JP5514912B2 - ガラス上の薄膜部品、その製造方法、およびその使用 - Google Patents
ガラス上の薄膜部品、その製造方法、およびその使用 Download PDFInfo
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- JP5514912B2 JP5514912B2 JP2012531303A JP2012531303A JP5514912B2 JP 5514912 B2 JP5514912 B2 JP 5514912B2 JP 2012531303 A JP2012531303 A JP 2012531303A JP 2012531303 A JP2012531303 A JP 2012531303A JP 5514912 B2 JP5514912 B2 JP 5514912B2
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- 239000010409 thin film Substances 0.000 title claims description 75
- 239000011521 glass Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000012528 membrane Substances 0.000 claims description 44
- 239000010408 film Substances 0.000 claims description 36
- 238000007639 printing Methods 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- -1 polypropylene Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000002679 ablation Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000443 aerosol Substances 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- SEBVBMQGOVGVAR-UHFFFAOYSA-N ethene;ethenyl acetate;prop-2-enoic acid Chemical compound C=C.OC(=O)C=C.CC(=O)OC=C SEBVBMQGOVGVAR-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- 230000006870 function Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000032798 delamination Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000010248 power generation Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- JHJNPOSPVGRIAN-SFHVURJKSA-N n-[3-[(1s)-1-[[6-(3,4-dimethoxyphenyl)pyrazin-2-yl]amino]ethyl]phenyl]-5-methylpyridine-3-carboxamide Chemical compound C1=C(OC)C(OC)=CC=C1C1=CN=CC(N[C@@H](C)C=2C=C(NC(=O)C=3C=C(C)C=NC=3)C=CC=2)=N1 JHJNPOSPVGRIAN-SFHVURJKSA-N 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Laminated Bodies (AREA)
- Joining Of Glass To Other Materials (AREA)
Description
を含有する場合に、本発明は特に有利になる。
1 ガラス板
2 膜構造
2a 膜構造の電極
3 導電保護デバイス
4 誘電体保護デバイス
5 ガラス板の外縁
7 コンタクト領域
8 取り付け手段
9 絶縁ライン
Claims (20)
- 薄膜部品(I)であって、膜構造(2)および導電保護デバイス(3)が、ガラス板(1)に付着され、少なくとも1つの誘電体保護膜(4)が、膜構造(2)および導電保護デバイス(3)に付着され、導電保護デバイス(3)とガラス板(1)の外縁(5)との間の距離が、膜構造(2)とガラス板(1)の外縁(5)との間の距離より小さく、導電保護デバイス(3)が、絶縁ライン(9)をともなう膜構造(2)のサブエリアから形成される、前記薄膜部品(I)。
- 導電保護デバイス(3)が、少なくとも1つのコンタクト領域(7)を介して、膜構造(2)の1つの電極(2a)に電気的に接続される、請求項1に記載の薄膜部品(I)。
- 導電性の保護デバイス(3)が、電極(2a)で膜構造(2)の表面電極に電気的に接続される、請求項2に記載の薄膜部品(I)。
- 導電保護デバイス(3)が、電極(2a)で膜構造(2)の裏面電極に電気的に接続される、請求項2に記載の薄膜部品(I)。
- 導電保護デバイス(3)の幅が、0.5mmから5mmである、請求項1から4のいずれか一項に記載の薄膜部品(I)。
- 導電保護デバイス(3)が、少なくとも部分的に膜構造(2)を囲む、請求項1から5のいずれか一項に記載の薄膜部品(I)。
- 導電性取り付け手段(8)が、薄膜部品(I)の外縁(5)に付着される、請求項1から6のいずれか一項に記載の薄膜部品(I)。
- 導電性取り付け手段(8)が、薄膜部品(I)の外縁(5)においてガラス板(1)に付着される、請求項7に記載の薄膜部品(I)。
- 導電性取り付け手段(8)が、少なくとも部分的に薄膜部品(I)を囲む、請求項7または8に記載の薄膜部品(I)。
- 導電保護デバイス(3)が、銀、金、銅、タングステン、ニッケル、クロム、モリブデン、酸化スズ、酸化亜鉛、アルミニウム、二酸化ケイ素、窒化ケイ素、インジウム酸化スズ、ならびに/またはこれらの化合物および混合物を含有する、請求項1から9のいずれか一項に記載の薄膜部品(I)。
- ガラス板(1)が、0.1重量%から20重量%のアルカリ元素を含有する、請求項1から10のいずれか一項に記載の薄膜部品(I)。
- ガラス板(1)が含有するアルカリ元素が、10重量%から16重量%である、請求項11に記載の薄膜部品(I)。
- 誘電体保護膜(4)が、ケイ酸塩ガラス、ポリビニルブチラール(PVB)、ポリウレタン(PU)、ポリプロピレン(PP)、ポリアクリル酸塩、ポリエチレン(PE)、ポリカーボネート(PC)、ポリメタクリル酸メチル、ポリ塩化ビニル、ポリアセテート樹脂、注型用樹脂、アクリレートエチレン酢酸ビニル(EVA)、フッ素化エチレンプロピレン、ポリフッ化ビニル、4フッ化エチレン−エチレン、共重合体、および/またはこれらの混合物を含有する、請求項1から12のいずれか一項に記載の薄膜部品(I)。
- 膜構造(2)が、ケイ素、黄銅鉱、またはテルル化カドミウムを含有する薄膜太陽電池セルを有する、請求項1から13のいずれか一項に記載の薄膜部品(I)。
- 薄膜部品(I)の製造方法であって、
a.膜構造(2)が、ガラス板(1)に付着され、
b.導電保護デバイス(3)が、ガラス板(1)に付着され、
c.少なくとも1つの誘電体保護膜(4)が、膜構造(2)および導電保護デバイス(3)に付着され、および
d.ガラス板(1)、膜構造(2)、導電保護デバイス(3)、および誘電体保護膜(4)が、薄膜部品(I)を形成するように接続され、
導電保護デバイス(3)が、レーザ切断アブレーションまたは機械的研磨により、絶縁ライン(9)をともなう膜構造(2)のサブエリアから形成される、前記方法。 - 導電保護デバイス(3)が、スクリーン印刷、彫版シリンダ印刷、インクジェット印刷、エアロゾルジェット印刷、フレキソ印刷、パルスジェット印刷、および/またはこれらの組み合わせ等の印刷方式によって付着される、請求項15に記載の方法。
- 取り付け手段(8)が、ガラス板(1)の外縁(5)の少なくともサブエリアに、ねじで取り付けられ、クランピングされ、接着剤で接合される、請求項15または16に記載の方法。
- 請求項1から14のいずれか一項に記載の薄膜部品(I)の薄膜太陽電池モジュールとしての使用。
- グランドに対して少なくとも−100Vの負の電位を有する請求項18に記載の薄膜部品の使用。
- グランドに対する負の電位が少なくとも−600Vである請求項19に記載の薄膜部品の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009044142A DE102009044142A1 (de) | 2009-09-30 | 2009-09-30 | Dünnschicht-Bauelement auf Glas, ein Verfahren zu dessen Herstellung und dessen Verwendung |
DE102009044142.5 | 2009-09-30 | ||
PCT/EP2010/062295 WO2011039000A2 (de) | 2009-09-30 | 2010-08-24 | Dünnschicht-bauelement auf glas, ein verfahren zu dessen herstellung und dessen verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013506975A JP2013506975A (ja) | 2013-02-28 |
JP5514912B2 true JP5514912B2 (ja) | 2014-06-04 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012531303A Expired - Fee Related JP5514912B2 (ja) | 2009-09-30 | 2010-08-24 | ガラス上の薄膜部品、その製造方法、およびその使用 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9099588B2 (ja) |
EP (1) | EP2483935A2 (ja) |
JP (1) | JP5514912B2 (ja) |
KR (1) | KR20120080589A (ja) |
CN (1) | CN102576713A (ja) |
DE (1) | DE102009044142A1 (ja) |
WO (1) | WO2011039000A2 (ja) |
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US20230148443A9 (en) * | 2009-12-22 | 2023-05-11 | View, Inc. | Electrochromic cathode materials |
US20220032584A1 (en) * | 2010-11-08 | 2022-02-03 | View, Inc. | Electrochromic window fabrication methods |
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-
2009
- 2009-09-30 DE DE102009044142A patent/DE102009044142A1/de not_active Withdrawn
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2010
- 2010-08-24 EP EP10751883A patent/EP2483935A2/de not_active Withdrawn
- 2010-08-24 CN CN2010800440016A patent/CN102576713A/zh active Pending
- 2010-08-24 JP JP2012531303A patent/JP5514912B2/ja not_active Expired - Fee Related
- 2010-08-24 US US13/395,883 patent/US9099588B2/en not_active Expired - Fee Related
- 2010-08-24 KR KR1020127008049A patent/KR20120080589A/ko not_active Application Discontinuation
- 2010-08-24 WO PCT/EP2010/062295 patent/WO2011039000A2/de active Application Filing
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CN102576713A (zh) | 2012-07-11 |
WO2011039000A2 (de) | 2011-04-07 |
KR20120080589A (ko) | 2012-07-17 |
JP2013506975A (ja) | 2013-02-28 |
US9099588B2 (en) | 2015-08-04 |
EP2483935A2 (de) | 2012-08-08 |
US20120266945A1 (en) | 2012-10-25 |
WO2011039000A3 (de) | 2011-06-03 |
DE102009044142A1 (de) | 2011-03-31 |
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