JP5540487B2 - 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 - Google Patents

熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Download PDF

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Publication number
JP5540487B2
JP5540487B2 JP2008245774A JP2008245774A JP5540487B2 JP 5540487 B2 JP5540487 B2 JP 5540487B2 JP 2008245774 A JP2008245774 A JP 2008245774A JP 2008245774 A JP2008245774 A JP 2008245774A JP 5540487 B2 JP5540487 B2 JP 5540487B2
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Japan
Prior art keywords
resin composition
group
optical semiconductor
compound
light reflecting
Prior art date
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JP2008245774A
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English (en)
Japanese (ja)
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JP2009097005A (ja
JP2009097005A5 (enExample
Inventor
勇人 小谷
直之 浦崎
真人 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Priority to JP2008245774A priority Critical patent/JP5540487B2/ja
Publication of JP2009097005A publication Critical patent/JP2009097005A/ja
Publication of JP2009097005A5 publication Critical patent/JP2009097005A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
JP2008245774A 2007-09-25 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Active JP5540487B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008245774A JP5540487B2 (ja) 2007-09-25 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007247027 2007-09-25
JP2007247027 2007-09-25
JP2008245774A JP5540487B2 (ja) 2007-09-25 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Publications (3)

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JP2009097005A JP2009097005A (ja) 2009-05-07
JP2009097005A5 JP2009097005A5 (enExample) 2011-12-08
JP5540487B2 true JP5540487B2 (ja) 2014-07-02

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EP2540776B1 (en) 2007-09-25 2017-08-09 Hitachi Chemical Co., Ltd. Thermosetting light-reflecting resin composition, optical semiconductor element mounting board produced therewith, method for manufacture thereof, and optical semiconductor device
JP5572936B2 (ja) * 2007-11-26 2014-08-20 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP2011074355A (ja) * 2009-09-07 2011-04-14 Nitto Denko Corp 光半導体装置用樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
JP5671812B2 (ja) * 2010-03-01 2015-02-18 日立化成株式会社 ウレタン樹脂組成物、硬化体及び硬化体を用いた光半導体装置
JP2012092309A (ja) * 2010-09-29 2012-05-17 Shikoku Chem Corp エポキシ樹脂組成物
KR101242725B1 (ko) 2010-11-23 2013-03-12 (주)네오빛 광반사용 열경화성 수지 조성물
JP2012172012A (ja) * 2011-02-18 2012-09-10 Shin-Etsu Chemical Co Ltd 熱硬化性エポキシ樹脂組成物及び光半導体装置
JP2014517110A (ja) * 2011-05-18 2014-07-17 株式會社ネペスエーエムシー 熱硬化型光反射用樹脂組成物及びその製造方法、熱硬化型光反射用樹脂組成物によって製造された光半導体素子搭載用反射板及びそれを含む光半導体装置
JP5834560B2 (ja) * 2011-07-12 2015-12-24 日立化成株式会社 エポキシ樹脂硬化剤、エポキシ樹脂組成物及び光半導体装置
JP5917137B2 (ja) * 2011-12-27 2016-05-11 株式会社カネカ 表面実装型発光装置用樹脂成形体およびそれを用いた発光装置
JP2013135119A (ja) * 2011-12-27 2013-07-08 Kaneka Corp 表面実装型発光装置用樹脂成形体およびそれを用いた発光装置
JP2012162729A (ja) * 2012-04-11 2012-08-30 Hitachi Chemical Co Ltd 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP2015211112A (ja) * 2014-04-25 2015-11-24 株式会社カネカ 発光ダイオード用硬化性樹脂組成物、発光ダイオードのパッケージ
JP5899281B2 (ja) * 2014-07-16 2016-04-06 積水化学工業株式会社 光半導体装置用白色硬化性組成物、光半導体装置用白色硬化性組成物の製造方法、光半導体装置用成型体及び光半導体装置
GB201416670D0 (en) * 2014-09-22 2014-11-05 Hexcel Composites Ltd Fast curing compositions
KR102309169B1 (ko) * 2014-09-25 2021-10-08 디아이씨 가부시끼가이샤 에폭시 수지 조성물, 경화물, 섬유 강화 복합 재료, 섬유 강화 수지 성형품, 및 섬유 강화 수지 성형품의 제조 방법
JP6724634B2 (ja) * 2016-07-28 2020-07-15 日亜化学工業株式会社 発光装置の製造方法

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* Cited by examiner, † Cited by third party
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US5037898A (en) * 1990-02-27 1991-08-06 Shell Oil Company Polysiloxane-polylactone block copolymer modified thermostat compositions
JP3334998B2 (ja) * 1994-03-30 2002-10-15 住友ベークライト株式会社 エポキシ樹脂組成物
JP2000281750A (ja) * 1999-03-31 2000-10-10 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP3870825B2 (ja) * 2002-02-27 2007-01-24 日立化成工業株式会社 封止用エポキシ樹脂成形材料及び電子部品装置
JP5060707B2 (ja) * 2004-11-10 2012-10-31 日立化成工業株式会社 光反射用熱硬化性樹脂組成物
EP2768031B1 (en) * 2005-08-04 2021-02-17 Nichia Corporation Light-emitting device
JP5303097B2 (ja) * 2005-10-07 2013-10-02 日立化成株式会社 熱硬化性光反射用樹脂組成物、ならびにこれを用いた光半導体搭載用基板とその製造方法および光半導体装置。
JP4968258B2 (ja) * 2006-06-02 2012-07-04 日立化成工業株式会社 光半導体素子搭載用パッケージおよびこれを用いた光半導体装置
JP5239688B2 (ja) * 2007-11-13 2013-07-17 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

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