JP5489528B2 - 光電変換装置の製造方法 - Google Patents
光電変換装置の製造方法 Download PDFInfo
- Publication number
- JP5489528B2 JP5489528B2 JP2009115921A JP2009115921A JP5489528B2 JP 5489528 B2 JP5489528 B2 JP 5489528B2 JP 2009115921 A JP2009115921 A JP 2009115921A JP 2009115921 A JP2009115921 A JP 2009115921A JP 5489528 B2 JP5489528 B2 JP 5489528B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- insulating film
- holes
- hole
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000005498 polishing Methods 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 31
- 239000010410 layer Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910000765 intermetallic Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 description 55
- 238000003384 imaging method Methods 0.000 description 24
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000002265 prevention Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (9)
- 光電変換装置の製造方法であって、
複数の光電変換部を有する半導体基板と前記半導体基板の上に配置された絶縁膜とを有し、前記絶縁膜が、第1の深さを有する複数の第1の穴と、それぞれ前記複数の光電変換部の上に配置され前記第1の深さよりも小さい第2の深さを有する複数の第2の穴とを有する構造を準備する工程と、
前記絶縁膜とは異なる材料で前記複数の第1の穴および前記複数の第2の穴を埋める工程と、
化学的機械的研磨により前記複数の第2の穴がなくなるまで前記絶縁膜を部分的に除去する工程と、を含み、
前記半導体基板の表面に垂直な方向から見たときに、前記複数の第2の穴の各々は、前記複数の光電変換部のうちの対応する光電変換部の領域内に収まるように配置されている、
ことを特徴とする光電変換装置の製造方法。 - 前記絶縁膜を部分的に除去する工程は、前記第2の穴より深い位置まで化学的機械的研磨を行うことを含む、
ことを特徴とする請求項1に記載の光電変換装置の製造方法。 - 前記第1の穴にビアプラグ又は配線が形成される、
ことを特徴とする請求項1又は2に記載の光電変換装置の製造方法。 - 前記構造は、前記複数の第1の穴および前記複数の第2の穴を含む複数の穴が均一な配列ピッチで配置された部分を含む、
ことを特徴とする請求項1乃至3のいずれか1項に記載の光電変換装置の製造方法。 - 前記構造は、前記複数の光電変換部のそれぞれのための開口領域を規定する複数の配線を含み、前記複数の第2の穴の各々は、前記複数の配線のうちの隣接する配線の間に配置されている、
ことを特徴とする請求項1乃至4のいずれか1項に記載の光電変換装置の製造方法。 - 前記構造を準備する工程は、前記複数の第1の穴および前記複数の第2の穴をエッチングによって形成する工程を含む、
ことを特徴とする請求項1乃至5のいずれか1項に記載の光電変換装置の製造方法。 - 前記材料は、TiNの単層構造又はTi/TiNの2層構造のバリアメタルと、Cu、W、Al、TiN、Ti、Ta、及びTaNの少なくとも1つを主成分とする金属又は金属間化合物とを含む、
ことを特徴とする請求項1乃至6のいずれか1項に記載の光電変換装置の製造方法。 - 前記複数の第1の穴は、プラグのための穴を含む、
ことを特徴とする請求項1乃至7のいずれか1項に記載の光電変換装置の製造方法。 - 前記絶縁膜が、前記第2の深さを有する第3の穴を更に有する、
ことを特徴とする請求項1乃至8のいずれか1項に記載の光電変換装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009115921A JP5489528B2 (ja) | 2009-05-12 | 2009-05-12 | 光電変換装置の製造方法 |
US12/754,201 US8039293B2 (en) | 2009-05-12 | 2010-04-05 | Method of manufacturing photoelectric conversion device |
US13/228,186 US8334167B2 (en) | 2009-05-12 | 2011-09-08 | Method of manufacturing photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009115921A JP5489528B2 (ja) | 2009-05-12 | 2009-05-12 | 光電変換装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010267681A JP2010267681A (ja) | 2010-11-25 |
JP2010267681A5 JP2010267681A5 (ja) | 2012-06-28 |
JP5489528B2 true JP5489528B2 (ja) | 2014-05-14 |
Family
ID=43068843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009115921A Expired - Fee Related JP5489528B2 (ja) | 2009-05-12 | 2009-05-12 | 光電変換装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8039293B2 (ja) |
JP (1) | JP5489528B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012015268A (ja) * | 2010-06-30 | 2012-01-19 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及び半導体装置 |
JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5643555B2 (ja) | 2010-07-07 | 2014-12-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5697371B2 (ja) | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5751766B2 (ja) * | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
US8883638B2 (en) * | 2012-01-18 | 2014-11-11 | United Microelectronics Corp. | Method for manufacturing damascene structure involving dummy via holes |
TWI550713B (zh) * | 2012-01-18 | 2016-09-21 | 聯華電子股份有限公司 | 鑲嵌結構製作方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100243272B1 (ko) * | 1996-12-20 | 2000-03-02 | 윤종용 | 반도체 소자의 콘택 플러그 형성방법 |
JP3414656B2 (ja) | 1998-11-16 | 2003-06-09 | シャープ株式会社 | 半導体装置及びその製造方法 |
US6214745B1 (en) * | 1998-11-19 | 2001-04-10 | United Microelectronics Corp. | Method of improving surface planarity of chemical-mechanical polishing operation by forming shallow dummy pattern |
JP2000223492A (ja) * | 1999-01-29 | 2000-08-11 | Nec Corp | 多層配線を有する半導体装置の製造方法 |
JP2001118845A (ja) * | 1999-10-20 | 2001-04-27 | Nec Corp | ダマシン配線の形成方法及び半導体装置 |
JP4147861B2 (ja) * | 2002-08-06 | 2008-09-10 | ソニー株式会社 | 固体撮像素子の製造方法 |
FR2844096A1 (fr) * | 2002-08-30 | 2004-03-05 | St Microelectronics Sa | Procede de fabrication d'un circuit electrique comprenant une etape de polissage |
JP2004104203A (ja) * | 2002-09-05 | 2004-04-02 | Toshiba Corp | 固体撮像装置 |
JP2004304012A (ja) * | 2003-03-31 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
JP4338614B2 (ja) | 2004-09-29 | 2009-10-07 | シャープ株式会社 | 半導体装置およびその製造方法 |
US7633106B2 (en) * | 2005-11-09 | 2009-12-15 | International Business Machines Corporation | Light shield for CMOS imager |
JP2007258328A (ja) * | 2006-03-22 | 2007-10-04 | Fujitsu Ltd | 半導体装置及びその製造方法 |
KR20080006117A (ko) * | 2006-07-11 | 2008-01-16 | 동부일렉트로닉스 주식회사 | 이미지 센서의 배선 구조 및 그 제조 방법 |
JP4735643B2 (ja) * | 2007-12-28 | 2011-07-27 | ソニー株式会社 | 固体撮像装置、カメラ及び電子機器 |
-
2009
- 2009-05-12 JP JP2009115921A patent/JP5489528B2/ja not_active Expired - Fee Related
-
2010
- 2010-04-05 US US12/754,201 patent/US8039293B2/en not_active Expired - Fee Related
-
2011
- 2011-09-08 US US13/228,186 patent/US8334167B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8039293B2 (en) | 2011-10-18 |
US8334167B2 (en) | 2012-12-18 |
US20110318873A1 (en) | 2011-12-29 |
JP2010267681A (ja) | 2010-11-25 |
US20100291729A1 (en) | 2010-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI445167B (zh) | 固態成像器件,其製造方法及電子裝置 | |
JP5489528B2 (ja) | 光電変換装置の製造方法 | |
US9385152B2 (en) | Solid-state image pickup device and image pickup system | |
KR101941709B1 (ko) | 반도체 장치, 반도체 장치의 제조 방법, 고체 촬상 장치 및 전자 기기 | |
KR100614793B1 (ko) | 이미지 센서 및 이의 제조 방법. | |
JP5760923B2 (ja) | 固体撮像装置の製造方法 | |
JP4935838B2 (ja) | 固体撮像素子及びその製造方法、電子機器 | |
JP2013214616A (ja) | 固体撮像装置、固体撮像装置の製造方法及び電子機器 | |
JP6440384B2 (ja) | 半導体装置の製造方法 | |
TW201740550A (zh) | 貫穿半導體通孔覆蓋層作為蝕刻停止層 | |
JP2010087190A (ja) | 光電変換装置及び光電変換装置の製造方法 | |
JP2012182431A (ja) | 固体撮像装置、及び固体撮像装置の製造方法 | |
JP5948783B2 (ja) | 固体撮像装置、および電子機器 | |
JP5987275B2 (ja) | 固体撮像装置、固体撮像装置の製造方法、および電子機器 | |
JP5159120B2 (ja) | 光電変換装置およびその製造方法 | |
US7683411B2 (en) | Image sensor and method of manufacturing the same | |
JP5563257B2 (ja) | 光電変換装置、撮像システム、及び光電変換装置の製造方法 | |
JP2010287638A (ja) | 固体撮像装置とその製造方法および撮像装置 | |
JP5950531B2 (ja) | 半導体装置の製造方法及び半導体ウエハ | |
JP2010219233A (ja) | 半導体装置の製造方法 | |
JP5092379B2 (ja) | 固体撮像装置及びその製造方法並びに撮像装置 | |
JP5539426B2 (ja) | 撮像装置の製造方法 | |
JP2011018710A (ja) | 固体撮像装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120511 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120511 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131114 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131115 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140127 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140225 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5489528 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |