JP2012508971A - 光放出素子及び該素子の製造方法 - Google Patents
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
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- 239000011787 zinc oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000005494 condensation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000007858 starting material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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Abstract
Description
・キャリア素子、殊にキャリア基板の方に向いた、光を発生させる半導体層列(これは殊に、光を発生させるエピタキシャル層列である)の主表面に、反射層が被着又は形成されており、該反射層は半導体層列内で発生した電磁線の少なくとも一部をこれに反射し戻す;
・薄膜発光ダイオードチップは、キャリア素子を有し、これは半導体層列がエピタキシャル成長した成長基板ではなく、後になって半導体層列に取り付けられた別個のキャリア素子である;
・半導体層列は、20μm以下の範囲、殊に10μm以下の範囲の厚さを有する;
・半導体層列は成長基板を含まない。この"成長基板を含まない"とは、場合によっては成長のために利用される成長基板が、半導体層列から取り除かれているか、又は少なくとも非常に薄くされていることを意味する。殊に、この成長基板はその時に、それ自体では又はエピタキシャル層列とのみ一緒では片持ばり式に保持することができないほど薄くされている。非常に薄くされた成長基板の残っている残留物は、殊に、そのものが成長基板の機能のために適しておらず;及び
・半導体層列は、混合構造を有する少なくとも1つの面を備えた少なくとも1つの半導体層を含み、理想的な場合にはこの混合構造により半導体層列内に近似的にエルゴード的な光分布がもたらされ、すなわち、この光分布は、可能な限りエルゴード的な確率散乱特性を有している。
Claims (15)
- 光放出素子であって、
− キャリア(1)
− 前記キャリア(1)に配置された半導体チップ(2)、その際、前記半導体チップ(2)は、電磁線を発生させるための活性層及び光出射面(3)を有する、
− 前記半導体チップ(2)の電気的な接触のための第1の及び第2のコンタクト構造(4a、4b)、
− 第1のコンタクト層(21)及び第2のコンタクト層(6)、その際、前記半導体チップ(2)は、第1のコンタクト層(21)により第1のコンタクト構造(4a)と導電接続しており、かつ第2のコンタクト層(6)により第2のコンタクト構造(4b)と導電接続している、
− 前記半導体チップ(2)に配置されたパッシベーション層(5)、その際、前記パッシベーション層(5)は、一般式(I)
を包含する光放出素子。 - R1、R2、R7、R8、R9、R10、R15及びR16が、そのつどHである、請求項1記載の光放出素子。
- 少なくとも前記パッシベーション層(5)の部分領域が、前記素子の最も外側の層となる、請求項1又は2記載の光放出素子。
- 前記パッシベーション層(5)が光出射面(3)に配置されている、請求項1から3までのいずれか1項記載の光放出素子。
- 前記半導体チップ(2)の前記光出射面(3)に少なくとも光学素子(9)が配置されている、請求項1から4までのいずれか1項記載の光放出素子。
- 前記光学素子(9)が変換層又はフィルタを包含する、請求項5記載の光放出素子。
- 前記パッシベーション層(5)が、前記半導体チップ(2)と離反した前記光学素子(9)の表面の部分領域に少なくとも配置されている、請求項5又は6記載の光放出素子。
- 前記パッシベーション層(5)が、第1のコンタクト構造(4a)を第2のコンタクト構造(4b)に対して電気的に絶縁する、請求項1から7までのいずれか1項記載の光放出素子。
- 前記パッシベーション層(5)が、第2のコンタクト層(6)を第1のコンタクト構造(4a)に対して電気的に絶縁する、請求項1から8までのいずれか1項記載の光放出素子。
- 前記第2のコンタクト構造(6)が、前記半導体チップ(2)の光出射面(3)にランプ様に配置されている、請求項1から9までのいずれか1項記載の光放出素子。
- 前記第2のコンタクト層(6)が、前記半導体チップ(2)の光出射面(3)に配置されているコンタクトウェブ(61)を有する、請求項1から10までのいずれか1項記載の光放出素子。
- 前記キャリア(1)によって第1の及び第2の貫通接触部(8a、8b)が存在しており、かつ第1の貫通接触部(8a)が第1のコンタクト構造(4a)と、かつ第2の貫通接触部(8b)が第2のコンタクト構造(4b)と導電接続している、請求項1から11までのいずれか1項記載の光放出素子。
- 前記素子が薄膜チップとして形作られている、請求項1から12までのいずれか1項記載の光放出素子。
- 光放出素子の製造方法であって、以下の方法工程:
A)第1の及び第2のコンタクト構造(4a、4b)を有するキャリア(1)を準備する方法工程、
B)半導体チップ(2)を第1のコンタクト層(21)により第1のコンタクト構造(4a)と機械的かつ導電的に接続する方法工程、
C)前記半導体チップ(2)を第2のコンタクト層(6)により第2のコンタクト構造(4b)と機械的かつ導電的に接続する方法工程、
D)パッシベーション層(5)を少なくとも前記半導体チップ(2)の部分領域に被着させる方法工程を有し、その際、前記パッシベーション層(5)のために、一般式(I):
- 前記パッシベーション層(5)をプラズマ法により被着させる、請求項14記載の方法。
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DE102008057350.7 | 2008-11-14 | ||
DE102008057350A DE102008057350A1 (de) | 2008-11-14 | 2008-11-14 | Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
PCT/DE2009/001571 WO2010054628A2 (de) | 2008-11-14 | 2009-11-05 | Strahlungsemittierendes bauelement und verfahren zu dessen herstellung |
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JP2012508971A true JP2012508971A (ja) | 2012-04-12 |
JP2012508971A5 JP2012508971A5 (ja) | 2012-09-27 |
JP5538416B2 JP5538416B2 (ja) | 2014-07-02 |
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DE102010031732A1 (de) * | 2010-07-21 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102010033963A1 (de) * | 2010-08-11 | 2012-02-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US8653542B2 (en) * | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
DE102011010504A1 (de) * | 2011-02-07 | 2012-08-09 | Osram Opto Semiconductors Gmbh | Optoelektrischer Halbleiterchip |
DE102011013821B4 (de) | 2011-03-14 | 2024-05-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips |
DE102011113428A1 (de) | 2011-09-14 | 2013-03-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102012209325B4 (de) * | 2012-06-01 | 2021-09-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Modul |
DE102012109083A1 (de) * | 2012-09-26 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
EP2830087A1 (en) * | 2013-07-26 | 2015-01-28 | Hamilton Sundstrand Corporation | Method for interconnection of electrical components on a substrate |
KR102311791B1 (ko) * | 2015-10-16 | 2021-10-08 | 한국전기연구원 | 아민계 폴리머를 포함한 다이오드 제조방법 |
DE102017112223A1 (de) | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils |
CN107978613A (zh) * | 2017-12-15 | 2018-05-01 | 中芯集成电路(宁波)有限公司 | 半导体感光器件及其感光表面处理方法 |
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DE102006045702A1 (de) | 2006-09-27 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
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2008
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- 2009-11-05 US US13/129,018 patent/US8552459B2/en active Active
- 2009-11-05 CN CN2009801452234A patent/CN102216365B/zh active Active
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Also Published As
Publication number | Publication date |
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WO2010054628A3 (de) | 2010-12-23 |
CN102216365B (zh) | 2013-07-03 |
JP5538416B2 (ja) | 2014-07-02 |
US8552459B2 (en) | 2013-10-08 |
WO2010054628A2 (de) | 2010-05-20 |
CN102216365A (zh) | 2011-10-12 |
EP2347455A2 (de) | 2011-07-27 |
EP2347455B1 (de) | 2013-03-27 |
DE102008057350A1 (de) | 2010-05-20 |
KR20110095342A (ko) | 2011-08-24 |
US20110278621A1 (en) | 2011-11-17 |
KR101609012B1 (ko) | 2016-04-04 |
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