JP5522480B2 - フォールトトレラント不揮発性集積回路メモリ - Google Patents

フォールトトレラント不揮発性集積回路メモリ Download PDF

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JP5522480B2
JP5522480B2 JP2010534993A JP2010534993A JP5522480B2 JP 5522480 B2 JP5522480 B2 JP 5522480B2 JP 2010534993 A JP2010534993 A JP 2010534993A JP 2010534993 A JP2010534993 A JP 2010534993A JP 5522480 B2 JP5522480 B2 JP 5522480B2
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data
integrated circuit
circuit memory
memory devices
volatile integrated
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JP2011504270A (ja
JP2011504270A5 (enExample
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ヘンリー ラドキ，ウィリアム
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マイクロン テクノロジー， インク．
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G11C29/765—Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2010534993A 2007-11-21 2008-10-28 フォールトトレラント不揮発性集積回路メモリ Active JP5522480B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/944,023 2007-11-21
US11/944,023 US8046542B2 (en) 2007-11-21 2007-11-21 Fault-tolerant non-volatile integrated circuit memory
PCT/US2008/081473 WO2009067320A1 (en) 2007-11-21 2008-10-28 Fault-tolerant non-volatile integrated circuit memory

Publications (3)

Publication Number Publication Date
JP2011504270A JP2011504270A (ja) 2011-02-03
JP2011504270A5 JP2011504270A5 (enExample) 2011-12-01
JP5522480B2 true JP5522480B2 (ja) 2014-06-18

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JP2010534993A Active JP5522480B2 (ja) 2007-11-21 2008-10-28 フォールトトレラント不揮発性集積回路メモリ

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US (4) US8046542B2 (enExample)
EP (2) EP2227810B1 (enExample)
JP (1) JP5522480B2 (enExample)
KR (1) KR101534888B1 (enExample)
CN (1) CN101868830B (enExample)
TW (1) TWI482018B (enExample)
WO (1) WO2009067320A1 (enExample)

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US9152546B2 (en) 2015-10-06
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