JP2009539109A5 - - Google Patents

Download PDF

Info

Publication number
JP2009539109A5
JP2009539109A5 JP2009513282A JP2009513282A JP2009539109A5 JP 2009539109 A5 JP2009539109 A5 JP 2009539109A5 JP 2009513282 A JP2009513282 A JP 2009513282A JP 2009513282 A JP2009513282 A JP 2009513282A JP 2009539109 A5 JP2009539109 A5 JP 2009539109A5
Authority
JP
Japan
Prior art keywords
optical device
optical
semiconductor target
grating
characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009513282A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009539109A (ja
JP5554563B2 (ja
Filing date
Publication date
Priority claimed from US11/754,892 external-priority patent/US7528941B2/en
Application filed filed Critical
Publication of JP2009539109A publication Critical patent/JP2009539109A/ja
Publication of JP2009539109A5 publication Critical patent/JP2009539109A5/ja
Application granted granted Critical
Publication of JP5554563B2 publication Critical patent/JP5554563B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009513282A 2006-06-01 2007-05-31 次数選択されたオーバレイ測定 Active JP5554563B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US81056006P 2006-06-01 2006-06-01
US60/810,560 2006-06-01
US89763707P 2007-01-26 2007-01-26
US60/897,637 2007-01-26
US11/754,892 2007-05-29
US11/754,892 US7528941B2 (en) 2006-06-01 2007-05-29 Order selected overlay metrology
PCT/US2007/012875 WO2007143056A2 (en) 2006-06-01 2007-05-31 Order selected overlay metrology

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014110715A Division JP6073832B2 (ja) 2006-06-01 2014-05-29 次数選択されたオーバレイ測定

Publications (3)

Publication Number Publication Date
JP2009539109A JP2009539109A (ja) 2009-11-12
JP2009539109A5 true JP2009539109A5 (enExample) 2013-03-28
JP5554563B2 JP5554563B2 (ja) 2014-07-23

Family

ID=38789680

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009513282A Active JP5554563B2 (ja) 2006-06-01 2007-05-31 次数選択されたオーバレイ測定
JP2014110715A Active JP6073832B2 (ja) 2006-06-01 2014-05-29 次数選択されたオーバレイ測定

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014110715A Active JP6073832B2 (ja) 2006-06-01 2014-05-29 次数選択されたオーバレイ測定

Country Status (3)

Country Link
US (1) US7528941B2 (enExample)
JP (2) JP5554563B2 (enExample)
WO (1) WO2007143056A2 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
US8004679B2 (en) * 2008-05-09 2011-08-23 Kla-Tencor Corporation Target design and methods for scatterometry overlay determination
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
CN103201682B (zh) 2010-11-12 2015-06-17 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
WO2012062501A1 (en) 2010-11-12 2012-05-18 Asml Netherlands B.V. Metrology method and apparatus, and device manufacturing method
KR101976152B1 (ko) 2011-02-10 2019-05-09 케이엘에이-텐코 코포레이션 오버레이 계측의 콘트라스트 증강을 위한 구조화 조명
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
KR102102007B1 (ko) 2012-06-26 2020-04-20 케이엘에이 코포레이션 근접장 계측
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US9243886B1 (en) 2012-06-26 2016-01-26 Kla-Tencor Corporation Optical metrology of periodic targets in presence of multiple diffraction orders
JP6133980B2 (ja) * 2012-07-05 2017-05-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィのためのメトロロジ
WO2014074873A1 (en) * 2012-11-09 2014-05-15 Kla-Tencor Corporation Reducing algorithmic inaccuracy in scatterometry overlay metrology
US9255787B1 (en) 2013-01-21 2016-02-09 Kla-Tencor Corporation Measurement of critical dimension and scanner aberration utilizing metrology targets
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
JP6602755B2 (ja) * 2013-06-27 2019-11-06 ケーエルエー コーポレイション 計測標的の偏光測定及び対応する標的設計
US9059102B2 (en) 2013-08-15 2015-06-16 International Business Machines Corporation Metrology marks for unidirectional grating superposition patterning processes
US9257351B2 (en) 2013-08-15 2016-02-09 Globalfoundries Inc. Metrology marks for bidirectional grating superposition patterning processes
WO2015031337A1 (en) 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
KR101855220B1 (ko) * 2013-10-30 2018-05-08 에이에스엠엘 네델란즈 비.브이. 검사 장치 및 방법, 계측 타겟을 가지는 기판, 리소그래피 시스템, 및 디바이스 제조 방법
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
US9784690B2 (en) 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
NL2015160A (en) 2014-07-28 2016-07-07 Asml Netherlands Bv Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method.
WO2016045945A1 (en) 2014-09-26 2016-03-31 Asml Netherlands B.V. Inspection apparatus and device manufacturing method
CN112698551B (zh) 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
TWI755987B (zh) 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
JP6378149B2 (ja) * 2015-09-16 2018-08-22 東芝メモリ株式会社 欠陥検出装置、欠陥検出方法およびプログラム
DE102015221773A1 (de) * 2015-11-05 2017-05-11 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Charakterisierung eines durch wenigstens einen Lithographieschritt strukturierten Wafers
WO2017097532A1 (en) 2015-12-09 2017-06-15 Asml Holding N.V. A flexible illuminator
US9846128B2 (en) * 2016-01-19 2017-12-19 Applied Materials Israel Ltd. Inspection system and a method for evaluating an exit pupil of an inspection system
JP6731490B2 (ja) 2016-03-07 2020-07-29 エーエスエムエル ネザーランズ ビー．ブイ． 照明システムおよびメトロロジシステム
KR102640173B1 (ko) * 2016-06-14 2024-02-26 삼성전자주식회사 회절 기반 오버레이 마크 및 오버레이 계측방법
US11112704B2 (en) * 2017-02-10 2021-09-07 Kla-Tencor Corporation Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
JP7115826B2 (ja) * 2017-07-18 2022-08-09 三星電子株式会社 撮像装置および撮像方法
US10429315B2 (en) * 2017-07-18 2019-10-01 Samsung Electronics Co., Ltd. Imaging apparatus and imaging method
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
KR102729956B1 (ko) 2018-08-28 2024-11-13 케이엘에이 코포레이션 2-회절된 차수들의 이미징을 사용한 축외 조명 오버레이 측정
WO2020074412A1 (en) * 2018-10-08 2020-04-16 Asml Netherlands B.V. Metrology method, patterning device, apparatus and computer program
CN113260924B (zh) 2018-12-31 2025-02-18 Asml荷兰有限公司 用于重叠量测的方法及其设备
US11256177B2 (en) * 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
US11346657B2 (en) 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
US11164307B1 (en) 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
JP2023043534A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 測定方法、測定装置、及びマーク
US11841621B2 (en) * 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
KR102800621B1 (ko) * 2022-10-07 2025-04-29 유한회사 바슬러코리아 반도체 샘플의 결함 검사 장치
US20240167813A1 (en) * 2022-11-23 2024-05-23 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US20240337953A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for tracking real-time position for scanning overlay metrology
US12487533B2 (en) 2024-01-25 2025-12-02 Kla Corporation Amplitude asymmetry measurements in overlay metrology

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3351071B2 (ja) * 1993-12-15 2002-11-25 株式会社日立製作所 アライメント方法及び装置
JP2005003689A (ja) * 1994-10-07 2005-01-06 Renesas Technology Corp 被検査対象物上のパターンの欠陥検査方法及びその装置
JP3632241B2 (ja) * 1995-06-02 2005-03-23 株式会社ニコン 位置検出装置
JP3595624B2 (ja) * 1996-04-09 2004-12-02 キヤノン株式会社 位置計測方法及び位置計測装置
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US7804994B2 (en) 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
JP4095391B2 (ja) * 2002-09-24 2008-06-04 キヤノン株式会社 位置検出方法
JP2004146670A (ja) * 2002-10-25 2004-05-20 Riipuru:Kk マスクのパターン位置の誤差測定方法及びこれに使用される露光装置
US7440105B2 (en) 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
JP2005083800A (ja) * 2003-09-05 2005-03-31 Hitachi Ltd 欠陥検査方法及び欠陥検査装置
JP2006053056A (ja) * 2004-08-12 2006-02-23 Nikon Corp 位置計測方法、位置計測装置、露光装置、及びデバイス製造方法
JP2006071353A (ja) * 2004-08-31 2006-03-16 Tokyo Seimitsu Co Ltd 顕微鏡装置、外観検査装置、半導体外観検査装置及び顕微鏡装置における試料照明方法

Similar Documents

Publication Publication Date Title
JP2009539109A5 (enExample)
JP6521265B2 (ja) 波面計測方法及び装置、露光方法及び装置、並びにデバイス製造方法
JP6612452B2 (ja) 対物レンズシステム
JP5101419B2 (ja) 反射型回折格子
KR102536386B1 (ko) 광 디바이스 및 연관된 시스템
JP2015506471A5 (enExample)
KR101551342B1 (ko) Ｅｕｖ-방사선에 대한 격자, 격자를 제조하는 방법, 및 파면 측정 시스템
JP3950858B2 (ja) 波面測定システム、ｅｕｖフォトリソグラフィシステム、及び光学系の波面を測定する方法
TW200831855A (en) Exposure apparatus and device manufacturing method
CN107111241A (zh) 具有波前测量装置与光学波前操纵器的投射曝光设备
JP2006514441A5 (enExample)
US10331042B2 (en) Method for a lithographic apparatus
JP2009527113A5 (enExample)
TW200540398A (en) Shearing interferometer with dynamic pupil fill
JP2009525590A5 (enExample)
US7388696B2 (en) Diffuser, wavefront source, wavefront sensor and projection exposure apparatus
TW201140019A (en) Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
JP6422450B2 (ja) 投影露光装置上で光学的対称性を測定する装置及び方法
JP2011187733A (ja) 光学装置およびデバイス製造方法
KR102755819B1 (ko) 빔 측정 시스템, 리소그래피 시스템, 및 방법
TW200422785A (en) Lithographic apparatus and device manufacturing method
KR102784325B1 (ko) 퓨필 형상을 측정하기 위한 방법 및 장치
US11029259B2 (en) Detection device for detecting a structure on an area portion of a lithography mask, and apparatus comprising a detection device of this type
US11300892B2 (en) Sensor apparatus and method for lithographic measurements
JP2005311296A (ja) 波面収差測定方法、波面収差測定系の校正方法、波面収差測定装置、及び投影露光装置