KR101619374B1 - 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 - Google Patents
다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 Download PDFInfo
- Publication number
- KR101619374B1 KR101619374B1 KR1020107027159A KR20107027159A KR101619374B1 KR 101619374 B1 KR101619374 B1 KR 101619374B1 KR 1020107027159 A KR1020107027159 A KR 1020107027159A KR 20107027159 A KR20107027159 A KR 20107027159A KR 101619374 B1 KR101619374 B1 KR 101619374B1
- Authority
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- South Korea
- Prior art keywords
- spectra
- polishing
- end point
- substrate
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000001228 spectrum Methods 0.000 title claims abstract description 164
- 238000005498 polishing Methods 0.000 title claims abstract description 111
- 239000000126 substance Substances 0.000 title claims description 20
- 238000001514 detection method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 47
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000012544 monitoring process Methods 0.000 claims abstract description 18
- 238000011065 in-situ storage Methods 0.000 claims abstract description 12
- 238000012545 processing Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 description 9
- 238000004590 computer program Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
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- 239000000463 material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
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- 230000001052 transient effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000002783 friction material Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
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- 230000000644 propagated effect Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4996508P | 2008-05-02 | 2008-05-02 | |
US61/049,965 | 2008-05-02 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020167010766A Division KR20160052769A (ko) | 2008-05-02 | 2009-04-29 | 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110021842A KR20110021842A (ko) | 2011-03-04 |
KR101619374B1 true KR101619374B1 (ko) | 2016-05-10 |
Family
ID=41255749
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020107027159A Active KR101619374B1 (ko) | 2008-05-02 | 2009-04-29 | 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 |
KR1020167010766A Ceased KR20160052769A (ko) | 2008-05-02 | 2009-04-29 | 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020167010766A Ceased KR20160052769A (ko) | 2008-05-02 | 2009-04-29 | 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090275265A1 (enrdf_load_stackoverflow) |
JP (1) | JP5542802B2 (enrdf_load_stackoverflow) |
KR (2) | KR101619374B1 (enrdf_load_stackoverflow) |
CN (2) | CN103537975A (enrdf_load_stackoverflow) |
WO (1) | WO2009134865A2 (enrdf_load_stackoverflow) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8392012B2 (en) * | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
TWI496661B (zh) * | 2010-04-28 | 2015-08-21 | Applied Materials Inc | 用於光學監測之參考光譜的自動產生 |
US9579767B2 (en) | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
KR101774031B1 (ko) * | 2010-05-05 | 2017-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 종료점 검출을 위한 스펙트럼 피쳐들의 동적 또는 적응 트랙킹 |
US8666665B2 (en) | 2010-06-07 | 2014-03-04 | Applied Materials, Inc. | Automatic initiation of reference spectra library generation for optical monitoring |
US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
TW201223702A (en) * | 2010-08-06 | 2012-06-16 | Applied Materials Inc | Techniques for matching measured spectra to reference spectra for in-situ optical monitoring |
US8535115B2 (en) | 2011-01-28 | 2013-09-17 | Applied Materials, Inc. | Gathering spectra from multiple optical heads |
US8547538B2 (en) * | 2011-04-21 | 2013-10-01 | Applied Materials, Inc. | Construction of reference spectra with variations in environmental effects |
US8755928B2 (en) | 2011-04-27 | 2014-06-17 | Applied Materials, Inc. | Automatic selection of reference spectra library |
WO2012148716A2 (en) * | 2011-04-28 | 2012-11-01 | Applied Materials, Inc. | Varying coefficients and functions for polishing control |
US20140024293A1 (en) * | 2012-07-19 | 2014-01-23 | Jimin Zhang | Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing |
US8808059B1 (en) | 2013-02-27 | 2014-08-19 | Applied Materials, Inc. | Spectraphic monitoring based on pre-screening of theoretical library |
CN103887206B (zh) * | 2014-04-02 | 2017-05-31 | 中国电子科技集团公司第四十五研究所 | 化学机械平坦化终点检测方法及装置 |
US20160033958A1 (en) * | 2014-08-01 | 2016-02-04 | Globalfoundries Inc. | Endpoint determination using individually measured target spectra |
JP6399873B2 (ja) * | 2014-09-17 | 2018-10-03 | 株式会社荏原製作所 | 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 |
CN105057712B (zh) * | 2015-08-24 | 2019-04-23 | 佛山新成洪鼎机械技术有限公司 | 轴自动定位深孔盲孔加工机床 |
TWI779986B (zh) * | 2016-11-30 | 2022-10-01 | 美商應用材料股份有限公司 | 使用神經網路的光譜監測 |
JP7532262B2 (ja) | 2018-06-28 | 2024-08-13 | アプライド マテリアルズ インコーポレイテッド | 分光画像モニタリングのための機械学習システム向けのトレーニングスペクトルの生成 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002517911A (ja) | 1998-06-08 | 2002-06-18 | スピードファム−アイピーイーシー コーポレイション | 化学機械的研磨の終了点を検出する方法および装置 |
JP2010223578A (ja) | 2009-03-19 | 2010-10-07 | Shanghai Jiao Tong Univ | 熱交換器用フィン及び熱交換器 |
Family Cites Families (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5747380A (en) * | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
US5770948A (en) * | 1996-03-19 | 1998-06-23 | International Business Machines Corporation | Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool |
US6489624B1 (en) * | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
JP4460659B2 (ja) * | 1997-10-22 | 2010-05-12 | 株式会社ルネサステクノロジ | 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置 |
TW374050B (en) * | 1997-10-31 | 1999-11-11 | Applied Materials Inc | Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing |
JPH11325840A (ja) * | 1998-05-19 | 1999-11-26 | Dainippon Screen Mfg Co Ltd | メタル残膜判定方法およびメタル残膜判定装置 |
US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
TW398036B (en) * | 1998-08-18 | 2000-07-11 | Promos Technologies Inc | Method of monitoring of chemical mechanical polishing end point and uniformity |
IL125964A (en) * | 1998-08-27 | 2003-10-31 | Tevet Process Control Technolo | Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate |
US6159073A (en) * | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
WO2000026613A1 (en) * | 1998-11-02 | 2000-05-11 | Applied Materials, Inc. | Optical monitoring of radial ranges in chemical mechanical polishing a metal layer on a substrate |
US6908374B2 (en) * | 1998-12-01 | 2005-06-21 | Nutool, Inc. | Chemical mechanical polishing endpoint detection |
US6184985B1 (en) * | 1998-12-11 | 2001-02-06 | Filmetrics, Inc. | Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources |
US6172756B1 (en) * | 1998-12-11 | 2001-01-09 | Filmetrics, Inc. | Rapid and accurate end point detection in a noisy environment |
US6204922B1 (en) * | 1998-12-11 | 2001-03-20 | Filmetrics, Inc. | Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample |
US6190234B1 (en) * | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
US6334807B1 (en) * | 1999-04-30 | 2002-01-01 | International Business Machines Corporation | Chemical mechanical polishing in-situ end point system |
JP3327289B2 (ja) * | 2000-03-29 | 2002-09-24 | 株式会社ニコン | 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体 |
WO2000071971A1 (en) * | 1999-05-24 | 2000-11-30 | Luxtron Corporation | Optical techniques for measuring layer thicknesses |
US6358327B1 (en) * | 1999-06-29 | 2002-03-19 | Applied Materials, Inc. | Method for endpoint detection using throttle valve position |
US6340602B1 (en) * | 1999-12-10 | 2002-01-22 | Sensys Instruments | Method of measuring meso-scale structures on wafers |
JP3259225B2 (ja) * | 1999-12-27 | 2002-02-25 | 株式会社ニコン | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
JP3506114B2 (ja) * | 2000-01-25 | 2004-03-15 | 株式会社ニコン | モニタ装置及びこのモニタ装置を具えた研磨装置及び研磨方法 |
JP2004514273A (ja) * | 2000-07-31 | 2004-05-13 | エイエスエムエル ユーエス インコーポレイテッド | 化学機械研磨における終点検出のための原位置方法及び装置 |
JP2004507719A (ja) * | 2000-08-10 | 2004-03-11 | サーマ−ウェーブ・インコーポレイテッド | 回折微細構造の光学的測定のためのデータベース補間方法 |
US6511363B2 (en) * | 2000-12-27 | 2003-01-28 | Tokyo Seimitsu Co., Ltd. | Polishing end point detecting device for wafer polishing apparatus |
US6819426B2 (en) * | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
JP3946470B2 (ja) * | 2001-03-12 | 2007-07-18 | 株式会社デンソー | 半導体層の膜厚測定方法及び半導体基板の製造方法 |
US6812478B2 (en) * | 2001-03-19 | 2004-11-02 | Lam Research Corporation | In-situ detection of thin-metal interface using optical interference via a dynamically updated reference |
US6676482B2 (en) * | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
US6762838B2 (en) * | 2001-07-02 | 2004-07-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for production line screening |
JP3932836B2 (ja) * | 2001-07-27 | 2007-06-20 | 株式会社日立製作所 | 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法 |
US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
US6618130B2 (en) * | 2001-08-28 | 2003-09-09 | Speedfam-Ipec Corporation | Method and apparatus for optical endpoint detection during chemical mechanical polishing |
US6898596B2 (en) * | 2001-10-23 | 2005-05-24 | Therma-Wave, Inc. | Evolution of library data sets |
US6678055B2 (en) * | 2001-11-26 | 2004-01-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for measuring stress in semiconductor wafers |
US6939198B1 (en) * | 2001-12-28 | 2005-09-06 | Applied Materials, Inc. | Polishing system with in-line and in-situ metrology |
US6942546B2 (en) * | 2002-01-17 | 2005-09-13 | Asm Nutool, Inc. | Endpoint detection for non-transparent polishing member |
US6813034B2 (en) * | 2002-02-05 | 2004-11-02 | Therma-Wave, Inc. | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements |
US6609086B1 (en) * | 2002-02-12 | 2003-08-19 | Timbre Technologies, Inc. | Profile refinement for integrated circuit metrology |
US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
US20040007325A1 (en) * | 2002-06-11 | 2004-01-15 | Applied Materials, Inc. | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
US6947135B2 (en) * | 2002-07-01 | 2005-09-20 | Therma-Wave, Inc. | Reduced multicubic database interpolation method for optical measurement of diffractive microstructures |
US20040018647A1 (en) * | 2002-07-02 | 2004-01-29 | Applied Materials, Inc. | Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry |
US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
JP4542324B2 (ja) * | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | 研磨状態監視装置及びポリッシング装置 |
US6885467B2 (en) * | 2002-10-28 | 2005-04-26 | Tevet Process Control Technologies Ltd. | Method and apparatus for thickness decomposition of complicated layer structures |
US7265382B2 (en) * | 2002-11-12 | 2007-09-04 | Applied Materials, Inc. | Method and apparatus employing integrated metrology for improved dielectric etch efficiency |
CN100349267C (zh) * | 2002-11-27 | 2007-11-14 | 东洋橡胶工业株式会社 | 研磨垫及半导体器件的制造方法 |
IL153894A (en) * | 2003-01-12 | 2010-05-31 | Nova Measuring Instr Ltd | Method and system for measuring the thickness of thin conductive layers |
US7049156B2 (en) * | 2003-03-19 | 2006-05-23 | Verity Instruments, Inc. | System and method for in-situ monitor and control of film thickness and trench depth |
JP2004363201A (ja) * | 2003-06-03 | 2004-12-24 | Matsushita Electric Ind Co Ltd | ウェハの研磨方法および研磨装置 |
US7008296B2 (en) * | 2003-06-18 | 2006-03-07 | Applied Materials, Inc. | Data processing for monitoring chemical mechanical polishing |
US20050026542A1 (en) * | 2003-07-31 | 2005-02-03 | Tezer Battal | Detection system for chemical-mechanical planarization tool |
US7097537B1 (en) * | 2003-08-18 | 2006-08-29 | Applied Materials, Inc. | Determination of position of sensor measurements during polishing |
JP4464642B2 (ja) * | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
WO2005072332A2 (en) * | 2004-01-26 | 2005-08-11 | Tbw Industries, Inc. | Chemical mechanical planarization process control utilizing in-situ conditioning process |
US7255771B2 (en) * | 2004-03-26 | 2007-08-14 | Applied Materials, Inc. | Multiple zone carrier head with flexible membrane |
JP5017765B2 (ja) * | 2004-03-30 | 2012-09-05 | 日本電気株式会社 | 光変調器とその製造方法並びに変調光学系とこれを用いた光インターコネクト装置並びに光通信装置 |
US7120553B2 (en) * | 2004-07-22 | 2006-10-10 | Applied Materials, Inc. | Iso-reflectance wavelengths |
US7393459B2 (en) * | 2004-08-06 | 2008-07-01 | Applied Materials, Inc. | Method for automatic determination of substrates states in plasma processing chambers |
US7764377B2 (en) * | 2005-08-22 | 2010-07-27 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
WO2007024807A2 (en) * | 2005-08-22 | 2007-03-01 | Applied Materials, Inc. | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
US7409260B2 (en) * | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
US7406394B2 (en) * | 2005-08-22 | 2008-07-29 | Applied Materials, Inc. | Spectra based endpointing for chemical mechanical polishing |
US20070077671A1 (en) * | 2005-10-03 | 2007-04-05 | Applied Materials | In-situ substrate imaging |
US7277819B2 (en) * | 2005-10-31 | 2007-10-02 | Eastman Kodak Company | Measuring layer thickness or composition changes |
CN102490112B (zh) * | 2006-10-06 | 2015-03-25 | 株式会社荏原制作所 | 加工终点检测方法、研磨方法及研磨装置 |
US7998358B2 (en) * | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
US7612873B2 (en) * | 2006-11-13 | 2009-11-03 | Dainippon Screen Mfg. Co., Ltd. | Surface form measuring apparatus and stress measuring apparatus and surface form measuring method and stress measuring method |
US7444198B2 (en) * | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
KR101678082B1 (ko) * | 2007-02-23 | 2016-11-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 |
US7663766B2 (en) * | 2007-09-05 | 2010-02-16 | Advanced Micro Devices, Inc. | Incorporating film optical property measurements into scatterometry metrology |
US20100114532A1 (en) * | 2008-11-03 | 2010-05-06 | Applied Materials, Inc. | Weighted spectrographic monitoring of a substrate during processing |
-
2009
- 2009-04-28 US US12/431,532 patent/US20090275265A1/en not_active Abandoned
- 2009-04-29 CN CN201310496357.9A patent/CN103537975A/zh active Pending
- 2009-04-29 JP JP2011507606A patent/JP5542802B2/ja active Active
- 2009-04-29 WO PCT/US2009/042085 patent/WO2009134865A2/en active Application Filing
- 2009-04-29 KR KR1020107027159A patent/KR101619374B1/ko active Active
- 2009-04-29 KR KR1020167010766A patent/KR20160052769A/ko not_active Ceased
- 2009-04-29 CN CN2009801165583A patent/CN102017094B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002517911A (ja) | 1998-06-08 | 2002-06-18 | スピードファム−アイピーイーシー コーポレイション | 化学機械的研磨の終了点を検出する方法および装置 |
JP2010223578A (ja) | 2009-03-19 | 2010-10-07 | Shanghai Jiao Tong Univ | 熱交換器用フィン及び熱交換器 |
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CN102017094B (zh) | 2013-11-20 |
KR20110021842A (ko) | 2011-03-04 |
CN103537975A (zh) | 2014-01-29 |
KR20160052769A (ko) | 2016-05-12 |
JP5542802B2 (ja) | 2014-07-09 |
WO2009134865A3 (en) | 2010-02-18 |
WO2009134865A2 (en) | 2009-11-05 |
JP2011520264A (ja) | 2011-07-14 |
US20090275265A1 (en) | 2009-11-05 |
CN102017094A (zh) | 2011-04-13 |
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