JP5519698B2 - 同色の画素のビニングによるｃｃｄイメージセンサ - Google Patents

同色の画素のビニングによるｃｃｄイメージセンサ Download PDF

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JP5519698B2
JP5519698B2 JP2011542116A JP2011542116A JP5519698B2 JP 5519698 B2 JP5519698 B2 JP 5519698B2 JP 2011542116 A JP2011542116 A JP 2011542116A JP 2011542116 A JP2011542116 A JP 2011542116A JP 5519698 B2 JP5519698 B2 JP 5519698B2
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charge
coupled device
charge coupled
elements
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JP2012513160A (ja
JP2012513160A5 (enExample
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トーマス コンプトム，ジョン
ニューウェル ニコルス，デイヴィッド
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トゥルーセンス イメージング， インコーポレイテッド
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2011542116A 2008-12-19 2009-12-10 同色の画素のビニングによるｃｃｄイメージセンサ Expired - Fee Related JP5519698B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/339,114 2008-12-19
US12/339,114 US8164669B2 (en) 2008-12-19 2008-12-19 Charge-coupled device image sensor with efficient binning of same-color pixels
PCT/US2009/006483 WO2010080098A1 (en) 2008-12-19 2009-12-10 Charge-coupled image sensor with binning same-color pixels

Publications (3)

Publication Number Publication Date
JP2012513160A JP2012513160A (ja) 2012-06-07
JP2012513160A5 JP2012513160A5 (enExample) 2012-10-11
JP5519698B2 true JP5519698B2 (ja) 2014-06-11

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JP2011542116A Expired - Fee Related JP5519698B2 (ja) 2008-12-19 2009-12-10 同色の画素のビニングによるｃｃｄイメージセンサ

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Country Link
US (1) US8164669B2 (enExample)
EP (1) EP2359603B1 (enExample)
JP (1) JP5519698B2 (enExample)
WO (1) WO2010080098A1 (enExample)

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US10658419B2 (en) 2016-09-23 2020-05-19 Apple Inc. Stacked backside illuminated SPAD array
JP6799690B2 (ja) 2017-01-25 2020-12-16 アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． 変調感度を有するｓｐａｄ検出器
US10656251B1 (en) 2017-01-25 2020-05-19 Apple Inc. Signal acquisition in a SPAD detector
US10962628B1 (en) 2017-01-26 2021-03-30 Apple Inc. Spatial temporal weighting in a SPAD detector
US10622538B2 (en) 2017-07-18 2020-04-14 Apple Inc. Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body
US10440301B2 (en) 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
US10848693B2 (en) 2018-07-18 2020-11-24 Apple Inc. Image flare detection using asymmetric pixels
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Also Published As

Publication number Publication date
WO2010080098A1 (en) 2010-07-15
EP2359603A1 (en) 2011-08-24
JP2012513160A (ja) 2012-06-07
EP2359603B1 (en) 2020-02-05
US20100157126A1 (en) 2010-06-24
US8164669B2 (en) 2012-04-24

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