JP5553717B2 - 光電場増強デバイスを用いた光の測定方法および測定装置 - Google Patents

光電場増強デバイスを用いた光の測定方法および測定装置 Download PDF

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Publication number
JP5553717B2
JP5553717B2 JP2010208984A JP2010208984A JP5553717B2 JP 5553717 B2 JP5553717 B2 JP 5553717B2 JP 2010208984 A JP2010208984 A JP 2010208984A JP 2010208984 A JP2010208984 A JP 2010208984A JP 5553717 B2 JP5553717 B2 JP 5553717B2
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Prior art keywords
photoelectric field
field enhancement
substrate
transparent substrate
convex structure
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Expired - Fee Related
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JP2010208984A
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English (en)
Japanese (ja)
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JP2012063294A (ja
Inventor
昌之 納谷
真也 白田
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2010208984A priority Critical patent/JP5553717B2/ja
Priority to PCT/JP2011/004966 priority patent/WO2012035717A1/fr
Priority to EP11824737.8A priority patent/EP2618134B1/fr
Priority to CN201180044475.5A priority patent/CN103109178B/zh
Publication of JP2012063294A publication Critical patent/JP2012063294A/ja
Priority to US13/785,608 priority patent/US9140652B2/en
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Publication of JP5553717B2 publication Critical patent/JP5553717B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons

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  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2010208984A 2010-09-17 2010-09-17 光電場増強デバイスを用いた光の測定方法および測定装置 Expired - Fee Related JP5553717B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010208984A JP5553717B2 (ja) 2010-09-17 2010-09-17 光電場増強デバイスを用いた光の測定方法および測定装置
PCT/JP2011/004966 WO2012035717A1 (fr) 2010-09-17 2011-09-05 Procédé de mesure de lumière et dispositif de mesure de lumière utilisant un dispositif d'amélioration de champ électro-optique
EP11824737.8A EP2618134B1 (fr) 2010-09-17 2011-09-05 Procédé de mesure de lumière et dispositif de mesure de lumière utilisant un dispositif d'amélioration de champ électro-optique
CN201180044475.5A CN103109178B (zh) 2010-09-17 2011-09-05 利用光电场增强设备的光的测量方法及测量装置
US13/785,608 US9140652B2 (en) 2010-09-17 2013-03-05 Light measurement method and measurement apparatus using an optical field enhancement device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010208984A JP5553717B2 (ja) 2010-09-17 2010-09-17 光電場増強デバイスを用いた光の測定方法および測定装置

Publications (2)

Publication Number Publication Date
JP2012063294A JP2012063294A (ja) 2012-03-29
JP5553717B2 true JP5553717B2 (ja) 2014-07-16

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JP2010208984A Expired - Fee Related JP5553717B2 (ja) 2010-09-17 2010-09-17 光電場増強デバイスを用いた光の測定方法および測定装置

Country Status (5)

Country Link
US (1) US9140652B2 (fr)
EP (1) EP2618134B1 (fr)
JP (1) JP5553717B2 (fr)
CN (1) CN103109178B (fr)
WO (1) WO2012035717A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012198090A (ja) * 2011-03-22 2012-10-18 Fujifilm Corp 光電場増強デバイスおよび該デバイスを備えた測定装置
US10431505B2 (en) 2016-06-07 2019-10-01 Samsung Electronics Co., Ltd. Method of inspecting surface having a minute pattern based on detecting light reflected from metal layer on the surface

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140154668A1 (en) 2010-05-21 2014-06-05 The Trustees Of Princeton University Structures for Enhancement of Local Electric Field, Light Absorption, Light Radiation, Material Detection and Methods for Making and Using of the Same.
JP5801587B2 (ja) * 2011-03-31 2015-10-28 富士フイルム株式会社 光電場増強デバイスの製造方法
WO2013154770A1 (fr) * 2012-04-10 2013-10-17 The Trustees Of Princeton University Capteur ultra-sensible
JP6145861B2 (ja) * 2012-08-15 2017-06-14 富士フイルム株式会社 光電場増強デバイス、光測定装置および方法
JP5947182B2 (ja) * 2012-09-28 2016-07-06 富士フイルム株式会社 光電場増強デバイスを用いた測定装置
JP5947181B2 (ja) 2012-09-28 2016-07-06 富士フイルム株式会社 光電場増強デバイスを用いた光測定装置
JP6134975B2 (ja) * 2013-04-08 2017-05-31 富士フイルム株式会社 測定用デバイス、測定装置および方法
JP2014228323A (ja) * 2013-05-20 2014-12-08 ウシオ電機株式会社 検査方法、センサ
JPWO2020203969A1 (fr) * 2019-04-03 2020-10-08
TWI776322B (zh) * 2020-12-18 2022-09-01 日月光半導體製造股份有限公司 用於光學量測之系統及方法

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JPS6148124A (ja) 1984-08-14 1986-03-08 Fuji Photo Film Co Ltd 磁気記録媒体
DE59109246D1 (de) 1990-05-03 2003-04-03 Hoffmann La Roche Mikrooptischer Sensor
US5693152A (en) * 1995-08-14 1997-12-02 University Of Wyoming Molecular specific detector for separation science using surface enhanced raman spectroscopy
JPH09202649A (ja) * 1996-01-24 1997-08-05 Central Glass Co Ltd 花弁状透明アルミナ膜及びその形成法
US6406777B1 (en) * 2000-06-14 2002-06-18 The United States Of America As Represented By The Secretary Of The Navy Metal and glass structure for use in surface enhanced Raman spectroscopy and method for fabricating same
US7361313B2 (en) 2003-02-18 2008-04-22 Intel Corporation Methods for uniform metal impregnation into a nanoporous material
US6970239B2 (en) 2002-06-12 2005-11-29 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
JP4163606B2 (ja) 2003-12-10 2008-10-08 富士フイルム株式会社 微細構造体、微細構造体の作製方法、ラマン分光方法および装置
CN100570336C (zh) * 2004-02-13 2009-12-16 欧姆龙株式会社 表面等离子共振传感用芯片、其制造方法以及测定方法
GB0424458D0 (en) * 2004-11-04 2004-12-08 Mesophotonics Ltd Metal nano-void photonic crystal for enhanced raman spectroscopy
US7483130B2 (en) 2004-11-04 2009-01-27 D3 Technologies, Ltd. Metal nano-void photonic crystal for enhanced Raman spectroscopy
US7835006B2 (en) * 2004-11-05 2010-11-16 Nomadics, Inc. Optical fiber sensors using grating-assisted surface plasmon-coupled emission (GASPCE)
JP2006145230A (ja) * 2004-11-16 2006-06-08 Canon Inc 被分析物担体およびその製造方法
JP4762801B2 (ja) * 2006-06-27 2011-08-31 富士フイルム株式会社 センサ、センシング装置
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JP2010203900A (ja) * 2009-03-03 2010-09-16 Konica Minolta Holdings Inc 表面プラズモン増強蛍光センサおよび表面プラズモン増強蛍光センサに用いられるチップ構造体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012198090A (ja) * 2011-03-22 2012-10-18 Fujifilm Corp 光電場増強デバイスおよび該デバイスを備えた測定装置
US10431505B2 (en) 2016-06-07 2019-10-01 Samsung Electronics Co., Ltd. Method of inspecting surface having a minute pattern based on detecting light reflected from metal layer on the surface

Also Published As

Publication number Publication date
EP2618134A1 (fr) 2013-07-24
EP2618134A4 (fr) 2014-12-03
WO2012035717A1 (fr) 2012-03-22
US20130182248A1 (en) 2013-07-18
JP2012063294A (ja) 2012-03-29
EP2618134B1 (fr) 2016-05-25
US9140652B2 (en) 2015-09-22
CN103109178B (zh) 2016-08-03
CN103109178A (zh) 2013-05-15

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