JP5476269B2 - 成膜方法及び成膜装置 - Google Patents

成膜方法及び成膜装置 Download PDF

Info

Publication number
JP5476269B2
JP5476269B2 JP2010219947A JP2010219947A JP5476269B2 JP 5476269 B2 JP5476269 B2 JP 5476269B2 JP 2010219947 A JP2010219947 A JP 2010219947A JP 2010219947 A JP2010219947 A JP 2010219947A JP 5476269 B2 JP5476269 B2 JP 5476269B2
Authority
JP
Japan
Prior art keywords
gas
film
flow rate
film forming
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010219947A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012072475A5 (https=
JP2012072475A (ja
Inventor
裕 布重
英亮 山▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010219947A priority Critical patent/JP5476269B2/ja
Priority to TW100134922A priority patent/TWI557263B/zh
Priority to KR1020110098074A priority patent/KR101290957B1/ko
Priority to CN201110303097.XA priority patent/CN102433546B/zh
Publication of JP2012072475A publication Critical patent/JP2012072475A/ja
Publication of JP2012072475A5 publication Critical patent/JP2012072475A5/ja
Application granted granted Critical
Publication of JP5476269B2 publication Critical patent/JP5476269B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2010219947A 2010-09-29 2010-09-29 成膜方法及び成膜装置 Expired - Fee Related JP5476269B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010219947A JP5476269B2 (ja) 2010-09-29 2010-09-29 成膜方法及び成膜装置
TW100134922A TWI557263B (zh) 2010-09-29 2011-09-28 Film forming method and film forming device
KR1020110098074A KR101290957B1 (ko) 2010-09-29 2011-09-28 성막 방법 및 성막 장치
CN201110303097.XA CN102433546B (zh) 2010-09-29 2011-09-29 成膜方法和成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010219947A JP5476269B2 (ja) 2010-09-29 2010-09-29 成膜方法及び成膜装置

Publications (3)

Publication Number Publication Date
JP2012072475A JP2012072475A (ja) 2012-04-12
JP2012072475A5 JP2012072475A5 (https=) 2013-05-16
JP5476269B2 true JP5476269B2 (ja) 2014-04-23

Family

ID=45981890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010219947A Expired - Fee Related JP5476269B2 (ja) 2010-09-29 2010-09-29 成膜方法及び成膜装置

Country Status (4)

Country Link
JP (1) JP5476269B2 (https=)
KR (1) KR101290957B1 (https=)
CN (1) CN102433546B (https=)
TW (1) TWI557263B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102061749B1 (ko) * 2012-12-27 2020-01-02 주식회사 무한 기판 처리 장치
JP6199619B2 (ja) 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6492736B2 (ja) 2015-02-17 2019-04-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP2018113322A (ja) 2017-01-11 2018-07-19 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
CN107093577A (zh) * 2017-04-17 2017-08-25 上海华虹宏力半导体制造有限公司 接触孔的制造方法
US11075105B2 (en) * 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
JP6777614B2 (ja) 2017-09-26 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7531351B2 (ja) * 2019-11-13 2024-08-09 東京エレクトロン株式会社 基板処理方法、基板処理装置、および基板処理システム
KR102849177B1 (ko) * 2020-05-08 2025-08-25 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629236A (ja) * 1992-07-07 1994-02-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
TW554382B (en) * 1998-06-09 2003-09-21 Tokyo Electron Ltd Method of forming TiSiN film, diffusion preventing film and semiconductor device constituted by TiSiN film and method of producing the same, and TiSiN film forming device
JP4545433B2 (ja) * 2003-12-26 2010-09-15 東京エレクトロン株式会社 成膜方法
KR100735938B1 (ko) * 2004-04-09 2007-07-06 동경 엘렉트론 주식회사 Ｔｉ막 및 ＴｉＮ막의 성막 방법, 접촉 구조체 및 컴퓨터 판독 가능한 기억 매체
KR20090026186A (ko) * 2006-07-11 2009-03-11 도쿄엘렉트론가부시키가이샤 성막 방법, 클리닝 방법 및 성막 장치

Also Published As

Publication number Publication date
CN102433546B (zh) 2015-01-07
KR20120033264A (ko) 2012-04-06
KR101290957B1 (ko) 2013-07-30
TW201229294A (en) 2012-07-16
CN102433546A (zh) 2012-05-02
TWI557263B (zh) 2016-11-11
JP2012072475A (ja) 2012-04-12

Similar Documents

Publication Publication Date Title
JP5476269B2 (ja) 成膜方法及び成膜装置
US8006640B2 (en) Plasma processing apparatus and plasma processing method
JP6554418B2 (ja) タングステン膜の成膜方法および成膜装置
US9396930B2 (en) Substrate processing apparatus
US20190161853A1 (en) Method for forming tungsten film
JP6426893B2 (ja) コンタクト層の形成方法
CN107723682B (zh) 成膜装置和其使用的气体排出部件
TWI726837B (zh) Ｔｉ膜之成膜方法
CN109504952B (zh) 气体供给装置和成膜装置
JP2018080349A (ja) ＴｉＮ系膜およびその形成方法
KR102179260B1 (ko) 성막 방법
JP5171192B2 (ja) 金属膜成膜方法
WO2010001931A1 (ja) 薄膜の成膜方法及び成膜装置
JPWO2010067856A1 (ja) 成膜方法および成膜装置
JP5560589B2 (ja) 成膜方法及びプラズマ成膜装置
JP5193494B2 (ja) Ｔｉ膜の成膜方法および記憶媒体
JP2010180434A (ja) 成膜方法及びプラズマ成膜装置
JP2010111888A (ja) Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体
KR20090060198A (ko) 타이타늄막의 성막 방법 및 타이타늄막의 성막 장치
WO2022224863A1 (ja) 成膜方法及び成膜装置
KR20250165329A (ko) 기판 처리 장치, 기판 처리 방법, 반도체 장치의 제조 방법 및 프로그램
JP2023072426A (ja) 成膜方法、および多結晶シリコン膜の形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130403

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130403

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140124

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140129

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140207

R150 Certificate of patent or registration of utility model

Ref document number: 5476269

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees