JP5542802B2 - 複数のスペクトルを使用する化学機械研磨での終点検出 - Google Patents
複数のスペクトルを使用する化学機械研磨での終点検出 Download PDFInfo
- Publication number
- JP5542802B2 JP5542802B2 JP2011507606A JP2011507606A JP5542802B2 JP 5542802 B2 JP5542802 B2 JP 5542802B2 JP 2011507606 A JP2011507606 A JP 2011507606A JP 2011507606 A JP2011507606 A JP 2011507606A JP 5542802 B2 JP5542802 B2 JP 5542802B2
- Authority
- JP
- Japan
- Prior art keywords
- spectrum
- substrate
- polishing
- spectra
- determining whether
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4996508P | 2008-05-02 | 2008-05-02 | |
US61/049,965 | 2008-05-02 | ||
PCT/US2009/042085 WO2009134865A2 (en) | 2008-05-02 | 2009-04-29 | Endpoint detection in chemical mechanical polishing using multiple spectra |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011520264A JP2011520264A (ja) | 2011-07-14 |
JP2011520264A5 JP2011520264A5 (enrdf_load_stackoverflow) | 2012-06-21 |
JP5542802B2 true JP5542802B2 (ja) | 2014-07-09 |
Family
ID=41255749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011507606A Active JP5542802B2 (ja) | 2008-05-02 | 2009-04-29 | 複数のスペクトルを使用する化学機械研磨での終点検出 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090275265A1 (enrdf_load_stackoverflow) |
JP (1) | JP5542802B2 (enrdf_load_stackoverflow) |
KR (2) | KR101619374B1 (enrdf_load_stackoverflow) |
CN (2) | CN103537975A (enrdf_load_stackoverflow) |
WO (1) | WO2009134865A2 (enrdf_load_stackoverflow) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8392012B2 (en) * | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
TWI496661B (zh) * | 2010-04-28 | 2015-08-21 | Applied Materials Inc | 用於光學監測之參考光譜的自動產生 |
US9579767B2 (en) | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
KR101774031B1 (ko) * | 2010-05-05 | 2017-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 종료점 검출을 위한 스펙트럼 피쳐들의 동적 또는 적응 트랙킹 |
US8666665B2 (en) | 2010-06-07 | 2014-03-04 | Applied Materials, Inc. | Automatic initiation of reference spectra library generation for optical monitoring |
US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
TW201223702A (en) * | 2010-08-06 | 2012-06-16 | Applied Materials Inc | Techniques for matching measured spectra to reference spectra for in-situ optical monitoring |
US8535115B2 (en) | 2011-01-28 | 2013-09-17 | Applied Materials, Inc. | Gathering spectra from multiple optical heads |
US8547538B2 (en) * | 2011-04-21 | 2013-10-01 | Applied Materials, Inc. | Construction of reference spectra with variations in environmental effects |
US8755928B2 (en) | 2011-04-27 | 2014-06-17 | Applied Materials, Inc. | Automatic selection of reference spectra library |
WO2012148716A2 (en) * | 2011-04-28 | 2012-11-01 | Applied Materials, Inc. | Varying coefficients and functions for polishing control |
US20140024293A1 (en) * | 2012-07-19 | 2014-01-23 | Jimin Zhang | Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing |
US8808059B1 (en) | 2013-02-27 | 2014-08-19 | Applied Materials, Inc. | Spectraphic monitoring based on pre-screening of theoretical library |
CN103887206B (zh) * | 2014-04-02 | 2017-05-31 | 中国电子科技集团公司第四十五研究所 | 化学机械平坦化终点检测方法及装置 |
US20160033958A1 (en) * | 2014-08-01 | 2016-02-04 | Globalfoundries Inc. | Endpoint determination using individually measured target spectra |
JP6399873B2 (ja) * | 2014-09-17 | 2018-10-03 | 株式会社荏原製作所 | 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 |
CN105057712B (zh) * | 2015-08-24 | 2019-04-23 | 佛山新成洪鼎机械技术有限公司 | 轴自动定位深孔盲孔加工机床 |
TWI779986B (zh) * | 2016-11-30 | 2022-10-01 | 美商應用材料股份有限公司 | 使用神經網路的光譜監測 |
JP7532262B2 (ja) | 2018-06-28 | 2024-08-13 | アプライド マテリアルズ インコーポレイテッド | 分光画像モニタリングのための機械学習システム向けのトレーニングスペクトルの生成 |
Family Cites Families (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5747380A (en) * | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
US5770948A (en) * | 1996-03-19 | 1998-06-23 | International Business Machines Corporation | Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool |
US6489624B1 (en) * | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
JP4460659B2 (ja) * | 1997-10-22 | 2010-05-12 | 株式会社ルネサステクノロジ | 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置 |
TW374050B (en) * | 1997-10-31 | 1999-11-11 | Applied Materials Inc | Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing |
JPH11325840A (ja) * | 1998-05-19 | 1999-11-26 | Dainippon Screen Mfg Co Ltd | メタル残膜判定方法およびメタル残膜判定装置 |
US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
US6106662A (en) | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
TW398036B (en) * | 1998-08-18 | 2000-07-11 | Promos Technologies Inc | Method of monitoring of chemical mechanical polishing end point and uniformity |
IL125964A (en) * | 1998-08-27 | 2003-10-31 | Tevet Process Control Technolo | Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate |
US6159073A (en) * | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
WO2000026613A1 (en) * | 1998-11-02 | 2000-05-11 | Applied Materials, Inc. | Optical monitoring of radial ranges in chemical mechanical polishing a metal layer on a substrate |
US6908374B2 (en) * | 1998-12-01 | 2005-06-21 | Nutool, Inc. | Chemical mechanical polishing endpoint detection |
US6184985B1 (en) * | 1998-12-11 | 2001-02-06 | Filmetrics, Inc. | Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources |
US6172756B1 (en) * | 1998-12-11 | 2001-01-09 | Filmetrics, Inc. | Rapid and accurate end point detection in a noisy environment |
US6204922B1 (en) * | 1998-12-11 | 2001-03-20 | Filmetrics, Inc. | Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample |
US6190234B1 (en) * | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
US6334807B1 (en) * | 1999-04-30 | 2002-01-01 | International Business Machines Corporation | Chemical mechanical polishing in-situ end point system |
JP3327289B2 (ja) * | 2000-03-29 | 2002-09-24 | 株式会社ニコン | 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体 |
WO2000071971A1 (en) * | 1999-05-24 | 2000-11-30 | Luxtron Corporation | Optical techniques for measuring layer thicknesses |
US6358327B1 (en) * | 1999-06-29 | 2002-03-19 | Applied Materials, Inc. | Method for endpoint detection using throttle valve position |
US6340602B1 (en) * | 1999-12-10 | 2002-01-22 | Sensys Instruments | Method of measuring meso-scale structures on wafers |
JP3259225B2 (ja) * | 1999-12-27 | 2002-02-25 | 株式会社ニコン | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
JP3506114B2 (ja) * | 2000-01-25 | 2004-03-15 | 株式会社ニコン | モニタ装置及びこのモニタ装置を具えた研磨装置及び研磨方法 |
JP2004514273A (ja) * | 2000-07-31 | 2004-05-13 | エイエスエムエル ユーエス インコーポレイテッド | 化学機械研磨における終点検出のための原位置方法及び装置 |
JP2004507719A (ja) * | 2000-08-10 | 2004-03-11 | サーマ−ウェーブ・インコーポレイテッド | 回折微細構造の光学的測定のためのデータベース補間方法 |
US6511363B2 (en) * | 2000-12-27 | 2003-01-28 | Tokyo Seimitsu Co., Ltd. | Polishing end point detecting device for wafer polishing apparatus |
US6819426B2 (en) * | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
JP3946470B2 (ja) * | 2001-03-12 | 2007-07-18 | 株式会社デンソー | 半導体層の膜厚測定方法及び半導体基板の製造方法 |
US6812478B2 (en) * | 2001-03-19 | 2004-11-02 | Lam Research Corporation | In-situ detection of thin-metal interface using optical interference via a dynamically updated reference |
US6676482B2 (en) * | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
US6762838B2 (en) * | 2001-07-02 | 2004-07-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for production line screening |
JP3932836B2 (ja) * | 2001-07-27 | 2007-06-20 | 株式会社日立製作所 | 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法 |
US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
US6618130B2 (en) * | 2001-08-28 | 2003-09-09 | Speedfam-Ipec Corporation | Method and apparatus for optical endpoint detection during chemical mechanical polishing |
US6898596B2 (en) * | 2001-10-23 | 2005-05-24 | Therma-Wave, Inc. | Evolution of library data sets |
US6678055B2 (en) * | 2001-11-26 | 2004-01-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for measuring stress in semiconductor wafers |
US6939198B1 (en) * | 2001-12-28 | 2005-09-06 | Applied Materials, Inc. | Polishing system with in-line and in-situ metrology |
US6942546B2 (en) * | 2002-01-17 | 2005-09-13 | Asm Nutool, Inc. | Endpoint detection for non-transparent polishing member |
US6813034B2 (en) * | 2002-02-05 | 2004-11-02 | Therma-Wave, Inc. | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements |
US6609086B1 (en) * | 2002-02-12 | 2003-08-19 | Timbre Technologies, Inc. | Profile refinement for integrated circuit metrology |
US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
US20040007325A1 (en) * | 2002-06-11 | 2004-01-15 | Applied Materials, Inc. | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
US6947135B2 (en) * | 2002-07-01 | 2005-09-20 | Therma-Wave, Inc. | Reduced multicubic database interpolation method for optical measurement of diffractive microstructures |
US20040018647A1 (en) * | 2002-07-02 | 2004-01-29 | Applied Materials, Inc. | Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry |
US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
JP4542324B2 (ja) * | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | 研磨状態監視装置及びポリッシング装置 |
US6885467B2 (en) * | 2002-10-28 | 2005-04-26 | Tevet Process Control Technologies Ltd. | Method and apparatus for thickness decomposition of complicated layer structures |
US7265382B2 (en) * | 2002-11-12 | 2007-09-04 | Applied Materials, Inc. | Method and apparatus employing integrated metrology for improved dielectric etch efficiency |
CN100349267C (zh) * | 2002-11-27 | 2007-11-14 | 东洋橡胶工业株式会社 | 研磨垫及半导体器件的制造方法 |
IL153894A (en) * | 2003-01-12 | 2010-05-31 | Nova Measuring Instr Ltd | Method and system for measuring the thickness of thin conductive layers |
US7049156B2 (en) * | 2003-03-19 | 2006-05-23 | Verity Instruments, Inc. | System and method for in-situ monitor and control of film thickness and trench depth |
JP2004363201A (ja) * | 2003-06-03 | 2004-12-24 | Matsushita Electric Ind Co Ltd | ウェハの研磨方法および研磨装置 |
US7008296B2 (en) * | 2003-06-18 | 2006-03-07 | Applied Materials, Inc. | Data processing for monitoring chemical mechanical polishing |
US20050026542A1 (en) * | 2003-07-31 | 2005-02-03 | Tezer Battal | Detection system for chemical-mechanical planarization tool |
US7097537B1 (en) * | 2003-08-18 | 2006-08-29 | Applied Materials, Inc. | Determination of position of sensor measurements during polishing |
JP4464642B2 (ja) * | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
WO2005072332A2 (en) * | 2004-01-26 | 2005-08-11 | Tbw Industries, Inc. | Chemical mechanical planarization process control utilizing in-situ conditioning process |
US7255771B2 (en) * | 2004-03-26 | 2007-08-14 | Applied Materials, Inc. | Multiple zone carrier head with flexible membrane |
JP5017765B2 (ja) * | 2004-03-30 | 2012-09-05 | 日本電気株式会社 | 光変調器とその製造方法並びに変調光学系とこれを用いた光インターコネクト装置並びに光通信装置 |
US7120553B2 (en) * | 2004-07-22 | 2006-10-10 | Applied Materials, Inc. | Iso-reflectance wavelengths |
US7393459B2 (en) * | 2004-08-06 | 2008-07-01 | Applied Materials, Inc. | Method for automatic determination of substrates states in plasma processing chambers |
US7764377B2 (en) * | 2005-08-22 | 2010-07-27 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
WO2007024807A2 (en) * | 2005-08-22 | 2007-03-01 | Applied Materials, Inc. | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
US7409260B2 (en) * | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
US7406394B2 (en) * | 2005-08-22 | 2008-07-29 | Applied Materials, Inc. | Spectra based endpointing for chemical mechanical polishing |
US20070077671A1 (en) * | 2005-10-03 | 2007-04-05 | Applied Materials | In-situ substrate imaging |
US7277819B2 (en) * | 2005-10-31 | 2007-10-02 | Eastman Kodak Company | Measuring layer thickness or composition changes |
CN102490112B (zh) * | 2006-10-06 | 2015-03-25 | 株式会社荏原制作所 | 加工终点检测方法、研磨方法及研磨装置 |
US7998358B2 (en) * | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
US7612873B2 (en) * | 2006-11-13 | 2009-11-03 | Dainippon Screen Mfg. Co., Ltd. | Surface form measuring apparatus and stress measuring apparatus and surface form measuring method and stress measuring method |
US7444198B2 (en) * | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
KR101678082B1 (ko) * | 2007-02-23 | 2016-11-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 |
US7663766B2 (en) * | 2007-09-05 | 2010-02-16 | Advanced Micro Devices, Inc. | Incorporating film optical property measurements into scatterometry metrology |
US20100114532A1 (en) * | 2008-11-03 | 2010-05-06 | Applied Materials, Inc. | Weighted spectrographic monitoring of a substrate during processing |
CN101509741A (zh) | 2009-03-19 | 2009-08-19 | 上海交通大学 | 换热器翅片以及翅片管式热交换器 |
-
2009
- 2009-04-28 US US12/431,532 patent/US20090275265A1/en not_active Abandoned
- 2009-04-29 CN CN201310496357.9A patent/CN103537975A/zh active Pending
- 2009-04-29 JP JP2011507606A patent/JP5542802B2/ja active Active
- 2009-04-29 WO PCT/US2009/042085 patent/WO2009134865A2/en active Application Filing
- 2009-04-29 KR KR1020107027159A patent/KR101619374B1/ko active Active
- 2009-04-29 KR KR1020167010766A patent/KR20160052769A/ko not_active Ceased
- 2009-04-29 CN CN2009801165583A patent/CN102017094B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102017094B (zh) | 2013-11-20 |
KR101619374B1 (ko) | 2016-05-10 |
KR20110021842A (ko) | 2011-03-04 |
CN103537975A (zh) | 2014-01-29 |
KR20160052769A (ko) | 2016-05-12 |
WO2009134865A3 (en) | 2010-02-18 |
WO2009134865A2 (en) | 2009-11-05 |
JP2011520264A (ja) | 2011-07-14 |
US20090275265A1 (en) | 2009-11-05 |
CN102017094A (zh) | 2011-04-13 |
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