JP5495476B2 - プラズマプローブ装置およびプラズマプローブ装置を備えたプラズマ処理チャンバ - Google Patents
プラズマプローブ装置およびプラズマプローブ装置を備えたプラズマ処理チャンバ Download PDFInfo
- Publication number
- JP5495476B2 JP5495476B2 JP2007064587A JP2007064587A JP5495476B2 JP 5495476 B2 JP5495476 B2 JP 5495476B2 JP 2007064587 A JP2007064587 A JP 2007064587A JP 2007064587 A JP2007064587 A JP 2007064587A JP 5495476 B2 JP5495476 B2 JP 5495476B2
- Authority
- JP
- Japan
- Prior art keywords
- probe
- plasma
- electrical connector
- probe element
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 239000004065 semiconductor Substances 0.000 claims description 20
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- 125000006850 spacer group Chemical group 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 2
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- 229920001971 elastomer Polymers 0.000 claims description 2
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- 230000007246 mechanism Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/377074 | 2006-03-15 | ||
| US11/377,074 US7479207B2 (en) | 2006-03-15 | 2006-03-15 | Adjustable height PIF probe |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007294419A JP2007294419A (ja) | 2007-11-08 |
| JP2007294419A5 JP2007294419A5 (enExample) | 2010-04-15 |
| JP5495476B2 true JP5495476B2 (ja) | 2014-05-21 |
Family
ID=38516551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007064587A Expired - Fee Related JP5495476B2 (ja) | 2006-03-15 | 2007-03-14 | プラズマプローブ装置およびプラズマプローブ装置を備えたプラズマ処理チャンバ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7479207B2 (enExample) |
| JP (1) | JP5495476B2 (enExample) |
| KR (1) | KR101337754B1 (enExample) |
| CN (1) | CN101039543B (enExample) |
| TW (1) | TWI437928B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7578301B2 (en) * | 2005-03-28 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
| US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| US7967996B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Process for wafer backside polymer removal and wafer front side photoresist removal |
| US20080179007A1 (en) * | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Reactor for wafer backside polymer removal using plasma products in a lower process zone and purge gases in an upper process zone |
| US7699634B2 (en) * | 2007-03-16 | 2010-04-20 | Lam Research Corporation | High power electrical connector for a laminated heater |
| US8043470B2 (en) * | 2007-11-21 | 2011-10-25 | Lam Research Corporation | Electrode/probe assemblies and plasma processing chambers incorporating the same |
| US8849585B2 (en) * | 2008-06-26 | 2014-09-30 | Lam Research Corporation | Methods for automatically characterizing a plasma |
| WO2010005931A2 (en) * | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof |
| CN102084471B (zh) | 2008-07-07 | 2012-11-28 | 朗姆研究公司 | 用于检测等离子体处理室中的等离子体不稳定的无源电容耦合静电(cce)探针装置 |
| WO2010005932A2 (en) * | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber |
| WO2010005929A2 (en) | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting in-situ arcing events in a plasma processing chamber |
| US8164349B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Capacitively-coupled electrostatic (CCE) probe arrangement for detecting strike step in a plasma processing chamber and methods thereof |
| TWI458850B (zh) * | 2008-07-07 | 2014-11-01 | Lam Res Corp | 用來鑑定電漿處理腔室中之薄膜之特性的射頻偏壓電容耦合靜電探針裝置 |
| US9058960B2 (en) | 2012-05-09 | 2015-06-16 | Lam Research Corporation | Compression member for use in showerhead electrode assembly |
| US9856563B2 (en) * | 2012-08-22 | 2018-01-02 | Uchicago Argonne, Llc | Micro-balance sensor integrated with atomic layer deposition chamber |
| US9017513B2 (en) | 2012-11-07 | 2015-04-28 | Lam Research Corporation | Plasma monitoring probe assembly and processing chamber incorporating the same |
| US10496847B2 (en) * | 2017-02-16 | 2019-12-03 | Visa International Service Association | Systems and methods for anonymized behavior analysis |
| CN108650769B (zh) * | 2018-07-25 | 2020-01-03 | 北京航空航天大学 | 高精度朗缪尔探针 |
| CN108696978A (zh) * | 2018-07-25 | 2018-10-23 | 北京航空航天大学 | 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法 |
| CN109104805A (zh) * | 2018-07-25 | 2018-12-28 | 北京航空航天大学 | 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法 |
| CN110402005B (zh) * | 2019-07-16 | 2024-12-10 | 上海红璨科技有限公司 | 一种用于等离子体诊断的中空探针 |
| US11923179B2 (en) * | 2021-03-26 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company Limited | Plasma processing apparatus and method |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943345A (en) * | 1989-03-23 | 1990-07-24 | Board Of Trustees Operating Michigan State University | Plasma reactor apparatus and method for treating a substrate |
| JPH07169590A (ja) * | 1993-09-16 | 1995-07-04 | Fujitsu Ltd | 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置 |
| DE4445762A1 (de) * | 1994-12-21 | 1996-06-27 | Adolf Slaby Inst Forschungsges | Verfahren und Vorrichtung zum Bestimmen absoluter Plasmaparameter |
| JP3208044B2 (ja) * | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| FR2738984B1 (fr) | 1995-09-19 | 1997-11-21 | Centre Nat Rech Scient | Procede et dispositif de mesure d'un flux d'ions dans un plasma |
| JP2000349032A (ja) * | 1999-06-04 | 2000-12-15 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置及びその制御方法 |
| JP2001237097A (ja) | 2000-02-21 | 2001-08-31 | Hitachi Ltd | プラズマ計測方法および計測装置 |
| US6559650B2 (en) * | 2001-06-05 | 2003-05-06 | Eni Technology, Inc. | RF power probe head with a thermally conductive bushing |
| JP2003017295A (ja) | 2001-07-02 | 2003-01-17 | Nisshin:Kk | プラズマ密度情報測定用プローブ |
| US6894474B2 (en) * | 2002-06-07 | 2005-05-17 | Applied Materials, Inc. | Non-intrusive plasma probe |
| US6830650B2 (en) * | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
| JP2005203124A (ja) * | 2004-01-13 | 2005-07-28 | Nisshin:Kk | プラズマ密度情報測定用プローブおよびプラズマ密度情報測定用装着具、プラズマ密度情報測定方法およびその装置、プラズマ処理方法およびその装置 |
| US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| DE112008002223T5 (de) * | 2007-08-21 | 2010-08-05 | Panasonic Corp., Kadoma | Plasmabearbeitungsvorrichtung und Plasmaentladungszustand-Überwachungsvorrichtung |
-
2006
- 2006-03-15 US US11/377,074 patent/US7479207B2/en not_active Expired - Fee Related
-
2007
- 2007-03-05 TW TW096107552A patent/TWI437928B/zh not_active IP Right Cessation
- 2007-03-14 KR KR1020070024856A patent/KR101337754B1/ko not_active Expired - Fee Related
- 2007-03-14 CN CN2007100857556A patent/CN101039543B/zh not_active Expired - Fee Related
- 2007-03-14 JP JP2007064587A patent/JP5495476B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-11 US US12/333,209 patent/US7867355B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101337754B1 (ko) | 2013-12-06 |
| KR20070093883A (ko) | 2007-09-19 |
| JP2007294419A (ja) | 2007-11-08 |
| US20070215285A1 (en) | 2007-09-20 |
| TWI437928B (zh) | 2014-05-11 |
| CN101039543B (zh) | 2011-12-14 |
| US7867355B2 (en) | 2011-01-11 |
| US7479207B2 (en) | 2009-01-20 |
| US20090133836A1 (en) | 2009-05-28 |
| TW200812443A (en) | 2008-03-01 |
| CN101039543A (zh) | 2007-09-19 |
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