JP5580617B2 - 埋め込みチップ集積を容易にするチップ取り付け接着剤、並びに関連するシステム及び方法 - Google Patents
埋め込みチップ集積を容易にするチップ取り付け接着剤、並びに関連するシステム及び方法 Download PDFInfo
- Publication number
- JP5580617B2 JP5580617B2 JP2010031906A JP2010031906A JP5580617B2 JP 5580617 B2 JP5580617 B2 JP 5580617B2 JP 2010031906 A JP2010031906 A JP 2010031906A JP 2010031906 A JP2010031906 A JP 2010031906A JP 5580617 B2 JP5580617 B2 JP 5580617B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- parts
- weight
- flip chip
- photoacid generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/226—Mixtures of di-epoxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/2413—Connecting within a semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82009—Pre-treatment of the connector or the bonding area
- H01L2224/8203—Reshaping, e.g. forming vias
- H01L2224/82035—Reshaping, e.g. forming vias by heating means
- H01L2224/82039—Reshaping, e.g. forming vias by heating means using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
〔表1〕
サンプル XP9500 XP080702 CY184 ERL4221 Octacat 結果
1 100g − 11g − − 腐食あり
2 50g 50g 11g − − 腐食あり
3 − 100g 11g − 0.35g 腐食なし
4 − 100g − 11g 0.35g 腐食なし
限定された量のPAGを接着剤に含めると、加速水沸騰試験時に金属腐食を本質的に解消することが示された。従って、本発明の各実施形態は、腐食を防止し又は制限するために接着剤のPAG量を限定することに関わる。PAG量は、UV光への露光後にフィルム粘着性を所望の水準まで低減するのに望ましい又は必要な量まで制限され得る。尚、本来のXP9500が設計されたときの目的は開発ステップに耐え得るようにフィルムを全厚を通して硬化させることであったが、本発明の各実施形態ではこのことが問題となっている訳ではないことを特記しておく。従って、より少ないPAGの利用も適当である。
〔表2〕
物質 例 量
エポキシ系誘電材料 XP080702 100.0±0
エポキシ樹脂 CY184、ERL4221、ERL4299 11.0±5
及び/又は各種ブレンド
PAG Octacat 0.35±0.25
光増感剤 イソプロピルチオキサントン 0.5±0.5
光増感剤 2−エチル−9,10− 0.4±0.4
ジメトキシアントラセン
酸化防止剤 Irganox1010(商標) 0.0±1.0
常温触媒 ナフテン酸銅 0.0±0.1
高温触媒 CXC1612 0.0±0.5
図2は、表2に掲げた接着剤の成分の幾つかの化学構造を示す。明確に述べると、図2は、Octacat、ERL4221、ERL4299、及びCY184を示す。尚、Octacatは、蓄積せずXP9500に用いられるPAGよりも抽出性の低いPAGの一例として用いられていることを特記しておく。さらに、ナフテン酸銅はOctacatに特有の常温触媒であることを特記しておく。表2に掲げた接着剤の他の成分について述べると、Irganox1010はスイス国バーゼルに本社を置くCiba(商標)から、またCXC1612は米国コネチカット州ノーウォーク、Science Road(郵便番号06852)に本社を置くKing Industries社から入手可能である。イソプロピルチオキサントン及び2−エチル−9,10−ジメトキシアントラセンはAldrich Chemical Companyから入手可能な光増感剤であって、ビア形成に用いられるレーザ波長の近くで強い吸収を有する。
102 基材
104 基材特徴
106 接着剤
108 チップ
110 マイクロ・ビア
112 チップ・パッド
114 UVレーザ
116 金属化された特徴
Claims (9)
- フリップ・チップ・パッケージを組み立てる方法であって、
フリップ・チップ取付接着剤を用意するステップと、
前記接着剤の層を基材の上に施工するステップと、
前記接着剤を介してチップを下向き配向で前記基材に結合するステップと、
前記接着剤を紫外光で露光して前記接着剤の粘着性を制限するステップと、
前記接着剤の脆化を制限する硬化温度で前記接着剤を熱硬化するステップと、
を含み、
前記接着剤は、
光酸発生剤を含まない100重量部のエポキシ系誘電材料と、
ジグリシジル−1,2−シクロヘキサンジカルボキシレート、アジピン酸ビス(3,4−エポキシシクロヘキシルメチル)、3,4−エポキシシクロヘキシルメチル−3,4−エポキシシクロヘキサンカルボキシレート、およびこれらの混合物の群から選択された6重量部〜16重量部のエポキシ樹脂と、
0.1重量部〜0.6重量部のヘキサフルオロアンチモン酸ビス(4−アルキルフェニル)ヨードニウムの光酸発生剤と、
前記光酸発生剤を高温エポキシ触媒として作用することを可能にする、ゼロ超かつ0.1重量部以下のナフテン酸銅の常温触媒と、
を含む、
方法。 - 前記基板と硬化した前記接着剤にドリル穴あけをするステップをさらに含む、請求項1に記載の方法。
- 前記ビアを金属化するステップをさらに含む、請求項2に記載の方法。
- 焼き付けにより前記フリップ・チップ・パッケージから湿分を除去するステップをさらに含む、請求項2に記載の方法。
- 光酸発生剤を含まない100重量部のエポキシ系誘電材料と、
ジグリシジル−1,2−シクロヘキサンジカルボキシレート、アジピン酸ビス(3,4−エポキシシクロヘキシルメチル)、3,4−エポキシシクロヘキシルメチル−3,4−エポキシシクロヘキサンカルボキシレート、およびこれらの混合物の群から選択された6重量部〜16重量部のエポキシ樹脂と、
0.1重量部〜0.6重量部のヘキサフルオロアンチモン酸ビス(4−アルキルフェニル)ヨードニウムの光酸発生剤と、
前記光酸発生剤を高温エポキシ触媒として作用することを可能にする、ゼロ超かつ0.1重量部以下のナフテン酸銅の常温触媒と、
を含む、フリップ・チップ取付接着剤。 - ゼロ超かつ0.1重量部以下の酸化防止剤と、
前記接着剤のレーザ焼灼を促進する、ゼロ超かつ1.8重量部以下の光増感剤と、
