CN101956193B - 硒油墨及其制备和使用方法 - Google Patents

硒油墨及其制备和使用方法 Download PDF

Info

Publication number
CN101956193B
CN101956193B CN2010102358272A CN201010235827A CN101956193B CN 101956193 B CN101956193 B CN 101956193B CN 2010102358272 A CN2010102358272 A CN 2010102358272A CN 201010235827 A CN201010235827 A CN 201010235827A CN 101956193 B CN101956193 B CN 101956193B
Authority
CN
China
Prior art keywords
selenium
group
ink
substrate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2010102358272A
Other languages
English (en)
Chinese (zh)
Other versions
CN101956193A (zh
Inventor
D·莫斯利
K·卡尔兹亚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of CN101956193A publication Critical patent/CN101956193A/zh
Application granted granted Critical
Publication of CN101956193B publication Critical patent/CN101956193B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/32—Inkjet printing inks characterised by colouring agents
    • C09D11/322—Pigment inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
CN2010102358272A 2009-07-16 2010-07-14 硒油墨及其制备和使用方法 Active CN101956193B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/504,062 US8277894B2 (en) 2009-07-16 2009-07-16 Selenium ink and methods of making and using same
US12/504,062 2009-07-16

Publications (2)

Publication Number Publication Date
CN101956193A CN101956193A (zh) 2011-01-26
CN101956193B true CN101956193B (zh) 2012-06-27

Family

ID=42988329

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010102358272A Active CN101956193B (zh) 2009-07-16 2010-07-14 硒油墨及其制备和使用方法

Country Status (6)

Country Link
US (1) US8277894B2 (enExample)
EP (1) EP2275496B1 (enExample)
JP (1) JP5562736B2 (enExample)
KR (1) KR101199032B1 (enExample)
CN (1) CN101956193B (enExample)
TW (1) TWI432532B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US9352003B1 (en) 2010-05-14 2016-05-31 Musculoskeletal Transplant Foundation Tissue-derived tissuegenic implants, and methods of fabricating and using same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
KR20140009975A (ko) * 2010-09-15 2014-01-23 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 침착 방법 및 장치
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
US20130224901A1 (en) * 2012-02-26 2013-08-29 Jiaxiong Wang Production Line to Fabricate CIGS Thin Film Solar Cells via Roll-to-Roll Processes
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
WO2014042319A1 (ko) * 2012-09-17 2014-03-20 한국생산기술연구원 Ｃｉｓ/ｃｇｓ/ｃｉｇｓ 박막 제조방법 및 이를 이용하여 제조된 태양전지
US8809113B2 (en) * 2012-11-10 2014-08-19 Sharp Laboratories Of America, Inc. Solution-processed metal-selenide semiconductor using selenium nanoparticles
US9842733B2 (en) 2013-06-11 2017-12-12 Imec Vzw Method for dissolving chalcogen elements and metal chalcogenides in non-hazardous solvents
WO2020159654A1 (en) 2019-01-29 2020-08-06 Google Llc Integrity protection with message authentication codes having different lengths
CN114590832B (zh) * 2022-03-04 2023-06-23 中国科学院合肥物质科学研究院 一种简便合成非化学计量比纳米硒化铜的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050183767A1 (en) * 2004-02-19 2005-08-25 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
CN1984974A (zh) * 2004-07-16 2007-06-20 禾逊专业化学公司 辐射固化性喷墨油墨及其制备方法和使用方法
WO2008017062A1 (en) * 2006-08-03 2008-02-07 Fry's Metals, Inc. Particles and inks and films using them

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520010A (en) * 1983-06-02 1985-05-28 Xerox Corporation Process for modifying the electrical properties of selenium, and selenium alloys
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
AU2249201A (en) 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
CN100490205C (zh) 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
US7163835B2 (en) 2003-09-26 2007-01-16 E. I. Du Pont De Nemours And Company Method for producing thin semiconductor films by deposition from solution
US20070166453A1 (en) 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
US20080124831A1 (en) 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7115304B2 (en) 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
WO2008057119A1 (en) 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
US8876971B2 (en) 2006-11-09 2014-11-04 Alliance For Sustainable Energy, Llc Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
US20080169025A1 (en) * 2006-12-08 2008-07-17 Basol Bulent M Doping techniques for group ibiiiavia compound layers
US20080280030A1 (en) 2007-01-31 2008-11-13 Van Duren Jeoren K J Solar cell absorber layer formed from metal ion precursors
US8613973B2 (en) 2007-12-06 2013-12-24 International Business Machines Corporation Photovoltaic device with solution-processed chalcogenide absorber layer
JP5511320B2 (ja) * 2008-11-11 2014-06-04 京セラ株式会社 薄膜太陽電池の製法
JP5137796B2 (ja) * 2008-11-26 2013-02-06 京セラ株式会社 化合物半導体薄膜の製法および薄膜太陽電池の製法
JP2012527523A (ja) * 2009-05-21 2012-11-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 銅スズ硫化物および銅亜鉛スズ硫化物インク組成物
US8700051B2 (en) * 2009-05-22 2014-04-15 Qualcomm Incorporated Positioning of a wireless device served by a femto cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050183767A1 (en) * 2004-02-19 2005-08-25 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
CN1984974A (zh) * 2004-07-16 2007-06-20 禾逊专业化学公司 辐射固化性喷墨油墨及其制备方法和使用方法
WO2008017062A1 (en) * 2006-08-03 2008-02-07 Fry's Metals, Inc. Particles and inks and films using them

Also Published As

Publication number Publication date
KR20110007590A (ko) 2011-01-24
CN101956193A (zh) 2011-01-26
EP2275496B1 (en) 2013-05-01
KR101199032B1 (ko) 2012-11-08
EP2275496A1 (en) 2011-01-19
TWI432532B (zh) 2014-04-01
JP2011029624A (ja) 2011-02-10
US20110014377A1 (en) 2011-01-20
JP5562736B2 (ja) 2014-07-30
US8277894B2 (en) 2012-10-02
TW201111450A (en) 2011-04-01

Similar Documents

Publication Publication Date Title
CN101956193B (zh) 硒油墨及其制备和使用方法
CN102031521B (zh) 包含二硫属化物油墨的硒油墨及其制备和使用方法
JP5666836B2 (ja) ジカルコゲナイドセレンインク、並びにその製造方法および使用方法
KR101199031B1 (ko) 셀레늄／１ｂ 족 잉크, 및 그의 제조방법 및 용도
JP6760984B2 (ja) セレン化１３族ナノ粒子
JP5733957B2 (ja) 第３ａ族インク、並びにその製造方法および使用方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address

Address after: Massachusetts, USA

Patentee after: DuPont Electronic Materials International LLC

Country or region after: U.S.A.

Address before: Massachusetts, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS, LLC

Country or region before: U.S.A.

CP03 Change of name, title or address