JP5554563B2 - 次数選択されたオーバレイ測定 - Google Patents
次数選択されたオーバレイ測定 Download PDFInfo
- Publication number
- JP5554563B2 JP5554563B2 JP2009513282A JP2009513282A JP5554563B2 JP 5554563 B2 JP5554563 B2 JP 5554563B2 JP 2009513282 A JP2009513282 A JP 2009513282A JP 2009513282 A JP2009513282 A JP 2009513282A JP 5554563 B2 JP5554563 B2 JP 5554563B2
- Authority
- JP
- Japan
- Prior art keywords
- optical device
- grating
- pitch
- target
- diffraction orders
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81056006P | 2006-06-01 | 2006-06-01 | |
| US60/810,560 | 2006-06-01 | ||
| US89763707P | 2007-01-26 | 2007-01-26 | |
| US60/897,637 | 2007-01-26 | ||
| US11/754,892 | 2007-05-29 | ||
| US11/754,892 US7528941B2 (en) | 2006-06-01 | 2007-05-29 | Order selected overlay metrology |
| PCT/US2007/012875 WO2007143056A2 (en) | 2006-06-01 | 2007-05-31 | Order selected overlay metrology |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014110715A Division JP6073832B2 (ja) | 2006-06-01 | 2014-05-29 | 次数選択されたオーバレイ測定 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009539109A JP2009539109A (ja) | 2009-11-12 |
| JP2009539109A5 JP2009539109A5 (enExample) | 2013-03-28 |
| JP5554563B2 true JP5554563B2 (ja) | 2014-07-23 |
Family
ID=38789680
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009513282A Active JP5554563B2 (ja) | 2006-06-01 | 2007-05-31 | 次数選択されたオーバレイ測定 |
| JP2014110715A Active JP6073832B2 (ja) | 2006-06-01 | 2014-05-29 | 次数選択されたオーバレイ測定 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014110715A Active JP6073832B2 (ja) | 2006-06-01 | 2014-05-29 | 次数選択されたオーバレイ測定 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7528941B2 (enExample) |
| JP (2) | JP5554563B2 (enExample) |
| WO (1) | WO2007143056A2 (enExample) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1036245A1 (nl) | 2007-12-17 | 2009-06-18 | Asml Netherlands Bv | Diffraction based overlay metrology tool and method of diffraction based overlay metrology. |
| US8004679B2 (en) * | 2008-05-09 | 2011-08-23 | Kla-Tencor Corporation | Target design and methods for scatterometry overlay determination |
| US8214771B2 (en) * | 2009-01-08 | 2012-07-03 | Kla-Tencor Corporation | Scatterometry metrology target design optimization |
| NL2005162A (en) | 2009-07-31 | 2011-02-02 | Asml Netherlands Bv | Methods and scatterometers, lithographic systems, and lithographic processing cells. |
| US8441639B2 (en) * | 2009-09-03 | 2013-05-14 | Kla-Tencor Corp. | Metrology systems and methods |
| CN103201682B (zh) | 2010-11-12 | 2015-06-17 | Asml荷兰有限公司 | 量测方法和设备、光刻系统和器件制造方法 |
| WO2012062501A1 (en) | 2010-11-12 | 2012-05-18 | Asml Netherlands B.V. | Metrology method and apparatus, and device manufacturing method |
| KR101976152B1 (ko) | 2011-02-10 | 2019-05-09 | 케이엘에이-텐코 코포레이션 | 오버레이 계측의 콘트라스트 증강을 위한 구조화 조명 |
| US8913237B2 (en) * | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
| KR102102007B1 (ko) | 2012-06-26 | 2020-04-20 | 케이엘에이 코포레이션 | 근접장 계측 |
| KR102231730B1 (ko) | 2012-06-26 | 2021-03-24 | 케이엘에이 코포레이션 | 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거 |
| US9243886B1 (en) | 2012-06-26 | 2016-01-26 | Kla-Tencor Corporation | Optical metrology of periodic targets in presence of multiple diffraction orders |
| JP6133980B2 (ja) * | 2012-07-05 | 2017-05-24 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィのためのメトロロジ |
| WO2014074873A1 (en) * | 2012-11-09 | 2014-05-15 | Kla-Tencor Corporation | Reducing algorithmic inaccuracy in scatterometry overlay metrology |
| US9255787B1 (en) | 2013-01-21 | 2016-02-09 | Kla-Tencor Corporation | Measurement of critical dimension and scanner aberration utilizing metrology targets |
| US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
| JP6602755B2 (ja) * | 2013-06-27 | 2019-11-06 | ケーエルエー コーポレイション | 計測標的の偏光測定及び対応する標的設計 |
| US9059102B2 (en) | 2013-08-15 | 2015-06-16 | International Business Machines Corporation | Metrology marks for unidirectional grating superposition patterning processes |
| US9257351B2 (en) | 2013-08-15 | 2016-02-09 | Globalfoundries Inc. | Metrology marks for bidirectional grating superposition patterning processes |
| WO2015031337A1 (en) | 2013-08-27 | 2015-03-05 | Kla-Tencor Corporation | Removing process-variation-related inaccuracies from scatterometry measurements |
| KR101855220B1 (ko) * | 2013-10-30 | 2018-05-08 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치 및 방법, 계측 타겟을 가지는 기판, 리소그래피 시스템, 및 디바이스 제조 방법 |
| US9490182B2 (en) * | 2013-12-23 | 2016-11-08 | Kla-Tencor Corporation | Measurement of multiple patterning parameters |
| US9784690B2 (en) | 2014-05-12 | 2017-10-10 | Kla-Tencor Corporation | Apparatus, techniques, and target designs for measuring semiconductor parameters |
| NL2015160A (en) | 2014-07-28 | 2016-07-07 | Asml Netherlands Bv | Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method. |
| WO2016045945A1 (en) | 2014-09-26 | 2016-03-31 | Asml Netherlands B.V. | Inspection apparatus and device manufacturing method |
| CN112698551B (zh) | 2014-11-25 | 2024-04-23 | 科磊股份有限公司 | 分析及利用景观 |
| TWI755987B (zh) | 2015-05-19 | 2022-02-21 | 美商克萊譚克公司 | 具有用於疊對測量之形貌相位控制之光學系統 |
| JP6378149B2 (ja) * | 2015-09-16 | 2018-08-22 | 東芝メモリ株式会社 | 欠陥検出装置、欠陥検出方法およびプログラム |
| DE102015221773A1 (de) * | 2015-11-05 | 2017-05-11 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Charakterisierung eines durch wenigstens einen Lithographieschritt strukturierten Wafers |
| WO2017097532A1 (en) | 2015-12-09 | 2017-06-15 | Asml Holding N.V. | A flexible illuminator |
| US9846128B2 (en) * | 2016-01-19 | 2017-12-19 | Applied Materials Israel Ltd. | Inspection system and a method for evaluating an exit pupil of an inspection system |
| JP6731490B2 (ja) | 2016-03-07 | 2020-07-29 | エーエスエムエル ネザーランズ ビー.ブイ. | 照明システムおよびメトロロジシステム |
| KR102640173B1 (ko) * | 2016-06-14 | 2024-02-26 | 삼성전자주식회사 | 회절 기반 오버레이 마크 및 오버레이 계측방법 |
| US11112704B2 (en) * | 2017-02-10 | 2021-09-07 | Kla-Tencor Corporation | Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements |
| JP7115826B2 (ja) * | 2017-07-18 | 2022-08-09 | 三星電子株式会社 | 撮像装置および撮像方法 |
| US10429315B2 (en) * | 2017-07-18 | 2019-10-01 | Samsung Electronics Co., Ltd. | Imaging apparatus and imaging method |
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| KR102729956B1 (ko) | 2018-08-28 | 2024-11-13 | 케이엘에이 코포레이션 | 2-회절된 차수들의 이미징을 사용한 축외 조명 오버레이 측정 |
| WO2020074412A1 (en) * | 2018-10-08 | 2020-04-16 | Asml Netherlands B.V. | Metrology method, patterning device, apparatus and computer program |
| CN113260924B (zh) | 2018-12-31 | 2025-02-18 | Asml荷兰有限公司 | 用于重叠量测的方法及其设备 |
| US11256177B2 (en) * | 2019-09-11 | 2022-02-22 | Kla Corporation | Imaging overlay targets using Moiré elements and rotational symmetry arrangements |
| US11346657B2 (en) | 2020-05-22 | 2022-05-31 | Kla Corporation | Measurement modes for overlay |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| US11355375B2 (en) * | 2020-07-09 | 2022-06-07 | Kla Corporation | Device-like overlay metrology targets displaying Moiré effects |
| US11164307B1 (en) | 2020-07-21 | 2021-11-02 | Kla Corporation | Misregistration metrology by using fringe Moiré and optical Moiré effects |
| JP2023043534A (ja) * | 2021-09-16 | 2023-03-29 | キオクシア株式会社 | 測定方法、測定装置、及びマーク |
| US11841621B2 (en) * | 2021-10-29 | 2023-12-12 | KLA Corporation CA | Moiré scatterometry overlay |
| US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| US12032300B2 (en) | 2022-02-14 | 2024-07-09 | Kla Corporation | Imaging overlay with mutually coherent oblique illumination |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| KR102800621B1 (ko) * | 2022-10-07 | 2025-04-29 | 유한회사 바슬러코리아 | 반도체 샘플의 결함 검사 장치 |
| US20240167813A1 (en) * | 2022-11-23 | 2024-05-23 | Kla Corporation | System and method for suppression of tool induced shift in scanning overlay metrology |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
| US20240337953A1 (en) * | 2023-04-04 | 2024-10-10 | Kla Corporation | System and method for tracking real-time position for scanning overlay metrology |
| US12487533B2 (en) | 2024-01-25 | 2025-12-02 | Kla Corporation | Amplitude asymmetry measurements in overlay metrology |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3351071B2 (ja) * | 1993-12-15 | 2002-11-25 | 株式会社日立製作所 | アライメント方法及び装置 |
| JP2005003689A (ja) * | 1994-10-07 | 2005-01-06 | Renesas Technology Corp | 被検査対象物上のパターンの欠陥検査方法及びその装置 |
| JP3632241B2 (ja) * | 1995-06-02 | 2005-03-23 | 株式会社ニコン | 位置検出装置 |
| JP3595624B2 (ja) * | 1996-04-09 | 2004-12-02 | キヤノン株式会社 | 位置計測方法及び位置計測装置 |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US20030002043A1 (en) | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US7804994B2 (en) | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| JP4095391B2 (ja) * | 2002-09-24 | 2008-06-04 | キヤノン株式会社 | 位置検出方法 |
| JP2004146670A (ja) * | 2002-10-25 | 2004-05-20 | Riipuru:Kk | マスクのパターン位置の誤差測定方法及びこれに使用される露光装置 |
| US7440105B2 (en) | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| JP2005083800A (ja) * | 2003-09-05 | 2005-03-31 | Hitachi Ltd | 欠陥検査方法及び欠陥検査装置 |
| JP2006053056A (ja) * | 2004-08-12 | 2006-02-23 | Nikon Corp | 位置計測方法、位置計測装置、露光装置、及びデバイス製造方法 |
| JP2006071353A (ja) * | 2004-08-31 | 2006-03-16 | Tokyo Seimitsu Co Ltd | 顕微鏡装置、外観検査装置、半導体外観検査装置及び顕微鏡装置における試料照明方法 |
-
2007
- 2007-05-29 US US11/754,892 patent/US7528941B2/en active Active
- 2007-05-31 JP JP2009513282A patent/JP5554563B2/ja active Active
- 2007-05-31 WO PCT/US2007/012875 patent/WO2007143056A2/en not_active Ceased
-
2014
- 2014-05-29 JP JP2014110715A patent/JP6073832B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20070279630A1 (en) | 2007-12-06 |
| JP2009539109A (ja) | 2009-11-12 |
| JP2014160874A (ja) | 2014-09-04 |
| WO2007143056A2 (en) | 2007-12-13 |
| US7528941B2 (en) | 2009-05-05 |
| JP6073832B2 (ja) | 2017-02-01 |
| WO2007143056A3 (en) | 2008-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5554563B2 (ja) | 次数選択されたオーバレイ測定 | |
| KR102571918B1 (ko) | 위치 계측을 위한 계측 센서 | |
| CN113204173B (zh) | 检查设备、检查方法和制造方法 | |
| TWI461857B (zh) | 用於角度解析分光鏡微影特性描述之方法及裝置 | |
| JP4660533B2 (ja) | スキャトロメータ、及びフォーカス分析方法 | |
| KR102221714B1 (ko) | 리소그래피 공정에 의해 기판 상에 형성된 구조체를 측정하는 메트롤로지 장치, 리소그래피 시스템, 및 리소그래피 공정에 의해 기판 상에 형성된 구조체를 측정하는 방법 | |
| TWI551957B (zh) | 檢查方法和裝置,微影裝置,微影製程單元及器件製造方法 | |
| JP5280555B2 (ja) | 検査装置および方法、リソグラフィ装置、リソグラフィ処理セル、およびデバイス製造方法 | |
| JP4898869B2 (ja) | 角度分解した分光リソグラフィの特徴付けの方法および装置 | |
| US20030201404A1 (en) | Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus | |
| KR102170147B1 (ko) | 모듈레이션 기술을 이용한 메트롤로지를 위한 대체 타겟 디자인 | |
| TWI736089B (zh) | 位置度量衡裝置及相關聯光學元件 | |
| US9760020B2 (en) | In-situ metrology | |
| TWI691801B (zh) | 度量衡裝置、微影系統及量測結構之方法 | |
| KR102388682B1 (ko) | 계측 방법 및 디바이스 | |
| JP2020518848A (ja) | メトロロジパラメータ決定及びメトロロジレシピ選択 | |
| JP5091597B2 (ja) | 検査装置、像投影装置、および基板特性測定方法 | |
| JP2016523387A (ja) | 検査装置及び方法、リソグラフィ装置、リソグラフィ処理セル並びにデバイス製造方法 | |
| CN112639623A (zh) | 用于测量对准标记的位置的设备和方法 | |
| TW201732265A (zh) | 對焦監測配置及包括此一配置之檢測設備 | |
| JP2006269669A (ja) | 計測装置及び計測方法、露光装置並びにデバイス製造方法 | |
| CN113227906B (zh) | 位置量测设备和关联的光学元件 | |
| CN120883097A (zh) | 用于量测设备的照射模块 | |
| CN120500664A (zh) | 经由宽带照明的单次抓取光瞳景观 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100511 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120508 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120807 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120814 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20121108 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130813 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131112 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131119 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140430 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140529 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5554563 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |