CN110416359A - 一种TOPCon结构电池的制备方法 - Google Patents
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Abstract
本发明公开了一种TOPCon结构电池的制备方法,在去除多晶硅绕镀的步骤之前,保留硅片正面BSG;在去除多晶硅绕镀的步骤中,通过配入了添加剂的碱溶液去除硅片正面的多晶硅;所述添加剂,其各组分的质量百分含量为:2%~5%的单硬脂酸甘油酯,1%~2.5%的二甘醇,1%~2.5%的月桂酸钠,1%~2%的β‑环糊精,余量为去离子水;所述碱溶液为KOH溶液或NaOH溶液。本发明通过配入了添加剂的碱溶液去除多晶硅绕镀,可保护BSG免受碱溶液腐蚀,进而使得碱无法腐蚀到扩磷处与扩硼处。本发明工艺窗口较宽、效率更稳定,可提高扩散产能,槽式机、链式机均可应用,便于产线使用现有机台实现量产。
Description
技术领域
本发明涉及一种TOPCon结构电池的制备方法。
背景技术
TOPCon(Tunnel Oxide Passivated Contact)结构电池是一种高效晶硅太阳能电池技术,该技术是在电池背面制备一层超薄的隧穿氧化层和一层高掺杂的多晶硅薄层,二者共同形成了钝化接触结构。
在TOPCon结构电池的制备过程中,需要在硅片背面镀上一层多晶硅(polysilicon),但此步骤会产生绕镀现象,导致硅片正面边缘也镀上多晶硅,会影响外观与效率,导致成品降级。
对于去除多晶硅绕镀,业界主要有三种解决方法:
1、采用氢氟酸和硝酸去除硅片正面绕镀的多晶硅,此方法的工艺窗口较窄,极易导致正面PN结受损,进而使产品良率大幅下降。
2、仅采用无机碱(氢氧化钾或氢氧化钠)去除硅片正面绕镀的多晶硅,此方法对BSG厚度有一定要求,在去除多晶硅绕镀时,无机碱会腐蚀BSG,只有BSG足够厚才能在去除多晶硅绕镀后保留部分BSG,故此方法的工艺窗口也较窄,量产时良率不高、效率与良率波动大,且做厚BSG会导致扩硼产能与电池效率较低。
3、采用TMAH(四甲基氢氨)去除硅片正面绕镀的多晶硅,此方法所用的TMAH属于神经毒素,对人体有一定伤害。
发明内容
本发明的目的在于提供一种TOPCon结构电池的制备方法,其通过配入了添加剂的碱溶液去除多晶硅绕镀,可保护BSG免受碱溶液腐蚀。
为实现上述目的,本发明的技术方案是设计一种TOPCon结构电池的制备方法,包括去除多晶硅绕镀的步骤;
在去除多晶硅绕镀的步骤之前,保留硅片正面BSG;
在去除多晶硅绕镀的步骤中,通过配入了添加剂的碱溶液去除硅片正面的多晶硅;
所述添加剂,其各组分的质量百分含量为:2%~5%的单硬脂酸甘油酯,1%~2.5%的二甘醇,1%~2.5%的月桂酸钠,1%~2%的β-环糊精,余量为去离子水;
所述碱溶液为KOH溶液或NaOH溶液。
优选的,所述KOH溶液中KOH的质量百分含量为1%~3%;NaOH溶液中NaOH的质量百分含量为1%~3%。
优选的,所述添加剂与碱溶液的质量比为0.5~3:100。
优选的,在去除多晶硅绕镀的步骤中,硅片浸入碱溶液中120~700S,且碱溶液的温度控制在60~85℃。
优选的,所述TOPCon结构电池的制备方法,其具体步骤包括:
1)制绒;
2)硼扩散;
3)酸刻蚀:对硅片背面进行单面酸清洗刻蚀,保留硅片正面BSG;
4)LPCVD镀上氧化层和多晶硅,并完成扩磷;
5)去除正面PSG;
6)去除正面多晶硅绕镀;
7)去除正面BSG和背面PSG;
8)镀正面和背面氮化硅膜;
9)丝印烧结。
本发明的优点和有益效果在于:提供一种TOPCon结构电池的制备方法,其通过配入了添加剂的碱溶液去除多晶硅绕镀,可保护BSG免受碱溶液腐蚀。
添加剂中的单硬脂酸甘油酯与β-环糊精能选择性吸附在BSG上并形成致密交联网状结构而形成保护层,可大幅降低碱(KOH或NaOH)在此保护层的扩散速率,避免碱与BSG反应,进而使得碱无法腐蚀到扩磷处与扩硼处,且二甘醇、月桂酸钠能使反应更均匀,保证量产的稳定性。
本发明工艺窗口较宽、效率更稳定,可提高扩散产能,槽式机、链式机均可应用,便于产线使用现有机台实现量产。
具体实施方式
下面结合实施例,对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
实施例1
一种TOPCon结构电池的制备方法,其具体步骤包括:
1)制绒;
2)硼扩散;
3)酸刻蚀:对硅片背面进行单面酸清洗刻蚀,保留硅片正面BSG;
4)LPCVD镀上氧化层和多晶硅,并完成扩磷;
5)去除正面PSG;
6)通过配入了添加剂的碱溶液去除硅片正面的多晶硅;
所述添加剂,其各组分的质量百分含量为:2%~5%的单硬脂酸甘油酯,1%~2.5%的二甘醇,1%~2.5%的月桂酸钠,1%~2%的β-环糊精,余量为去离子水;
所述碱溶液为KOH溶液;KOH溶液中KOH的质量百分含量为1%~3%;
所述添加剂与碱溶液的质量比为0.5~3:100;
硅片浸入碱溶液中120~700S,且碱溶液的温度控制在60~85℃;
经步骤6)处理后,硅片正面的多晶硅绕镀被去除,BSG完好,正面多晶硅色差处明显被移除干净;
7)去除正面BSG和背面PSG;
8)镀正面和背面氮化硅膜;
9)丝印烧结。
实施例2
在实施例1的基础上,区别在于:
步骤6)中,所述碱溶液为NaOH溶液;NaOH溶液中NaOH的质量百分含量为1%~3%。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (5)
1.一种TOPCon结构电池的制备方法,包括去除多晶硅绕镀的步骤,其特征在于:
在去除多晶硅绕镀的步骤之前,保留硅片正面BSG;
在去除多晶硅绕镀的步骤中,通过配入了添加剂的碱溶液去除硅片正面的多晶硅;
所述添加剂,其各组分的质量百分含量为:2%~5%的单硬脂酸甘油酯,1%~2.5%的二甘醇,1%~2.5%的月桂酸钠,1%~2%的β-环糊精,余量为去离子水;
所述碱溶液为KOH溶液或NaOH溶液。
2.根据权利要求1所述的TOPCon结构电池的制备方法,其特征在于,所述KOH溶液中KOH的质量百分含量为1%~3%;NaOH溶液中NaOH的质量百分含量为1%~3%。
3.根据权利要求2所述的TOPCon结构电池的制备方法,其特征在于,所述添加剂与碱溶液的质量比为0.5~3:100。
4.根据权利要求3所述的TOPCon结构电池的制备方法,其特征在于,在去除多晶硅绕镀的步骤中,硅片浸入碱溶液中120~700S,且碱溶液的温度控制在60~85℃。
5.根据权利要求4所述的TOPCon结构电池的制备方法,其特征在于,其具体步骤包括:
1)制绒;
2)硼扩散;
3)酸刻蚀:对硅片背面进行单面酸清洗刻蚀,保留硅片正面BSG;
4)LPCVD镀上氧化层和多晶硅,并完成扩磷;
5)去除正面PSG;
6)去除正面多晶硅绕镀;
7)去除正面BSG和背面PSG;
8)镀正面和背面氮化硅膜;
9)丝印烧结。
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Cited By (8)
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CN110931604A (zh) * | 2019-12-10 | 2020-03-27 | 江苏微导纳米科技股份有限公司 | Topcon结构太阳能电池的制备方法 |
CN111668345A (zh) * | 2020-06-29 | 2020-09-15 | 浙江晶科能源有限公司 | 一种太阳能电池及其制备方法 |
CN111785808A (zh) * | 2020-07-13 | 2020-10-16 | 常州时创能源股份有限公司 | 一种TOPCon电池绕镀多晶硅的去除方法及应用 |
CN111785809A (zh) * | 2020-07-15 | 2020-10-16 | 常州时创能源股份有限公司 | 钝化接触电池的制备方法 |
CN111900214A (zh) * | 2020-08-13 | 2020-11-06 | 晶科能源有限公司 | 去除多晶硅绕镀的方法、太阳能电池及其制备方法 |
CN112349584A (zh) * | 2020-10-26 | 2021-02-09 | 英利能源(中国)有限公司 | 一种用于TOPCon电池的去绕镀方法及TOPCon电池的制备方法 |
CN113416547A (zh) * | 2021-06-18 | 2021-09-21 | 常州时创能源股份有限公司 | 一种清洗绕镀多晶硅的碱腐蚀辅助剂及其应用 |
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