TWI470813B - 薄層太陽能模組利用蝕刻之邊緣剔除方法 - Google Patents
薄層太陽能模組利用蝕刻之邊緣剔除方法 Download PDFInfo
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本發明係關於一種快速且廉價之方法,其可局部地執行以藉由以下步驟利用濕式化學法剔除太陽能模組/電池之邊緣:施加適用於此目的之蝕刻膏,且當反應完全時,以適當方式移除蝕刻膏殘餘物或清潔基板表面。在該方法中採用一種為了達成該目的而新近開發之蝕刻膏。
薄層太陽能模組/電池之工業製造目前主要在可尤其為玻璃片、塑膠薄膜或薄片及/或鋼板之惰性(此處,大面積鋼片構成一例外)大面積載體材料2上進行。在該等惰性載體材料上全面積沈積功能性薄層(其界定稍後之太陽能模組/電池)之後及期間,宜將太陽能模組之功能活性層劃分為個別太陽能電池,其中載體材料保留於整個面積上。在下文中,術語「太陽能模組」與薄層太陽能模組及複數個電連接之薄層太陽能電池的排列作同義使用,一般用作所有光伏打組件之通用術語,該等光伏打組件一般由熟習此項技術者借助於術語「薄層光伏打」來理解。一種典型之「太陽能模組」係由薄功能層之堆疊建構而成,自基板4(諸如玻璃)起觀察,其具有以下細分部分(參見圖1):
a)(透明)電極6(諸如SnO2
或ITO);
b)以不同方式摻雜及視情況未經摻雜之半導體層及最終所謂之pin及nip結構;
c)另一(背面)電極8(諸如Ag)。
圖1展示所述太陽能模組之相應圖解結構。
圖2展示太陽能模組之囊封圖示,該太陽能模組之囊封如Hans-Wagemann與Heinz Eschrich在Photovoltaik
[Photovoltaics],第1版,2007,B. G. Teubner Verlag,Wiesbaden,Germany中所述及所示。
與大體如圖1及圖2中所示之該結構的偏差可能存在於各種情況下。
在構造化「太陽能模組」之後,必須密封及囊封未由載體材料定界之表面(亦即特徵在於沈積薄功能層之表面),因此以便保護其免受輕微的機械損傷且亦免受由於風化影響所致之化學物理侵蝕(參見圖2)。出於此目的,通常將有待密封之表面以相同大小及形狀之極具抗性之聚合物塗層10(諸如乙烯基塗層)、塑膠薄膜或玻璃片,或一連串複數個剛提及之元件覆蓋。藉助於黏著劑黏結利用多組分黏著劑及/或藉助於層壓使用適於此目的之聚合物使表面密封物黏結至太陽能模組邊緣處之載體材料。出於此目的,必須自所沈積之功能層堆疊去除載體材料之邊緣達約1至2公分,以便確保多層層壓件黏著至載體材料且同時保護「太陽能模組」免受可能會經由此邊緣位置作用於整個「太陽能模組」之化學物理影響。在進一步的內容中,術語「基板」應理解為意謂蝕刻膏所施加之系統。自功能層堆疊移除1至2公分寬之載體材料邊緣區域在下文中稱為「邊緣剔除」。
邊緣剔除目前在工業上係藉助於噴砂處理、使用旋轉研磨輪研磨邊緣區域及/或雷射系統來進行。
所有方法均具有如下之固有缺點:首先,由於噴砂處理以及所殘留之層堆疊部分殘餘物所致,整個模組表面被微粒雜質大面積污染;其次,在已移除邊緣之相鄰區域存在燒結現象。此外,雷射技術之特徵在於投資成本高。
因此,本發明之目的在於提供一種簡單、廉價且能避免上述缺點之方法。此外,本發明之目的在於提供為執行該方法所必需之組合物。
現已發現,現存問題可利用一種方法以簡單方式來解決,該方法可快速且廉價地執行以藉由以下步驟利用濕式化學法剔除「太陽能模組」之邊緣:施加適用於此目的之蝕刻膏,且當反應完全時,以適當方式移除蝕刻膏殘餘物或清潔基板表面。相應地,本發明同樣係關於可用於該方法之新穎膏。
此外,本發明係關於一種蝕刻膏,其可用於構造化(微)電子、光伏打及微機電(MEMS)組件中之矽及金屬層。就此而言,光伏打組件詳言之且較佳應理解為一般意謂薄層太陽能模組/電池及晶體太陽能電池。根據本發明,此等光伏打組件就此而言亦應理解為意謂有待構造化之薄層,其需經處理以用於製造該等組件,較佳為用於製造「太陽能模組」。
此處,舉例而言(但並不全面),可提及以下實例:具備及不具備交互數位化接觸結構之背接觸晶體太陽能電池;MWT、EWT、PERC、PERL及PERT太陽能電池;具備內埋接觸之太陽能電池;矽晶圓及太陽能電池之邊緣隔離;藉由單側蝕刻及後續拋光來處理之晶圓;薄層太陽能電池與薄層太陽能模組之分開及隔離;在製造「太陽能模組」及電池期間對通孔之蝕刻;在基於薄膜電晶體(TFT)、液晶(LCD)、電致發光(EL)、有機發光二極體(OLED)及接觸敏感性電容式及電阻式感應器之技術製造顯示器、通信及照明元件期間的構造化過程。
令人驚奇的是,已有可能開發出一種適於同時以單一步驟蝕刻功能層堆疊之膏狀蝕刻混合物。隨後,可以簡單方式自基板表面移除黏著的膏殘餘物,且可清潔「太陽能模組」之載體材料。以此種方式,有可能在不損傷直接鄰近於經膏濕潤之邊緣的鄰近區域內之功能薄層之情況下進行邊緣剔除。本發明之膏狀組合物有利的是本身具儲存穩定性,此意謂本發明之蝕刻膏無需進一步之防護措施即可被使用者使用。
因此,本發明係關於一種呈蝕刻膏形式之穩定膏狀蝕刻混合物,其可用於同時蝕刻上述功能層堆疊,其中有待蝕刻之層可由各種材料組成,諸如由經摻雜及未經摻雜之矽及金屬層及其衍生物組成。相應金屬層可由Al、Ag、Cu、Ni、Cr、Mo、Ta、Ti、W、Zn、Tix
Oy
、Tix
Wy
、Nix
Vy
、Tax
Ny
、Tix
Ny
組成。有待蝕刻之層亦可為氧化物或混合氧化物,諸如氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦(IO)、氧化鋅鋁(AZO)、氧化鋅(ZO)或類似氧化物。另一方面,有待蝕刻之層亦可為經摻雜及未經摻雜之半導體層,一般諸如c-Si、a-Si及μ-Si層、所謂的pin或nip層堆疊,或Ge及其合金之層,或GaAs及其三元與四元混合物之層,或III-IV及II-IV半導體之層[2]
。
儘管在各種情況中,僅有可能使用通常用於製造太陽能電池之方法中的蝕刻膏來選擇性地蝕刻特定層,但令人驚奇的是,亦有可能使用本發明之膏以單一步驟不僅蝕刻可能經摻雜之金屬層與半導體層,而且蝕刻上述氧化物及混合氧化物層。因此,有可能以有利方式使用本發明之蝕刻膏,用單一步驟移除「太陽能模組」之邊緣層。
為執行該方法,以熟習此項技術者已知之方式,較佳藉助於分配器來沈積蝕刻膏於「太陽能模組」之邊緣區域上,以便實現邊緣剔除之目的。為加速蝕刻過程,可視情況對具備蝕刻膏之基板進行活化及熱處理。升高之溫度不但會加快反應開始,而且會加速蝕刻介質之後續變乾及抑制。在熱處理期間,不應超過150℃之最高溫度。
蝕刻較佳在30℃至100℃範圍內之溫度下進行,隨後可進一步升高溫度,以便終止蝕刻操作且移除任何膏殘餘物。在一較佳程序中,在蝕刻步驟之後藉由洗滌或吹除且在100℃至145℃範圍內之高溫下乾燥來移除膏殘餘物。然而,在蝕刻後亦可直接緊隨洗滌步驟以便移除膏殘餘物。
此外,有可能(但並非必需)進行輕微蝕刻且因此使載體材料粗糙化,此使「太陽能模組」在機械上穩定。為了實現後續製造過程中所述之多層層壓件的黏著力增強以便達成囊封目的,此舉可為理想的。
膏殘餘物可藉助於熟習此項技術者已知之適當清潔方法自基板表面移除,諸如藉由利用壓縮空氣噴射器、加壓氣體噴射器、蒸汽噴射器或充滿水蒸氣或有機溶劑及其混合物之壓縮空氣噴射器,或利用加壓氣體噴射器、利用溶劑蒸氣、冷凍噴霧(例如於CO2
噴射器中之CO2
雪)噴射器、利用水、有機溶劑及含有水與不含水之有機溶劑混合物之聚焦噴射器來吹除。所有清潔溶液均可包含適於此目的之添加劑,該等添加劑在下文有更詳細的敍述。此外,基板表面可藉由通過清潔單元,藉助於區域選擇性(regiospecific)刷子及海綿清潔,使用水、有機溶劑、其混合物(包括及不包括水,且視情況包含其他添加劑,諸如界面活性劑、界面活性劑之混合物、錯合劑與螯合劑、發泡抑制劑及功能性鹽)來清潔。隨後可使用上述潤洗介質來進行後續細緻潤洗。
在此等清潔步驟之後,獲得經充分清潔之表面區域。若微量膏雜質殘留於表面上,則已發現其本身不會進一步損及使用上述囊封材料之「太陽能模組」之功能、應用、固化及/或層壓。
因此,本發明係關於一種呈蝕刻膏形式之穩定膏狀蝕刻混合物。該膏尤其適用於蝕刻以堆疊形式組裝之矽及金屬層,且因此極其適用於「太陽能模組」之邊緣剔除。
本發明之此等蝕刻膏可具有以下成份:水;及視情況選用之
有機溶劑與溶劑混合物;無機與有機氧化劑;無機與有機酸;聚合無機與有機增稠劑;膠凝劑、網絡形成劑與填充劑;搖變劑與流變改質劑;視情況選用之錯合劑與螯合劑;及掩蔽劑;視情況選用之表面活性物質及助流劑;及界面活性劑;視情況選用之除氣劑與消泡劑。
有機溶劑較佳為DMSO、NMP及其類似溶劑。此等溶劑可單獨使用及以混合物形式使用。
如上文所提及,本發明之蝕刻膏可包含氧化劑。較佳採用HNO3
、H2
O2
、NaO2
、KO2
、Na2
S2
O8
、(NH4
)2
S2
O8
、K2
S2
O8
、K5
H3
S4
O18
及無機過氧化合物(諸如NaBO2*
H2
O2
及[2 Na2
CO3*
3 H2
O2
])、HClO3
、NaClO3
、KClO3
、HBrO3
、NaBrO3
、KBrO3
、HIO3
、NaIO3
、KIO3
、KHIO6
、Cr2
O3
、NaCr2
O7
、K2
Cr2
O7
、KMnO4
、NaNO3
、KNO3
、NH4
NO3
、NaClO4
、HClO4
、硒酸鹽(SeO4 2-
)、CH3
CO3
H及有機過氧化合物、Ce(NO3
)4
、Ce(SO4
)2
、(NH4
)2
Ce(NO3
)6
及其類似物,以及其混合物。
可存在於本發明之膏中的無機與有機酸較佳為選自HNO3
、H3
PO4
、H2
SO4
、H2
SiF6
、HBF4
、H2
PF6
、H2
PO3
F、H2
PO2
F2
、HF、NH4
H2
F、HCOOH、CH3
COOH及C2
H5
COOH以及其混合物之群的酸。然而,亦可存在具有相同作用之酸。
此外,錯合劑與螯合劑可作為添加劑存在於膏中。較佳使用選自H3
PO4
、HF、NH4
F、NH4
HF2
、H2
SiF6
、HBF4
、H2
PO3
F、H2
PO2
F2
及Titriplex I-VIII之群的螯合劑。然而,其膦酸源性同系物(、)及其類似物亦可為合適的。此等錯合劑與螯合劑可個別地或以混合物形式添加至膏中。尤其較佳使用H3
PO4
、NH4
F、NH4
HF2
及類似化合物以及其混合物。
較佳之錯合劑與螯合劑尤其較佳係與選自HNO3
、H2
O2
、NaO2
、KO2
、Na2
S2
O8
、(NH4
)2
S2
O8
、K2
S2
O8
、K5
H3
S4
O18
之群的氧化劑一起用於本發明之組合物中。在該等氧化劑之群中,極其較佳者又為HNO3
及H2
O2
。
包含H3
PO4
、NH4
HF2
及HNO3
與其他添加劑(諸如增稠劑、交聯劑、界面活性劑及別的添加劑)之組合的組合物已經證實為特別有效的且特別穩定。H3
PO4
、NH4
HF2
及HNO3
按重量計係以7:1:1.5至10:1:3.5範圍內之混合比存在且該重量在各種情況下係與85% H3
PO4
及65% HNO3
有關的組合物又已經證實於此處為特別有利的。具有組合物之同步穩定性的特別良好之蝕刻結果已由H3
PO4
、NH4
HF2
及HNO3
按重量計係以7.5:1:1.8至9:1:3範圍內之混合比存在的組合物來獲得。
另外包含增稠劑(尤其為聚乙烯吡咯啶酮、聚乙酸乙烯酯及聚烯烴顆粒)之組合物已被證實特別穩定。包含上述重量比之H3
PO4
、NH4
HF2
及HNO3
以及適量之聚乙烯吡咯啶酮、聚烯烴顆粒及胺基官能化聚丙烯酸之組合物已經證實極其適用。
此外,可存在表面活性物質。此等表面活性物質較佳係選自陰離子、陽離子、非離子及兩性界面活性劑之群。此等表面活性物質可單獨存在或以混合物形式存在。
尤其較佳為諸如十二烷基硫酸鈉及脂肪醇乙氧基化物(諸如聚氰乙烯月桂基醚)及其混合物之界面活性劑。
辛醇、聚二甲基矽烷及具有相同作用之類似物質及其混合物可較佳作為除氣劑與消泡劑而存在。
為了達成本發明組合物之膏狀稠度,添加聚合無機與有機增稠劑、膠凝劑及網絡形成劑,諸如聚丙烯酸、聚丙烯酸酯、聚丙烯醯胺、纖維素醚(諸如甲基纖維素、羥乙基纖維素(HEC)、羥丙基纖維素及羧甲基纖維素)、聚乙烯吡咯啶酮(PVP)、聚乙酸乙烯酯、澱粉、(雜)多醣(諸如果膠、黃原膠、半乳甘露聚糖(carubin)、羅昔馬膠乳粉(Rhoximat)、阿拉伯膠、三仙膠、瓊脂糖及瓊脂)以及明膠與膨潤土。就邊緣剔除而言,可使用相應增稠劑係單獨存在或以混合物形式存在的蝕刻膏。
可用於蝕刻膏中之聚合無機與有機填充劑為經改質及未經改質之高度分散性熱解矽膠、焰黑(flame black)及石墨、塑性蠟及顆粒、玻璃珠及玻璃碎片、沸石、矽酸鋁、膨潤土及其類似物,以及其混合物。
本發明之蝕刻膏之簡單實施例較佳係由一種混合物組成,該混合物係由溶劑、氧化劑、無機酸、錯合劑或螯合劑以及增稠劑與填充劑組成,但其中並非所有上述組分都必須存在。
如上所述,由該組合物組成之蝕刻膏適用於以單一步驟蝕刻功能薄層之堆疊,其中該層堆疊可具有以下結構:載體材料/下部電極/以不同方式摻雜及未經摻雜之半導體層/上部電極。
必要時,該等蝕刻膏同時亦適用於載體材料之初期蝕刻及粗糙化。在特定情況下,載體材料可相當於下部電極。同時,在有待處理之「太陽能模組」的特定實施例中,上部電極可與下部電極相同。
下部電極又可為透明的且較佳由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦(IO)、氧化鋅鋁(AZO)、氧化鋅(ZO)或類似氧化物組成,而上部電極可較佳由Al、Ag、Cu、Ni、Cr、Mo、Ta、Ti、V、W及該等元素與其他合金成分(此處並未對其中一些作較詳細的說明)之合金、雙層與三層金屬層(其中單一層又包含至少一種來自所述之群之金屬及其合金)以及如上所述最終之氧化及混合氧化傳導性材料組成。
「太陽能模組」層結構中之經摻雜與未經摻雜半導體層較佳由經摻雜與未經摻雜之a-Si及μ-Si(p-i-n及n-i-p)組成,但不一定只限於所提及之該兩種材料,且亦可包含經摻雜與未經摻雜之晶體矽層。相應層另外可由Ge及其合金、GaAs及其三元與四元混合物組成或大體上由III-IV及II-IV半導體組成。
本發明之蝕刻膏有利地適用於以單個步驟澈底移除「太陽能模組」邊緣處之所有此等層直至載體層,而不在「太陽能模組」之剩餘有效表面上留下干擾污染物。
為執行蝕刻方法,在上述膏成分之基礎上調配的本發明之膏可藉助於網板印刷、模板印刷、分配操作、分配噴注或藉助於類似施加方法施加至且沈積於有待蝕刻之基板上。
本發明之膏使「太陽能模組」之邊緣能夠以簡單方式剔除。在為剔除邊緣而執行之蝕刻步驟之後所殘留的膏殘餘物可以簡單方式藉助於適當之清潔方法自表面移除,該清潔方法諸如藉由利用壓縮空氣噴射器、加壓氣體噴射器、蒸汽噴射器、充滿水蒸氣或充滿有機溶劑或其混合物之壓縮空氣或加壓氣體噴射器、溶劑蒸氣、冷凍噴霧(例如於CO2
氣體噴射器中之CO2
雪)之噴射器、水、有機溶劑及含有水與不含水之有機溶劑混合物之聚焦噴射器來吹除,其均包含較詳細地說明於下文之添加劑,且此外藉由通過一清潔單元,藉助於區域選擇性刷子及海綿清潔,使用水、有機溶劑、其混合物(包括及不包括水,且包含其他添加劑,諸如界面活性劑、界面活性劑之混合物、錯合劑與螯合劑、發泡抑制劑及功能性鹽)來清潔,且使用上述潤洗介質來進行後續細緻潤洗。
此外,已發現,根據本發明可用於邊緣剔除之蝕刻膏亦適用於構造化呈層及層堆疊形式之上述經摻雜或未經摻雜之透明氧化層或金屬層,以便達成構造化(微)電子、微機電及光伏打組件之目的。
本發明之蝕刻膏較佳適用於構造化具備及不具備交互數位化接觸結構之背接觸晶體太陽能電池;具備內埋接觸之太陽能電池;MWT、EWT、PERC、PERL及PERT太陽能電池;晶圓邊緣;且適用於晶體太陽能電池之邊緣隔離;適用於矽晶圓之單側蝕刻及拋光;適用於使薄層太陽能電池與薄層太陽能模組分開及隔離;適用於在製造薄層太陽能模組及電池期間對通孔之蝕刻;適用於在基於薄膜電晶體(TFT)、液晶(LCD)、電致發光(EL)、有機發光二極體(OLED)及接觸敏感性電容式及電阻式感應器之技術製造顯示器、通信及照明元件期間的構造化過程。
文獻:
[1]Hans-Wagemann,Heinz Eschrich,Photovoltaik
[Photovoltaics],第1版,2007,B. G. Teubner Verlag,Wiesbaden,Germany
[2]A. F., Halbleiter
[Etching Practice for Semiconductors],第1版,1967,Carl-Hanser-Verlag,,Germany。
為了更好地理解及說明本發明,提供以下屬於本發明之保護範疇的實例。該等實例亦用於說明可能之變體。然而,由於所述發明原理之一般有效性,故該等實例不適合於使本申請案之保護範疇僅限於此等實例。
實例中給出之溫度通常以℃表示。此外,毋庸置疑,在發明內容中以及在實例中,組合物中各組分之添加量通常總計達100%。
由50.2g HNO3
(33%)、10.6g NH4
HF、4g三仙膠及10.6g異丙醇藉由在劇烈攪拌下相繼將各成分彼此混合來製備一種膏。
將該膏施加於由玻璃/AZO/aSi/Al製成之「太陽能模組」上。在加熱板上於100℃下蝕刻該層堆疊3分鐘。在120℃下乾燥該膏之後,藉助於壓縮空氣聚焦噴射器經2分鐘之過程吹除膏殘餘物。隨後量測所蝕刻之結構中兩點之間的傳導率,得知電阻大於30Mohm。
由170g H3
PO4
(85%)、20ml水、10ml HNO3
(65%)、20g聚乙烯吡咯啶酮、3g羥乙基纖維素、2.3g聚氧乙烯月桂基醚、3g聚氧乙烯硬脂醚及5.2g焰黑藉由在劇烈攪拌下相繼將各成分彼此混合來製備一種膏。
隨後,
a)將該膏施加於玻璃上之鋁層上且在60℃下蝕刻2分鐘且
b)將該膏施加於玻璃上之Mo/Al雙層上且在60℃下蝕刻10分鐘。
隨後藉助於水噴射器清洗掉膏殘餘物。在兩種情況下,均進行金屬層之構造化。隨後量測所蝕刻之結構中兩點之間的傳導率,得知電阻大於30Mohm。
由170g H3
PO4
(85%)、20g NH4
HF2
、20ml水、10ml HNO3
(65%)、20g聚乙烯吡咯啶酮、3g羥乙基纖維素、2.3g聚氧乙烯月桂基醚或3g聚氧乙烯硬脂醚及5.2g焰黑藉由在劇烈攪拌下相繼將各成分彼此混合來製備一種膏。
隨後,
a)將該膏施加於玻璃上之鋁層上且在60℃下進行蝕刻2分鐘且
b)將該膏施加於玻璃上之Mo/Al雙層上且在60℃下進行蝕刻10分鐘。
當完成蝕刻時,藉助於水噴射器清洗掉膏殘餘物。在兩種情況下,均進行金屬層之構造化。隨後量測所蝕刻之結構中兩點之間的傳導率,得知電阻大於30Mohm。
由50g H3
PO4
(85%)、6g NH4
HF2
、10ml HNO3
(65%)、5g聚乙烯吡咯啶酮、1g聚氧乙烯月桂基醚、1g聚氧乙烯硬脂醚及5g聚烯烴顆粒藉由在劇烈攪拌下相繼將各成分彼此混合來製備一種膏。
將該膏施加於由玻璃/AZO/aSi/Al製成之「太陽能模組」上,且在加熱板上於50℃下對該層堆疊進行蝕刻5分鐘。在120℃下乾燥該膏2分鐘之後,藉助於壓縮空氣聚焦噴射器吹除膏殘餘物。隨後量測所蝕刻之結構中兩點之間的傳導率,得知電阻大於30Mohm。
由50g H3
PO4
(85%)、6g NH4
HF2
、10ml HNO3
(65%)、5g聚乙烯吡咯啶酮及5g聚烯烴顆粒藉由在劇烈攪拌下相繼將各成分彼此混合來製備一種膏。
將該膏施加於由玻璃/AZO/aSi/Al製成之「太陽能模組」上。在加熱板上於50℃之溫度下溫熱以此種方式處理之「太陽能模組」5分鐘,且對該層堆疊進行蝕刻。在120℃下乾燥該膏2分鐘之後,藉助於壓縮空氣聚焦噴射器吹除膏殘餘物。
隨後量測所蝕刻之結構中兩點之間的傳導率,得知電阻大於30Mohm。
由50g 85% H3
PO4
、6g NH4
HF2
、10ml 65% HNO3
、3g聚乙烯吡咯啶酮、3g胺基官能化聚丙烯酸及6g聚烯烴顆粒藉由在劇烈攪拌下相繼將各成分彼此混合來製備一種膏。
將該膏施加於由玻璃/AZO/aSi/Al製成之「太陽能模組」上。在加熱板上於50℃之溫度下溫熱以此種方式處理之「太陽能模組」5分鐘,且對該層堆疊進行蝕刻。在120℃下乾燥該膏2分鐘之後,藉助於壓縮空氣聚焦噴射器吹除膏殘餘物。
隨後量測所蝕刻之結構中兩點之間的傳導率,得知電阻大於30Mohm。
2...大面積載體材料
4...基板
6...(透明)電極
8...(背面)電極
10...極具抗性之聚合物塗層
圖1展示所述太陽能模組之相應圖解結構。
圖2展示太陽能模組之囊封圖示,該太陽能模組之囊封如Hans-Wagemann與Heinz Eschrich在Photovoltaik
[Photovoltaics],第1版,2007,B. G. Teubner Verlag,Wiesbaden,Germany中所述及所示。
Claims (17)
- 一種以濕式化學法剔除太陽能電池之邊緣的方法,包括將蝕刻膏施加於太陽能電池基板表面之邊緣,且在反應完全後,移除該等膏殘餘物,並且視情況清潔該基板表面且加以乾燥,其中該蝕刻膏包含按重量計,比率範圍為7:1:1.5至10:1:3.5之85% H3 PO4 、NH4 HF2 及65% HNO3 。
- 如請求項1之方法,其中將該蝕刻膏以約1至2公分之寬度施加於該基板表面之邊緣。
- 如請求項1之方法,其中該基板表面包括以單一蝕刻步驟蝕刻之經摻雜及未經摻雜之半導體層。
- 如請求項3之方法,其中該經摻雜或未經摻雜之半導體層為晶體矽、a-Si、μ-Si(p-i-n及n-i-p)層、Ge、Ge合金、GaAs或其三元與四元混合物、III-IV及II-IV半導體、金屬、金屬合金及氧化物或混合氧化物。
- 如請求項4之方法,其中該金屬或金屬合金為Al、Ag、Cu、Ni、Cr、Mo、Ta、Ti、V、W、Zn、Tix Wy 、Nix Vy 、Tax Ny 或Tix Ny 。
- 如請求項4之方法,其中該氧化物或混合氧化物為氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦(IO)、氧化鋅鋁(AZO)或氧化鋅(ZO)。
- 如請求項1至6中任一項之方法,其中該蝕刻在30℃至100℃範圍內之溫度下進行。
- 如請求項1至6中任一項之方法,其中在該蝕刻步驟後, 藉由洗滌或吹除且在100℃至150℃範圍內之高溫下乾燥來移除該等膏殘餘物。
- 一種蝕刻膏組合物,其包含按重量計,比率範圍為7:1:1.5至10:1:3.5之85% H3 PO4 、NH4 HF2 及65% HNO3 。
- 如請求項9之組合物,其包含按重量計,比率範圍為7.5:1:1.8至9:1:3之85% H3 PO4 、NH4 HF2 及65% HNO3 。
- 如請求項9或10之組合物,其包含聚乙烯吡咯啶酮及聚烯烴顆粒作為增稠劑。
- 如請求項9或10之組合物,其包含聚乙烯吡咯啶酮、聚烯烴顆粒及胺基官能化聚丙烯酸。
- 一種用於太陽能模組之邊緣剔除之方法,其包括將如請求項9至12中任一項之膏組合物施加至該太陽能模組。
- 一種用於蝕刻經摻雜及未經摻雜之半導體層之方法,其包括將如請求項9至12中任一項之膏組合物施加至經摻雜及未經摻雜之半導體層。
- 如請求項14之方法,其中該經摻雜或未經摻雜之半導體層為晶體矽、a-Si、μ-Si(p-i-n及n-i-p)層、Ge、Ge合金、GaAs或其三元與四元混合物、III-IV及II-IV半導體、金屬、金屬合金及氧化物或混合氧化物。
- 如請求項15之方法,其中該金屬或金屬合金為Al、Ag、Cu、Ni、Cr、Mo、Ta、Ti、V、W、Zn、Tix Wy 、Nix Vy 、Tax Ny 或Tix Ny 。
- 如請求項15之方法,其中該氧化物或混合氧化物為氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦(IO)、氧化鋅鋁(AZO)或氧化鋅(ZO)。
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DE102006051952A1 (de) | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
JP5559956B2 (ja) * | 2007-03-15 | 2014-07-23 | 東進セミケム株式会社 | 薄膜トランジスタ液晶表示装置のエッチング液組成物 |
CN101768768B (zh) * | 2008-12-26 | 2012-01-25 | 比亚迪股份有限公司 | 一种铝合金无氰无镍电镀方法及其电镀产品 |
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2009
- 2009-08-05 KR KR1020117007540A patent/KR20110093759A/ko not_active Application Discontinuation
- 2009-08-05 US US13/061,274 patent/US8497215B2/en not_active Expired - Fee Related
- 2009-08-05 JP JP2011524220A patent/JP5575771B2/ja not_active Expired - Fee Related
- 2009-08-05 EP EP09777656.1A patent/EP2345091B1/de not_active Not-in-force
- 2009-08-05 CN CN200980133349.XA patent/CN102138214B/zh not_active Expired - Fee Related
- 2009-08-05 MY MYPI20110847 patent/MY152748A/en unknown
- 2009-08-05 WO PCT/EP2009/005653 patent/WO2010022849A2/de active Application Filing
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TW200712021A (en) * | 2005-07-15 | 2007-04-01 | Merck Patent Gmbh | Printable etching media for silicon dioxide and silicon nitride layers |
US20100319751A1 (en) * | 2008-01-30 | 2010-12-23 | Jason Day | Series interconnected thin-film photovoltaic module and method for preparation thereof |
Also Published As
Publication number | Publication date |
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TW201025639A (en) | 2010-07-01 |
EP2345091A2 (de) | 2011-07-20 |
CN102138214A (zh) | 2011-07-27 |
MY152748A (en) | 2014-11-28 |
WO2010022849A8 (de) | 2011-06-09 |
WO2010022849A2 (de) | 2010-03-04 |
US8497215B2 (en) | 2013-07-30 |
JP2012501530A (ja) | 2012-01-19 |
KR20110093759A (ko) | 2011-08-18 |
JP5575771B2 (ja) | 2014-08-20 |
US20110159636A1 (en) | 2011-06-30 |
EP2345091B1 (de) | 2015-12-16 |
WO2010022849A3 (de) | 2010-10-21 |
CN102138214B (zh) | 2014-06-04 |
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