JP5539882B2 - 蒸着のための供給装置 - Google Patents
蒸着のための供給装置 Download PDFInfo
- Publication number
- JP5539882B2 JP5539882B2 JP2010526932A JP2010526932A JP5539882B2 JP 5539882 B2 JP5539882 B2 JP 5539882B2 JP 2010526932 A JP2010526932 A JP 2010526932A JP 2010526932 A JP2010526932 A JP 2010526932A JP 5539882 B2 JP5539882 B2 JP 5539882B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- plate
- output
- supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87249—Multiple inlet with multiple outlet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/494—Fluidic or fluid actuated device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49428—Gas and water specific plumbing component making
- Y10T29/49432—Nozzle making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/861,402 US8211231B2 (en) | 2007-09-26 | 2007-09-26 | Delivery device for deposition |
| US11/861,402 | 2007-09-26 | ||
| PCT/US2008/011063 WO2009042145A2 (en) | 2007-09-26 | 2008-09-24 | Delivery device for deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010541241A JP2010541241A (ja) | 2010-12-24 |
| JP2010541241A5 JP2010541241A5 (enExample) | 2011-11-10 |
| JP5539882B2 true JP5539882B2 (ja) | 2014-07-02 |
Family
ID=40377417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010526932A Active JP5539882B2 (ja) | 2007-09-26 | 2008-09-24 | 蒸着のための供給装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8211231B2 (enExample) |
| EP (1) | EP2191036B1 (enExample) |
| JP (1) | JP5539882B2 (enExample) |
| CN (1) | CN101809192B (enExample) |
| TW (1) | TWI473901B (enExample) |
| WO (1) | WO2009042145A2 (enExample) |
Families Citing this family (79)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US20080166880A1 (en) * | 2007-01-08 | 2008-07-10 | Levy David H | Delivery device for deposition |
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US8092599B2 (en) * | 2007-07-10 | 2012-01-10 | Veeco Instruments Inc. | Movable injectors in rotating disc gas reactors |
| US8211231B2 (en) * | 2007-09-26 | 2012-07-03 | Eastman Kodak Company | Delivery device for deposition |
| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US8182608B2 (en) * | 2007-09-26 | 2012-05-22 | Eastman Kodak Company | Deposition system for thin film formation |
| US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| JP5179389B2 (ja) * | 2008-03-19 | 2013-04-10 | 東京エレクトロン株式会社 | シャワーヘッド及び基板処理装置 |
| EP2159304A1 (en) * | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
| EP3471130A1 (en) * | 2008-12-04 | 2019-04-17 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
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| US20110023775A1 (en) * | 2009-07-31 | 2011-02-03 | E.I. Du Pont De Nemours And Company | Apparatus for atomic layer deposition |
| US8657959B2 (en) * | 2009-07-31 | 2014-02-25 | E I Du Pont De Nemours And Company | Apparatus for atomic layer deposition on a moving substrate |
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| US20110097491A1 (en) * | 2009-10-27 | 2011-04-28 | Levy David H | Conveyance system including opposed fluid distribution manifolds |
| US20110097489A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Distribution manifold including multiple fluid communication ports |
| US20110097492A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold operating state management system |
| US20110097490A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including compliant plates |
| US20110097493A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including non-parallel non-perpendicular slots |
| US20110097488A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including mirrored finish plate |
| US20110097494A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid conveyance system including flexible retaining mechanism |
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| WO2011062779A1 (en) | 2009-11-20 | 2011-05-26 | Eastman Kodak Company | Method for selective deposition and devices |
| US7998878B2 (en) * | 2009-11-20 | 2011-08-16 | Eastman Kodak Company | Method for selective deposition and devices |
| EP2360293A1 (en) | 2010-02-11 | 2011-08-24 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
| EP2362001A1 (en) * | 2010-02-25 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and device for layer deposition |
| EP2362411A1 (en) | 2010-02-26 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for reactive ion etching |
| US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| FI20105904A0 (fi) * | 2010-08-30 | 2010-08-30 | Beneq Oy | Suutinpää |
| JP5369304B2 (ja) * | 2010-09-30 | 2013-12-18 | ソイテック | 原子層堆積によって半導体材料を形成するためのシステム及び方法 |
| CN102443781A (zh) * | 2010-09-30 | 2012-05-09 | 财团法人工业技术研究院 | 气体喷洒模块及其气体喷洒扫描装置 |
| US8486192B2 (en) | 2010-09-30 | 2013-07-16 | Soitec | Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods |
| US8133806B1 (en) | 2010-09-30 | 2012-03-13 | S.O.I.Tec Silicon On Insulator Technologies | Systems and methods for forming semiconductor materials by atomic layer deposition |
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| US8618003B2 (en) | 2011-12-05 | 2013-12-31 | Eastman Kodak Company | Method of making electronic devices using selective deposition |
| CN104040023B (zh) * | 2012-01-16 | 2016-04-13 | 株式会社爱发科 | 成膜装置 |
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| US8791023B2 (en) | 2012-08-31 | 2014-07-29 | Eastman Kodak Company | Patterned thin film dielectric layer formation |
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-
2007
- 2007-09-26 US US11/861,402 patent/US8211231B2/en active Active
-
2008
- 2008-09-24 EP EP08834008.8A patent/EP2191036B1/en active Active
- 2008-09-24 WO PCT/US2008/011063 patent/WO2009042145A2/en not_active Ceased
- 2008-09-24 CN CN2008801090915A patent/CN101809192B/zh active Active
- 2008-09-24 JP JP2010526932A patent/JP5539882B2/ja active Active
- 2008-09-25 TW TW97136921A patent/TWI473901B/zh active
-
2012
- 2012-05-08 US US13/466,507 patent/US8420168B2/en active Active
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- 2013-02-26 US US13/776,831 patent/US20130168462A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US8211231B2 (en) | 2012-07-03 |
| TW200923123A (en) | 2009-06-01 |
| TWI473901B (zh) | 2015-02-21 |
| CN101809192A (zh) | 2010-08-18 |
| CN101809192B (zh) | 2013-05-01 |
| US20130168462A1 (en) | 2013-07-04 |
| US8420168B2 (en) | 2013-04-16 |
| US20090081366A1 (en) | 2009-03-26 |
| WO2009042145A2 (en) | 2009-04-02 |
| US20120219712A1 (en) | 2012-08-30 |
| WO2009042145A3 (en) | 2009-08-20 |
| EP2191036A2 (en) | 2010-06-02 |
| JP2010541241A (ja) | 2010-12-24 |
| EP2191036B1 (en) | 2018-05-02 |
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