JP5575771B2 - エッチングによる薄層ソーラーモジュールの端部除去 - Google Patents

エッチングによる薄層ソーラーモジュールの端部除去 Download PDF

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Publication number
JP5575771B2
JP5575771B2 JP2011524220A JP2011524220A JP5575771B2 JP 5575771 B2 JP5575771 B2 JP 5575771B2 JP 2011524220 A JP2011524220 A JP 2011524220A JP 2011524220 A JP2011524220 A JP 2011524220A JP 5575771 B2 JP5575771 B2 JP 5575771B2
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Prior art keywords
paste
etching
layer
layers
zinc oxide
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Expired - Fee Related
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JP2011524220A
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Japanese (ja)
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JP2012501530A (ja
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ドル，オリヴァー
ケーラー，インゴ
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Merck Patent GmbH
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Merck Patent GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Cleaning In General (AREA)
JP2011524220A 2008-09-01 2009-08-05 エッチングによる薄層ソーラーモジュールの端部除去 Expired - Fee Related JP5575771B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08015378 2008-09-01
EP08015378.6 2008-09-01
PCT/EP2009/005653 WO2010022849A2 (de) 2008-09-01 2009-08-05 Randentschichtung von dünnschicht-solar-modulen mittels ätzen

Publications (2)

Publication Number Publication Date
JP2012501530A JP2012501530A (ja) 2012-01-19
JP5575771B2 true JP5575771B2 (ja) 2014-08-20

Family

ID=41722001

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JP2011524220A Expired - Fee Related JP5575771B2 (ja) 2008-09-01 2009-08-05 エッチングによる薄層ソーラーモジュールの端部除去

Country Status (8)

Country Link
US (1) US8497215B2 (de)
EP (1) EP2345091B1 (de)
JP (1) JP5575771B2 (de)
KR (1) KR20110093759A (de)
CN (1) CN102138214B (de)
MY (1) MY152748A (de)
TW (1) TWI470813B (de)
WO (1) WO2010022849A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009028762A1 (de) * 2009-08-20 2011-03-03 Rena Gmbh Verfahren zum Ätzen von Siliziumoberflächen
KR101265197B1 (ko) * 2010-11-25 2013-05-27 삼성에스디아이 주식회사 리튬 이차 전지용 양극 활물질, 이의 제조 방법 및 이를 포함하는 리튬 이차 전지
EP2587564A1 (de) * 2011-10-27 2013-05-01 Merck Patent GmbH Selektives Ätzen einer Matrix, die Silber-Nanodrähte oder Kohlenstoffnanoröhrchen umfasst
CN102527676B (zh) * 2011-12-14 2013-11-06 青岛吉阳新能源有限公司 一种用于抗腐蚀掩膜浆料的清洗工艺方法
CN102800380A (zh) * 2012-08-21 2012-11-28 海南汉能光伏有限公司 浆料及其制备方法、太阳能电池边缘膜层的去除方法
JP6369460B2 (ja) * 2013-05-31 2018-08-08 日立化成株式会社 エッチング組成物
JP6454605B2 (ja) 2015-06-01 2019-01-16 東芝メモリ株式会社 基板処理方法および基板処理装置
CN106816493A (zh) * 2015-12-02 2017-06-09 钧石(中国)能源有限公司 一种异质结太阳能电池边缘绝缘方法
CN108987528A (zh) * 2017-06-01 2018-12-11 福建金石能源有限公司 一种异质结太阳能电池边缘绝缘方法
DE102017116419A1 (de) * 2017-07-20 2019-01-24 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung von PERT Solarzellen
CN112430815B (zh) * 2020-11-23 2023-06-30 南通卓力达金属科技有限公司 一种蚀刻液及其制备方法和应用
JP2023109710A (ja) * 2022-01-27 2023-08-08 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法

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GB1279834A (en) * 1968-10-07 1972-06-28 Chugai Kasei Co Ltd Improvements in metal cleaning and etching compositions
GB2127354B (en) * 1982-09-23 1985-12-04 James Michael Kape Process and composition for preparing aluminum alloy surfaces for anodizing
US5538600A (en) * 1994-07-27 1996-07-23 Aluminum Company Of America Method for desmutting aluminum alloys having a highly-reflective surface
AU731869B2 (en) 1998-11-12 2001-04-05 Kaneka Corporation Solar cell module
JP2000150944A (ja) * 1998-11-12 2000-05-30 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュール
DE69907866T2 (de) 1999-03-25 2004-03-11 Kaneka Corp. Verfahren zum Herstellen von Dünnschicht-Solarzellen-Modulen
JP4440389B2 (ja) * 1999-03-25 2010-03-24 株式会社カネカ 薄膜太陽電池モジュールの製造方法
JP2001111079A (ja) * 1999-10-13 2001-04-20 Kanegafuchi Chem Ind Co Ltd 光電変換装置の製造方法
EP1276701B1 (de) * 2000-04-28 2012-12-05 Merck Patent GmbH Ätzpasten für anorganische oberflächen
JP2002353481A (ja) * 2001-05-30 2002-12-06 Canon Inc 光起電力素子及びその製造方法
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
DE10239656A1 (de) * 2002-08-26 2004-03-11 Merck Patent Gmbh Ätzpasten für Titanoxid-Oberflächen
US20050167005A1 (en) * 2004-01-30 2005-08-04 Star Finishes, Inc. Pretreatment of aluminum surfaces
TWI283442B (en) * 2004-09-09 2007-07-01 Sez Ag Method for selective etching
DE102005007743A1 (de) 2005-01-11 2006-07-20 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten
DE102005033724A1 (de) * 2005-07-15 2007-01-18 Merck Patent Gmbh Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten
JP4762100B2 (ja) 2006-09-28 2011-08-31 三洋電機株式会社 太陽電池モジュール
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Also Published As

Publication number Publication date
TW201025639A (en) 2010-07-01
EP2345091A2 (de) 2011-07-20
WO2010022849A3 (de) 2010-10-21
JP2012501530A (ja) 2012-01-19
MY152748A (en) 2014-11-28
US8497215B2 (en) 2013-07-30
US20110159636A1 (en) 2011-06-30
CN102138214B (zh) 2014-06-04
CN102138214A (zh) 2011-07-27
TWI470813B (zh) 2015-01-21
EP2345091B1 (de) 2015-12-16
WO2010022849A2 (de) 2010-03-04
WO2010022849A8 (de) 2011-06-09
KR20110093759A (ko) 2011-08-18

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