TWI437928B - 可調整高度的電漿離子通量探針 - Google Patents
可調整高度的電漿離子通量探針 Download PDFInfo
- Publication number
- TWI437928B TWI437928B TW096107552A TW96107552A TWI437928B TW I437928 B TWI437928 B TW I437928B TW 096107552 A TW096107552 A TW 096107552A TW 96107552 A TW96107552 A TW 96107552A TW I437928 B TWI437928 B TW I437928B
- Authority
- TW
- Taiwan
- Prior art keywords
- probe
- plasma
- probe element
- electrical connector
- lip
- Prior art date
Links
- 239000000523 sample Substances 0.000 title claims description 177
- 239000004065 semiconductor Substances 0.000 claims description 23
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004816 latex Substances 0.000 description 2
- 229920000126 latex Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QUTHCURCAWPHIN-UHFFFAOYSA-N 4-[2-(1-methyl-5-nitroimidazol-2-yl)ethynyl]pyrimidin-2-amine Chemical compound C1=C([N+]([O-])=O)N(C)C(C#CC=2N=C(N)N=CC=2)=N1 QUTHCURCAWPHIN-UHFFFAOYSA-N 0.000 description 1
- -1 BCl 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910017840 NH 3 Inorganic materials 0.000 description 1
- 229910018194 SF 6 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/377,074 US7479207B2 (en) | 2006-03-15 | 2006-03-15 | Adjustable height PIF probe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200812443A TW200812443A (en) | 2008-03-01 |
| TWI437928B true TWI437928B (zh) | 2014-05-11 |
Family
ID=38516551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096107552A TWI437928B (zh) | 2006-03-15 | 2007-03-05 | 可調整高度的電漿離子通量探針 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7479207B2 (enExample) |
| JP (1) | JP5495476B2 (enExample) |
| KR (1) | KR101337754B1 (enExample) |
| CN (1) | CN101039543B (enExample) |
| TW (1) | TWI437928B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7578301B2 (en) * | 2005-03-28 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
| US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| US7967996B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Process for wafer backside polymer removal and wafer front side photoresist removal |
| US20080179007A1 (en) * | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Reactor for wafer backside polymer removal using plasma products in a lower process zone and purge gases in an upper process zone |
| US7699634B2 (en) * | 2007-03-16 | 2010-04-20 | Lam Research Corporation | High power electrical connector for a laminated heater |
| US8043470B2 (en) * | 2007-11-21 | 2011-10-25 | Lam Research Corporation | Electrode/probe assemblies and plasma processing chambers incorporating the same |
| US8849585B2 (en) * | 2008-06-26 | 2014-09-30 | Lam Research Corporation | Methods for automatically characterizing a plasma |
| WO2010005931A2 (en) * | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof |
| CN102084471B (zh) | 2008-07-07 | 2012-11-28 | 朗姆研究公司 | 用于检测等离子体处理室中的等离子体不稳定的无源电容耦合静电(cce)探针装置 |
| WO2010005932A2 (en) * | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber |
| WO2010005929A2 (en) | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting in-situ arcing events in a plasma processing chamber |
| US8164349B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Capacitively-coupled electrostatic (CCE) probe arrangement for detecting strike step in a plasma processing chamber and methods thereof |
| TWI458850B (zh) * | 2008-07-07 | 2014-11-01 | Lam Res Corp | 用來鑑定電漿處理腔室中之薄膜之特性的射頻偏壓電容耦合靜電探針裝置 |
| US9058960B2 (en) | 2012-05-09 | 2015-06-16 | Lam Research Corporation | Compression member for use in showerhead electrode assembly |
| US9856563B2 (en) * | 2012-08-22 | 2018-01-02 | Uchicago Argonne, Llc | Micro-balance sensor integrated with atomic layer deposition chamber |
| US9017513B2 (en) | 2012-11-07 | 2015-04-28 | Lam Research Corporation | Plasma monitoring probe assembly and processing chamber incorporating the same |
| US10496847B2 (en) * | 2017-02-16 | 2019-12-03 | Visa International Service Association | Systems and methods for anonymized behavior analysis |
| CN108650769B (zh) * | 2018-07-25 | 2020-01-03 | 北京航空航天大学 | 高精度朗缪尔探针 |
| CN108696978A (zh) * | 2018-07-25 | 2018-10-23 | 北京航空航天大学 | 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法 |
| CN109104805A (zh) * | 2018-07-25 | 2018-12-28 | 北京航空航天大学 | 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法 |
| CN110402005B (zh) * | 2019-07-16 | 2024-12-10 | 上海红璨科技有限公司 | 一种用于等离子体诊断的中空探针 |
| US11923179B2 (en) * | 2021-03-26 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company Limited | Plasma processing apparatus and method |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943345A (en) * | 1989-03-23 | 1990-07-24 | Board Of Trustees Operating Michigan State University | Plasma reactor apparatus and method for treating a substrate |
| JPH07169590A (ja) * | 1993-09-16 | 1995-07-04 | Fujitsu Ltd | 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置 |
| DE4445762A1 (de) * | 1994-12-21 | 1996-06-27 | Adolf Slaby Inst Forschungsges | Verfahren und Vorrichtung zum Bestimmen absoluter Plasmaparameter |
| JP3208044B2 (ja) * | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| FR2738984B1 (fr) | 1995-09-19 | 1997-11-21 | Centre Nat Rech Scient | Procede et dispositif de mesure d'un flux d'ions dans un plasma |
| JP2000349032A (ja) * | 1999-06-04 | 2000-12-15 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置及びその制御方法 |
| JP2001237097A (ja) | 2000-02-21 | 2001-08-31 | Hitachi Ltd | プラズマ計測方法および計測装置 |
| US6559650B2 (en) * | 2001-06-05 | 2003-05-06 | Eni Technology, Inc. | RF power probe head with a thermally conductive bushing |
| JP2003017295A (ja) | 2001-07-02 | 2003-01-17 | Nisshin:Kk | プラズマ密度情報測定用プローブ |
| US6894474B2 (en) * | 2002-06-07 | 2005-05-17 | Applied Materials, Inc. | Non-intrusive plasma probe |
| US6830650B2 (en) * | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
| JP2005203124A (ja) * | 2004-01-13 | 2005-07-28 | Nisshin:Kk | プラズマ密度情報測定用プローブおよびプラズマ密度情報測定用装着具、プラズマ密度情報測定方法およびその装置、プラズマ処理方法およびその装置 |
| US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| DE112008002223T5 (de) * | 2007-08-21 | 2010-08-05 | Panasonic Corp., Kadoma | Plasmabearbeitungsvorrichtung und Plasmaentladungszustand-Überwachungsvorrichtung |
-
2006
- 2006-03-15 US US11/377,074 patent/US7479207B2/en not_active Expired - Fee Related
-
2007
- 2007-03-05 TW TW096107552A patent/TWI437928B/zh not_active IP Right Cessation
- 2007-03-14 KR KR1020070024856A patent/KR101337754B1/ko not_active Expired - Fee Related
- 2007-03-14 CN CN2007100857556A patent/CN101039543B/zh not_active Expired - Fee Related
- 2007-03-14 JP JP2007064587A patent/JP5495476B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-11 US US12/333,209 patent/US7867355B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101337754B1 (ko) | 2013-12-06 |
| KR20070093883A (ko) | 2007-09-19 |
| JP2007294419A (ja) | 2007-11-08 |
| US20070215285A1 (en) | 2007-09-20 |
| CN101039543B (zh) | 2011-12-14 |
| JP5495476B2 (ja) | 2014-05-21 |
| US7867355B2 (en) | 2011-01-11 |
| US7479207B2 (en) | 2009-01-20 |
| US20090133836A1 (en) | 2009-05-28 |
| TW200812443A (en) | 2008-03-01 |
| CN101039543A (zh) | 2007-09-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |