JP5572623B2 - 基板処理チャンバを洗浄する方法 - Google Patents

基板処理チャンバを洗浄する方法 Download PDF

Info

Publication number
JP5572623B2
JP5572623B2 JP2011516399A JP2011516399A JP5572623B2 JP 5572623 B2 JP5572623 B2 JP 5572623B2 JP 2011516399 A JP2011516399 A JP 2011516399A JP 2011516399 A JP2011516399 A JP 2011516399A JP 5572623 B2 JP5572623 B2 JP 5572623B2
Authority
JP
Japan
Prior art keywords
processing chamber
chamber
substrate
processing
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011516399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011526077A5 (ko
JP2011526077A (ja
Inventor
サン， イン イー，
ケルヴィン チャン，
トーマス ノワック，
アレクサンドロス， ティー． デモス，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/178,523 external-priority patent/US20100018548A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011526077A publication Critical patent/JP2011526077A/ja
Publication of JP2011526077A5 publication Critical patent/JP2011526077A5/ja
Application granted granted Critical
Publication of JP5572623B2 publication Critical patent/JP5572623B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
JP2011516399A 2008-06-27 2009-06-04 基板処理チャンバを洗浄する方法 Expired - Fee Related JP5572623B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US7653708P 2008-06-27 2008-06-27
US61/076,537 2008-06-27
US12/178,523 2008-07-23
US12/178,523 US20100018548A1 (en) 2008-07-23 2008-07-23 Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance
PCT/US2009/046270 WO2009158169A1 (en) 2008-06-27 2009-06-04 Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance

Publications (3)

Publication Number Publication Date
JP2011526077A JP2011526077A (ja) 2011-09-29
JP2011526077A5 JP2011526077A5 (ko) 2012-07-19
JP5572623B2 true JP5572623B2 (ja) 2014-08-13

Family

ID=41444874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011516399A Expired - Fee Related JP5572623B2 (ja) 2008-06-27 2009-06-04 基板処理チャンバを洗浄する方法

Country Status (5)

Country Link
JP (1) JP5572623B2 (ko)
KR (1) KR101631586B1 (ko)
CN (1) CN102077316A (ko)
TW (1) TWI465298B (ko)
WO (1) WO2009158169A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101896607B1 (ko) * 2010-10-19 2018-09-07 어플라이드 머티어리얼스, 인코포레이티드 나노큐어 자외선 챔버용 석영 샤워헤드
TWI476144B (zh) * 2012-05-14 2015-03-11 Univ Nat Taiwan 週期性奈米孔洞狀結構陣列之製造方法及其用途
CN104916522B (zh) * 2014-03-10 2017-12-22 中芯国际集成电路制造(上海)有限公司 去除hasti制备过程中形成的残留颗粒的方法
JP7304768B2 (ja) * 2019-08-16 2023-07-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理装置の洗浄方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254689B1 (en) * 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
TW535222B (en) * 2002-06-11 2003-06-01 Toppoly Optoelectronics Corp Method for depositing thin film using plasma chemical vapor deposition
US6911233B2 (en) * 2002-08-08 2005-06-28 Toppoly Optoelectronics Corp. Method for depositing thin film using plasma chemical vapor deposition
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US7265061B1 (en) * 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
US20050161060A1 (en) * 2004-01-23 2005-07-28 Johnson Andrew D. Cleaning CVD chambers following deposition of porogen-containing materials
TWI424460B (zh) * 2004-06-18 2014-01-21 Axcelis Tech Inc 用於處理介電材料之設備及製程
US7709814B2 (en) * 2004-06-18 2010-05-04 Axcelis Technologies, Inc. Apparatus and process for treating dielectric materials
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20060249175A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US7909595B2 (en) * 2006-03-17 2011-03-22 Applied Materials, Inc. Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections
JP5258241B2 (ja) * 2006-09-19 2013-08-07 日本エー・エス・エム株式会社 Ｕｖ照射チャンバーをクリーニングする方法

Also Published As

Publication number Publication date
KR101631586B1 (ko) 2016-06-17
JP2011526077A (ja) 2011-09-29
TW201008671A (en) 2010-03-01
TWI465298B (zh) 2014-12-21
WO2009158169A1 (en) 2009-12-30
CN102077316A (zh) 2011-05-25
KR20110025227A (ko) 2011-03-09

Similar Documents

Publication Publication Date Title
US8702870B2 (en) Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance
JP5905476B2 (ja) Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド
KR101018965B1 (ko) 처리 챔버의 고효율 ｕｖ 클리닝
US7663121B2 (en) High efficiency UV curing system
JP5401551B2 (ja) 冷却ガス用の孔を有する紫外線リフレクタおよび方法
US8657961B2 (en) Method for UV based silylation chamber clean
KR20140110080A (ko) 열화를 방지하기 위해 ｕｖ 챔버 광학 컴포넌트들을 시즈닝하기 위한 방법
JP2012506622A5 (ko)
JP2014505996A (ja) Ｕｖチャンバ内におけるウエハ処理プロファイルを調節する方法および装置
TW201403711A (zh) 利用氣相化學暴露之低ｋ介電質損傷修復
US10373823B2 (en) Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials
TWI581331B (zh) 降低多孔低ｋ膜的介電常數之方法
JP5572623B2 (ja) 基板処理チャンバを洗浄する方法
US20140262037A1 (en) Transparent yttria coated quartz showerhead

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120601

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120601

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130205

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130501

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130510

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140318

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140509

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140603

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140630

R150 Certificate of patent or registration of utility model

Ref document number: 5572623

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees