JP5548446B2 - 化学気相堆積のための装置及び方法 - Google Patents

化学気相堆積のための装置及び方法 Download PDF

Info

Publication number
JP5548446B2
JP5548446B2 JP2009505583A JP2009505583A JP5548446B2 JP 5548446 B2 JP5548446 B2 JP 5548446B2 JP 2009505583 A JP2009505583 A JP 2009505583A JP 2009505583 A JP2009505583 A JP 2009505583A JP 5548446 B2 JP5548446 B2 JP 5548446B2
Authority
JP
Japan
Prior art keywords
sintered metal
porous sintered
container
metal frit
chemical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009505583A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009533556A (ja
JP2009533556A5 (enExample
Inventor
ディヴィッド， ケー． カールソン，
エロール サンチェス，
サティーシ クプラオ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2009533556A publication Critical patent/JP2009533556A/ja
Publication of JP2009533556A5 publication Critical patent/JP2009533556A5/ja
Application granted granted Critical
Publication of JP5548446B2 publication Critical patent/JP5548446B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009505583A 2006-04-11 2007-04-11 化学気相堆積のための装置及び方法 Active JP5548446B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US79123006P 2006-04-11 2006-04-11
US60/791,230 2006-04-11
US11/697,937 2007-04-09
US11/697,937 US7967911B2 (en) 2006-04-11 2007-04-09 Apparatus and methods for chemical vapor deposition
PCT/US2007/066366 WO2007121202A1 (en) 2006-04-11 2007-04-11 Apparatus and methods for chemical vapor deposition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012226073A Division JP5726831B2 (ja) 2006-04-11 2012-10-11 化学気相堆積のための装置及び方法

Publications (3)

Publication Number Publication Date
JP2009533556A JP2009533556A (ja) 2009-09-17
JP2009533556A5 JP2009533556A5 (enExample) 2011-11-24
JP5548446B2 true JP5548446B2 (ja) 2014-07-16

Family

ID=38229865

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009505583A Active JP5548446B2 (ja) 2006-04-11 2007-04-11 化学気相堆積のための装置及び方法
JP2012226073A Active JP5726831B2 (ja) 2006-04-11 2012-10-11 化学気相堆積のための装置及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012226073A Active JP5726831B2 (ja) 2006-04-11 2012-10-11 化学気相堆積のための装置及び方法

Country Status (6)

Country Link
US (2) US7967911B2 (enExample)
JP (2) JP5548446B2 (enExample)
KR (1) KR101076518B1 (enExample)
CN (1) CN101426953B (enExample)
DE (1) DE112007000898T5 (enExample)
WO (1) WO2007121202A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2432371B (en) * 2005-11-17 2011-06-15 Epichem Ltd Improved bubbler for the transportation of substances by a carrier gas
US7967911B2 (en) * 2006-04-11 2011-06-28 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition
US7740816B1 (en) * 2008-02-06 2010-06-22 Vapor Point, LLC Method for treating gases to be scrubbed
US7803337B1 (en) 2008-02-06 2010-09-28 Vapor Point, LLC Method for treating a fluid to be scrubbed
FR2935800B1 (fr) * 2008-09-09 2010-11-19 R & I Alliance Procede et dispositif de detection de fuites dans une conduite de liquide souterraine, notamment une conduite d'eau
US8568529B2 (en) * 2009-04-10 2013-10-29 Applied Materials, Inc. HVPE chamber hardware
JP5898624B2 (ja) * 2009-11-02 2016-04-06 シグマ−アルドリッチ・カンパニー、エルエルシー 蒸発器
KR101084997B1 (ko) * 2011-06-30 2011-11-18 (주)그랜드 텍 캐리어 기체에 의한 화합물 기화용 버블러
US8795420B1 (en) * 2011-07-27 2014-08-05 Vapor Point, LLC Apparatus for removing unwanted contaminates from gases
JP6270729B2 (ja) * 2011-11-10 2018-01-31 サン‐ゴバン、クリストー、エ、デテクトゥールＳａｉｎｔ−Ｇｏｂａｉｎ Ｃｒｉｓｔａｕｘ ＆ Ｄｅｔｅｃｔｅｕｒｓ 半導体結晶材料の形成に用いるシステム
US20130220221A1 (en) * 2012-02-23 2013-08-29 Applied Materials, Inc. Method and apparatus for precursor delivery
US20140242374A1 (en) * 2013-02-22 2014-08-28 Infineon Technologies Ag Porous Metal Coating
CN104342751B (zh) * 2013-08-02 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔和mocvd设备
WO2015164029A1 (en) * 2014-04-21 2015-10-29 Entegris, Inc. Solid vaporizer
US9914632B2 (en) * 2014-08-22 2018-03-13 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US10563305B2 (en) 2015-05-13 2020-02-18 Versum Materials Us, Llc Container for chemical precursors in a deposition process
TWI624554B (zh) * 2015-08-21 2018-05-21 弗里松股份有限公司 蒸發源
MY190445A (en) 2015-08-21 2022-04-21 Flisom Ag Homogeneous linear evaporation source
US10480070B2 (en) * 2016-05-12 2019-11-19 Versum Materials Us, Llc Delivery container with flow distributor
WO2018111720A1 (en) 2016-12-12 2018-06-21 Applied Materials, Inc. Precursor control system and process
KR20190112212A (ko) * 2017-03-03 2019-10-02 어플라이드 머티어리얼스, 인코포레이티드 앰풀로부터의 플럭스를 증가시키기 위한 장치
KR102344996B1 (ko) * 2017-08-18 2021-12-30 삼성전자주식회사 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
US10947621B2 (en) * 2017-10-23 2021-03-16 Applied Materials, Inc. Low vapor pressure chemical delivery
US11166441B2 (en) 2018-07-13 2021-11-09 Versum Materials Us, Llc Vapor delivery container with flow distributor
CN118422165A (zh) * 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
US11834740B2 (en) * 2020-11-10 2023-12-05 Applied Materials, Inc. Apparatus, system, and method for generating gas for use in a process chamber
US12054825B2 (en) * 2021-06-22 2024-08-06 Applied Materials, Inc. Bottom fed sublimation bed for high saturation efficiency in semiconductor applications
FI130131B (en) * 2021-09-07 2023-03-09 Picosun Oy Precursor container

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496609A (en) 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US4232063A (en) 1978-11-14 1980-11-04 Applied Materials, Inc. Chemical vapor deposition reactor and process
US4579080A (en) 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS60131973A (ja) 1983-12-19 1985-07-13 Matsushita Electric Ind Co Ltd 有機金属の気化方法
US4668365A (en) 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5037624A (en) * 1987-03-24 1991-08-06 Advanced Technology Materials Inc. Composition, apparatus, and process, for sorption of gaseous compounds of group II-VII elements
JPH116065A (ja) * 1997-06-16 1999-01-12 Seiko Epson Corp Ｃｖｄに供する液体ソースのバブラー
US6444038B1 (en) * 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
EP1079001B1 (en) * 1999-08-20 2005-06-15 Morton International, Inc. Dual fritted bubbler
EP1160355B1 (en) * 2000-05-31 2004-10-27 Shipley Company LLC Bubbler
TW200300701A (en) * 2001-11-30 2003-06-16 Asml Us Inc High flow rate bubbler system and method
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
JP4352783B2 (ja) * 2002-08-23 2009-10-28 東京エレクトロン株式会社 ガス供給系及び処理システム
US7132128B2 (en) 2005-03-31 2006-11-07 Tokyo Electron Limited Method and system for depositing material on a substrate using a solid precursor
US7967911B2 (en) * 2006-04-11 2011-06-28 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition

Also Published As

Publication number Publication date
CN101426953B (zh) 2012-05-30
JP2009533556A (ja) 2009-09-17
US8313804B2 (en) 2012-11-20
KR20080108350A (ko) 2008-12-12
US7967911B2 (en) 2011-06-28
JP5726831B2 (ja) 2015-06-03
US20080014350A1 (en) 2008-01-17
KR101076518B1 (ko) 2011-10-24
WO2007121202A1 (en) 2007-10-25
US20110217466A1 (en) 2011-09-08
DE112007000898T5 (de) 2009-05-07
JP2013040410A (ja) 2013-02-28
CN101426953A (zh) 2009-05-06

Similar Documents

Publication Publication Date Title
JP5726831B2 (ja) 化学気相堆積のための装置及び方法
US20240209501A1 (en) Reactant vaporizer and related systems and methods
US7584942B2 (en) Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
KR101152715B1 (ko) 증기 이송 장치, 기화기, 기화기 유닛 및 기화된 소스 물질 이송 방법
JP6199744B2 (ja) 基板処理装置、半導体装置の製造方法および気化装置
JP5449221B2 (ja) 有機金属前駆物質を複数のエピタキシャル・リアクター部にバルク供給するための方法
JP5889971B2 (ja) 安定した先駆物質供給のための泡供給システム
US20060065254A1 (en) Vaporizer
TW202331903A (zh) 用於向反應腔室配送氣相反應物之裝置及相關方法
US20050249873A1 (en) Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
KR20010109202A (ko) 거품기
US20210189558A1 (en) Vapor delivery systems for solid and liquid materials
CN118800694B (zh) 蒸发输送装置、设备、控制方法和半导体器件
TWI388688B (zh) 化學氣相沈積法及設備
US20200131630A1 (en) Aerosol-free vessel for bubbling chemical precursors in a deposition process
US20250293059A1 (en) Vessel for containing precursor
JPH06316765A (ja) 液体原料用気化器
JPH062142A (ja) 液体蒸気原料の供給装置
KR20070117734A (ko) 반도체 소자 제조장비용 챔버 가스 발생장치

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101130

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111003

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20111003

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111025

AA91 Notification that invitation to amend document was cancelled

Free format text: JAPANESE INTERMEDIATE CODE: A971091

Effective date: 20111108

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20111125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111220

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120316

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120326

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120418

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120626

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130730

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130802

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130830

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130904

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130925

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131022

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140519

R150 Certificate of patent or registration of utility model

Ref document number: 5548446

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250