WO2022262340A1 - 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用 - Google Patents

一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用 Download PDF

Info

Publication number
WO2022262340A1
WO2022262340A1 PCT/CN2022/081379 CN2022081379W WO2022262340A1 WO 2022262340 A1 WO2022262340 A1 WO 2022262340A1 CN 2022081379 W CN2022081379 W CN 2022081379W WO 2022262340 A1 WO2022262340 A1 WO 2022262340A1
Authority
WO
WIPO (PCT)
Prior art keywords
polysilicon
alkali
solution
alkali corrosion
plating
Prior art date
Application number
PCT/CN2022/081379
Other languages
English (en)
French (fr)
Inventor
邓雨微
裴银强
陈培良
Original Assignee
常州时创能源股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 常州时创能源股份有限公司 filed Critical 常州时创能源股份有限公司
Publication of WO2022262340A1 publication Critical patent/WO2022262340A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of photovoltaics, in particular to an alkali corrosion auxiliary agent for cleaning polycrystalline silicon and its application.
  • TOPCon Tel Oxide Passivated Contact
  • This technology prepares an ultra-thin (about 1-2nm) tunneling oxide layer on the back of the cell, and then deposits a 20nm-thick phosphorous-doped contact layer.
  • the heterogeneous amorphous silicon layer is formed into doped polysilicon after high-temperature annealing, and the two together form a passivation contact structure. Because the oxide layer is very thin and the silicon thin layer is doped, many carriers can penetrate the two passivation layers, while the minority carriers are blocked. If metal is deposited on it, passivation contacts without openings can be obtained.
  • TMAH tetramethylhydrogen ammonia
  • the present invention provides an alkali corrosion auxiliary agent for cleaning polycrystalline silicon and its application, specifically as follows.
  • the invention provides an alkali corrosion auxiliary agent for cleaning and plating polysilicon, the mass percentage of each component of which is:
  • the balance is deionized water.
  • the polyether is selected from one or more of polyperfluoromethyl isopropyl ether, polyoxyethylene nonylphenol phosphate, and polyether-modified silicone oil.
  • the anionic surfactant is selected from one or more of sodium dodecylbenzenesulfonate, sodium cocoyl methyl taurate, and sodium ⁇ -alkenylsulfonate.
  • the dispersant is selected from one or more of sodium lignosulfonate, 2-naphthalenesulfonic acid, and sodium polyacrylate.
  • the present invention also provides an alkali etching solution for cleaning polysilicon around and plating, which contains an alkali solution and the above-mentioned alkali corrosion auxiliary agent, the mass ratio of the alkali corrosion auxiliary agent to the alkali solution is 2.5 to 5:100, and the alkali solution For KOH solution or NaOH solution.
  • the mass percentage of KOH in the KOH solution is 0.5%-1.5%; the mass percentage of NaOH in the NaOH solution is 0.5%-1.5%.
  • the present invention also provides a method for cleaning polycrystalline silicon wrapping.
  • the silicon chip is immersed in the above alkali etching solution for 150-250 seconds, and the temperature of the alkali etching solution is controlled at 80-88°C.
  • the present invention also provides a method for preparing a TOPCon battery, which includes the step of removing the polysilicon coating.
  • the polysilicon coating method is used to remove the polysilicon coating.
  • the front side BSG of the silicon wafer is kept.
  • the preparation method of the TOPCon battery provided by the invention comprises the following steps:
  • the advantages and beneficial effects of the present invention are: provide an alkali corrosion auxiliary agent for cleaning polycrystalline silicon and its application, adopt the alkali etching solution mixed with the alkali corrosion auxiliary agent to remove polycrystalline silicon instead of acid corrosion or TMAH, and improve the The product yield reduces the chemical cost, and there is no environmental protection problem such as nitrogen discharge, and has no harm to the human body; the alkali corrosion auxiliary agent has selective adsorption and corrosion inhibition, and can corrode and remove the edge winding without destroying the pyramid structure. Polysilicon plating; the invention has a wide process window and stable efficiency, and can be applied to a variety of equipment. Both the slot machine and the chain machine can be used, and it is convenient for the production line to use existing machines to realize mass production.
  • the area around the front side of the silicon wafer that is coated with polysilicon is the area around the coating area, and the area other than the area around the front side of the silicon wafer is the area that is not the area around the coating area.
  • the polyether and anionic surfactants in the alkali corrosion auxiliary agent of the present invention can be selectively adsorbed on the non-wound plating area and form a dense cross-linked network structure to form a protective layer.
  • the protective layer can greatly reduce the alkali (KOH or NaOH) The diffusion rate of the surrounding plating area; and the present invention utilizes the dispersant in the alkali corrosion auxiliary agent to disperse and adsorb the difference between the polysilicon surrounding plating area and the non-circling plating area, which can increase the corrosion rate difference between the polycrystalline silicon surrounding plating area and the non-circling plating area.
  • the polysilicon in the surrounding plating area is etched away first, thereby protecting the pyramid tip, and the dispersant makes the reaction more uniform, ensuring the stability of mass production.
  • the present invention improves the yield rate of silicon wafers, and there will be no phenomenon of partial removal or excessive corrosion
  • the alkali corrosion auxiliary agent of the present invention widens the process window of inorganic alkali corrosion, and the efficiency is stable;
  • the present invention reduces chemical costs
  • the present invention does not have environmental protection problems such as nitrogen discharge, and the additive has no harm to the human body;
  • the present invention does not limit the equipment, both tank machines and chain machines are acceptable, as long as the alkali corrosion solution reacts positively with the silicon wafers, it is convenient for the production line to use existing machines.
  • Fig. 1 is the electron microscope picture after comparative example 1 cleans and surrounds the polycrystalline silicon
  • FIG. 2 is an electron microscope image of Comparative Example 2 after cleaning and plating polysilicon.
  • the invention provides an alkali corrosion auxiliary agent for cleaning and plating polysilicon.
  • the mass percent content of each component is: 2% to 5% polyether, 1% to 2.5% anionic surfactant, 1% to 2.5% % dispersant, the balance is deionized water; specifically:
  • the polyether is selected from one or more of polyperfluoromethyl isopropyl ether, polyoxyethylene nonylphenol phosphate, polyether modified silicone oil;
  • the anionic surfactant is selected from one or more of sodium dodecylbenzene sulfonate, sodium cocoyl methyl taurate, and sodium ⁇ -alkenyl sulfonate;
  • the dispersant is selected from one or more of sodium lignosulfonate, 2-naphthalenesulfonic acid and sodium polyacrylate.
  • the present invention also provides an alkaline etching solution for cleaning polysilicon around and plating, which contains an alkaline solution and the alkaline corrosion auxiliary agent of Example 1, the mass ratio of the alkaline corrosion auxiliary agent to the alkaline solution is 2.5 to 5:100, and the
  • the alkali solution is a KOH solution or a NaOH solution; the mass percentage of KOH in the KOH solution is 0.5%-1.5%; the mass percentage of NaOH in the NaOH solution is 0.5%-1.5%.
  • the present invention also provides a method for cleaning polycrystalline silicon wrapping.
  • the silicon chip is immersed in the alkali etching solution of the embodiment 2 for 150-250 seconds, and the temperature of the alkali etching solution is controlled at 80-88°C.
  • the present invention also provides a method for preparing a TOPCon battery, which includes the step of removing the polysilicon wrapping.
