JP5529335B2 - Pad pattern repair device - Google Patents

Description

  The present invention relates to a pad pattern repair apparatus, and more particularly, to a pad pattern repair apparatus that repairs a defect of a pad electrode that is provided in a color filter substrate and that is provided to input an inspection signal.

  FIG. 1 shows a structure of a general liquid crystal panel 10, which is formed by laminating a TFT substrate 12 and a color filter substrate 14, and an inspection signal that contacts a probe pin of a probe unit to inspect a visual. An input pad 16 and an OLB pad 16 that comes into contact during a gloss test are provided.

  Such a pad 16 maintains a state in which a TAG film, an anisotropic conductive film (ACF), an LDI (LCD DRIVER IC), an anisotropic conductive film (ACF), and glass are laminated and bonded.

  In particular, the defect of the pad 16 may be caused by scratching at a portion where the probe tip (Probe Tip) contacts during a probe station test, or glass scribing, glass cutting, or the like. Scratches are generated due to particles (Particle) generated at the (Glass Cut) stage, or are generated by other scratches and particles generated during loading / unloading of the substrate.

  However, the distance between the chamber and the substrate, which is a region for repairing defects of the conventional pad, is constant, and air in the repair region flows out due to a pressure difference between the repair region and the external region, resulting in a process yield. There was a problem that it decreased.

  The present invention has been made to solve the above-described conventional problems, and the object thereof is to improve the process yield by maintaining a constant pressure in a region where defects are repaired. It is to provide a pad pattern repair device.

To achieve the above object, the present invention provides a device for repairing a defect of a pad electrode provided for applying a signal to any one of a plurality of substrates, wherein the substrate is loaded on a reference plane. A first exhaust port and a shield gas on the bottom surface with a laser beam irradiation hole provided on the stage and moved to a defect position of the pad electrode and formed so that the purified gas and the source gas are discharged at the center. comprising a chamber outlet and the second outlet are sequentially formed, a clamp for supporting the opposing surface of the substrate in close contact with the reference surface provided on said stage, the pressure in the region where the repair of the defect is performed The distance between the substrate and the bottom surface of the chamber is different depending on the inside and outside of the bottom surface of the chamber so that is maintained constant .

  In the present invention, the distance between the substrate and the chamber is based on the shield gas outlet, and the first and second outer areas on both sides from the shield gas outlet to the second exhaust outlet. Are different from each other.

  In the present invention, the distance between the substrate and the chamber is based on the shield gas outlet, and the first and second outer areas on both sides from the shield gas outlet to the second exhaust outlet. The distance from the second outer region provided with the middle clamp is the same.

  The substrate and the chamber according to the present invention are characterized in that an interval between the first and second outer regions is adjusted with reference to the inner region.

  In the present invention, a probe chip that is electrically connected to the pad electrode and measures resistance is further provided.

  The pad pattern repairing apparatus according to the present invention may have a defect caused by forming a connection hole (Zapping), filling a wiring hole (Contact Hole Filling), and wiring (Wiring) when an insulating film is present on the metal electrode of the pattern. It is characterized by repairing.

  The pad pattern repair device according to the present invention is characterized in that when there is no insulating film on the metal electrode of the pattern, the defect is repaired by connection.

  The pad pattern repairing apparatus according to the present invention is characterized in that when there is an organic substance on the metal electrode of the pattern, the organic substance is removed.

  Such a pad pattern repair apparatus of the present invention has an effect of improving the process yield by maintaining a constant pressure in a region where defects are repaired.

1 schematically shows a general liquid crystal panel. It is a figure which shows the state without a clamp in the pad pattern repair apparatus by this invention. It is a figure which shows the state without a clamp in the pad pattern repair apparatus by this invention. It is a figure which shows the state with a clamp in the pad pattern repair apparatus by this invention. It is a figure which shows the state with a clamp in the pad pattern repair apparatus by this invention.

  Hereinafter, a pad pattern repair apparatus according to the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to these examples.

  As shown in FIGS. 2 and 3, a pad pattern repair apparatus 100 according to a preferred embodiment of the present invention includes a stage 110, a chamber 120, driving means, and a clamp 130, and overlaps between the TFT substrate 12 and the color filter substrate 14. A function of repairing an electrode defect of the pad 16 provided for applying a signal on the TFT substrate 12 not provided is provided.

  In particular, the pad pattern repair apparatus 100 includes an open (Open) generated at a metal electrode of the pad 16 at a pad 16 connecting an LCD or OLED substrate (hereinafter referred to as “substrate”) and a driving printed circuit board (PCB). ) Or Short Vapor Deposition (Chemical Vapor Deposition, CVD) repair technology.

  The stage (Stage: 110) is loaded with substrates 12 and 14 for repairing defects of the pad 16 electrode on the top thereof, and a reference body 112 is provided at one end of the upper surface in order to provide a reference point at the time of loading. Here, the reference body 112 is preferably formed in a bent shape so that one side ends of the substrates 12 and 14 are in contact with each other.

  The chamber 120 is provided on the stage 110, and is moved to the defect position of the pad 16 electrode in the X, Y and Z axis directions by the driving means (not shown) and focused, and then irradiated with laser light. Then, a laser beam irradiation hole 121 having a purified gas discharge port 123 and a source gas discharge port 122 formed at the center is formed, and a first exhaust port 125a and a shield gas discharge port 126 are formed on the bottom surface with the laser beam irradiation hole 121 as a base point. And the second exhaust port 125b are sequentially formed.

  That is, the chamber 120 is provided on the upper side separated from the substrates 12 and 14, is provided with a heating unit (not shown) at the uppermost end, and is a laser beam irradiation that is a path through which a laser beam is irradiated at the center. A hole 121 is formed and flows from an external gas supply unit (not shown) through a source gas supply line, and a source gas discharge port 122 inclined from the source gas supply unit toward the laser beam irradiation hole 121 is formed. The metal source gas formed and discharged from the source gas discharge port 122 is injected so as to gather at the lowermost end of the laser beam irradiation hole 121.

  A purified gas discharge port 123 connected to an external purified gas supply unit (not shown) is connected to an upper end of the source gas supply unit in the chamber 120, and purified gas flows from one end thereof through a purified gas supply line. Are linked together.

  The optical window 124 provided so that the laser beam passes through the upper end of the purified gas discharge port 123 in the chamber 120 is maintained in an airtight state by an O-ring contacting the bottom surface thereof. Fixed.

  The chamber 120 includes the first and second exhaust ports 125a and 125b that are connected to the exhaust unit at the bottom surface with the laser beam irradiation hole 121 as a base point, and a shield gas supply unit (not shown). The shield gas discharge ports 126 are formed so as to be connected and to have different inflow directions and discharge directions.

  Here, the shield gas discharge port 126 injects a shield gas to prevent damage to the substrate surface when the pad 16 is thin-film deposited. On the other hand, the shield gas discharge port 126 discharges the shield gas so as to incline toward the outer side, so that an air curtain is formed, and leakage of unreacted gas and reaction adduct is caused by the air curtain. Make sure that does not occur.

  Although not shown in the drawing, the driving means is a component that is provided on the stage 110 and moves the chamber 120 in the X, Y, and Z-axis directions, and the laser beam irradiation hole 121 is the pad. Move to the defect position of 16 electrodes. At this time, the moving means can move only in the X and Y directions.

  The clamp 130 is provided on the stage 110 and supports the opposing surface of the substrate that is in close contact with the reference surface of the reference body 112.

  On the other hand, the distance between the bottom surface of the chamber 120 and the substrates 12 and 14 varies depending on the inside and outside of the bottom surface of the chamber 120, and the discharge and exhaust pressure are maintained constant in a region where defects are repaired. The distance between the substrate 120 and the substrate 12 and the inner region (region 2) with respect to the shield gas discharge port 126 and the first and second outer regions from the shield gas discharge port 126 to the second exhaust port 125b. (Region 1 and Region 3) are different.

  This is because the air in the process area which is the inner area (area 2) and the first and second outer areas (area 1 and area 3) is moved outside the process area in order to repair defects of the pad 16 electrode. In order to prevent the pressure difference generated by the outflow, the intervals are formed in steps. At this time, in this embodiment, the color filter substrate 14 exposed to the inner region (region 2) and the second outer region (region 3) from the end of the TFT substrate 12 located in the first outer region (region 1). ) Illustrates that the interval gradually increases to the exposed stage 110.

  Further, the distance between the chamber 120 and the substrates 12 and 14 is an element that affects the deposition when the metal electrode of the pad 16 is repaired, so that the inner region (region 2) is used as a reference. It is desirable to adjust the distance between the first and second outer regions (region 1, region 3).

  The first exhaust port 125a exhausts most of the remaining shield gas, purified gas, raw material gas, and the like. The distance between the chamber 120 and the substrates 12 and 14 is based on the case where the thickness of the substrates 12 and 14 is 0.5 mm, and the first outer region (region 1) is 0.5 mm. Yes, the inner region (region 2) is 1 mm and the second outer region (region 3) is 1.5 mm. At this time, the distance between the chamber 120 and the substrates 12 and 14 is relatively increased or decreased according to the thickness of the substrates 12 and 14.

  In contrast, during the interval between the bottom surface of the chamber 120 and the substrates 12, 14, the distance between the surface of the clamp 130 provided in the second outer region (region 3) and the bottom surface of the chamber 120 is set to the inner region ( Same as or substantially the same as area 2). This is to maintain a constant distance between the bottom surface of the chamber 120 and the substrates 12 and 14 in the inner region (region 2) and the second outer region (region 3), thereby making the air flow and pressure uniform. This is for control (see FIGS. 4 and 5).

  As a result, the pad pattern repairing apparatus 100 according to the present invention applies the deposition process to the region where the metal electrode of the pattern 16 provided on the substrate 12 is open. Repair by connecting the two. The vapor deposition is performed in the order of formation of a connection hole (Zapping), filling of a wiring hole (Contact Hole Filling), and connection (Wiring). At this time, if there is an insulating film on the metal electrode of the pattern 16, the deposition proceeds in the order of formation of the connection hole, filling of the wiring hole and connection, and if there is no insulating film, formation of the connection hole and wiring hole Defects can be repaired only by wire connection except the filling stage. Further, when there is an organic material such as an adhesive remaining on the metal electrode of the pattern 16, the organic material in the corresponding region is removed using an ultraviolet laser (UV Laser). At this time, molybdenum (Mo), tungsten (W), copper (Cu), silver (Ag), chromium (Cr), or the like is used as a metal source for forming the electrode. Further, the region where the metal electrode is short-circuited on the substrate 12 is repaired by applying a cutting process to electrically open the shorted region. Further, a probe tip (not shown) that is electrically connected to the pad 16 electrode and measures resistance is further provided, and after the defect repair of the metal electrode, a probe tip (Probe Tip) is provided at both ends of the metal electrode of the pattern 16. After measuring the resistance by touching, it can be determined whether or not the processing is successful. Furthermore, defect repair is possible even when the anisotropic conductive film (ACF), LDI, film, or the like attached to the pad 16 portion is peeled off or attached.

  Although the foregoing detailed description of the invention has been described in terms of a preferred embodiment, the scope of the invention is not limited by the embodiment. Therefore, it should be understood by those skilled in the art that the present invention can be variously modified without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 100: Pad pattern repair apparatus 110: Stage 120: Chamber 121: Laser beam irradiation hole 122: Raw material gas discharge port 123: Purified gas discharge port 124: Optical window 125a: 1st exhaust port 125b: 2nd exhaust port 126: Discharge port 130: Clamp area 1: First outer area area 2: Inner area area 3: Second outer area

Claims (8)

In an apparatus for repairing a defect of a pad electrode provided for applying a signal to any one of a plurality of substrates,
A stage on which the substrate is loaded onto a reference plane;
A first exhaust port and a shield gas discharge port on the bottom surface with a laser beam irradiation hole provided on the stage and moved to a defect position of the pad electrode and formed so that the purified gas and the raw material gas are discharged at the center. And a chamber in which the second exhaust port is sequentially formed,
A clamp that is provided on the stage and supports a facing surface of the substrate that is in close contact with a reference surface,
The pad pattern repairing apparatus, wherein a distance between the substrate and the bottom surface of the chamber varies depending on the inside and outside of the bottom surface of the chamber so that the pressure in a region where the defect is repaired is maintained constant .   The distance between the substrate and the chamber is such that the inner region and the first and second outer regions on both sides from the shield gas exhaust port to the second exhaust port are different with respect to the shield gas exhaust port. The pad pattern repair apparatus according to claim 1.   The space between the substrate and the chamber is provided with clamps in the inner region and the first and second outer regions on both sides from the shield gas discharge port to the second exhaust port with reference to the shield gas discharge port. The pad pattern repair device according to claim 1, wherein a distance between the second outer region and the second outer region is the same.   4. The pad pattern repairing apparatus according to claim 2, wherein a distance between the substrate and the chamber is adjusted between the first and second outer regions with reference to the inner region. 5.   The pad pattern repair device according to claim 1, further comprising a probe tip that is electrically connected to the pad electrode and measures resistance.   The pad pattern repair device repairs a defect by forming a connection hole (Zapping), filling a wiring hole (Contact Hole Filling), and wiring (Wiring) when an insulating film is present on the metal electrode of the pattern. The pad pattern repair device according to claim 1.   The pad pattern repair device according to claim 1, wherein when there is no insulating film on the metal electrode of the pattern, the pad pattern repair device repairs a defect by connection.   The pad pattern repair device according to claim 1, wherein the pad pattern repair device removes organic matter when there is organic matter on the metal electrode of the pattern.

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