JP5538673B2 - Manufacturing method of semiconductor substrate using SOQ substrate - Google Patents
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本発明は、ＳＯＱ基板を用いた半導体基板の製造方法に関するものである。
The present invention relates to the production how the semiconductor substrate using the SOQ substrate.
絶縁体層上に設けられたシリコン層を半導体装置の形成に利用するＳＯＩ（Ｓｉｌｉｃｏｎ Ｏｎ Ｉｎｓｕｌａｔｏｒ）技術は、α線耐性、ラッチアップ特性、あるいはショートチャネルの抑制効果など、通常の単結晶シリコン基板では達成し得ない優れた特性を示すため、半導体装置の高集積化を目的として開発が進められている。 SOI (Silicon On Insulator) technology, which uses a silicon layer provided on an insulator layer for the formation of a semiconductor device, has an α-ray resistance, a latch-up characteristic, or a short channel suppression effect in a normal single crystal silicon substrate. In order to exhibit excellent characteristics that cannot be achieved, development has been promoted for the purpose of high integration of semiconductor devices.
最近では、１００ｎｍ以下の厚さにまで薄膜化されたＳＯＩ層にデバイスを形成したものによって、優れたショートチャネル抑制効果が見いだされている。また、このようにして形成されたＳＯＩデバイスは、放射線耐性に優れていることによる高信頼性を備えるとともに、寄生容量の低減による素子の高速化や低消費電力化を図れること、あるいは完全空乏型電界効果トランジスタを作製できることによるプロセスルールの微細化を図れることなどの優れた点を備えている。 Recently, an excellent short channel suppression effect has been found by forming a device on an SOI layer thinned to a thickness of 100 nm or less. In addition, the SOI device formed in this way has high reliability due to its excellent radiation resistance, and can increase the speed and power consumption of the element by reducing parasitic capacitance, or can be completely depleted. It has excellent points such as miniaturization of process rules due to the ability to produce field effect transistors.
このようなＳＯＩ構造を形成する方法としては、単結晶シリコン基板の貼り合わせによるＳＯＩ基板の製造方法がある。一般に貼り合わせ法と呼ばれるこの方法は、単結晶シリコン基板と支持基板とを酸化膜を介して重ね合わせ、基板表面のＯＨ基を利用して室温程度で貼り合わせた後、単結晶シリコン基板を研削や研磨、またはエッチングによって薄膜化し、続いて７００℃〜１２００℃程度の熱処理によってシロキサン結合（Ｓｉ−Ｏ−Ｓｉ）して、貼り合わせ強度を上げて、単結晶シリコン層を支持基板上に形成するものである。この手法では、単結晶シリコン基板を直接、薄膜化するので、シリコン薄膜の結晶性に優れ、高性能のデバイスを作成できる。また、この貼り合わせ法を応用したものとして、単結晶シリコン基板に水素イオンを注入し、これを支持基板と貼り合わせた後、４００℃〜６００℃程度の熱処理によって薄膜シリコン層を単結晶シリコン基板の水素注入領域から分離し、次に１１００℃程度までの熱処理で貼り合わせ強度を上げる手法や、表面を多孔質化したシリコン基板上に単結晶シリコン層をエピタキシャル成長させ、これを支持基板と貼り合わせた後にシリコン基板を除去し、多孔質シリコン層をエッチングすることにより支持基板上にエピタキシャル単結晶シリコン薄膜を形成する手法などが知られている。 As a method for forming such an SOI structure, there is a method for manufacturing an SOI substrate by bonding single crystal silicon substrates. This method, commonly referred to as a bonding method, is a method in which a single crystal silicon substrate and a support substrate are overlapped via an oxide film, bonded together at room temperature using OH groups on the substrate surface, and then the single crystal silicon substrate is ground. The film is thinned by polishing, polishing, or etching, and then siloxane bond (Si—O—Si) is formed by heat treatment at about 700 ° C. to 1200 ° C. to increase the bonding strength, and a single crystal silicon layer is formed on the supporting substrate. Is. In this method, since the single crystal silicon substrate is directly thinned, a silicon thin film having excellent crystallinity and a high performance device can be produced. Further, as an application of this bonding method, hydrogen ions are implanted into a single crystal silicon substrate, bonded to a support substrate, and then a thin film silicon layer is formed by heat treatment at about 400 ° C. to 600 ° C. A method of increasing the bonding strength by heat treatment up to about 1100 ° C. after separating from the hydrogen injection region of this layer, or epitaxially growing a single crystal silicon layer on a porous silicon substrate and bonding this to a support substrate After that, a method of forming an epitaxial single crystal silicon thin film on a supporting substrate by removing the silicon substrate and etching the porous silicon layer is known.
貼り合わせ法によるＳＯＩ基板は通常のバルク半導体基板（半導体集積回路）と同様に、様々なデバイスの作製に用いることができるが、従来のバルク基板と異なる点として、支持基板に様々な材料を使用することが可能である点を挙げることができる。すなわち、支持基板としては、通常のシリコン基板はもちろんのこと、透光性を備えた石英基板、あるいはガラス基板などを用いることができる。従って、透光性基板上に単結晶シリコン薄膜を形成することによって、光透過性を必要とするデバイス、例えば、透過型の液晶装置などの電気光学装置においても、アクティブマトリクス基板上に、結晶性に優れた単結晶シリコン層を用いて高性能なトランジスタ素子を形成することができる。すなわち、画素電極を駆動する画素スイッチング用ＭＩＳ形トランジスタや、画像表示領域の周辺領域で駆動回路を構成する駆動回路用ＭＩＳ形トランジスタを単結晶シリコン層であるＳＯＩ層に形成することにより表示の微細化、高速化を図ることができる。（特許文献１参照） The SOI substrate by the bonding method can be used for manufacturing various devices like a normal bulk semiconductor substrate (semiconductor integrated circuit). However, as a difference from the conventional bulk substrate, various materials are used for the support substrate. The point which can be done can be mentioned. That is, as the supporting substrate, not only a normal silicon substrate but also a translucent quartz substrate or a glass substrate can be used. Therefore, by forming a single-crystal silicon thin film on a light-transmitting substrate, even in a device that requires light transmission, for example, an electro-optical device such as a transmission-type liquid crystal device, A high-performance transistor element can be formed using a single crystal silicon layer that is excellent in the above. That is, by forming a pixel switching MIS type transistor for driving a pixel electrode or a driving circuit MIS type transistor constituting a driving circuit in a peripheral region of the image display region in an SOI layer which is a single crystal silicon layer, fine display can be achieved. And speeding up can be achieved. (See Patent Document 1)
図３は従来技術によるＳＯＩ基板を用いたＬＳＩプロセスの絶縁膜形成工程を示す工程断面図であり、透過型液晶表示装置に用いる例である。（Ａ）はＳＯＩ基板、（Ｂ）はシリコン基板を加工した図、（Ｃ）は絶縁膜を形成した図である。 FIG. 3 is a process sectional view showing an insulating film forming process of an LSI process using an SOI substrate according to the prior art, and is an example used for a transmissive liquid crystal display device. (A) is an SOI substrate, (B) is a diagram obtained by processing a silicon substrate, and (C) is a diagram in which an insulating film is formed.
（Ａ）においてＳＯＩ基板は、絶縁基板にシリコン基板１を使用し、表面に酸化シリコン膜２を介して単結晶シリコン基板（以下、シリコン膜という）３が貼り合わされたＳＯＩ基板である。
（Ｂ）は、液晶画素電極を駆動するのに必要な複数の半導体素子部４以外を除去した図である。
（Ｃ）は、その上に絶縁膜（例えば窒化シリコン膜）５を形成した図である。窒化シリコン膜５はＬＳＩ製造プロセスの中で幾度も形成され、除去される。熱膨張係数は、シリコン膜３が３．９×１０−６／℃、窒化シリコン膜５が３．５×１０−６／℃であり、殆んど同じであり、熱膨張係数に起因する熱応力の発生は少なかった。
In (A), the SOI substrate is an SOI substrate in which a
FIG. 6B is a diagram in which a portion other than the plurality of
(C) is a view in which an insulating film (for example, a silicon nitride film) 5 is formed thereon. The silicon nitride film 5 is formed and removed many times during the LSI manufacturing process. The thermal expansion coefficients of the silicon film 3 are 3.9 × 10 −6 / ° C. and the silicon nitride film 5 is 3.5 × 10 −6 / ° C., which are almost the same, and the heat caused by the thermal expansion coefficient There was little generation of stress.
ここで、透過型液晶表示装置のコントラストを上げるために、透過型液晶表示装置に使用するＳＯＩ基板として光透過率の高い石英を使用したＳＯＱ基板を用いた場合、支持基板である石英基板と半導体プロセスで形成される絶縁膜において、例えば９００℃〜１１００℃程度で形成する窒化シリコン膜の熱膨張係数（３．５×１０−６／℃）と石英基板の熱膨張係数（０．５×１０−６／℃）間では熱膨張係数が大きく違う。９００℃〜１１００℃から室温（２５℃）まで温度を下げると窒化シリコン膜には強い引張り応力が発生し、窒化シリコン膜の剥離あるいは窒化シリコン膜に囲繞された半導体素子部に悪影響を与える。 Here, in order to increase the contrast of the transmissive liquid crystal display device, when an SOQ substrate using quartz with high light transmittance is used as the SOI substrate used in the transmissive liquid crystal display device, the quartz substrate which is the supporting substrate and the semiconductor In the insulating film formed by the process, for example, the thermal expansion coefficient (3.5 × 10 −6 / ° C.) of the silicon nitride film formed at about 900 ° C. to 1100 ° C. and the thermal expansion coefficient (0.5 × 10 10) of the quartz substrate. The coefficient of thermal expansion differs greatly between -6 / ℃. When the temperature is lowered from 900 ° C. to 1100 ° C. to room temperature (25 ° C.), a strong tensile stress is generated in the silicon nitride film, which adversely affects the peeling of the silicon nitride film or the semiconductor element portion surrounded by the silicon nitride film.
かかる問題点に鑑みて、本発明の課題は、支持基板（石英）とシリコン膜上に形成される窒化シリコン膜との熱膨張係数の差により発生する熱応力を緩和する半導体基板を形成可能な半導体基板の製造方法を提供することにある。
In view of such a problem, an object of the present invention is to form a semiconductor substrate that relieves thermal stress generated by a difference in thermal expansion coefficient between a support substrate (quartz) and a silicon nitride film formed on a silicon film. It is to provide a manufacturing how the semiconductor substrate.
ＳＯＱ基板上に形成された半導体素子部と、半導体素子部周辺に石英と熱膨張係数の異なる絶縁膜を形成するＳＯＱ基板を用いた半導体基板の製造方法において、前記絶縁膜を形成する前に、前記半導体素子部周辺に前記絶縁膜の分離部材を設け、前記絶縁膜を形成した後に、前記分離部材の上面の前記絶縁膜を除去する半導体基板の製造方法とする。
In a semiconductor substrate manufacturing method using a semiconductor element portion formed on an SOQ substrate and an SOQ substrate that forms an insulating film having a different thermal expansion coefficient from quartz around the semiconductor element portion, before forming the insulating film, wherein the separating member of the insulating film in the peripheral semiconductor element portion is provided, it said after forming the insulating film, a method of manufacturing a semiconductor substrate you remove the insulating film on the upper surface of the separating member.
ＳＯＱ基板上に形成された半導体素子部と、半導体素子部周辺に石英と熱膨張係数の異なる絶縁膜を形成するＳＯＱ基板を用いた透過型液晶表示装置用半導体基板の製造方法において、前記絶縁膜を形成する前に、画素周辺部及びまたは前記半導体素子部周辺に前記絶縁膜の分離部材を設け、前記絶縁膜を形成した後に、前記分離部材の上面の前記絶縁膜を除去する半導体基板の製造方法とする。 In the method of manufacturing a semiconductor substrate for a transmissive liquid crystal display device using a semiconductor element portion formed on an SOQ substrate and an SOQ substrate in which an insulating film having a thermal expansion coefficient different from that of quartz is formed around the semiconductor element portion, the insulating film before forming a separation member of the insulating film provided in the peripheral pixel portion periphery and or the semiconductor element, the after forming the insulating film, the semiconductor substrate you remove the insulating film on the upper surface of the separating member Let it be a manufacturing method.
前記絶縁膜が窒化シリコン膜であり、前記分離部材が酸化シリコン膜である前記の半導体基板の製造方法とする。
Wherein the insulating film is a silicon nitride Makudea is, the separating member is a method for manufacturing a semiconductor substrate Ru silicon oxide Makudea.
前記絶縁膜形成後、前記分離部材を除去する前記の半導体基板の製造方法とする。 After the formation of the insulating film, the semiconductor substrate is manufactured by removing the separation member.
本発明によると、ＳＯＱ基板を用いた半導体基板において、石英基板と絶縁膜の熱膨張係数差による応力を緩和できるので、半導体素子のクラック防止や応力による劣化を防止できる。光透過率の高い石英基板を使用し、単結晶シリコン基板を使用できるので、コントラストの高い高精細な液晶表示装置を提供することができる。 According to the present invention, in a semiconductor substrate using an SOQ substrate, stress due to a difference in thermal expansion coefficient between the quartz substrate and the insulating film can be relieved, so that cracking of the semiconductor element and deterioration due to stress can be prevented. Since a quartz substrate with high light transmittance is used and a single crystal silicon substrate can be used, a high-definition liquid crystal display device with high contrast can be provided.
ＳＯＱ基板上に形成された半導体素子部と、半導体素子部周辺に石英と熱膨張係数の異なる絶縁膜を形成するＳＯＱ基板を用いた半導体基板の製造方法において、前記半導体素子部周辺に前記絶縁膜の分離部材を設ける半導体基板の製造方法とし、前記絶縁膜は窒化シリコン膜とし、窒化シリコン膜形成後、前記分離部材は除去する半導体基板の製造方法とする。 In a method for manufacturing a semiconductor substrate using a semiconductor element portion formed on an SOQ substrate and an SOQ substrate having an insulating film having a thermal expansion coefficient different from that of quartz around the semiconductor element portion, the insulating film is formed around the semiconductor element portion. A method of manufacturing a semiconductor substrate in which the isolation member is provided, wherein the insulating film is a silicon nitride film, and after the silicon nitride film is formed, the isolation member is removed.
図１は本発明によるＳＯＱ基板を用いたＬＳＩプロセスの絶縁膜形成工程を示す工程断面図であり、透過型液晶表示装置に用いる例である。（Ａ）はＳＯＱ基板、（Ｂ）はシリコン膜を加工した図、（Ｃ）は絶縁膜Ｉを形成した図、（Ｄ）は絶縁膜をパターニングした図、（Ｅ）は絶縁膜IIを形成した図、（Ｆ）は半導体素子部と分離部材部の上面の窒化シリコン膜を除去した図（Ｇ）は絶縁膜Ｉを除去した図である。 FIG. 1 is a process sectional view showing an insulating film forming process of an LSI process using an SOQ substrate according to the present invention, and is an example used for a transmissive liquid crystal display device. (A) is an SOQ substrate, (B) is a processed silicon film, (C) is an insulating film I, (D) is an insulating film, and (E) is an insulating film II. FIG. 5F is a view in which the silicon nitride film on the upper surface of the semiconductor element portion and the separation member portion is removed. FIG. 5G is a view in which the insulating film I is removed.
（Ａ）においてＳＯＱ基板は、絶縁基板に石英基板１１を使用し、表面に酸化シリコン膜１２を介してシリコン膜１３が貼り合わされている。
（Ｂ）は、液晶画素電極を駆動するのに必要な複数の半導体素子部１４以外のシリコン膜１３を除去した図である。
（Ｃ）は、その上に石英基板１１と熱膨張係数の近い絶縁膜（例えば酸化シリコン膜）１５を形成した図である。熱膨張係数は、石英基板０．５×１０−６／℃、酸化シリコンが０．５×１０−６／℃であり、同じである。
In (A), the SOQ substrate uses a quartz substrate 11 as an insulating substrate, and a
FIG. 5B is a diagram in which the
(C) is a view in which an insulating film (for example, a silicon oxide film) 15 having a thermal expansion coefficient close to that of the quartz substrate 11 is formed thereon. The thermal expansion coefficients are the same, ie, quartz substrate 0.5 × 10 −6 / ° C. and silicon oxide 0.5 × 10 −6 / ° C.
（Ｄ）は、酸化シリコン膜１５をパターニングし、次に形成する窒化シリコン膜を分離するための分離部材部１６を半導体素子部１４の周囲に形成し、その余の部分を除去した図である。（Ｃ）の絶縁膜１５形成時にマスキングした蒸着により直接（Ｄ）の状態の分離部材部１６を形成しても良い。
FIG. 4D is a diagram in which the
（Ｅ）は、窒化シリコン膜１７を形成した図である。
(E) is a view in which a
（Ｆ）は半導体素子部１４と分離部材部１６の上面の窒化シリコン膜１７を除去した図で、図２はその上面図である。図２においては液晶表示装置の４つの画素部を示している。窒化シリコン膜１７は半導体素子部１４の周囲に形成された分離部材１６で分断されている。図示していないが、画素部境界に分離部材１６を設けても良い。窒化シリコン膜１７を分離部材１６で分断しているので、石英基板１１に直接形成される窒化シリコン膜１７の面積が減少し応力が緩和される。また、半導体素子部１４に影響を与える窒化シリコン膜１７は分離部材１６の内周と半導体素子部１４の外周間の微小部分になるので、半導体素子１４のクラック防止や応力による劣化を防止できる。
（Ｇ）は分離部材１６を除去した例であり、より窒化シリコン膜の引張り応力が緩和できる。
FIG. 2F is a view in which the
(G) is an example in which the
１ 絶縁基板（シリコン基板）
２ シリコン酸化膜
３ 単結晶シリコン基板（シリコン膜）
４ 半導体素子部
５ 絶縁膜（窒化シリコン膜）
１１ 石英基板
１２ 絶縁膜（酸化シリコン膜）
１３ 単結晶シリコン膜（基板）
１４ 半導体素子部
１５ 絶縁膜Ｉ（酸化シリコン膜）
１６ 分離部材部
１７ 絶縁膜II（窒化シリコン膜）
1 Insulating substrate (silicon substrate)
2 Silicon oxide film 3 Single crystal silicon substrate (silicon film)
4 Semiconductor element part 5 Insulating film (silicon nitride film)
11 Quartz substrate 12 Insulating film (silicon oxide film)
13 Single crystal silicon film (substrate)
14
16 Separating
Claims (4)
4. The method of manufacturing a semiconductor substrate according to claim 1, wherein the separating member is removed after the insulating film is formed.
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| JP2841381B2 (en) * | 1988-09-19 | 1998-12-24 | セイコーエプソン株式会社 | Method for manufacturing thin film transistor |
| JPH1152426A (en) * | 1997-08-07 | 1999-02-26 | Toshiba Corp | Liquid crystal display device and its production |
| JP4653374B2 (en) * | 2001-08-23 | 2011-03-16 | セイコーエプソン株式会社 | Manufacturing method of electro-optical device |
| JP2003142665A (en) * | 2001-08-23 | 2003-05-16 | Seiko Epson Corp | Method for manufacturing semiconductor substrate, semiconductor substrate, electrooptic device and electronic apparatus |
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