JP6465948B1 - Substrate processing apparatus and film forming apparatus - Google Patents

Abstract

The present invention provides a technique that enables uniform processing over the entire surface to be processed in substrate surface processing using the reverse sputtering principle.
A chamber in which a substrate is disposed and discharge gas is introduced, a substrate holder that holds the substrate in the chamber, and a substrate holder support that supports the substrate holder in the chamber are provided. And a voltage applying means 44 for applying a voltage to the substrate 2 using at least the chamber 41 and the substrate holder support 43 as an anode, and a discharge generated by the voltage application of the voltage applying means 44. In the substrate processing apparatus 14 that performs surface treatment of the substrate 2 by irradiating the surface of the substrate 2 with ions or electrons generated in the chamber 41, the substrate holder 42 and the substrate holder support portion 43 are connected to the substrate holder 42 and the substrate. It is connected via a floating part 50 that is electrically insulated from the holder support part 43.
[Selection] Figure 1

Description

  The present invention relates to a substrate processing apparatus and a film forming apparatus.

  In a film formation process for a semiconductor device, a substrate surface process using a reverse sputtering principle is performed as a pre-process or an etching process for cleaning the substrate surface prior to sputtering (Patent Document 1). Surface treatment by reverse sputtering is performed by introducing a discharge gas such as Ar gas into the chamber in which the substrate is disposed, and applying a predetermined high-frequency voltage to the substrate while maintaining the chamber at a predetermined vacuum pressure. . Plasma is generated by a discharge generated on the surface to be processed of the substrate by applying a voltage, and ions in the plasma collide with the surface to be processed of the substrate, whereby an oxide film or the like formed on the surface to be processed is removed.

JP 2012-132053 A

  In the voltage application to the substrate in the reverse sputtering process, the substrate mounting portion of the substrate holder is used as the cathode, and the apparatus configuration other than the substrate holder such as the chamber is the anode. In order to perform uniform processing over the entire surface to be processed of the substrate, the plasma region needs to be formed in a wider area than the surface to be processed. However, depending on the configuration of the apparatus, in a region where the substrate mounting portion of the substrate holder serving as the cathode and the anode are close to each other, charging of electrons may be hindered and plasma spreading may be hindered. As a result, the processing distribution on the target surface of the substrate may be affected.

  An object of this invention is to provide the technique which enables the uniform process of the to-be-processed surface whole region in the substrate surface process using the reverse sputtering principle.

In order to achieve the above object, a substrate processing apparatus of the present invention comprises:
A chamber in which a substrate is placed and a discharge gas is introduced;
A substrate holder for holding the substrate in the chamber;
A substrate holder support for supporting the substrate holder in the chamber;
A voltage applying means for applying a voltage to the substrate with the substrate holder as a cathode and at least the chamber and the substrate holder support as an anode;
With
In the substrate processing apparatus for performing surface treatment of the substrate by irradiating the surface of the substrate with ions or electrons generated in the chamber by discharge generated by voltage application of the voltage applying means,
The substrate holder and the substrate holder support part are connected via a floating part that is electrically insulated from the substrate holder and the substrate holder support part.
In order to achieve the above object, the film forming apparatus of the present invention comprises:
The substrate processing apparatus;
A film forming unit that performs film forming on the surface of the substrate that has been surface-treated by the substrate processing apparatus;
It is characterized by providing.

  According to the present invention, uniform processing can be performed over the entire surface to be processed in substrate surface processing using the reverse sputtering principle.

Schematic of a substrate processing apparatus according to an embodiment of the present invention Comparison explanatory drawing of the Example of this invention and a comparative example Illustration of the plasma region in the comparative example Schematic of a film forming apparatus according to an embodiment of the present invention Flow chart of film formation process

  Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention only to those unless otherwise specified. It is not intended.

Example 1
<Overall configuration of film forming apparatus>
FIG. 4 is a schematic diagram schematically showing the overall configuration of the film forming apparatus 1 according to the embodiment of the present invention. The film formation apparatus 1 includes a stocker chamber 11 in which a substrate 2 to be subjected to film formation is accommodated, a heating chamber 12 that performs a heat treatment of the substrate 2, and a film formation chamber 13 that performs a film formation process on a processing target surface of the substrate 2. And comprising. In the film forming chamber 13, prior to the film forming process, a pre-processing such as cleaning of the surface to be processed of the substrate 2 and an etching process are performed, and a film forming process is performed on the surface to be processed of the substrate 2. And a sputtering apparatus 15 as a film forming unit. The film forming apparatus 1 of the present embodiment is configured to transfer between the chambers in a state where the substrate 2 is in a vertical state (an attitude in which the surface to be processed is vertical) (see FIG. 1).

  FIG. 5 is a flowchart of the film forming process. The substrate 2 is sequentially transferred from the stocker chamber 11 to the heating chamber 12 (S101), from the heating chamber 12 to the substrate processing apparatus 14 in the film forming chamber 13 (S103), and from the substrate processing apparatus 14 to the sputtering apparatus 15 (S105). Then, a film forming process is performed. The substrate 2 is heated by the heater 121 in the heating chamber 12 (S102), and is first subjected to surface treatment by the substrate processing apparatus 14 in the film forming chamber 13 (S104). Next, the substrate 2 that has been subjected to the surface treatment is subjected to the sputtering treatment using the targets 151, 152, and 153 made of various materials by the sputtering apparatus 15 (S106), and the film formation treatment is completed.

The film forming apparatus 1 according to the present embodiment can be applied to various electrode formations involving pretreatment, for example. Specific examples include, for example, the formation of a plating seed film for an FC-BGA (Flip-Chip Ball Grid Array) mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device. In addition, a conductive hard film in the bonding part of the LED, a film formation of a terminal part film of MLCC (Multi-Layered Ceramic Capacitor), and the like are also included. In addition, the present invention can be applied to the formation of an electromagnetic shielding film in an electronic component package and a terminal film of a chip resistor. Examples of the size of the processing substrate 2 include a range of about 50 mm × 50 mm to 600 mm × 600 mm. The material of the substrate 2 is glass, alumina, ceramic, LTCC (Low
(Temperature Co-fired Ceramics).

<Substrate processing equipment>
FIG. 1 is a schematic diagram schematically showing an overall configuration of a substrate processing apparatus 14 according to the present embodiment. FIG. 1A is a schematic diagram including a configuration diagram in which the configuration of the substrate processing apparatus 14 is viewed in the transport direction of the substrate 2, and FIG. 1B illustrates the configuration of the substrate holder and the substrate holder support portion. It is the schematic diagram seen in the direction facing the processing surface. The substrate processing apparatus 14 includes a chamber 41 constituting the film forming chamber 13, a substrate holder 42, a substrate holder support 43, a matching box 44 and a high frequency power source 45 as voltage applying means, a pressure adjusting means 46, a gas Supply means 47.

  As described above, the substrate 2 is transported between the chambers of the film forming apparatus 1 in a vertically standing state, and the processing surface 21 is vertical in the chamber 41 (the processing surface 21 is in the horizontal direction). It is installed in the posture). As shown in FIG. 1, the substrate 2 is pressed against the substrate holder 42 by pressing the peripheral portion of the surface 21 to be processed by the pressing frame body 421, and the pressing frame is pressed against the substrate holder 42. The body 421 and the substrate holder 42 are held in a sandwiched state. The pressing frame 421 is fixed to the substrate holder 42 with a fastener 423 such as a screw so that the state in which the substrate 2 is sandwiched between the pressing frame body 421 and the substrate holder 42 is maintained. As described above, the substrate holder 42 that holds the substrate 2 is supported by the substrate holder support portion 43. The substrate holder support portion 43 is provided with a wheel 431 as a conveying means below, and is configured to be movable on the rail 432 laid on the bottom surface of the chamber 41 while supporting the substrate holder 42. .

  The substrate holder 42 and the substrate holder support portion 43 are connected as a connecting member via a floating portion 50 that is electrically insulated from both. The floating portion 50 is a metal plate-like member such as SUS (stainless steel), and is substantially parallel to the substrate 2 at a position almost directly below the substrate 2 and longer than the lower end side of the substrate 2. It is provided in a posture along the extending direction (the conveyance direction of the substrate 2). As a material of the floating part 50, a metal generally used in a chamber of a film forming apparatus such as aluminum can be used besides SUS.

  The floating part 50 is connected to the substrate holder 42 via a first insulating member 501 and to the substrate holder support part 43 via a second insulating member 502 as an insulating mechanism. . The insulating members 501 and 502 are made of PEEK (Poly Ether Ether Ketone), but may be made of an insulating resin such as ceramic or Teflon (registered trademark).

  Of the inner wall of the chamber 41, the side wall surface and the upper surface and the outer surface of the substrate holder support portion 43 are covered with a deposition preventing plate 481 (a metal plate such as SUS or aluminum). Further, a deposition preventing plate 482 is provided on the opposite side of the substrate holder 42 from the substrate placement surface side. The adhesion prevention plates 481 and 482 prevent the material scattered during film formation from adhering to the inner wall of the chamber 41 and the outer surfaces of the substrate holder support 43 and the substrate holder 42. By arranging the attachment prevention plates 481 and 482 and making them removable, maintenance such as cleaning and replacement can be easily performed. The deposition preventing plate 481 is connected to the chamber 41 or the substrate holder support portion 43, and they are at the GND potential (anode). Further, the deposition preventing plate 482 is applied with a potential in the same manner as the substrate holder 42 and becomes a part of the cathode.

<Substrate surface treatment using reverse sputtering principle>
In a state where the substrate 2 is installed in the chamber 41, the discharge gas is supplied into the chamber 41 by the gas supply means 47, and the pressure in the chamber 41 is set to a predetermined value by the pressure adjusting means 46 including the vacuum pump 461 and the like. At a pressure of 0.3 to 1.2 Pa, for example. Examples of the discharge gas include O ₂ , N ₂ , Ar, CF ₃ , NF _3, a mixed gas thereof, and the atmosphere. The substrate holder 42 is connected to the matching box 44 and the high-frequency power source 45 via the power supply unit 46, and a predetermined high-frequency voltage (for example, 50 to 400 W / 210 mm × 320 mm) impedance-matched by the matching box 44.
(Tray area) = 0.07-0.60 W / cm ² (driving power)) is applied.

  By the voltage application, plasma P is formed in the vicinity of the surface 21 to be processed and the substrate holder 42 of the substrate 2. Then, ions or electrons in the plasma P irradiate and collide with the surface 21 to be processed of the substrate 2, and the surface is etched. As a result, for example, as a pretreatment for the subsequent film formation process (sputtering), dirt such as a natural oxide film or an organic substance formed on the processing target surface 21 can be removed, and a cleaning effect or a substrate surface activation effect can be obtained. Is obtained.

<Excellent points of this embodiment>
With reference to FIGS. 1-3, the outstanding point of a present Example is demonstrated. FIG. 2 is a schematic diagram for explaining the features of the substrate processing apparatus 14 according to the present embodiment in comparison with the comparative example. FIG. 2A is a schematic diagram showing a configuration of a connection portion between the substrate holder 42 and the substrate holder support portion 43 of the substrate processing apparatus 14 according to the present embodiment (an enlarged view around the floating portion 50 in FIG. 1A). ). FIG. 2B is a circuit diagram schematically showing a circuit configuration of the substrate processing apparatus 14 according to the present embodiment. FIG. 2C is a schematic diagram illustrating a configuration of a connection portion between the substrate holder 42 and the substrate holder support portion 43 in the comparative example. FIG. 2D is a circuit diagram schematically showing a circuit configuration of the substrate processing apparatus 14 in the comparative example. FIG. 3 is a schematic diagram showing a plasma region formed in a comparative example (a diagram for comparison with FIG. 1B of this example).

  As shown in FIG. 1, the substrate holder support portion 43 is connected to the GND potential via the chamber 41, and the substrate holder 42 serves as a cathode when the voltage is applied to the substrate 2 by the voltage applying means, and the substrate holder support portion. 43 and the chamber 41 become anodes. Here, as shown in FIGS. 2A and 2B, in this embodiment, an electrically insulated floating portion is provided between a substrate holder 42 serving as a cathode and a substrate holder supporting portion 43 serving as an anode. 50 is provided.

  Here, in order to obtain the etching effect uniformly over the entire surface 21 of the substrate 2, the plasma P needs to be formed in a wider range than the surface 21 to be processed. That is, as shown in FIG. 1B, a region A1 above the upper end side of the processing surface 21 of the substrate 2, regions A2 and A3 outside the left and right sides of the left and right side edges of the processing surface, By forming the plasma P that spreads over a wide area up to each of the regions A4 below the lower end side of the surface 21, a sufficient etching effect can be obtained up to the periphery of the surface 21 to be processed.

  In the comparative example, as shown in FIGS. 2C and 2D, the connecting portion 49 that connects the substrate holder 42 and the substrate holder support portion 43 is connected to the substrate holder 42 via an insulating member 491. On the other hand, it is connected to the substrate holder support portion 43 via the metal member 492 and is not insulated. Therefore, the connecting portion 49 has the same potential as the substrate holder support portion 43. Therefore, in the comparative example, as shown in FIGS. 2C and 3, the anode region extends so as to block between the substrate holder 42 serving as the cathode and the region A <b> 4 where the plasma P is to be formed. It becomes. Therefore, electrons fall to the GND potential in the region A4, and the plasma P does not spread from the lower end edge 22 of the substrate 2 to the lower region A4, and is a region around the lower end side of the processing target surface 21 of the substrate 2 (region adjacent to the region A4 ) The plasma density is lowered. As a result, the etching distribution may deteriorate in a region around the lower end side of the surface 21 to be processed.

  On the other hand, in this embodiment, the floating portion 50 as a connecting portion interposed between the substrate holder 42 serving as the cathode and the substrate holder supporting portion 43 serving as the anode is electrically insulated from the cathode and the anode. Thus, charging of electrons in the region A4 is not hindered. As a result, as shown in FIGS. 1B and 2A, the plasma P spreads to the region A4 and is sufficient in the region around the lower end side of the surface to be processed 21 of the substrate 2 (region close to the region A4). Etching effect can be obtained.

<Others>
The installation location of the floating portion that is electrically insulated from the cathode and the anode shown in the present embodiment is merely an example, and a suitable installation location of the floating portion varies depending on the apparatus configuration. That is, in this embodiment, the apparatus is configured to convey the substrate vertically, and it is necessary to provide a floating portion around the lower end of the substrate, which is in the vicinity of the substrate holder supporting component serving as the anode. For example, in an apparatus configuration in which the substrate is placed flat and the reverse sputtering process is performed, a floating portion may be provided so as to surround the periphery of the substrate. Or it is good also as a structure which provides only in a required area | region among the area | regions along a board | substrate outer periphery, ie, changes only a part close | similar to the board | substrate periphery among the structural parts connected with the anode to a floating part.

  In the present embodiment, the description is given with respect to the vertical and horizontal directions on the assumption that the installation surface of the substrate holder support portion 43 on the inner wall of the chamber 41 is a horizontal plane. However, if the direction of the installation surface changes, the vertical and horizontal directions are changed. It goes without saying that the direction rules change accordingly.

  DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus, 2 ... Substrate, 21 ... Surface to be processed, 14 ... Substrate processing apparatus, 41 ... Chamber, 42 ... Substrate holder, 43 ... Substrate holder support, 44 ... Matching box, 45 ... High frequency power supply, 46 ... Pressure adjusting means, 47 ... gas supply means, 48 ... deposition preventing plate, 50 ... floating portion, 501 and 502 ... insulating member, P ... plasma

Claims (10)

A chamber in which a substrate is placed and a discharge gas is introduced;
A substrate holder for holding the substrate in the chamber;
A substrate holder support for supporting the substrate holder in the chamber;
A voltage applying means for applying a voltage to the substrate with the substrate holder as a cathode and at least the chamber and the substrate holder support as an anode;
With
In the substrate processing apparatus for performing surface treatment of the substrate by irradiating the surface of the substrate with ions or electrons generated in the chamber by discharge generated by voltage application of the voltage applying means,
The substrate processing apparatus, wherein the substrate holder and the substrate holder support part are connected via a floating part electrically insulated from the substrate holder and the substrate holder support part.   The substrate processing apparatus according to claim 1, wherein the floating part is disposed in at least a part of a region along an outer periphery of the substrate.   3. The substrate processing apparatus according to claim 1, wherein the floating portion is disposed between the substrate holder support portion and a portion of the peripheral edge of the substrate that is close to the substrate holder support portion. . The substrate holder holds the substrate so that the surface to be processed is vertical,
The substrate processing apparatus according to claim 1, wherein the floating portion is disposed below a lower end portion of the substrate.   The substrate processing apparatus according to claim 4, wherein the floating portion has a portion that is close to the lower end portion of the substrate over the entire area.   The substrate processing apparatus according to claim 1, wherein the floating part is connected to the substrate holder and the substrate holder support part via an insulating member.   The substrate processing apparatus according to claim 1, wherein the floating portion is a metal plate-like member and is disposed in parallel with a surface to be processed of the substrate. Further comprising a deposition plate disposed in the chamber;
The substrate processing apparatus according to claim 1, wherein the deposition preventing plate is included in the anode.   The substrate processing apparatus according to claim 1, wherein the substrate holder support portion is configured to be movable in the chamber. The substrate processing apparatus according to any one of claims 1 to 9,
A film forming unit that performs film forming on the surface of the substrate that has been surface-treated by the substrate processing apparatus;
A film forming apparatus comprising:

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