JP5726831B2 - 化学気相堆積のための装置及び方法 - Google Patents
化学気相堆積のための装置及び方法 Download PDFInfo
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- JP5726831B2 JP5726831B2 JP2012226073A JP2012226073A JP5726831B2 JP 5726831 B2 JP5726831 B2 JP 5726831B2 JP 2012226073 A JP2012226073 A JP 2012226073A JP 2012226073 A JP2012226073 A JP 2012226073A JP 5726831 B2 JP5726831 B2 JP 5726831B2
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- Prior art keywords
- sintered metal
- porous sintered
- metal frit
- vapor deposition
- chemical vapor
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- 238000005229 chemical vapour deposition Methods 0.000 title claims description 40
- 238000000034 method Methods 0.000 title description 15
- 239000007788 liquid Substances 0.000 claims description 43
- 239000012159 carrier gas Substances 0.000 claims description 31
- 239000000376 reactant Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 23
- 239000006200 vaporizer Substances 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000003708 ampul Substances 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 3
- 238000009834 vaporization Methods 0.000 claims description 3
- 239000002243 precursor Substances 0.000 description 12
- 239000012705 liquid precursor Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000011344 liquid material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (9)
- チャンバガス入口ポートを有する化学気相堆積チャンバと、該チャンバガス入口ポートに接続された出口ポートを有する液体反応物質気化装置とを備え、該気化装置は、上方部分、下方部分、内側部表面及び底部表面を有する容器を含み、該容器は液体反応物質を含み、上記内側部表面間の間隔は内部容器直径を定め、該気化装置は更に、キャリヤガス源に接続された容器入口ポートと、上記容器の内部直径と実質的に等しい外部直径を有する多孔性燒結金属フリットであって、液体反応物質のレベルより下方で上記容器の上記下方部分へ挿入され且つ該多孔性燒結金属フリットと上記容器の底部との間にプレナムを画成する多孔性燒結金属フリットと、上記容器のガス入口ポート及び上記多孔性燒結金属フリットを通じて延びるガス分配導管と、を含み、
上記プレナムは、上記多孔性燒結金属フリットと上記容器の底部との間のギャップによって画成され、
前記ガス分配導管の出口面が前記多孔性燒結金属フリットの下面上に位置付けられており、
上記多孔性燒結金属フリットと上記容器の底部との間の間隔は、2mmである、化学気相堆積装置。 - 上記多孔性燒結金属フリットは、ステンレス鋼を含む、請求項1に記載の化学気相堆積装置。
- 上記装置は、基板上に膜を形成するように構成される、請求項1に記載の化学気相堆積装置。
- 化学気相堆積反応チャンバと、
気化装置であって、上部部分、底部部分、底部表面、及び内壁部により定められた内部直径を有する閉じた実質的に円筒形のアンプルと、上記上部部分から延びてガス源と流体連通する入口ポートと、上記上部部分から延びて上記反応チャンバと流体連通する出口ポートと、上記底部表面に隣接して上記アンプルの上記内壁部と接触する縁部表面を有し且つ液体反応物質内に沈められた多孔性燒結金属フリットであって、該多孔性燒結金属フリットと上記底部表面との間にある間隔を与えるように取り付けられている多孔性燒結金属フリットと、上記入口ポートから上記多孔性燒結金属フリットを通じて延びるガス分配導管と、を含む気化装置と、を備え、
前記ガス分配導管の出口面が前記多孔性燒結金属フリットの下面上に位置付けられており、
上記多孔性燒結金属フリットと上記底部表面との間の上記間隔は、2mmである、化学気相堆積装置。 - 上記多孔性燒結金属フリットは、ステンレス鋼で形成される、請求項4に記載の化学気相堆積装置。
- 上記多孔性燒結金属フリットは、約14.6cmの直径及び約0.198cmの厚さを有する、請求項1に記載の化学気相堆積装置。
- 上記多孔性燒結金属フリットは、約40ミクロンの細孔サイズを有する、請求項6に記載の化学気相堆積装置。
- 上記多孔性燒結金属フリットは、約14.6cmの直径及び約0.198cmの厚さを有する、請求項4に記載の化学気相堆積装置。
- 上記多孔性燒結金属フリットは、約40ミクロンの細孔サイズを有する、請求項8に記載の化学気相堆積装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79123006P | 2006-04-11 | 2006-04-11 | |
US60/791,230 | 2006-04-11 | ||
US11/697,937 US7967911B2 (en) | 2006-04-11 | 2007-04-09 | Apparatus and methods for chemical vapor deposition |
US11/697,937 | 2007-04-09 |
Related Parent Applications (1)
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JP2009505583A Division JP5548446B2 (ja) | 2006-04-11 | 2007-04-11 | 化学気相堆積のための装置及び方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013040410A JP2013040410A (ja) | 2013-02-28 |
JP5726831B2 true JP5726831B2 (ja) | 2015-06-03 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2009505583A Active JP5548446B2 (ja) | 2006-04-11 | 2007-04-11 | 化学気相堆積のための装置及び方法 |
JP2012226073A Active JP5726831B2 (ja) | 2006-04-11 | 2012-10-11 | 化学気相堆積のための装置及び方法 |
Family Applications Before (1)
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JP2009505583A Active JP5548446B2 (ja) | 2006-04-11 | 2007-04-11 | 化学気相堆積のための装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7967911B2 (ja) |
JP (2) | JP5548446B2 (ja) |
KR (1) | KR101076518B1 (ja) |
CN (1) | CN101426953B (ja) |
DE (1) | DE112007000898T5 (ja) |
WO (1) | WO2007121202A1 (ja) |
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US7967911B2 (en) * | 2006-04-11 | 2011-06-28 | Applied Materials, Inc. | Apparatus and methods for chemical vapor deposition |
US7740816B1 (en) * | 2008-02-06 | 2010-06-22 | Vapor Point, LLC | Method for treating gases to be scrubbed |
US7803337B1 (en) | 2008-02-06 | 2010-09-28 | Vapor Point, LLC | Method for treating a fluid to be scrubbed |
FR2935800B1 (fr) * | 2008-09-09 | 2010-11-19 | R & I Alliance | Procede et dispositif de detection de fuites dans une conduite de liquide souterraine, notamment une conduite d'eau |
US8491720B2 (en) * | 2009-04-10 | 2013-07-23 | Applied Materials, Inc. | HVPE precursor source hardware |
CN102597310B (zh) * | 2009-11-02 | 2015-02-04 | 西格玛-奥吉奇有限责任公司 | 固态前体输送组件以及相关方法 |
KR101084997B1 (ko) * | 2011-06-30 | 2011-11-18 | (주)그랜드 텍 | 캐리어 기체에 의한 화합물 기화용 버블러 |
US8795420B1 (en) * | 2011-07-27 | 2014-08-05 | Vapor Point, LLC | Apparatus for removing unwanted contaminates from gases |
CN103975417B (zh) * | 2011-11-10 | 2017-09-01 | 圣戈班晶体及检测公司 | 用于半导体晶体材料形成的系统 |
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TWI624554B (zh) * | 2015-08-21 | 2018-05-21 | 弗里松股份有限公司 | 蒸發源 |
US10982319B2 (en) | 2015-08-21 | 2021-04-20 | Flisom Ag | Homogeneous linear evaporation source |
US10480070B2 (en) * | 2016-05-12 | 2019-11-19 | Versum Materials Us, Llc | Delivery container with flow distributor |
US10557203B2 (en) | 2016-12-12 | 2020-02-11 | Applied Materials, Inc. | Temperature control system and process for gaseous precursor delivery |
CN110475905A (zh) | 2017-03-03 | 2019-11-19 | 应用材料公司 | 用于增加来自安瓿的通量的设备 |
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-
2007
- 2007-04-09 US US11/697,937 patent/US7967911B2/en active Active
- 2007-04-11 JP JP2009505583A patent/JP5548446B2/ja active Active
- 2007-04-11 DE DE112007000898T patent/DE112007000898T5/de not_active Withdrawn
- 2007-04-11 KR KR1020087027234A patent/KR101076518B1/ko not_active IP Right Cessation
- 2007-04-11 WO PCT/US2007/066366 patent/WO2007121202A1/en active Application Filing
- 2007-04-11 CN CN2007800129307A patent/CN101426953B/zh not_active Expired - Fee Related
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2011
- 2011-05-17 US US13/109,533 patent/US8313804B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
DE112007000898T5 (de) | 2009-05-07 |
JP5548446B2 (ja) | 2014-07-16 |
CN101426953A (zh) | 2009-05-06 |
JP2009533556A (ja) | 2009-09-17 |
US7967911B2 (en) | 2011-06-28 |
KR101076518B1 (ko) | 2011-10-24 |
US20110217466A1 (en) | 2011-09-08 |
KR20080108350A (ko) | 2008-12-12 |
US20080014350A1 (en) | 2008-01-17 |
JP2013040410A (ja) | 2013-02-28 |
WO2007121202A1 (en) | 2007-10-25 |
CN101426953B (zh) | 2012-05-30 |
US8313804B2 (en) | 2012-11-20 |
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