JP5527794B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP5527794B2
JP5527794B2 JP2009139829A JP2009139829A JP5527794B2 JP 5527794 B2 JP5527794 B2 JP 5527794B2 JP 2009139829 A JP2009139829 A JP 2009139829A JP 2009139829 A JP2009139829 A JP 2009139829A JP 5527794 B2 JP5527794 B2 JP 5527794B2
Authority
JP
Japan
Prior art keywords
wafer
probe
test
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009139829A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010287700A5 (enExample
JP2010287700A (ja
Inventor
文次 安村
健二 平山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009139829A priority Critical patent/JP5527794B2/ja
Publication of JP2010287700A publication Critical patent/JP2010287700A/ja
Publication of JP2010287700A5 publication Critical patent/JP2010287700A5/ja
Application granted granted Critical
Publication of JP5527794B2 publication Critical patent/JP5527794B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
JP2009139829A 2009-06-11 2009-06-11 半導体装置の製造方法 Expired - Fee Related JP5527794B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009139829A JP5527794B2 (ja) 2009-06-11 2009-06-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009139829A JP5527794B2 (ja) 2009-06-11 2009-06-11 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010287700A JP2010287700A (ja) 2010-12-24
JP2010287700A5 JP2010287700A5 (enExample) 2012-04-05
JP5527794B2 true JP5527794B2 (ja) 2014-06-25

Family

ID=43543193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009139829A Expired - Fee Related JP5527794B2 (ja) 2009-06-11 2009-06-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP5527794B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5529769B2 (ja) * 2011-01-13 2014-06-25 東京エレクトロン株式会社 プローブカードの熱的安定化方法及び検査装置
IL264768A (en) 2019-02-10 2020-08-31 Sagi Irit ANTI-MATRIX METALLOPROTEINASE 7 (MMP-7) inhibitory antibody and its use
WO2021095232A1 (ja) * 2019-11-15 2021-05-20 キオクシア株式会社 ストレージシステム及びウェハ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175289A (ja) * 1991-12-20 1993-07-13 Tokyo Electron Yamanashi Kk プロ−ビング方法及びプロ−ブ装置
JP2005019788A (ja) * 2003-06-27 2005-01-20 Renesas Technology Corp 半導体素子の試験装置および半導体素子の試験方法

Also Published As

Publication number Publication date
JP2010287700A (ja) 2010-12-24

Similar Documents

Publication Publication Date Title
JP7611268B2 (ja) 熱伝導性ウエハーを使用してプローブ要素を熱安定化するデバイス及び方法。
TWI381166B (zh) 檢查用固持構件及檢查用固持構件之製造方法
KR940027122A (ko) 반도체 웨이퍼의 버언 인 검사기능을 구비한 프로우브 검사 및 리페어 장치 및 반도체 웨이퍼의 버언 인 검사장치
JP2002110751A (ja) 半導体集積回路装置の検査装置および製造方法
JP5527794B2 (ja) 半導体装置の製造方法
JP2010267689A (ja) 半導体集積回路装置の製造方法
KR100656586B1 (ko) 프로브 카드 냉각용 공기 분사기를 갖는 웨이퍼 번인 시스템
US20080206907A1 (en) Method for fabricating semiconductor device to which test is performed at wafer level and apparatus for testing semiconductor device
JP2008300655A (ja) ウエハの試験装置及び試験方法
WO2006038257A1 (ja) 半導体装置の製造方法
JP3016992B2 (ja) 半導体ウエハの検査リペア装置及びバーンイン検査装置
TWI253704B (en) Particle-removing wafer
JP2004266206A (ja) プローバ装置、プローブカードのプリヒート方法およびそのプログラム
US9013201B2 (en) Method of testing an object and apparatus for performing the same
JP2017041495A (ja) 半導体検査回路
TW202405435A (zh) 檢查方法
JPH08184612A (ja) 半導体ウェハの検査装置
TWI507700B (zh) 探針台
JP5317330B2 (ja) 半導体集積回路装置の製造方法
TWI871594B (zh) 試驗方法、製造方法、面板級封裝及試驗裝置
JP7317176B1 (ja) 試験方法および製造方法
JPH11133061A (ja) プローブカード及び該プローブカードを用いた試験方法
JP7584737B2 (ja) プローバ用制御装置及びプローバ用制御方法
JP2010210545A (ja) 半導体チップ検査装置
KR101007939B1 (ko) 프로브 카드 가열 방법 및 반도체 웨이퍼 검사 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120217

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130917

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130919

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131111

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20131219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140312

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140319

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140410

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140410

R150 Certificate of patent or registration of utility model

Ref document number: 5527794

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees