KR101290957B1 - 성막 방법 및 성막 장치 - Google Patents

성막 방법 및 성막 장치 Download PDF

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Publication number
KR101290957B1
KR101290957B1 KR1020110098074A KR20110098074A KR101290957B1 KR 101290957 B1 KR101290957 B1 KR 101290957B1 KR 1020110098074 A KR1020110098074 A KR 1020110098074A KR 20110098074 A KR20110098074 A KR 20110098074A KR 101290957 B1 KR101290957 B1 KR 101290957B1
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Prior art keywords
gas
film
flow rate
film forming
reaction
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Korean (ko)
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KR20120033264A (ko
Inventor
유우 누노시게
히데아끼 야마사끼
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020110098074A 2010-09-29 2011-09-28 성막 방법 및 성막 장치 Active KR101290957B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010219947A JP5476269B2 (ja) 2010-09-29 2010-09-29 成膜方法及び成膜装置
JPJP-P-2010-219947 2010-09-29

Publications (2)

Publication Number Publication Date
KR20120033264A KR20120033264A (ko) 2012-04-06
KR101290957B1 true KR101290957B1 (ko) 2013-07-30

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KR1020110098074A Active KR101290957B1 (ko) 2010-09-29 2011-09-28 성막 방법 및 성막 장치

Country Status (4)

Country Link
JP (1) JP5476269B2 (https=)
KR (1) KR101290957B1 (https=)
CN (1) CN102433546B (https=)
TW (1) TWI557263B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102061749B1 (ko) * 2012-12-27 2020-01-02 주식회사 무한 기판 처리 장치
JP6199619B2 (ja) 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6492736B2 (ja) 2015-02-17 2019-04-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP2018113322A (ja) 2017-01-11 2018-07-19 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
CN107093577A (zh) * 2017-04-17 2017-08-25 上海华虹宏力半导体制造有限公司 接触孔的制造方法
US11075105B2 (en) * 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
JP6777614B2 (ja) 2017-09-26 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7531351B2 (ja) * 2019-11-13 2024-08-09 東京エレクトロン株式会社 基板処理方法、基板処理装置、および基板処理システム
KR102849177B1 (ko) * 2020-05-08 2025-08-25 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629236A (ja) * 1992-07-07 1994-02-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2005194540A (ja) * 2003-12-26 2005-07-21 Tokyo Electron Ltd 成膜方法及び半導体装置
KR20090026186A (ko) * 2006-07-11 2009-03-11 도쿄엘렉트론가부시키가이샤 성막 방법, 클리닝 방법 및 성막 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554382B (en) * 1998-06-09 2003-09-21 Tokyo Electron Ltd Method of forming TiSiN film, diffusion preventing film and semiconductor device constituted by TiSiN film and method of producing the same, and TiSiN film forming device
KR100735938B1 (ko) * 2004-04-09 2007-07-06 동경 엘렉트론 주식회사 Ｔｉ막 및 ＴｉＮ막의 성막 방법, 접촉 구조체 및 컴퓨터 판독 가능한 기억 매체

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629236A (ja) * 1992-07-07 1994-02-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2005194540A (ja) * 2003-12-26 2005-07-21 Tokyo Electron Ltd 成膜方法及び半導体装置
KR20090026186A (ko) * 2006-07-11 2009-03-11 도쿄엘렉트론가부시키가이샤 성막 방법, 클리닝 방법 및 성막 장치

Also Published As

Publication number Publication date
CN102433546B (zh) 2015-01-07
KR20120033264A (ko) 2012-04-06
TW201229294A (en) 2012-07-16
CN102433546A (zh) 2012-05-02
TWI557263B (zh) 2016-11-11
JP2012072475A (ja) 2012-04-12
JP5476269B2 (ja) 2014-04-23

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