JP5588137B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5588137B2
JP5588137B2 JP2009211414A JP2009211414A JP5588137B2 JP 5588137 B2 JP5588137 B2 JP 5588137B2 JP 2009211414 A JP2009211414 A JP 2009211414A JP 2009211414 A JP2009211414 A JP 2009211414A JP 5588137 B2 JP5588137 B2 JP 5588137B2
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Japan
Prior art keywords
semiconductor chip
resin substrate
convex portion
support plate
semiconductor device
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Active
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JP2009211414A
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English (en)
Japanese (ja)
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JP2011061116A5 (https=
JP2011061116A (ja
Inventor
史雅 片桐
晃明 千野
昭彦 立岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2009211414A priority Critical patent/JP5588137B2/ja
Priority to US12/856,934 priority patent/US20110062578A1/en
Publication of JP2011061116A publication Critical patent/JP2011061116A/ja
Publication of JP2011061116A5 publication Critical patent/JP2011061116A5/ja
Application granted granted Critical
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/778Auxiliary members characterised by their shape in encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2009211414A 2009-09-14 2009-09-14 半導体装置の製造方法 Active JP5588137B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009211414A JP5588137B2 (ja) 2009-09-14 2009-09-14 半導体装置の製造方法
US12/856,934 US20110062578A1 (en) 2009-09-14 2010-08-16 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009211414A JP5588137B2 (ja) 2009-09-14 2009-09-14 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011061116A JP2011061116A (ja) 2011-03-24
JP2011061116A5 JP2011061116A5 (https=) 2012-08-16
JP5588137B2 true JP5588137B2 (ja) 2014-09-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009211414A Active JP5588137B2 (ja) 2009-09-14 2009-09-14 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US20110062578A1 (https=)
JP (1) JP5588137B2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901755B2 (en) * 2012-03-20 2014-12-02 Stats Chippac, Ltd. Semiconductor device and method of forming conductive layer over metal substrate for electrical interconnect of semiconductor die
US9673162B2 (en) * 2012-09-13 2017-06-06 Nxp Usa, Inc. High power semiconductor package subsystems
WO2014120807A1 (en) * 2013-01-29 2014-08-07 The Trustees Of Boston College High thermal conductivity materials for thermal management applications
US10141201B2 (en) * 2014-06-13 2018-11-27 Taiwan Semiconductor Manufacturing Company Integrated circuit packages and methods of forming same
US20200258750A1 (en) * 2017-08-17 2020-08-13 Semiconductor Components Industries, Llc Die support structures and related methods
CN110383439B (zh) * 2017-03-08 2023-04-28 三菱电机株式会社 半导体装置、其制造方法以及半导体模块
WO2019021720A1 (ja) 2017-07-24 2019-01-31 株式会社村田製作所 半導体装置及び半導体装置の製造方法
US12230502B2 (en) * 2017-08-17 2025-02-18 Semiconductor Components Industries, Llc Semiconductor package stress balance structures and related methods
US11404276B2 (en) * 2017-08-17 2022-08-02 Semiconductor Components Industries, Llc Semiconductor packages with thin die and related methods
KR102073956B1 (ko) * 2017-11-29 2020-02-05 삼성전자주식회사 팬-아웃 반도체 패키지
US10510595B2 (en) * 2018-04-30 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out packages and methods of forming the same
US10651131B2 (en) 2018-06-29 2020-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Supporting InFO packages to reduce warpage
US10998202B2 (en) * 2018-09-27 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06209054A (ja) * 1993-01-08 1994-07-26 Mitsubishi Electric Corp 半導体装置
JPH07183425A (ja) * 1993-12-24 1995-07-21 Toshiba Corp 半導体装置とその製造方法
JPH0955459A (ja) * 1995-06-06 1997-02-25 Seiko Epson Corp 半導体装置
US6734534B1 (en) * 2000-08-16 2004-05-11 Intel Corporation Microelectronic substrate with integrated devices
US20020020898A1 (en) * 2000-08-16 2002-02-21 Vu Quat T. Microelectronic substrates with integrated devices
US6423570B1 (en) * 2000-10-18 2002-07-23 Intel Corporation Method to protect an encapsulated die package during back grinding with a solder metallization layer and devices formed thereby
JP3844467B2 (ja) * 2003-01-08 2006-11-15 沖電気工業株式会社 半導体装置及びその製造方法
JP2006222164A (ja) * 2005-02-08 2006-08-24 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US8101868B2 (en) * 2005-10-14 2012-01-24 Ibiden Co., Ltd. Multilayered printed circuit board and method for manufacturing the same
JP4950693B2 (ja) * 2007-02-19 2012-06-13 株式会社フジクラ 電子部品内蔵型配線基板及びその実装部品

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Publication number Publication date
US20110062578A1 (en) 2011-03-17
JP2011061116A (ja) 2011-03-24

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