JP5562736B2 - セレンインク、並びにその製造方法および使用方法 - Google Patents

セレンインク、並びにその製造方法および使用方法 Download PDF

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Publication number
JP5562736B2
JP5562736B2 JP2010145545A JP2010145545A JP5562736B2 JP 5562736 B2 JP5562736 B2 JP 5562736B2 JP 2010145545 A JP2010145545 A JP 2010145545A JP 2010145545 A JP2010145545 A JP 2010145545A JP 5562736 B2 JP5562736 B2 JP 5562736B2
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JP
Japan
Prior art keywords
selenium
substrate
group
ink
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010145545A
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English (en)
Japanese (ja)
Other versions
JP2011029624A (ja
JP2011029624A5 (enExample
Inventor
デービッド・モズレー
ケビン・カルジア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2011029624A publication Critical patent/JP2011029624A/ja
Publication of JP2011029624A5 publication Critical patent/JP2011029624A5/ja
Application granted granted Critical
Publication of JP5562736B2 publication Critical patent/JP5562736B2/ja
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/02Printing inks
    • C09D11/03Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/30Inkjet printing inks
    • C09D11/32Inkjet printing inks characterised by colouring agents
    • C09D11/322Pigment inks
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/52Electrically conductive inks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02425Conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP2010145545A 2009-07-16 2010-06-25 セレンインク、並びにその製造方法および使用方法 Active JP5562736B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/504,062 2009-07-16
US12/504,062 US8277894B2 (en) 2009-07-16 2009-07-16 Selenium ink and methods of making and using same

Publications (3)

Publication Number Publication Date
JP2011029624A JP2011029624A (ja) 2011-02-10
JP2011029624A5 JP2011029624A5 (enExample) 2013-07-11
JP5562736B2 true JP5562736B2 (ja) 2014-07-30

Family

ID=42988329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010145545A Active JP5562736B2 (ja) 2009-07-16 2010-06-25 セレンインク、並びにその製造方法および使用方法

Country Status (6)

Country Link
US (1) US8277894B2 (enExample)
EP (1) EP2275496B1 (enExample)
JP (1) JP5562736B2 (enExample)
KR (1) KR101199032B1 (enExample)
CN (1) CN101956193B (enExample)
TW (1) TWI432532B (enExample)

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* Cited by examiner, † Cited by third party
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US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US9352003B1 (en) 2010-05-14 2016-05-31 Musculoskeletal Transplant Foundation Tissue-derived tissuegenic implants, and methods of fabricating and using same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
US8883550B2 (en) * 2010-09-15 2014-11-11 Precursor Energetics, Inc. Deposition processes for photovoltaic devices
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
US20130224901A1 (en) * 2012-02-26 2013-08-29 Jiaxiong Wang Production Line to Fabricate CIGS Thin Film Solar Cells via Roll-to-Roll Processes
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
WO2014042319A1 (ko) * 2012-09-17 2014-03-20 한국생산기술연구원 Cis/cgs/cigs 박막 제조방법 및 이를 이용하여 제조된 태양전지
US8809113B2 (en) * 2012-11-10 2014-08-19 Sharp Laboratories Of America, Inc. Solution-processed metal-selenide semiconductor using selenium nanoparticles
US9842733B2 (en) 2013-06-11 2017-12-12 Imec Vzw Method for dissolving chalcogen elements and metal chalcogenides in non-hazardous solvents
CN113366800B (zh) 2019-01-29 2024-10-22 谷歌有限责任公司 用具有不同长度的消息认证码的完整性保护
CN114590832B (zh) * 2022-03-04 2023-06-23 中国科学院合肥物质科学研究院 一种简便合成非化学计量比纳米硒化铜的方法

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US4520010A (en) * 1983-06-02 1985-05-28 Xerox Corporation Process for modifying the electrical properties of selenium, and selenium alloys
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
WO2001037324A1 (en) * 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
CN100490205C (zh) * 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7163835B2 (en) * 2003-09-26 2007-01-16 E. I. Du Pont De Nemours And Company Method for producing thin semiconductor films by deposition from solution
US20080124831A1 (en) * 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US20070166453A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
CA2573625A1 (en) * 2004-07-16 2006-08-17 Hexion Specialty Chemicals, Inc. Radiation curable inkjet inks, method of manufacture, and methods of use thereof
US7494841B2 (en) * 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US7968008B2 (en) * 2006-08-03 2011-06-28 Fry's Metals, Inc. Particles and inks and films using them
EP2101931B1 (en) 2006-11-09 2015-05-13 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
WO2008057119A1 (en) 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
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JP5137796B2 (ja) * 2008-11-26 2013-02-06 京セラ株式会社 化合物半導体薄膜の製法および薄膜太陽電池の製法
US20120060928A1 (en) * 2009-05-21 2012-03-15 E.I. Du Pont De Nemours And Company Processes for preparing copper tin sulfide and copper zinc tin sulfide films
US8700051B2 (en) * 2009-05-22 2014-04-15 Qualcomm Incorporated Positioning of a wireless device served by a femto cell

Also Published As

Publication number Publication date
CN101956193A (zh) 2011-01-26
TWI432532B (zh) 2014-04-01
TW201111450A (en) 2011-04-01
JP2011029624A (ja) 2011-02-10
KR20110007590A (ko) 2011-01-24
CN101956193B (zh) 2012-06-27
EP2275496A1 (en) 2011-01-19
EP2275496B1 (en) 2013-05-01
KR101199032B1 (ko) 2012-11-08
US20110014377A1 (en) 2011-01-20
US8277894B2 (en) 2012-10-02

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