JP5801587B2 - 光電場増強デバイスの製造方法 - Google Patents
光電場増強デバイスの製造方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 claims description 132
- 239000002184 metal Substances 0.000 claims description 132
- 239000000758 substrate Substances 0.000 claims description 69
- 239000010408 film Substances 0.000 claims description 41
- 239000010931 gold Substances 0.000 claims description 32
- 229910052709 silver Inorganic materials 0.000 claims description 27
- 229910052737 gold Inorganic materials 0.000 claims description 24
- 239000004332 silver Substances 0.000 claims description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910001593 boehmite Inorganic materials 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052697 platinum Inorganic materials 0.000 claims description 3
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- 238000009826 distribution Methods 0.000 description 7
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
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- 125000002091 cationic group Chemical group 0.000 description 1
- VYXSBFYARXAAKO-WTKGSRSZSA-N chembl402140 Chemical compound Cl.C1=2C=C(C)C(NCC)=CC=2OC2=C\C(=N/CC)C(C)=CC2=C1C1=CC=CC=C1C(=O)OCC VYXSBFYARXAAKO-WTKGSRSZSA-N 0.000 description 1
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- 239000002120 nanofilm Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
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- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
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- Chemical Kinetics & Catalysis (AREA)
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- Inorganic Chemistry (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
前記基板上に形成された薄膜を水熱反応させることにより、前記第1の金属または前記金属酸化物の水酸化物からなる微細凹凸構造層を形成する微細凹凸構造層作製工程と、
該微細凹凸構造層の表面に、第2の金属から成る金属微細凹凸構造層を形成する金属層作製工程とを含むことを特徴とする。
また、それぞれの工程が、比較的大面積の基板や任意の形状を有する基板にも適応可能であり、大面積かつ任意形状の光電場増強デバイスが作製可能となる。
なお、第1の金属としては、アルミニウムの他、チタン(Ti)など、同様に水熱反応により微細凹凸構造を形成する金属を用いることができる。
水熱反応としては、煮沸処理に限らず、第1の金属が成膜された基板を高温の水蒸気に曝して第1の金属を高温の水蒸気と反応させる処理を行ってもよい。
特に、金属微細凹凸構造25の隣接凸部同士が間隔が20nm以下で近接している場合、光の照射によりこの凸部間の隙間においてホットスポットと呼ばれる非常に強い光電場増強場が生成されるため、隣接凸部間の距離が20nm以下の箇所が多数存在することが好ましい。
なお、第2の金属からなる金属微細凹凸構造層上に誘電体を積層する場合、誘電体の膜厚は50nm以下とすることが望ましい。例えば、金属微細構造層上にSiO2を10nm積層する。
第2の金属からなる微粒子としては直径が100nm以下であることが、高い光電場増強効果を得ることができ好ましい。
1)金属微粒子を有機溶媒に分散させコロイド溶液をベーマイト基板にキャストし乾燥させる。
2)ベーマイト基板上にポリカチオンやカチオン性分子膜を吸着させ、その上に静電気相互作用によって金属微粒子を分散、固定する。
3)ベーマイト基板表面をチオール誘導体で修飾し、金属―イオウ間の自発的な結合形成を利用して金属微粒子を固定させる。
4)金属微粒子が負に帯電していることを利用して、電気泳動法によりベーマイト基板上に金属微粒子を集積する。
以上のような方法により、金属微粒子が微細凹凸構造層上に分散固定されてなる金属微細凹凸構造を得ることができる。
基板11として、ガラス基板(BK−7;コーニング社製Eagle2000)を用いた。
アセトン5分、メタノール5分の超音波洗浄(45kHz)を行った後、ガラス基板11にスパッタ装置(キャノンアネルバ社製)を用いてアルミニウム20を25nm厚成膜した。なお、表面形状測定器(TENCOR社製)を用いて、アルミニウム厚みを測定し、厚みは25nm(±10%)であることを確認した。
その沸騰水の中にアルミニウム20付きガラス基板11を浸水させて、5分間経過後に取り出した。この際、アルミニウム20付きガラス基板11を沸騰水に浸水させて1−2分程度でアルミニウムが透明化したことを確認した。この透明化は煮沸処理により、アルミニウム20がバイヤーライトもしくはベーマイトとからなる微細凹凸構造層22となったためである。
上記方法で作製した光電場増強基板の各サンプル上にそれぞれ被検体としてエタノールにローダミン6Gを溶かした溶液100μMを滴下し、乾燥させた測定サンプルを用い、ラマン散乱光を測定した。
11 透明基板
20 アルミニウム
22 微細凹凸構造層
23 微細凹凸構造
24 金属微細凹凸構造層(金属層)
25 金属微細凹凸構造
Claims (7)
- 基板上にアルミニウムまたはアルミナから成る薄膜を形成する薄膜形成工程と、
前記基板上に形成された薄膜を水熱反応させることにより、ベーマイトからなる、鋸歯状の断面を有する微細凹凸構造層を形成する微細凹凸構造層作製工程と、
該微細凹凸構造層の表面に、第2の金属から成る金属微細凹凸構造層を、該金属微細凹凸構造層の凸部が前記第2の金属が凝集してなる粒子状となるように形成する金属層作製工程とを含むことを特徴とする光電場増強デバイスの製造方法。 - 前記金属層作製工程において、前記金属微細凹凸構造層として前記微細凹凸構造とは形状が異なる凹凸構造を表面に有する金属層を形成することを特徴とする請求項1記載の光電場増強デバイスの製造方法。
- 前記第2の金属が、金、銀、銅、アルミニウムまたはプラチナであることを特徴とする請求項1または2項記載の光電場増強デバイスの製造方法。
- 前記金属層作製工程が、前記微細凹凸構造層の表面に前記第2の金属を蒸着する金属蒸着工程であることを特徴とする請求項1から3いずれか1項記載の光電場増強デバイスの製造方法。
- 前記第2の金属が金であり、蒸着膜厚が30nm以上であることを特徴とする請求項4記載の光電場増強デバイスの製造方法。
- 前記第2の金属が銀であり、蒸着膜厚が150nm以下であることを特徴とする請求項4記載の光電場増強デバイスの製造方法。
- 前記金属層作製工程の後に、前記第2の金属からなる金属微細構造層上に該第2の金属とは異なる第3の金属および誘電体のいずれか一方を積層する積層工程を含むことを特徴とする請求項1から6いずれか1項記載の光電場増強デバイスの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2011077868A JP5801587B2 (ja) | 2011-03-31 | 2011-03-31 | 光電場増強デバイスの製造方法 |
PCT/JP2012/002072 WO2012132385A1 (ja) | 2011-03-31 | 2012-03-26 | 光電場増強デバイスの製造方法 |
CN201280016792.0A CN103492861B (zh) | 2011-03-31 | 2012-03-26 | 光电场增强器件的制造方法 |
EP12764916.8A EP2693202B1 (en) | 2011-03-31 | 2012-03-26 | Manufacturing method for optical-electric-field enhancement device |
US14/041,877 US20140034235A1 (en) | 2011-03-31 | 2013-09-30 | Method for producing optical electrical field enhancing device |
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JP2011077868A JP5801587B2 (ja) | 2011-03-31 | 2011-03-31 | 光電場増強デバイスの製造方法 |
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JP5801587B2 true JP5801587B2 (ja) | 2015-10-28 |
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JP6145861B2 (ja) | 2012-08-15 | 2017-06-14 | 富士フイルム株式会社 | 光電場増強デバイス、光測定装置および方法 |
JP2014190834A (ja) * | 2013-03-27 | 2014-10-06 | Fujifilm Corp | 光電場増強デバイスおよびその製造方法 |
JP6229387B2 (ja) * | 2013-09-12 | 2017-11-15 | 大日本印刷株式会社 | 光学部材、及びその製造方法 |
WO2016031140A1 (ja) * | 2014-08-27 | 2016-03-03 | 富士フイルム株式会社 | 光電場増強デバイス |
CN105158228B (zh) * | 2015-07-30 | 2018-07-20 | 西北大学 | 基于勃姆石纳米薄膜的sers基底及制备方法 |
WO2017048687A1 (en) * | 2015-09-17 | 2017-03-23 | Gerhard Maale | Sensor device for biosensing and other applications |
CN106093007A (zh) * | 2016-06-20 | 2016-11-09 | 上海理工大学 | 一种表面增强拉曼散射基底及其制备方法 |
CN108275651A (zh) * | 2018-01-22 | 2018-07-13 | 临沂大学 | 一种表面增强拉曼散射基底的制备方法 |
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US4190321A (en) * | 1977-02-18 | 1980-02-26 | Minnesota Mining And Manufacturing Company | Microstructured transmission and reflectance modifying coating |
US4252843A (en) * | 1977-02-18 | 1981-02-24 | Minnesota Mining And Manufacturing Company | Process for forming a microstructured transmission and reflectance modifying coating |
JPH09202649A (ja) * | 1996-01-24 | 1997-08-05 | Central Glass Co Ltd | 花弁状透明アルミナ膜及びその形成法 |
US6406777B1 (en) * | 2000-06-14 | 2002-06-18 | The United States Of America As Represented By The Secretary Of The Navy | Metal and glass structure for use in surface enhanced Raman spectroscopy and method for fabricating same |
US7361313B2 (en) | 2003-02-18 | 2008-04-22 | Intel Corporation | Methods for uniform metal impregnation into a nanoporous material |
US6970239B2 (en) | 2002-06-12 | 2005-11-29 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
JP4163606B2 (ja) | 2003-12-10 | 2008-10-08 | 富士フイルム株式会社 | 微細構造体、微細構造体の作製方法、ラマン分光方法および装置 |
JP2006145230A (ja) | 2004-11-16 | 2006-06-08 | Canon Inc | 被分析物担体およびその製造方法 |
JP2007240361A (ja) * | 2006-03-09 | 2007-09-20 | Sekisui Chem Co Ltd | 局在プラズモン増強センサ |
JP4639241B2 (ja) * | 2007-02-20 | 2011-02-23 | キヤノン株式会社 | 光学用部材、それを用いた光学系及び光学用部材の製造方法 |
JP2009109395A (ja) * | 2007-10-31 | 2009-05-21 | Fujifilm Corp | 微細構造体の作製方法、微細構造体、ラマン分光用デバイス、ラマン分光装置、分析装置、検出装置、および質量分析装置 |
JP2009236830A (ja) * | 2008-03-28 | 2009-10-15 | Sumitomo Precision Prod Co Ltd | 被分析物担体、及び、その製造方法 |
CN102428359B (zh) * | 2009-03-04 | 2014-12-31 | 长谷川裕起 | 表面增强拉曼散射活性测定基板 |
US8427639B2 (en) * | 2009-05-07 | 2013-04-23 | Nant Holdings Ip, Llc | Surfaced enhanced Raman spectroscopy substrates |
US20110128535A1 (en) * | 2009-11-30 | 2011-06-02 | David Eugene Baker | Nano-Structured Substrates, Articles, and Methods Thereof |
JP5552007B2 (ja) * | 2010-09-17 | 2014-07-16 | 富士フイルム株式会社 | 光電場増強デバイス |
JP5553717B2 (ja) * | 2010-09-17 | 2014-07-16 | 富士フイルム株式会社 | 光電場増強デバイスを用いた光の測定方法および測定装置 |
JP2012132743A (ja) * | 2010-12-21 | 2012-07-12 | Fujifilm Corp | 光電場増強デバイスおよび光検出装置 |
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EP2693202A1 (en) | 2014-02-05 |
CN103492861B (zh) | 2016-08-10 |
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WO2012132385A1 (ja) | 2012-10-04 |
US20140034235A1 (en) | 2014-02-06 |
CN103492861A (zh) | 2014-01-01 |
JP2012211839A (ja) | 2012-11-01 |
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