JP5591676B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
- Publication number
- JP5591676B2 JP5591676B2 JP2010277962A JP2010277962A JP5591676B2 JP 5591676 B2 JP5591676 B2 JP 5591676B2 JP 2010277962 A JP2010277962 A JP 2010277962A JP 2010277962 A JP2010277962 A JP 2010277962A JP 5591676 B2 JP5591676 B2 JP 5591676B2
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- Prior art keywords
- layer
- titanium nitride
- variable resistance
- titanium
- diode
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 63
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 57
- 230000015654 memory Effects 0.000 claims description 55
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 23
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 hafnium oxide Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
Landscapes
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
[構成]
先ず、図1を参照して、第1実施形態に係る半導体記憶装置の概略構成について説明する。第1実施形態に係る半導体記憶装置は、図1に示すように、メモリセルアレイ10、カラム制御回路20、ロウ制御回路30、データ入出力バッファ40、アドレスレジスタ50、コマンドI/F60、ステートマシン70、及びパルスジェネレータ80を有する。
ただし、φBは、ショットキー障壁のポテンシャル高さであり、NDは、シリサイド層123aとダイオード層122との間の界面不純物濃度である。
次に、図5〜図8を参照して、第1実施形態に係る半導体記憶装置の製造方法について説明する。
[構成]
次に、図9を参照して、第2実施形態に係る半導体記憶装置の構成について説明する。第2実施形態は、電極層123の構成についてのみ第1実施形態と異なる。なお、第2実施形態において、第1実施形態と同様の構成については同一符号を付し、その説明を省略する。
Claims (5)
- 第1配線と第2配線との間に配置され且つ整流素子と可変抵抗素子を直列接続してなるメモリセルを備えた半導体記憶装置において、
前記メモリセルは、
前記整流素子として機能するダイオード層と、
前記可変抵抗素子として機能する可変抵抗層と、
前記可変抵抗層と前記ダイオード層との間に設けられ、前記可変抵抗層及び前記ダイオード層に接するように形成された電極層とを備え、
前記電極層は、窒化チタンにて構成された窒化チタン層を備え、
前記窒化チタン層内の第1領域における窒素原子に対するチタン原子の割合を第1割合とし、前記窒化チタン層内であって且つ前記第1領域よりも前記可変抵抗層に近い第2領域における窒素原子に対するチタン原子の割合を第2割合とした場合、前記第2割合は前記第1割合よりも大きい
ことを特徴とする半導体記憶装置。 - 前記窒化チタン層は、
単位体積内で窒素原子がチタン原子よりも多くなるように構成された第1窒化チタン層と、
前記第1窒化チタン層と前記可変抵抗層との間に設けられ、且つ単位体積内でチタン原子が窒素原子よりも多くなるように構成された第2窒化チタン層とを備える
ことを特徴とする請求項1記載の半導体記憶装置。 - 前記窒化チタン層は、前記可変抵抗層から前記ダイオード層に近づくにつれ、前記窒化チタン層内の窒素原子に対するチタン原子の割合は次第に小さくなるように構成されている
ことを特徴とする請求項1または請求項2記載の半導体記憶装置。 - 前記窒化チタン層は、10nm以下の膜厚を有する
ことを特徴とする請求項1乃至請求項3のいずれか1項記載の半導体記憶装置。 - 前記ダイオード層は、
N型の第1半導体層と、
前記第1半導体層と前記電極層との間に設けられたP型の第2半導体層とを備え、
前記第1半導体層に含まれるN型の不純物の濃度、及び前記第2半導体層に含まれるP型の不純物の濃度は、各々、1×1020atms/cm3以上である
ことを特徴とする請求項1乃至請求項4のいずれか1項記載の半導体記憶装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010277962A JP5591676B2 (ja) | 2010-12-14 | 2010-12-14 | 半導体記憶装置 |
US13/314,527 US8569733B2 (en) | 2010-12-14 | 2011-12-08 | Semiconductor memory device |
US14/033,918 US8796663B2 (en) | 2010-12-14 | 2013-09-23 | Semiconductor memory device |
Applications Claiming Priority (1)
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---|---|---|---|
JP2010277962A JP5591676B2 (ja) | 2010-12-14 | 2010-12-14 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012129286A JP2012129286A (ja) | 2012-07-05 |
JP5591676B2 true JP5591676B2 (ja) | 2014-09-17 |
Family
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JP2010277962A Expired - Fee Related JP5591676B2 (ja) | 2010-12-14 | 2010-12-14 | 半導体記憶装置 |
Country Status (2)
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US (2) | US8569733B2 (ja) |
JP (1) | JP5591676B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011165854A (ja) | 2010-02-09 | 2011-08-25 | Toshiba Corp | 記憶装置及びその製造方法 |
JP5591676B2 (ja) * | 2010-12-14 | 2014-09-17 | 株式会社東芝 | 半導体記憶装置 |
JP2014011391A (ja) * | 2012-07-02 | 2014-01-20 | Toshiba Corp | 半導体記憶装置 |
