KR101337754B1 - 조절가능한 높이의 ｐｉｆ 프로브 - Google Patents

조절가능한 높이의 ｐｉｆ 프로브 Download PDF

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Publication number
KR101337754B1
KR101337754B1 KR1020070024856A KR20070024856A KR101337754B1 KR 101337754 B1 KR101337754 B1 KR 101337754B1 KR 1020070024856 A KR1020070024856 A KR 1020070024856A KR 20070024856 A KR20070024856 A KR 20070024856A KR 101337754 B1 KR101337754 B1 KR 101337754B1
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South Korea
Prior art keywords
probe
probe element
electrical connector
sleeve
electrically insulating
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070024856A
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English (en)
Korean (ko)
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KR20070093883A (ko
Inventor
크리스토퍼 킴벌
에릭 허드슨
더글라스 카일
알렉세이 마라크타노브
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020070024856A 2006-03-15 2007-03-14 조절가능한 높이의 ｐｉｆ 프로브 Expired - Fee Related KR101337754B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/377,074 2006-03-15
US11/377,074 US7479207B2 (en) 2006-03-15 2006-03-15 Adjustable height PIF probe

Publications (2)

Publication Number Publication Date
KR20070093883A KR20070093883A (ko) 2007-09-19
KR101337754B1 true KR101337754B1 (ko) 2013-12-06

Family

ID=38516551

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070024856A Expired - Fee Related KR101337754B1 (ko) 2006-03-15 2007-03-14 조절가능한 높이의 ｐｉｆ 프로브

Country Status (5)

Country Link
US (2) US7479207B2 (enExample)
JP (1) JP5495476B2 (enExample)
KR (1) KR101337754B1 (enExample)
CN (1) CN101039543B (enExample)
TW (1) TWI437928B (enExample)

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US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US7967996B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
US20080179007A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Reactor for wafer backside polymer removal using plasma products in a lower process zone and purge gases in an upper process zone
US7699634B2 (en) * 2007-03-16 2010-04-20 Lam Research Corporation High power electrical connector for a laminated heater
US8043470B2 (en) * 2007-11-21 2011-10-25 Lam Research Corporation Electrode/probe assemblies and plasma processing chambers incorporating the same
US8849585B2 (en) * 2008-06-26 2014-09-30 Lam Research Corporation Methods for automatically characterizing a plasma
WO2010005931A2 (en) * 2008-07-07 2010-01-14 Lam Research Corporation Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof
CN102084471B (zh) 2008-07-07 2012-11-28 朗姆研究公司 用于检测等离子体处理室中的等离子体不稳定的无源电容耦合静电(cce)探针装置
WO2010005932A2 (en) * 2008-07-07 2010-01-14 Lam Research Corporation Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
WO2010005929A2 (en) 2008-07-07 2010-01-14 Lam Research Corporation Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting in-situ arcing events in a plasma processing chamber
US8164349B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Capacitively-coupled electrostatic (CCE) probe arrangement for detecting strike step in a plasma processing chamber and methods thereof
TWI458850B (zh) * 2008-07-07 2014-11-01 Lam Res Corp 用來鑑定電漿處理腔室中之薄膜之特性的射頻偏壓電容耦合靜電探針裝置
US9058960B2 (en) 2012-05-09 2015-06-16 Lam Research Corporation Compression member for use in showerhead electrode assembly
US9856563B2 (en) * 2012-08-22 2018-01-02 Uchicago Argonne, Llc Micro-balance sensor integrated with atomic layer deposition chamber
US9017513B2 (en) 2012-11-07 2015-04-28 Lam Research Corporation Plasma monitoring probe assembly and processing chamber incorporating the same
US10496847B2 (en) * 2017-02-16 2019-12-03 Visa International Service Association Systems and methods for anonymized behavior analysis
CN108650769B (zh) * 2018-07-25 2020-01-03 北京航空航天大学 高精度朗缪尔探针
CN108696978A (zh) * 2018-07-25 2018-10-23 北京航空航天大学 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法
CN109104805A (zh) * 2018-07-25 2018-12-28 北京航空航天大学 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法
CN110402005B (zh) * 2019-07-16 2024-12-10 上海红璨科技有限公司 一种用于等离子体诊断的中空探针
US11923179B2 (en) * 2021-03-26 2024-03-05 Taiwan Semiconductor Manufacturing Company Limited Plasma processing apparatus and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222396A (ja) * 1994-12-21 1996-08-30 Adolph Slaby Inst Forsch G Fuer Plasmatechnol & Mikrostrukturierung Mbh 絶対プラズマパラメータを決定する方法およびその装置
JP2001237097A (ja) 2000-02-21 2001-08-31 Hitachi Ltd プラズマ計測方法および計測装置
JP2003017295A (ja) 2001-07-02 2003-01-17 Nisshin:Kk プラズマ密度情報測定用プローブ
JP2005203124A (ja) * 2004-01-13 2005-07-28 Nisshin:Kk プラズマ密度情報測定用プローブおよびプラズマ密度情報測定用装着具、プラズマ密度情報測定方法およびその装置、プラズマ処理方法およびその装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
JPH07169590A (ja) * 1993-09-16 1995-07-04 Fujitsu Ltd 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
FR2738984B1 (fr) 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
JP2000349032A (ja) * 1999-06-04 2000-12-15 Mitsubishi Heavy Ind Ltd プラズマ処理装置及びその制御方法
US6559650B2 (en) * 2001-06-05 2003-05-06 Eni Technology, Inc. RF power probe head with a thermally conductive bushing
US6894474B2 (en) * 2002-06-07 2005-05-17 Applied Materials, Inc. Non-intrusive plasma probe
US6830650B2 (en) * 2002-07-12 2004-12-14 Advanced Energy Industries, Inc. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
DE112008002223T5 (de) * 2007-08-21 2010-08-05 Panasonic Corp., Kadoma Plasmabearbeitungsvorrichtung und Plasmaentladungszustand-Überwachungsvorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222396A (ja) * 1994-12-21 1996-08-30 Adolph Slaby Inst Forsch G Fuer Plasmatechnol & Mikrostrukturierung Mbh 絶対プラズマパラメータを決定する方法およびその装置
JP2001237097A (ja) 2000-02-21 2001-08-31 Hitachi Ltd プラズマ計測方法および計測装置
JP2003017295A (ja) 2001-07-02 2003-01-17 Nisshin:Kk プラズマ密度情報測定用プローブ
JP2005203124A (ja) * 2004-01-13 2005-07-28 Nisshin:Kk プラズマ密度情報測定用プローブおよびプラズマ密度情報測定用装着具、プラズマ密度情報測定方法およびその装置、プラズマ処理方法およびその装置

Also Published As

Publication number Publication date
KR20070093883A (ko) 2007-09-19
JP2007294419A (ja) 2007-11-08
US20070215285A1 (en) 2007-09-20
TWI437928B (zh) 2014-05-11
CN101039543B (zh) 2011-12-14
JP5495476B2 (ja) 2014-05-21
US7867355B2 (en) 2011-01-11
US7479207B2 (en) 2009-01-20
US20090133836A1 (en) 2009-05-28
TW200812443A (en) 2008-03-01
CN101039543A (zh) 2007-09-19

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