JP5568612B2 - 超伝導材料の接合方法 - Google Patents
超伝導材料の接合方法 Download PDFInfo
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- JP5568612B2 JP5568612B2 JP2012198260A JP2012198260A JP5568612B2 JP 5568612 B2 JP5568612 B2 JP 5568612B2 JP 2012198260 A JP2012198260 A JP 2012198260A JP 2012198260 A JP2012198260 A JP 2012198260A JP 5568612 B2 JP5568612 B2 JP 5568612B2
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- superconducting material
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- microwave
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- 239000000463 material Substances 0.000 title claims description 125
- 238000000034 method Methods 0.000 title claims description 29
- 238000005304 joining Methods 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- -1 yttrium barium copper oxide compound Chemical class 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007735 ion beam assisted deposition Methods 0.000 description 2
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/341—Silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/82—Two substrates not completely covering each other, e.g. two plates in a staggered position
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
102 導波路素子
200 マイクロ波チャンバー
200a 上部構造
200b 下部構造
202 水晶板
204 O型リング
206 ネジ
207 温度センサ
210 第1収熱板
212 第1基板
214 第1超伝導材料
220 第2収熱板
222 第2基板
224 第2超伝導材料
250 ガス注入装置
252 酸素ガス
R 重複領域
I 長さ
Claims (6)
- マイクロ波チャンバーを提供し、そのうち、前記マイクロ波チャンバーが、第1収熱板と、前記第1収熱板に向かい合う第2収熱板とを有することと、
前記マイクロ波チャンバー内の前記第1収熱板と前記第2収熱板の間に、第1超伝導材料および第2超伝導材料を配置し、そのうち、前記第1超伝導材料および前記第2超伝導材料が、それらの間に重複領域を有するとともに、前記第1収熱板および前記第2収熱板に圧力が印加されることと、
前記マイクロ波チャンバーにマイクロ波電力を供給し、そのうち、前記第1収熱板および前記第2収熱板が、前記マイクロ波電力を熱エネルギーに変換して、前記第1超伝導材料と前記第2超伝導材料を前記重複領域で接合することと、
前記マイクロ波チャンバーに酸素ガスを流入することと、
を含み、
前記酸素ガスの前記流量が、300〜10000sccmの範囲内であって、
前記第1収熱板および前記第2収熱板が、それぞれ炭化ケイ素(Sic)、グラファイト、または活性炭を含む超伝導材料の接合方法。 - 前記第1超伝導材料および前記第2超伝導材料が、それぞれ、イットリウムバリウム銅酸化物化合物(YBa2Cu3O7-δ,YBCO)、ドープされたイットリウムバリウム銅酸化物化合物(YBa2Cu3-xMxO7-δまたはY1-xNxBa2Cu3O7-δ)、Bi2Sr2Ca2Cu3O10(BSCCO)、Tl2Ba2Ca2Cu3O10(TBCCO)、またはHg12Tl3Ba30Ca30Cu45O127(HBCCO)を含み、そのうち、Mが、Zn、Li、Ni、またはZrを示し、Nが、Ca、Zr、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、またはLuを示し、δが、0〜1を示す請求項1に記載の超伝導材料の接合方法。
- 前記第1超伝導材料の厚さおよび前記第2超伝導材料の厚さが、それぞれ0.1〜5μmの範囲内である請求項1または2に記載の超伝導材料の接合方法。
- 前記第1超伝導材料と前記第2超伝導材料の間の前記重複領域の長さが、0.5cmよりも大きいか、それに等しい請求項1乃至請求項3の何れか一項に記載の超伝導材料の接合方法。
- 前記第1超伝導材料が、第1基板に配置され、前記第2超伝導材料が、第2基板に配置される請求項1乃至請求項4の何れか一項に記載の超伝導材料の接合方法。
- 前記圧力が、1000kg/m2よりも大きい請求項1乃至請求項5の何れか一項に記載の超伝導材料の接合方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100147425A TWI458145B (zh) | 2011-12-20 | 2011-12-20 | 超導材料的接合方法 |
TW100147425 | 2011-12-20 |
Publications (2)
Publication Number | Publication Date |
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JP2013128984A JP2013128984A (ja) | 2013-07-04 |
JP5568612B2 true JP5568612B2 (ja) | 2014-08-06 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2012198260A Active JP5568612B2 (ja) | 2011-12-20 | 2012-09-10 | 超伝導材料の接合方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8808492B2 (ja) |
JP (1) | JP5568612B2 (ja) |
KR (1) | KR101379865B1 (ja) |
CN (1) | CN103178422B (ja) |
DE (1) | DE102012215291A1 (ja) |
TW (1) | TWI458145B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6108888B2 (ja) * | 2013-03-13 | 2017-04-05 | 古河電気工業株式会社 | ピーラブル超電導導体、ピーラブル超電導導体の製造方法及び超電導線の補修方法 |
KR101374212B1 (ko) * | 2013-08-16 | 2014-03-17 | 케이조인스(주) | ReBCO 고온 초전도 선재 접합 장치 및 이를 이용한 접합 방법 |
TWI488994B (zh) * | 2014-04-17 | 2015-06-21 | Ind Tech Res Inst | 超導薄膜的缺陷修補方法、鍍膜方法與以此方法製作的超導薄膜 |
PT3140019T (pt) * | 2014-05-09 | 2020-09-11 | Slab Dream Lab Llc | Placa de base para suportar blocos de construção de encaixe |
CN105390830B (zh) * | 2015-12-07 | 2017-11-17 | 清华大学深圳研究生院 | 实现稀土钡铜氧高温超导导线之间超导连接的方法及结构 |
CN107958839B (zh) * | 2016-10-18 | 2020-09-29 | 上海新昇半导体科技有限公司 | 晶圆键合方法及其键合装置 |
US11380461B2 (en) * | 2019-07-02 | 2022-07-05 | Northrop Grumman Systems Corporation | Superconducting flexible interconnecting cable connector |
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JPH0330265A (ja) | 1989-06-27 | 1991-02-08 | Agency Of Ind Science & Technol | 超電導セラミックスの異方性接合の方法 |
JPH05186219A (ja) | 1992-01-07 | 1993-07-27 | Fujitsu Ltd | 超伝導体薄膜の製造方法及び超伝導配線の製造方法 |
JPH0696828A (ja) * | 1992-01-27 | 1994-04-08 | Toshiba Corp | 酸化物超電導線の接続方法 |
JP2619804B2 (ja) | 1994-03-25 | 1997-06-11 | 株式会社超伝導センサ研究所 | ジョセフソン接合処理方法 |
JP2001155566A (ja) | 1999-12-01 | 2001-06-08 | Internatl Superconductivity Technology Center | 超電導体の接合方法及び超電導体接合部材 |
US6531233B1 (en) | 2000-05-04 | 2003-03-11 | Shahin Pourrahimi | Superconducting joint between multifilamentary superconducting wires |
KR100390880B1 (ko) * | 2000-12-30 | 2003-07-10 | 엘지마이크론 주식회사 | 열처리장치의 캐비티 |
CN1197829C (zh) * | 2001-06-29 | 2005-04-20 | 财团法人国际超电导产业技术研究中心 | 氧化物超导体的接合方法及氧化物超导体结合体 |
JP4301761B2 (ja) | 2002-03-08 | 2009-07-22 | 昌雄 本藤 | パルス通電による接合装置 |
JP4521693B2 (ja) | 2002-12-04 | 2010-08-11 | 住友電気工業株式会社 | 高温超電導厚膜部材およびその製造方法 |
CA2595607C (en) | 2005-01-25 | 2014-07-15 | Epix Delaware, Inc. | Substituted arylamine compounds and their use as 5-ht6 modulators |
JP2006216365A (ja) * | 2005-02-03 | 2006-08-17 | Sumitomo Electric Ind Ltd | 超電導薄膜材料、超電導線材およびこれらの製造方法 |
US7071148B1 (en) | 2005-04-08 | 2006-07-04 | Superpower, Inc. | Joined superconductive articles |
JP4744248B2 (ja) | 2005-05-30 | 2011-08-10 | 財団法人国際超電導産業技術研究センター | Re系酸化物超電導線材の接合方法 |
US8132746B2 (en) | 2007-04-17 | 2012-03-13 | Nanotek Instruments, Inc. | Low-temperature method of producing nano-scaled graphene platelets and their nanocomposites |
JP5156266B2 (ja) * | 2007-06-01 | 2013-03-06 | 龍彦 矢嶋 | 溶接装置および溶接方法 |
KR101024998B1 (ko) | 2008-11-26 | 2011-03-25 | 한국전기연구원 | 이동형 초전도 선재 접합장치 |
CN101719399B (zh) * | 2009-11-06 | 2011-06-15 | 北京工业大学 | 一种提高ybco超导薄膜生产效率及膜厚的制备工艺 |
-
2011
- 2011-12-20 TW TW100147425A patent/TWI458145B/zh active
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2012
- 2012-06-04 CN CN201210181157.XA patent/CN103178422B/zh active Active
- 2012-06-06 US US13/490,429 patent/US8808492B2/en active Active
- 2012-07-12 KR KR1020120075857A patent/KR101379865B1/ko active IP Right Grant
- 2012-08-29 DE DE102012215291A patent/DE102012215291A1/de not_active Withdrawn
- 2012-09-10 JP JP2012198260A patent/JP5568612B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TWI458145B (zh) | 2014-10-21 |
KR101379865B1 (ko) | 2014-04-01 |
TW201327954A (zh) | 2013-07-01 |
DE102012215291A1 (de) | 2013-06-20 |
KR20130071336A (ko) | 2013-06-28 |
CN103178422B (zh) | 2015-10-21 |
US20130157868A1 (en) | 2013-06-20 |
JP2013128984A (ja) | 2013-07-04 |
US8808492B2 (en) | 2014-08-19 |
CN103178422A (zh) | 2013-06-26 |
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