JP5582819B2 - 処理装置 - Google Patents

処理装置 Download PDF

Info

Publication number
JP5582819B2
JP5582819B2 JP2010038075A JP2010038075A JP5582819B2 JP 5582819 B2 JP5582819 B2 JP 5582819B2 JP 2010038075 A JP2010038075 A JP 2010038075A JP 2010038075 A JP2010038075 A JP 2010038075A JP 5582819 B2 JP5582819 B2 JP 5582819B2
Authority
JP
Japan
Prior art keywords
plate material
processing
processing container
processing apparatus
spacer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010038075A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011176066A (ja
Inventor
稔大 笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010038075A priority Critical patent/JP5582819B2/ja
Priority to CN201610269430.2A priority patent/CN105957791B/zh
Priority to CN2011100420019A priority patent/CN102194638A/zh
Priority to TW100105891A priority patent/TWI508165B/zh
Priority to KR1020110015879A priority patent/KR101302788B1/ko
Publication of JP2011176066A publication Critical patent/JP2011176066A/ja
Application granted granted Critical
Publication of JP5582819B2 publication Critical patent/JP5582819B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Details Of Rigid Or Semi-Rigid Containers (AREA)
JP2010038075A 2010-02-24 2010-02-24 処理装置 Expired - Fee Related JP5582819B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010038075A JP5582819B2 (ja) 2010-02-24 2010-02-24 処理装置
CN201610269430.2A CN105957791B (zh) 2010-02-24 2011-02-18 处理装置
CN2011100420019A CN102194638A (zh) 2010-02-24 2011-02-18 处理装置
TW100105891A TWI508165B (zh) 2010-02-24 2011-02-23 Processing device
KR1020110015879A KR101302788B1 (ko) 2010-02-24 2011-02-23 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010038075A JP5582819B2 (ja) 2010-02-24 2010-02-24 処理装置

Publications (2)

Publication Number Publication Date
JP2011176066A JP2011176066A (ja) 2011-09-08
JP5582819B2 true JP5582819B2 (ja) 2014-09-03

Family

ID=44602508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010038075A Expired - Fee Related JP5582819B2 (ja) 2010-02-24 2010-02-24 処理装置

Country Status (4)

Country Link
JP (1) JP5582819B2 (zh)
KR (1) KR101302788B1 (zh)
CN (2) CN102194638A (zh)
TW (1) TWI508165B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011056823A1 (de) * 2011-12-21 2013-06-27 Thyssen Krupp Steel Europe AG Düseneinrichtung für einen Ofen zum Wärmebehandeln eines Stahlflachprodukts und mit einer solchen Düseneinrichtung ausgestatteter Ofen
TWI628689B (zh) * 2013-05-09 2018-07-01 瑪森科技公司 用於保護電漿處理系統中之真空密封的系統與方法
JP6700156B2 (ja) * 2016-11-16 2020-05-27 株式会社ニューフレアテクノロジー 成膜装置
JP6633030B2 (ja) * 2017-07-14 2020-01-22 本田技研工業株式会社 レーザ遮光装置
CN109727838B (zh) * 2017-10-31 2021-09-17 北京北方华创微电子装备有限公司 一种等离子体产生腔及半导体加工设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287223A (ja) * 1985-06-14 1986-12-17 Fujitsu Ltd 熱処理炉
CN2225835Y (zh) * 1994-06-08 1996-05-01 周晨曦 便携式食品保温箱
JP4442171B2 (ja) * 2003-09-24 2010-03-31 東京エレクトロン株式会社 熱処理装置
FR2878766B1 (fr) * 2004-12-08 2007-06-22 Total France Sa Plateau interne pour enceinte
JP2006284077A (ja) * 2005-03-31 2006-10-19 Kumamoto Technology & Industry Foundation 熱輻射反射炉
CN100477091C (zh) * 2005-10-18 2009-04-08 东京毅力科创株式会社 处理装置
JP4997842B2 (ja) * 2005-10-18 2012-08-08 東京エレクトロン株式会社 処理装置
SG146607A1 (en) * 2007-05-04 2008-10-30 Asm Tech Singapore Pte Ltd Multi-layer thermal insulation for a bonding system

Also Published As

Publication number Publication date
JP2011176066A (ja) 2011-09-08
TW201203349A (en) 2012-01-16
TWI508165B (zh) 2015-11-11
KR101302788B1 (ko) 2013-09-02
CN105957791B (zh) 2018-07-10
CN102194638A (zh) 2011-09-21
CN105957791A (zh) 2016-09-21
KR20110097679A (ko) 2011-08-31

Similar Documents

Publication Publication Date Title
JP4878782B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP4782733B2 (ja) 載置台およびそれを用いたプラズマ処理装置
KR101312676B1 (ko) 액티브 냉각 기판 지지체
JP5582819B2 (ja) 処理装置
KR101876873B1 (ko) 플라즈마 처리 장치
TWI772430B (zh) 電漿處理裝置及氣體噴淋頭
US20050000430A1 (en) Showerhead assembly and apparatus for manufacturing semiconductor device having the same
JP5544907B2 (ja) ガスシャワー用の構造体及び基板処理装置
JP5329072B2 (ja) 処理容器およびプラズマ処理装置
JP4238772B2 (ja) 載置台構造及び熱処理装置
KR101176745B1 (ko) 플라즈마 처리 장치
JP6063741B2 (ja) プラズマ処理容器及びプラズマ処理装置
JP5593418B2 (ja) 処理容器およびプラズマ処理装置
CN112420472A (zh) 基片处理装置、基片处理装置的制造方法和维护方法
JP2006253312A (ja) プラズマ処理装置
CN112242291B (zh) 第一与第二导电性构件的接合构造、方法及基板处理装置
JP4190949B2 (ja) プラズマ処理装置
KR101464357B1 (ko) 기판처리장치
TWI503907B (zh) 基板處理設備

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130108

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130827

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131008

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140401

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140708

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140715

R150 Certificate of patent or registration of utility model

Ref document number: 5582819

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees