2, comprising   The heater according to any one of claims 1 to 3, wherein the heater includes a heating element extending along a substrate transfer path of the movable floor when the substrate is taken in and out of the inlet and outlet through the heating chamber. Substrate heating device.   The heater according to claim 4, wherein the heater includes, as the heating element, a first heating element facing the processed surface of the substrate and a second heating element facing the surface of the substrate opposite to the processed surface. The substrate heating apparatus as described. The heating chamber has a first port and a second port as the port.
The reflector according to any one of claims 1 to 5, wherein the reflectors face each other at a position deviated from a substrate transfer path connecting the first port and the second port in the heating chamber. Substrate heating device.   7. The substrate heating apparatus according to claim 6, wherein the first port and the second port are provided at positions facing each other in the heating chamber.   8. The substrate heating apparatus according to claim 6, wherein the reflectors face each other in a direction parallel to the opposing direction of the first port and the second port in the heating chamber.   The reflector is configured to be movable to a first opposing position outside the opposing area of the first entrance and the second entrance and to a second opposing position inside the opposing area, the second opposing The position according to any one of claims 6 to 8, characterized in that it is possible to face the end of the substrate placed on the movable floor at the first position. Substrate heating device.   The substrate heating apparatus according to any one of claims 1 to 8, wherein the reflector is fixed to an inner wall of the heating chamber. A film forming apparatus for forming a film on a substrate, wherein
A deposition chamber for depositing a film on a substrate;
A stocker room in which the substrate is accommodated;
The substrate heating apparatus according to any one of claims 1 to 10, wherein the substrate is provided between the stocker chamber and a first inlet / outlet port for taking the substrate into / out of the film forming chamber as the inlet / outlet. A substrate heating device having a second port for taking in and out;
A substrate transfer unit for supporting and moving a substrate between the film forming chamber, the stocker chamber, and the heating chamber;
A film forming apparatus comprising:   12. The film forming apparatus according to claim 11, wherein the substrate transfer unit moves between the film forming chamber, the stocker chamber, and the heating chamber without changing the orientation of the surface of the substrate.

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