US9978938B2 (en) * | 2015-11-13 | 2018-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive RAM structure and method of fabrication thereof |
US9741764B1 (en) * | 2016-02-22 | 2017-08-22 | Samsung Electronics Co., Ltd. | Memory device including ovonic threshold switch adjusting threshold voltage thereof |
KR102463023B1 (ko) | 2016-02-25 | 2022-11-03 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 이의 제조 방법 |
US9954166B1 (en) * | 2016-11-28 | 2018-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded memory device with a composite top electrode |
KR102323249B1 (ko) * | 2017-03-28 | 2021-11-08 | 삼성전자주식회사 | 정보 저장 패턴을 포함하는 반도체 소자 |
US11514985B2 (en) | 2021-04-05 | 2022-11-29 | Micron Technology, Inc. | Spike current suppression in a memory array |
US11715520B2 (en) | 2021-04-05 | 2023-08-01 | Micron Technology, Inc. | Socket structure for spike current suppression in a memory array |
US11348640B1 (en) * | 2021-04-05 | 2022-05-31 | Micron Technology, Inc. | Charge screening structure for spike current suppression in a memory array |
US11862215B2 (en) | 2021-08-27 | 2024-01-02 | Micron Technology, Inc. | Access line having a resistive layer for memory cell access |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6696355B2 (en) * | 2000-12-14 | 2004-02-24 | Ovonyx, Inc. | Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory |
JP4660095B2 (ja) * | 2002-04-04 | 2011-03-30 | 株式会社東芝 | 相変化メモリ装置 |
DE102005023670B4 (de) * | 2004-05-25 | 2007-12-27 | Samsung Electronics Co., Ltd., Suwon | Verfahren zum Ausbilden von Metall-Nitrid-Schichten in Kontaktöffnungen und integrierte Schaltung mit derart ausgebildeten Schichten |
JP4857014B2 (ja) * | 2006-04-19 | 2012-01-18 | パナソニック株式会社 | 抵抗変化素子とそれを用いた抵抗変化型メモリ |
US7869258B2 (en) * | 2008-06-27 | 2011-01-11 | Sandisk 3D, Llc | Reverse set with current limit for non-volatile storage |
WO2010029645A1 (ja) * | 2008-09-12 | 2010-03-18 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
JP2010165950A (ja) * | 2009-01-16 | 2010-07-29 | Toshiba Corp | 不揮発性半導体メモリ及びその製造方法 |
JP5364407B2 (ja) * | 2009-03-24 | 2013-12-11 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
KR101033468B1 (ko) * | 2009-06-30 | 2011-05-09 | 주식회사 하이닉스반도체 | 워드 라인의 저항을 개선할 수 있는 상변화 메모리 장치, 그것의 배열 구조, 및 그것의 제조방법 |
JP4951044B2 (ja) * | 2009-08-28 | 2012-06-13 | 株式会社東芝 | 不揮発性メモリ装置及びその製造方法 |
US8274130B2 (en) * | 2009-10-20 | 2012-09-25 | Sandisk 3D Llc | Punch-through diode steering element |
US8551850B2 (en) * | 2009-12-07 | 2013-10-08 | Sandisk 3D Llc | Methods of forming a reversible resistance-switching metal-insulator-metal structure |
WO2011092821A1 (ja) * | 2010-01-28 | 2011-08-04 | 株式会社 東芝 | 不揮発性半導体記憶装置 |
KR101699769B1 (ko) * | 2010-02-08 | 2017-01-25 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성방법 |
JP5591676B2 (ja) * | 2010-12-14 | 2014-09-17 | 株式会社東芝 | 半導体記憶装置 |
-
2010
- 2010-12-14 JP JP2010277962A patent/JP5591676B2/ja not_active Expired - Fee Related
-
2011
- 2011-12-08 US US13/314,527 patent/US8569733B2/en active Active
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2013
- 2013-09-23 US US14/033,918 patent/US8796663B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US8796663B2 (en) | 2014-08-05 |
US20140021436A1 (en) | 2014-01-23 |
US20120145986A1 (en) | 2012-06-14 |
US8569733B2 (en) | 2013-10-29 |
JP2012129286A (ja) | 2012-07-05 |
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