  • the method for cleaning the polysilicon wrapping in Example 3 is used to remove the polysilicon wrapping.
  • the front side BSG of the silicon wafer is kept.
  • the present invention provides a kind of preparation method of TOPCon battery, comprises the steps:
  • the alkali corrosion auxiliary agent, the mass percent content of each component is: 2% to 5% polyether, 1% to 2.5% anionic surfactant, 1% to 2.5% dispersant, and the balance is to Ionized water; specifically:
  • the polyether is selected from one or more of polyperfluoromethyl isopropyl ether, polyoxyethylene nonylphenol phosphate, polyether modified silicone oil;
  • the anionic surfactant is selected from one or more of sodium dodecylbenzene sulfonate, sodium cocoyl methyl taurate, and sodium ⁇ -alkenyl sulfonate;
  • the dispersant is selected from one or more of sodium lignosulfonate, 2-naphthalenesulfonic acid, and sodium polyacrylate;
  • the alkali corrosion solution contains an alkali solution and the above-mentioned alkali corrosion auxiliary agent, the mass ratio of the alkali corrosion auxiliary agent to the alkali solution is 2.5 to 5:100, and the alkali solution is a KOH solution or a NaOH solution; the KOH The mass percentage of KOH in the solution is 0.5% to 1.5%; the mass percentage of NaOH in the NaOH solution is 0.5% to 1.5%;
  • alkali solution and alkali corrosion auxiliary agent can be added according to the service life requirements
  • Soda ash solution NaOH solution with a mass concentration of 1.5%
  • Comparative example 1 only uses soda ash solution, the effect of cleaning and plating polysilicon is not good.
  • the sheet resistance difference is 5-10 ⁇ / ⁇ , and the silicon wafer reflectivity difference is 0.5-1.0%.
  • Alkali corrosion auxiliary agent prepare alkali corrosion with 5 parts by mass of polyperfluoromethyl isopropyl ether, 2.5 parts by mass of sodium cocoyl methyl taurate, 2.5 parts by mass of sodium lignosulfonate, and 90 parts by mass of deionized water Adjuvant;
  • Alkaline corrosion solution Add 5 parts by mass of alkali corrosion auxiliary agent to 100 parts by mass of NaOH solution (the mass concentration of NaOH is 1.5%);
  • Comparative Example 2 adopts the method of adding an alkali corrosion auxiliary agent in the soda ash solution, and the effect of cleaning the polysilicon plating is better. After cleaning, there is no polysilicon residue, and the pyramid shape remains intact, as shown in Figure 2; and the silicon wafer after the polysilicon plating is cleaned , The sheet resistance difference is 0.5 ⁇ 3.0 ⁇ / ⁇ , and the silicon wafer reflectivity difference is 0.1 ⁇ 0.3%.
  • the alkali corrosion auxiliary agent was prepared with 2 parts by mass of polyperfluoromethyl isopropyl ether, 2 parts by mass of sodium cocoyl methyl taurate, 1.5 parts by mass of sodium lignosulfonate, and 94.5 parts by mass of deionized water.
  • the alkali corrosion auxiliary agent was prepared with 2.5 parts by mass of polyoxyethylene nonylphenol phosphate, 1.5 parts by mass of sodium cocoyl methyl taurate, 1 part by mass of 2-naphthalenesulfonic acid, and 95 parts by mass of deionized water.
  • the alkali corrosion auxiliary agent was prepared with 4 parts by mass of polyether modified silicone oil, 2.5 parts by mass of sodium cocoyl methyl taurate, 1.5 parts by mass of sodium polyacrylate, and 92 parts by mass of deionized water.
  • the alkali corrosion auxiliary agent was prepared with 3.5 parts by mass of polyether-modified silicone oil, 2.5 parts by mass of sodium ⁇ -olefin sulfonate, 1 part by mass of sodium lignosulfonate, and 93 parts by mass of deionized water.
  • Comparative examples 3 to 12 also adopt the method of adding alkali corrosion auxiliary agent in the soda ash solution, and the effect of cleaning polysilicon around the plating is also better, there is no polysilicon residue after cleaning, and the pyramid shape remains intact. Comparative examples 3 to 12 are cleaned Electron micrographs after polysilicon plating are similar to those of Comparative Example 2, so they will not be provided one by one.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

本发明公开了一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用，碱腐蚀辅助剂中各组分的质量百分含量为：2%～5%的聚醚，1%～2.5%的阴离子表面活性剂，1%～2.5%分散剂，余量为去离子水。本发明采用配入了碱腐蚀辅助剂的碱腐蚀液去除绕镀多晶硅，代替酸腐蚀或TMAH，提高了产品良率降低了化学成本，且不存在氮排等环保问题，对人体无伤害；碱腐蚀辅助剂具有选择性吸附与缓蚀作用，可在保护金字塔结构不被破坏的情况下腐蚀去除边缘绕镀多晶硅；本发明工艺窗口宽、效率稳定，可适用于多种设备，槽式机、链式机均可使用，便于产线使用现有机台实现量产。

Description

一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用 技术领域
本发明涉及光伏领域，具体涉及一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用。
 背景技术
TOPCon（Tunnel Oxide Passivated Contact）为一种高效晶硅太阳能电池技术，该技术是在电池背面制备一层超薄（约1～2nm）的可隧穿氧化层，再沉积一层20nm厚的磷掺杂非晶硅层并经过高温退火后形成掺杂多晶硅，二者共同形成了钝化接触结构。由于氧化层很薄，硅薄层有掺杂，多子可以穿透这两层钝化层，而少子则被阻挡，如果在其上再沉积金属就可以得到无需开孔的钝化接触。然而此种电池在制造过程，涉及硅片背面镀上一层多晶硅（poly silicon）,在此一步骤中会产生绕镀现象，导致硅片正面边缘也镀上多晶硅而影响外观与效率，导致成品降级，为了解决此现象，业界最初使用高端仪器避免了绕镀问题，现部分厂研发使用以下三种化学腐蚀方法来解决绕镀问题：
1）采用酸腐蚀方式，使用氢氟酸与硝酸来移除正面绕镀的多晶硅，而此法窗口较窄，极易导致正面PN结受损而产品良率大幅下降；或是直接双面都镀上非晶硅，而解决正面非晶硅影响外观的问题仍然是用酸腐蚀方式来处理，此方法仍然窗口窄，容易破坏正面PN结而无法提升产品良率，且酸腐蚀也具有空污，氮排与化学成本较高等环保问题；
2）仅用无机碱氢氧化钾或氢氧化钠来移除正面绕镀的多晶硅，此方法需要前段工艺中的BSG做得足够厚才能保证移除正面绕镀的多晶硅时保留部分BSG，但此方法窗口较窄，量产时良率不高效率与良率波动大，且做厚BSG时会导致扩硼产能与电池效率较低；
3）用TMAH（四甲基氢氨）解决绕镀问题的方案，但TMAH属于神经毒素对人体有一定伤害且氮含量过高，用量较大，有氮排问题。
 技术解决方案
为解决现有技术的缺陷，本发明提供一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用，具体如下。
本发明提供一种清洗绕镀多晶硅的碱腐蚀辅助剂，其各组分的质量百分含量为：
2%～5%的聚醚，
1%～2.5%的阴离子表面活性剂，
1%～2.5%分散剂，
余量为去离子水。
优选的，所述聚醚选自聚全氟甲基异丙基醚、聚氧乙烯壬基酚磷酸酯、聚醚改性硅油中的一种或几种。
优选的，所述阴离子表面活性剂选自十二烷基苯磺酸钠、椰油酰基甲基牛磺酸钠、α-烯基磺酸钠中的一种或几种。
优选的，所述分散剂选自木质素磺酸钠、2-萘磺酸、聚丙烯酸钠中的一种或几种。
本发明还提供一种清洗绕镀多晶硅的碱腐蚀液，其含有碱溶液和上述的碱腐蚀辅助剂，所述碱腐蚀辅助剂与碱溶液的质量比为2.5～5:100，所述碱溶液为KOH溶液或NaOH溶液。
优选的，所述KOH溶液中KOH的质量百分含量为0.5%～1.5%；NaOH溶液中NaOH的质量百分含量为0.5%～1.5%。
本发明还提供一种清洗绕镀多晶硅的方法，将硅片浸入上述的碱腐蚀液中150～250S，且碱腐蚀液的温度控制在80～88℃。
本发明还提供一种TOPCon电池的制备方法，包括去除绕镀多晶硅的步骤，在去除多晶硅绕镀的步骤中，采用上述清洗绕镀多晶硅的方法去除绕镀多晶硅。
优选的，在去除多晶硅绕镀的步骤之前，保留硅片正面BSG。
更具体地，本发明提供的TOPCon电池的制备方法，包括如下步骤：
1）制绒；
2）硼扩散；
3）酸刻蚀；
4）LPCVD镀上氧化层和多晶硅，并完成扩磷；
5）镀背面氮化硅膜；
6）去除绕镀多晶硅；
7）镀正面氮化硅膜；
8）丝网烧结。
 有益效果
本发明的优点和有益效果在于：提供一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用，采用配入了碱腐蚀辅助剂的碱腐蚀液去除绕镀多晶硅，代替酸腐蚀或TMAH，提高了产品良率降低了化学成本，且不存在氮排等环保问题，对人体无伤害；碱腐蚀辅助剂具有选择性吸附与缓蚀作用，可在保护金字塔结构不被破坏的情况下腐蚀去除边缘绕镀多晶硅；本发明工艺窗口宽、效率稳定，可适用于多种设备，槽式机、链式机均可使用，便于产线使用现有机台实现量产。
以硅片正面绕镀有多晶硅的区域为绕镀区，以硅片正面绕镀区以外的区域为非绕镀区。本发明碱腐蚀辅助剂中的聚醚和阴离子表面活性剂能选择性吸附在非绕镀区上并形成致密交联网状结构进而形成保护层，保护层可大幅降低碱（KOH或NaOH）在非绕镀区的扩散速率；而且本发明利用碱腐蚀辅助剂中的分散剂在多晶硅绕镀区与非绕镀区分散吸附差异，可拉大多晶硅绕镀区与非绕镀区腐蚀速率差，在碱还未腐蚀到非绕镀区的硅时先将绕镀区的多晶硅腐蚀掉，进而保护了金字塔尖，且分散剂使得反应更均匀，保证量产的稳定性。
本发明具有如下特点：
1、本发明提高了硅片良率，不会出现部分移除不干净或过度腐蚀的现象；
2、本发明碱腐蚀辅助剂使无机碱腐蚀的工艺窗口变宽，效率稳定；
3、本发明降低了化学成本；
4、本发明不存在氮排等环保问题，添加剂对人体无伤害；
5、本发明不限制设备，槽式机、链式机均可，只要使碱腐蚀液与硅片正面反应，便于产线使用现有机台。
 附图说明
图1是对比例1清洗绕镀多晶硅后的电镜图；
图2是对比例2清洗绕镀多晶硅后的电镜图。
 本发明的最佳实施方式
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
本发明具体实施的技术方案如下：
实施例1
本发明提供一种清洗绕镀多晶硅的碱腐蚀辅助剂，其各组分的质量百分含量为：2%～5%的聚醚，1%～2.5%的阴离子表面活性剂，1%～2.5%分散剂，余量为去离子水；具体的：
所述聚醚选自聚全氟甲基异丙基醚、聚氧乙烯壬基酚磷酸酯、聚醚改性硅油中的一种或几种；
所述阴离子表面活性剂选自十二烷基苯磺酸钠、椰油酰基甲基牛磺酸钠、α-烯基磺酸钠中的一种或几种；
所述分散剂选自木质素磺酸钠、2-萘磺酸、聚丙烯酸钠中的一种或几种。
实施例2
本发明还提供一种清洗绕镀多晶硅的碱腐蚀液，其含有碱溶液和实施例1的碱腐蚀辅助剂，所述碱腐蚀辅助剂与碱溶液的质量比为2.5～5:100，所述碱溶液为KOH溶液或NaOH溶液；所述KOH溶液中KOH的质量百分含量为0.5%～1.5%；NaOH溶液中NaOH的质量百分含量为0.5%～1.5%。
实施例3
本发明还提供一种清洗绕镀多晶硅的方法，将硅片浸入实施例2的碱腐蚀液中150～250S，且碱腐蚀液的温度控制在80～88℃。
实施例4
本发明还提供一种TOPCon电池的制备方法，包括去除绕镀多晶硅的步骤，在去除多晶硅绕镀的步骤中，采用实施例3的清洗绕镀多晶硅的方法去除绕镀多晶硅。
实施例5
在实施例4的基础上，区别在于：
在去除多晶硅绕镀的步骤之前，保留硅片正面BSG。
实施例6
本发明提供一种TOPCon电池的制备方法，包括如下步骤：
1）制绒；
2）硼扩散；
3）酸刻蚀，采用HF+HNO 3；
4）LPCVD镀上镀上背面SiO 2与非晶硅（poly silicon），并完成扩磷，使非晶硅转变为多晶硅；
5）镀背面氮化硅膜；
6）去除绕镀多晶硅：
将硅片浸入配入了碱腐蚀辅助剂的碱腐蚀液中150～250S，且碱腐蚀液的温度控制在80～88℃；
所述碱腐蚀辅助剂，其各组分的质量百分含量为：2%～5%的聚醚，1%～2.5%的阴离子表面活性剂，1%～2.5%分散剂，余量为去离子水；具体的：
所述聚醚选自聚全氟甲基异丙基醚、聚氧乙烯壬基酚磷酸酯、聚醚改性硅油中的一种或几种；
所述阴离子表面活性剂选自十二烷基苯磺酸钠、椰油酰基甲基牛磺酸钠、α-烯基磺酸钠中的一种或几种；
所述分散剂选自木质素磺酸钠、2-萘磺酸、聚丙烯酸钠中的一种或几种；
所述碱腐蚀液，其含有碱溶液和上述碱腐蚀辅助剂，所述碱腐蚀辅助剂与碱溶液的质量比为2.5～5:100，所述碱溶液为KOH溶液或NaOH溶液；所述KOH溶液中KOH的质量百分含量为0.5%～1.5%；NaOH溶液中NaOH的质量百分含量为0.5%～1.5%；
量产时可依寿命要求，补加适量碱溶液和碱腐蚀辅助剂；
7）镀正面氮化硅膜；
8）丝网烧结。
为了检验本发明碱腐蚀辅助剂的功效，进行去除绕镀多晶硅的对比实验，具体如下：
对比例1
仅采用纯碱溶液清洗绕镀多晶硅：
纯碱溶液：质量浓度为1.5%的NaOH溶液；
将硅片浸入纯碱溶液中150S，且将溶液温度控制在85℃；
对比例1仅采用纯碱溶液，清洗绕镀多晶硅效果不佳，清洗后金字塔破坏严重，塔顶变平坦，无棱角，且表面绕镀清洗不干净，多晶硅残留，如图1所示；且清洗绕镀多晶硅后的硅片，方块电阻差值5～10Ω/♢，硅片反射率差值0.5～1.0%。
对比例2
采用配入了碱腐蚀辅助剂的碱腐蚀液，清洗绕镀多晶硅：
碱腐蚀辅助剂：以5质量份聚全氟甲基异丙基醚、2.5质量份椰油酰基甲基牛磺酸钠、2.5质量份木质素磺酸钠、90质量份去离子水配制碱腐蚀辅助剂；
碱腐蚀液：在100质量份的NaOH溶液（NaOH的质量浓度为1.5%）中配入5质量份的碱腐蚀辅助剂；
将硅片浸入纯碱溶液中150S，且将溶液温度控制在85℃；
对比例2采用纯碱溶液中添加碱腐蚀辅助剂的方法，清洗绕镀多晶硅效果较佳，清洗后无多晶硅残留，金字塔形貌保持完好，如图2所示；且清洗绕镀多晶硅后的硅片，方块电阻差值0.5～3.0Ω/♢，硅片反射率差值0.1～0.3%。
对比例3
在对比例2的基础上，区别在于：
以2质量份聚全氟甲基异丙基醚、2质量份椰油酰基甲基牛磺酸钠、1.5质量份木质素磺酸钠、94.5质量份去离子水配制碱腐蚀辅助剂。
对比例4
在对比例2的基础上，区别在于：
以3质量份聚全氟甲基异丙基醚、1质量份椰油酰基甲基牛磺酸钠、1质量份聚丙烯酸钠、95质量份去离子水配制碱腐蚀辅助剂。
对比例5
在对比例2的基础上，区别在于：
以2.5质量份聚氧乙烯壬基酚磷酸酯、1.5质量份椰油酰基甲基牛磺酸钠、1质量份2-萘磺酸、95质量份去离子水配制碱腐蚀辅助剂。
对比例6
在对比例2的基础上，区别在于：
以5质量份聚氧乙烯壬基酚磷酸酯、1质量份椰油酰基甲基牛磺酸钠、1质量份聚丙烯酸钠、93质量份去离子水配制碱腐蚀辅助剂。
对比例7
在对比例2的基础上，区别在于：
以3质量份聚醚改性硅油、2质量份椰油酰基甲基牛磺酸钠、1质量份木质素磺酸钠、94质量份去离子水配制碱腐蚀辅助剂。
对比例8
在对比例2的基础上，区别在于：
以4质量份聚醚改性硅油、2.5质量份椰油酰基甲基牛磺酸钠、1.5质量份聚丙烯酸钠、92质量份去离子水配制碱腐蚀辅助剂。
对比例9
在对比例2的基础上，区别在于：
以4.5质量份聚全氟甲基异丙基醚、1.5质量份十二烷基苯磺酸钠、1质量份木质素磺酸钠、93质量份去离子水配制碱腐蚀辅助剂。
对比例10
在对比例2的基础上，区别在于：
以3质量份聚全氟甲基异丙基醚、1.5质量份α-烯基磺酸钠、2.5质量份聚丙烯酸钠、93质量份去离子水配制碱腐蚀辅助剂。
对比例11
在对比例2的基础上，区别在于：
以3质量份聚醚改性硅油、2质量份十二烷基苯磺酸钠、1质量份2-萘磺酸、94质量份去离子水配制碱腐蚀辅助剂。
对比例12
在对比例2的基础上，区别在于：
以3.5质量份聚醚改性硅油、2.5质量份α-烯基磺酸钠、1质量份木质素磺酸钠、93质量份去离子水配制碱腐蚀辅助剂。
对比例3至对比例12也采用纯碱溶液中添加碱腐蚀辅助剂的方法，清洗绕镀多晶硅的效果也较佳，清洗后无多晶硅残留，金字塔形貌保持完好，对比例3至对比例12清洗绕镀多晶硅后的电镜图与对比例2的类似，就不再一一提供。
通过对比实验，可以证明本发明的碱腐蚀辅助剂有明显的功效。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 清洗绕镀多晶硅的碱腐蚀辅助剂，其特征在于，其各组分的质量百分含量为：
    2%～5%的聚醚，
    1%～2.5%的阴离子表面活性剂，
    1%～2.5%分散剂，
    余量为去离子水。
  2. 根据权利要求1所述的清洗绕镀多晶硅的碱腐蚀辅助剂，其特征在于，所述聚醚选自聚全氟甲基异丙基醚、聚氧乙烯壬基酚磷酸酯、聚醚改性硅油中的一种或几种。
  3. 根据权利要求1所述的清洗绕镀多晶硅的碱腐蚀辅助剂，其特征在于，所述阴离子表面活性剂选自十二烷基苯磺酸钠、椰油酰基甲基牛磺酸钠、α-烯基磺酸钠中的一种或几种。
  4. 根据权利要求1所述的清洗绕镀多晶硅的碱腐蚀辅助剂，其特征在于，所述分散剂选自木质素磺酸钠、2-萘磺酸、聚丙烯酸钠中的一种或几种。
  5. 清洗绕镀多晶硅的碱腐蚀液，其特征在于，其含有碱溶液和权利要求1至4中任一项所述的碱腐蚀辅助剂，所述碱腐蚀辅助剂与碱溶液的质量比为2.5～5:100，所述碱溶液为KOH溶液或NaOH溶液。
  6. 根据权利要求5所述的清洗绕镀多晶硅的碱腐蚀液，其特征在于，所述KOH溶液中KOH的质量百分含量为0.5%～1.5%；NaOH溶液中NaOH的质量百分含量为0.5%～1.5%。
  7. 清洗绕镀多晶硅的方法，其特征在于，将硅片浸入权利要求5或6所述的碱腐蚀液中150～250S，且碱腐蚀液的温度控制在80～88℃。
  8. TOPCon电池的制备方法，包括去除绕镀多晶硅的步骤，其特征在于，在去除多晶硅绕镀的步骤中，采用权利要求7所述的方法去除绕镀多晶硅。
  9. 根据权利要求8所述的TOPCon电池的制备方法，其特征在于，在去除多晶硅绕镀的步骤之前，保留硅片正面BSG。
  10. 根据权利要求8所述的TOPCon电池的制备方法，其特征在于，包括如下步骤：
    1）制绒；
    2）硼扩散；
    3）酸刻蚀；
    4）LPCVD镀上氧化层和多晶硅，并完成扩磷；
    5）镀背面氮化硅膜；
    6）去除绕镀多晶硅；
    7）镀正面氮化硅膜；
    8）丝网烧结。
PCT/CN2022/081379 2021-06-18 2022-03-17 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用 WO2022262340A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110679098.8 2021-06-18
CN202110679098.8A CN113416547B (zh) 2021-06-18 2021-06-18 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用

Publications (1)

Publication Number Publication Date
WO2022262340A1 true WO2022262340A1 (zh) 2022-12-22

Family

ID=77789152

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/081379 WO2022262340A1 (zh) 2021-06-18 2022-03-17 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用

Country Status (2)

Country Link
CN (1) CN113416547B (zh)
WO (1) WO2022262340A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116144365A (zh) * 2023-01-30 2023-05-23 江苏美阳电子材料有限公司 一种缓冲氧化腐蚀液及其制备方法和应用

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113416547B (zh) * 2021-06-18 2022-05-31 常州时创能源股份有限公司 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用
CN114133876B (zh) * 2021-11-04 2022-12-20 西安蓝桥新能源科技有限公司 一种小塔基硅片碱抛光辅助剂及其应用
CN114361290B (zh) * 2021-11-30 2022-07-15 嘉兴市小辰光伏科技有限公司 一种去除TOPCon电池制作的poly-Si绕镀的添加剂及其清洗工艺

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103614249A (zh) * 2013-12-03 2014-03-05 常州时创能源科技有限公司 一种用于多晶硅片酸制绒后的碱清洗添加剂及使用方法
CN103681958A (zh) * 2013-10-16 2014-03-26 常州时创能源科技有限公司 一种多晶硅片制绒方法
CN104562011A (zh) * 2013-10-09 2015-04-29 上海太阳能工程技术研究中心有限公司 多晶硅片的制绒辅助剂及制绒工艺
CN105177719A (zh) * 2015-08-25 2015-12-23 安徽飞阳能源科技有限公司 一种环保高效硅片制绒剂及其制备方法
CN106676636A (zh) * 2017-01-10 2017-05-17 何秀英 一种用于硅晶体表面织构化腐蚀的化学助剂
KR20180026855A (ko) * 2016-09-05 2018-03-14 동우 화인켐 주식회사 폴리실리콘 식각액 조성물 및 반도체 소자의 제조 방법
CN110416359A (zh) * 2019-07-19 2019-11-05 常州时创能源科技有限公司 一种TOPCon结构电池的制备方法
CN111785809A (zh) * 2020-07-15 2020-10-16 常州时创能源股份有限公司 钝化接触电池的制备方法
CN113416547A (zh) * 2021-06-18 2021-09-21 常州时创能源股份有限公司 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110257072A (zh) * 2019-06-13 2019-09-20 常州时创能源科技有限公司 硅片单面制绒与边缘刻蚀用添加剂及其应用
CN112812776A (zh) * 2019-11-15 2021-05-18 苏州阿特斯阳光电力科技有限公司 一种腐蚀液及其制备方法和应用
CN111524999A (zh) * 2020-04-03 2020-08-11 常州大学 一种遂穿氧化钝化电池的制备方法
CN111834493B (zh) * 2020-07-22 2022-08-05 常州时创能源股份有限公司 一种TOPCon太阳能电池的制备方法
CN111900214B (zh) * 2020-08-13 2022-02-18 晶科能源股份有限公司 去除多晶硅绕镀的方法、太阳能电池及其制备方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104562011A (zh) * 2013-10-09 2015-04-29 上海太阳能工程技术研究中心有限公司 多晶硅片的制绒辅助剂及制绒工艺
CN103681958A (zh) * 2013-10-16 2014-03-26 常州时创能源科技有限公司 一种多晶硅片制绒方法
CN103614249A (zh) * 2013-12-03 2014-03-05 常州时创能源科技有限公司 一种用于多晶硅片酸制绒后的碱清洗添加剂及使用方法
CN105177719A (zh) * 2015-08-25 2015-12-23 安徽飞阳能源科技有限公司 一种环保高效硅片制绒剂及其制备方法
KR20180026855A (ko) * 2016-09-05 2018-03-14 동우 화인켐 주식회사 폴리실리콘 식각액 조성물 및 반도체 소자의 제조 방법
CN106676636A (zh) * 2017-01-10 2017-05-17 何秀英 一种用于硅晶体表面织构化腐蚀的化学助剂
CN110416359A (zh) * 2019-07-19 2019-11-05 常州时创能源科技有限公司 一种TOPCon结构电池的制备方法
CN111785809A (zh) * 2020-07-15 2020-10-16 常州时创能源股份有限公司 钝化接触电池的制备方法
CN113416547A (zh) * 2021-06-18 2021-09-21 常州时创能源股份有限公司 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116144365A (zh) * 2023-01-30 2023-05-23 江苏美阳电子材料有限公司 一种缓冲氧化腐蚀液及其制备方法和应用
CN116144365B (zh) * 2023-01-30 2023-10-03 江苏美阳电子材料有限公司 一种缓冲氧化腐蚀液及其制备方法和应用

Also Published As

Publication number Publication date
CN113416547A (zh) 2021-09-21
CN113416547B (zh) 2022-05-31

Similar Documents

Publication Publication Date Title
WO2022262340A1 (zh) 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用
CN110518088B (zh) 一种se太阳能电池的制备方法
JP5535851B2 (ja) エッチングおよびドーピング複合物質
CN111900214B (zh) 去除多晶硅绕镀的方法、太阳能电池及其制备方法
CN107955974B (zh) 倒金字塔绒面单晶硅片的制绒添加剂及其应用
CN101777606B (zh) 一种晶体硅太阳电池选择性扩散工艺
KR20180129668A (ko) 헤테로 접합 태양광 전지의 제조방법 및 헤테로 접합 태양광 전지
CN113707761A (zh) 一种n型选择性发射极太阳能电池及其制备方法
CN111785809A (zh) 钝化接触电池的制备方法
CN104037257A (zh) 太阳能电池及其制造方法、单面抛光设备
CN111653650B (zh) 一种TOPCon电池生产片清洗参数优化及制备方法
WO2022016920A1 (zh) TOPCon 电池的制备方法
CN116936687B (zh) 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法
CN116741877A (zh) 一种tbc电池制备方法及tbc电池
CN114447142B (zh) 一种N型TOPCon太阳能电池及其制作方法
US20140166094A1 (en) Solar cell emitter region fabrication using etch resistant film
CN111446331A (zh) 一种去绕镀方法及钝化接触太阳能电池制备方法
CN110518075B (zh) 一种黑硅钝化膜、其制备方法及应用
CN103258728A (zh) 硅片刻蚀的方法及太阳能电池片的制作方法
WO2012162901A1 (zh) 背接触晶体硅太阳能电池片制造方法
CN102593241A (zh) 晶硅太阳能电池及晶硅太阳能电池边缘刻蚀的方法
US20120149144A1 (en) Method for manufacturing solar cell
CN111180544B (zh) 一种钝化接触晶体硅太阳能电池及其制作方法
CN103311093B (zh) Pn结构的掺杂方法
CN113363350B (zh) 一种ibc太阳能电池扩散和清洗方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22823831

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE