JP5529865B2 - 温度安定化システム、リソグラフィ投影装置、および温度制御方法 - Google Patents

温度安定化システム、リソグラフィ投影装置、および温度制御方法 Download PDF

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JP5529865B2
JP5529865B2 JP2011521513A JP2011521513A JP5529865B2 JP 5529865 B2 JP5529865 B2 JP 5529865B2 JP 2011521513 A JP2011521513 A JP 2011521513A JP 2011521513 A JP2011521513 A JP 2011521513A JP 5529865 B2 JP5529865 B2 JP 5529865B2
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JP2011530804A (ja
JP2011530804A5 (enExample
Inventor
オッテンズ，ヨースト
ヤコブス，ヨハネス
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エーエスエムエル ネザーランズ ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011521513A 2008-08-08 2009-07-22 温度安定化システム、リソグラフィ投影装置、および温度制御方法 Expired - Fee Related JP5529865B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13604608P 2008-08-08 2008-08-08
US61/136,046 2008-08-08
PCT/EP2009/059413 WO2010015511A1 (en) 2008-08-08 2009-07-22 Lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2011530804A JP2011530804A (ja) 2011-12-22
JP2011530804A5 JP2011530804A5 (enExample) 2012-09-06
JP5529865B2 true JP5529865B2 (ja) 2014-06-25

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JP2011521513A Expired - Fee Related JP5529865B2 (ja) 2008-08-08 2009-07-22 温度安定化システム、リソグラフィ投影装置、および温度制御方法

Country Status (7)

Country Link
US (1) US8994917B2 (enExample)
JP (1) JP5529865B2 (enExample)
KR (1) KR20110052697A (enExample)
CN (1) CN102067039B (enExample)
NL (1) NL2003258A1 (enExample)
TW (1) TW201011484A (enExample)
WO (1) WO2010015511A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101495922B (zh) * 2006-07-28 2012-12-12 迈普尔平版印刷Ip有限公司 光刻系统、热消散方法和框架
EP2365390A3 (en) 2010-03-12 2017-10-04 ASML Netherlands B.V. Lithographic apparatus and method
JP5618588B2 (ja) * 2010-03-24 2014-11-05 キヤノン株式会社 インプリント方法
DE102011010462A1 (de) * 2011-01-28 2012-08-02 Carl Zeiss Laser Optics Gmbh Optische Anordnung für eine EUV-Projektionsbelichtungsanlage sowie Verfahren zum Kühlen eines optischen Bauelements
EP2515170B1 (en) * 2011-04-20 2020-02-19 ASML Netherlands BV Thermal conditioning system for thermal conditioning a part of a lithographic apparatus and a thermal conditioning method
JP5778093B2 (ja) * 2011-08-10 2015-09-16 エーエスエムエル ネザーランズ ビー．ブイ． 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法
NL2009189A (en) 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
JP6244454B2 (ja) 2013-09-27 2017-12-06 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のための支持テーブル、リソグラフィ装置、及び、デバイス製造方法
WO2016102131A1 (en) 2014-12-22 2016-06-30 Asml Netherlands B.V. Thermal conditionig method
EP3575873A1 (en) * 2018-05-28 2019-12-04 ASML Netherlands B.V. Particle beam apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2928603B2 (ja) * 1990-07-30 1999-08-03 キヤノン株式会社 Ｘ線露光装置用ウエハ冷却装置
JP3623653B2 (ja) 1998-03-30 2005-02-23 大日本スクリーン製造株式会社 熱処理装置
DE19933798C2 (de) * 1999-07-19 2001-06-21 Siemens Ag Vorrichtung und Verfahren zur Abgasnachbehandlung bei einer Brennkraftmaschine
KR100351049B1 (ko) 1999-07-26 2002-09-09 삼성전자 주식회사 웨이퍼 가열 방법 및 이를 적용한 장치
US6666949B1 (en) * 1999-11-19 2003-12-23 Thermodigm, Llc Uniform temperature workpiece holder
JP3814598B2 (ja) 2003-10-02 2006-08-30 キヤノン株式会社 温度調整装置、露光装置及びデバイス製造方法
EP1530088B1 (en) * 2003-11-05 2007-08-08 ASML Netherlands B.V. Lithographic apparatus
US20060096951A1 (en) 2004-10-29 2006-05-11 International Business Machines Corporation Apparatus and method for controlling process non-uniformity
JP4647401B2 (ja) * 2005-06-06 2011-03-09 東京エレクトロン株式会社 基板保持台、基板温度制御装置及び基板温度制御方法
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007027632A (ja) 2005-07-21 2007-02-01 Nikon Corp 光学装置及び露光装置、並びにデバイス製造方法
US7679033B2 (en) 2005-09-29 2010-03-16 Rosemount Inc. Process field device temperature control
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
JP2007317828A (ja) 2006-05-25 2007-12-06 Nikon Corp 冷却装置、移動装置及び処理装置、並びにリソグラフィシステム
CN101495922B (zh) 2006-07-28 2012-12-12 迈普尔平版印刷Ip有限公司 光刻系统、热消散方法和框架
JP5172194B2 (ja) * 2007-04-04 2013-03-27 本田技研工業株式会社 燃料電池システム

Also Published As

Publication number Publication date
WO2010015511A1 (en) 2010-02-11
JP2011530804A (ja) 2011-12-22
CN102067039B (zh) 2014-04-09
US20110128517A1 (en) 2011-06-02
CN102067039A (zh) 2011-05-18
NL2003258A1 (nl) 2010-02-09
TW201011484A (en) 2010-03-16
KR20110052697A (ko) 2011-05-18
US8994917B2 (en) 2015-03-31

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