をさらに含む、請求項5に記載のフリップ・チップ取付接着剤。 - 前記光増感剤が、イソプロピルチオキサントン、アントラセン、ジメトキシアントラセン、2−エチル−9,10−ジメトキシアントラセン、およびこれらの混合物の群から選択される、請求項6に記載のフリップ・チップ取付接着剤。
- 前記エポキシ系誘電材料が露光現像型である、請求項5に記載のフリップ・チップ取付接着剤。
- 前記光酸発生剤が、以下の化学構造を有する、請求項5に記載のフリップ・チップ取付接着剤。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/389,060 | 2009-02-19 | ||
US12/389,060 US8604612B2 (en) | 2009-02-19 | 2009-02-19 | Chip attach adhesive to facilitate embedded chip build up and related systems and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010192900A JP2010192900A (ja) | 2010-09-02 |
JP5580617B2 true JP5580617B2 (ja) | 2014-08-27 |
Family
ID=42208689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010031906A Active JP5580617B2 (ja) | 2009-02-19 | 2010-02-17 | 埋め込みチップ集積を容易にするチップ取り付け接着剤、並びに関連するシステム及び方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8604612B2 (ja) |
EP (1) | EP2221860A3 (ja) |
JP (1) | JP5580617B2 (ja) |
CN (1) | CN101819939B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110318882A1 (en) * | 2010-06-24 | 2011-12-29 | Xiaoming Wu | Method of restricting chip movement upon bonding to rigid substrate using spray coatable adhesive |
US9530526B2 (en) | 2012-04-17 | 2016-12-27 | Bwxt Mpower, Inc. | Riser transition element for compact nuclear reactor |
KR101366006B1 (ko) * | 2012-07-17 | 2014-02-24 | 한국과학기술원 | 전자패키징용 무플럭스 접속부재와 이의 제조방법 |
CN103730381A (zh) * | 2013-12-16 | 2014-04-16 | 上海凯虹科技电子有限公司 | 芯片封装方法 |
KR101595696B1 (ko) * | 2015-04-02 | 2016-02-19 | 주식회사 이녹스 | 비전도성 접착필름용 조성물 및 이를 포함하는 비전도성 접착필름 |
US9926476B2 (en) * | 2016-04-22 | 2018-03-27 | Addison Clear Wave Coatings Inc. | Dual cure epoxy adhesives |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU4608972A (en) * | 1971-09-16 | 1974-03-07 | Ciba-Geigy Ag | New polyepoxide-polysiloxane compounds processes for their manufacture and their use |
JPS6451422A (en) | 1987-08-21 | 1989-02-27 | Toyo Boseki | Curable resin composition |
US5089440A (en) * | 1990-03-14 | 1992-02-18 | International Business Machines Corporation | Solder interconnection structure and process for making |
JPH04234422A (ja) * | 1990-10-31 | 1992-08-24 | Internatl Business Mach Corp <Ibm> | 二重硬化エポキシバックシール処方物 |
US5169911A (en) | 1992-02-18 | 1992-12-08 | General Electric Company | Heat curable blends of silicone polymide and epoxy resin |
US5262280A (en) | 1992-04-02 | 1993-11-16 | Shipley Company Inc. | Radiation sensitive compositions |
US5654081A (en) * | 1995-07-05 | 1997-08-05 | Ford Motor Company | Integrated circuit assembly with polymeric underfill body |
US5863970A (en) * | 1995-12-06 | 1999-01-26 | Polyset Company, Inc. | Epoxy resin composition with cycloaliphatic epoxy-functional siloxane |
DE19736471A1 (de) | 1997-08-21 | 1999-02-25 | Espe Dental Ag | Lichtinduziert kationisch härtende Zusammensetzungen und deren Verwendung |
JP4572006B2 (ja) * | 1998-12-08 | 2010-10-27 | 日東電工株式会社 | 粘着剤組成物およびその製造方法と粘着シ―ト類 |
CN100357382C (zh) * | 1999-02-08 | 2007-12-26 | 日立化成工业株式会社 | 用于电路连接的粘合剂、电极连接构造及电极连接方法 |
US6255137B1 (en) | 1999-07-01 | 2001-07-03 | Lockheed Martin Corp. | Method for making air pockets in an HDI context |
US6949297B2 (en) * | 2001-11-02 | 2005-09-27 | 3M Innovative Properties Company | Hybrid adhesives, articles, and methods |
JP4380127B2 (ja) * | 2002-03-28 | 2009-12-09 | 住友化学株式会社 | 熱硬化性樹脂組成物及び接着性フィルム |
TWI432904B (zh) * | 2006-01-25 | 2014-04-01 | Dow Corning | 用於微影技術之環氧樹脂調配物 |
US20070213429A1 (en) * | 2006-03-10 | 2007-09-13 | Chih-Min Cheng | Anisotropic conductive adhesive |
US7632425B1 (en) * | 2006-10-06 | 2009-12-15 | General Electric Company | Composition and associated method |
US7598610B2 (en) * | 2007-01-04 | 2009-10-06 | Phoenix Precision Technology Corporation | Plate structure having chip embedded therein and the manufacturing method of the same |
US20080318413A1 (en) * | 2007-06-21 | 2008-12-25 | General Electric Company | Method for making an interconnect structure and interconnect component recovery process |
-
2009
- 2009-02-19 US US12/389,060 patent/US8604612B2/en active Active
-
2010
- 2010-02-05 EP EP10152745.5A patent/EP2221860A3/en not_active Ceased
- 2010-02-17 JP JP2010031906A patent/JP5580617B2/ja active Active
- 2010-02-20 CN CN201010127866.0A patent/CN101819939B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010192900A (ja) | 2010-09-02 |
EP2221860A3 (en) | 2013-10-02 |
US8604612B2 (en) | 2013-12-10 |
CN101819939A (zh) | 2010-09-01 |
CN101819939B (zh) | 2015-06-24 |
US20100207261A1 (en) | 2010-08-19 |
EP2221860A2 (en) | 2010-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5580617B2 (ja) | 埋め込みチップ集積を容易にするチップ取り付け接着剤、並びに関連するシステム及び方法 | |
KR930010063B1 (ko) | 다층배선기판 및 그 제조 방법 | |
JP4282417B2 (ja) | 接続構造体 | |
US8080447B2 (en) | Method of manufacturing semiconductor device including exposing a dicing line on a wafer | |
JP2003152002A (ja) | 電子デバイス及び電子デバイス封止方法及び電子デバイス接続方法 | |
US8642390B2 (en) | Tape residue-free bump area after wafer back grinding | |
JP4466397B2 (ja) | 半導体用接着フィルム及びこれを用いた半導体装置 | |
TW201034094A (en) | Method for manufacturing semiconductor package, method for encapsulating semiconductor, and solvent-borne semiconductor encapsulating epoxy resin composition | |
JP2003007922A (ja) | 回路装置の製造方法 | |
Kikuchi et al. | Warpage analysis with newly molding material of fan-out panel level packaging and the board level reliability test results | |
JP5433923B2 (ja) | スティフナ付き基板およびその製造方法 | |
JP2003142529A (ja) | 接着フィルム、それを用いた半導体パッケージまたは半導体装置、および半導体パッケージまたは半導体装置の製造方法 | |
TWI397136B (zh) | Cof用積層板及cof薄膜載帶以及電子裝置 | |
JPH04369898A (ja) | 多層配線基板及びその製造方法 | |
JP2014146638A (ja) | 半導体装置の製造方法 | |
JP4605176B2 (ja) | 半導体搭載基板及び半導体パッケージの製造方法並びに半導体パッケージ | |
JP5292848B2 (ja) | 部品内蔵基板及びその製造方法 | |
JP4103482B2 (ja) | 半導体搭載基板とそれを用いた半導体パッケージ並びにそれらの製造方法 | |
JP2003231876A (ja) | 接着フィルムおよびこれを用いた半導体パッケージならびに半導体装置 | |
CN112154537A (zh) | 用于制造半导体封装的方法 | |
JP4605177B2 (ja) | 半導体搭載基板 | |
JP2004244486A (ja) | 接着フィルムおよびこれを用いた半導体パッケージならびに半導体装置 | |
JP3326372B2 (ja) | 電子部品用接着剤および電子部品用接着テープ | |
JP2000312068A (ja) | 配線基板およびその製造方法 | |
JP4168456B2 (ja) | Tabテープの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130207 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130716 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131011 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140617 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140711 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5580617 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |