JP5538416B2 - 光放出素子及び該素子の製造方法 - Google Patents

光放出素子及び該素子の製造方法 Download PDF

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JP5538416B2
JP5538416B2 JP2011535870A JP2011535870A JP5538416B2 JP 5538416 B2 JP5538416 B2 JP 5538416B2 JP 2011535870 A JP2011535870 A JP 2011535870A JP 2011535870 A JP2011535870 A JP 2011535870A JP 5538416 B2 JP5538416 B2 JP 5538416B2
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contact
layer
semiconductor chip
light
light emitting
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JP2012508971A5 (enExample
JP2012508971A (ja
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ヘルマン ジークフリート
テーガー ゼバスティアン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011535870A 2008-11-14 2009-11-05 光放出素子及び該素子の製造方法 Active JP5538416B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008057350.7 2008-11-14
DE102008057350A DE102008057350A1 (de) 2008-11-14 2008-11-14 Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
PCT/DE2009/001571 WO2010054628A2 (de) 2008-11-14 2009-11-05 Strahlungsemittierendes bauelement und verfahren zu dessen herstellung

Publications (3)

Publication Number Publication Date
JP2012508971A JP2012508971A (ja) 2012-04-12
JP2012508971A5 JP2012508971A5 (enExample) 2012-09-27
JP5538416B2 true JP5538416B2 (ja) 2014-07-02

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JP2011535870A Active JP5538416B2 (ja) 2008-11-14 2009-11-05 光放出素子及び該素子の製造方法

Country Status (7)

Country Link
US (1) US8552459B2 (enExample)
EP (1) EP2347455B1 (enExample)
JP (1) JP5538416B2 (enExample)
KR (1) KR101609012B1 (enExample)
CN (1) CN102216365B (enExample)
DE (1) DE102008057350A1 (enExample)
WO (1) WO2010054628A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010031732A1 (de) * 2010-07-21 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010033963A1 (de) * 2010-08-11 2012-02-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
DE102011010504A1 (de) * 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektrischer Halbleiterchip
DE102011013821B4 (de) 2011-03-14 2024-05-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips
DE102011113428A1 (de) * 2011-09-14 2013-03-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102012209325B4 (de) 2012-06-01 2021-09-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Modul
DE102012109083A1 (de) * 2012-09-26 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
EP2830087A1 (en) * 2013-07-26 2015-01-28 Hamilton Sundstrand Corporation Method for interconnection of electrical components on a substrate
DE102013110733A1 (de) * 2013-09-27 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
KR102311791B1 (ko) * 2015-10-16 2021-10-08 한국전기연구원 아민계 폴리머를 포함한 다이오드 제조방법
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
CN107978613A (zh) * 2017-12-15 2018-05-01 中芯集成电路（宁波）有限公司 半导体感光器件及其感光表面处理方法
JP7463662B2 (ja) 2019-07-10 2024-04-09 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9018698D0 (en) * 1990-08-24 1990-10-10 Lynxvale Ltd Semiconductive copolymers for use in electroluminescent devices
US5973337A (en) * 1997-08-25 1999-10-26 Motorola, Inc. Ball grid device with optically transmissive coating
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
JP3641122B2 (ja) * 1997-12-26 2005-04-20 ローム株式会社 半導体発光素子、半導体発光モジュール、およびこれらの製造方法
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
JP2003133589A (ja) * 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光ダイオード
DE102004029412A1 (de) * 2004-02-27 2005-10-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
JP4457826B2 (ja) * 2004-09-22 2010-04-28 三菱化学株式会社 窒化物半導体を用いた発光ダイオード
DE102004050371A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP4692053B2 (ja) * 2005-04-15 2011-06-01 セイコーエプソン株式会社 画像登録装置、画像確認方法、および画像プレビュープログラム
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
CN100480168C (zh) 2005-07-07 2009-04-22 上海交通大学 反应离子深刻蚀加工微结构的侧壁钝化方法
DE102005063106A1 (de) * 2005-12-30 2007-07-05 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip und optoelektronisches Bauelement mit solch einem Halbleiterchip
JP4203087B2 (ja) 2006-07-25 2008-12-24 株式会社沖データ 半導体複合装置、ｌｅｄプリントヘッド及び画像形成装置
CN101501080B (zh) * 2006-08-04 2011-05-11 三菱化学株式会社 绝缘层、电子元件、场效应晶体管和聚乙烯基苯硫酚
DE102006045702A1 (de) 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
JP4846506B2 (ja) * 2006-10-10 2011-12-28 株式会社フジクラ 発光装置およびその製造方法
WO2008156121A1 (ja) * 2007-06-21 2008-12-24 Idemitsu Kosan Co., Ltd. 有機薄膜トランジスタ及び有機薄膜発光トランジスタ

Also Published As

Publication number Publication date
EP2347455A2 (de) 2011-07-27
DE102008057350A1 (de) 2010-05-20
CN102216365A (zh) 2011-10-12
CN102216365B (zh) 2013-07-03
KR101609012B1 (ko) 2016-04-04
JP2012508971A (ja) 2012-04-12
WO2010054628A3 (de) 2010-12-23
WO2010054628A2 (de) 2010-05-20
EP2347455B1 (de) 2013-03-27
KR20110095342A (ko) 2011-08-24
US20110278621A1 (en) 2011-11-17
US8552459B2 (en) 2013-10-08

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