JP5473004B2 - 走査荷電粒子ビーム - Google Patents
走査荷電粒子ビーム Download PDFInfo
- Publication number
- JP5473004B2 JP5473004B2 JP2010538606A JP2010538606A JP5473004B2 JP 5473004 B2 JP5473004 B2 JP 5473004B2 JP 2010538606 A JP2010538606 A JP 2010538606A JP 2010538606 A JP2010538606 A JP 2010538606A JP 5473004 B2 JP5473004 B2 JP 5473004B2
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- JP
- Japan
- Prior art keywords
- sample
- ion beam
- region
- less
- charged particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002245 particle Substances 0.000 title claims abstract description 203
- 238000000034 method Methods 0.000 claims abstract description 90
- 150000002500 ions Chemical class 0.000 claims description 263
- 239000007789 gas Substances 0.000 claims description 123
- 229910052734 helium Inorganic materials 0.000 claims description 45
- 239000001307 helium Substances 0.000 claims description 40
- 230000007935 neutral effect Effects 0.000 claims description 29
- -1 helium ions Chemical class 0.000 claims description 19
- 229910052756 noble gas Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 415
- 238000010884 ion-beam technique Methods 0.000 description 352
- 230000000875 corresponding effect Effects 0.000 description 51
- 230000005684 electric field Effects 0.000 description 34
- 239000000463 material Substances 0.000 description 32
- 230000003993 interaction Effects 0.000 description 30
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 25
- 239000010931 gold Substances 0.000 description 25
- 229910052737 gold Inorganic materials 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 23
- 238000005259 measurement Methods 0.000 description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 229910052799 carbon Inorganic materials 0.000 description 16
- 238000001514 detection method Methods 0.000 description 16
- 238000010894 electron beam technology Methods 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- 238000003384 imaging method Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000013626 chemical specie Substances 0.000 description 4
- 238000004590 computer program Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010943 off-gassing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000008707 rearrangement Effects 0.000 description 3
- 239000013638 trimer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 230000002411 adverse Effects 0.000 description 1
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- 230000002547 anomalous effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
- H01J2237/30483—Scanning
- H01J2237/30488—Raster scan
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1422907P | 2007-12-17 | 2007-12-17 | |
| US61/014,229 | 2007-12-17 | ||
| PCT/EP2008/067419 WO2009077450A2 (en) | 2007-12-17 | 2008-12-12 | Scanning charged particle beams |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011507202A JP2011507202A (ja) | 2011-03-03 |
| JP2011507202A5 JP2011507202A5 (enExample) | 2011-12-08 |
| JP5473004B2 true JP5473004B2 (ja) | 2014-04-16 |
Family
ID=40497572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010538606A Active JP5473004B2 (ja) | 2007-12-17 | 2008-12-12 | 走査荷電粒子ビーム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8304750B2 (enExample) |
| EP (1) | EP2238606B1 (enExample) |
| JP (1) | JP5473004B2 (enExample) |
| AT (1) | ATE521979T1 (enExample) |
| WO (1) | WO2009077450A2 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2259664B1 (en) | 2004-07-21 | 2017-10-18 | Mevion Medical Systems, Inc. | A programmable radio frequency waveform generator for a synchrocyclotron |
| ES2594619T3 (es) | 2005-11-18 | 2016-12-21 | Mevion Medical Systems, Inc. | Radioterapia con partículas cargadas |
| US8003964B2 (en) | 2007-10-11 | 2011-08-23 | Still River Systems Incorporated | Applying a particle beam to a patient |
| US8933650B2 (en) | 2007-11-30 | 2015-01-13 | Mevion Medical Systems, Inc. | Matching a resonant frequency of a resonant cavity to a frequency of an input voltage |
| US8581523B2 (en) | 2007-11-30 | 2013-11-12 | Mevion Medical Systems, Inc. | Interrupted particle source |
| WO2009114230A2 (en) | 2008-03-07 | 2009-09-17 | Carl Zeiss Smt, Inc. | Reducing particle implantation |
| JP5586593B2 (ja) * | 2008-06-20 | 2014-09-10 | カール ツァイス マイクロスコーピー エルエルシー | 試料検査方法、システム及び構成要素 |
| US8884224B2 (en) * | 2009-04-08 | 2014-11-11 | Hermes Microvision, Inc. | Charged particle beam imaging assembly and imaging method thereof |
| EP2477768B1 (en) | 2009-09-17 | 2019-04-17 | Sciaky Inc. | Electron beam layer manufacturing |
| WO2011041100A1 (en) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Nts, Llc | Variable energy charged particle systems |
| WO2011123195A1 (en) | 2010-03-31 | 2011-10-06 | Sciaky, Inc. | Raster methodology, apparatus and system for electron beam layer manufacturing using closed loop control |
| US8847173B2 (en) * | 2010-08-06 | 2014-09-30 | Hitachi High-Technologies Corporation | Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same |
| TWI447385B (zh) * | 2011-09-16 | 2014-08-01 | Inotera Memories Inc | 一種使用聚焦離子束系統進行晶片平面成像的方法 |
| US9723705B2 (en) | 2012-09-28 | 2017-08-01 | Mevion Medical Systems, Inc. | Controlling intensity of a particle beam |
| TW201434508A (zh) | 2012-09-28 | 2014-09-16 | Mevion Medical Systems Inc | 一粒子束之能量調整 |
| EP2901822B1 (en) | 2012-09-28 | 2020-04-08 | Mevion Medical Systems, Inc. | Focusing a particle beam |
| US9155186B2 (en) | 2012-09-28 | 2015-10-06 | Mevion Medical Systems, Inc. | Focusing a particle beam using magnetic field flutter |
| TW201422278A (zh) | 2012-09-28 | 2014-06-16 | Mevion Medical Systems Inc | 粒子加速器之控制系統 |
| TW201424466A (zh) | 2012-09-28 | 2014-06-16 | Mevion Medical Systems Inc | 磁場再生器 |
| US10254739B2 (en) | 2012-09-28 | 2019-04-09 | Mevion Medical Systems, Inc. | Coil positioning system |
| EP2901824B1 (en) | 2012-09-28 | 2020-04-15 | Mevion Medical Systems, Inc. | Magnetic shims to adjust a position of a main coil and corresponding method |
| EP2900326B1 (en) | 2012-09-28 | 2019-05-01 | Mevion Medical Systems, Inc. | Controlling particle therapy |
| SG11201509479WA (en) | 2013-05-30 | 2015-12-30 | Goldway Technology Ltd | Method of marking material and system therefore, and material marked according to same method |
| US8791656B1 (en) | 2013-05-31 | 2014-07-29 | Mevion Medical Systems, Inc. | Active return system |
| US9730308B2 (en) | 2013-06-12 | 2017-08-08 | Mevion Medical Systems, Inc. | Particle accelerator that produces charged particles having variable energies |
| US9530611B2 (en) | 2013-07-08 | 2016-12-27 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| ES2768659T3 (es) | 2013-09-27 | 2020-06-23 | Mevion Medical Systems Inc | Exploración de haces de partículas |
| WO2015051640A1 (en) | 2013-10-11 | 2015-04-16 | Goldway Technology Limited | Method of providing markings to precious stones including gemstones and diamonds, and markings and marked precious stones marked according to such a method |
| US9962560B2 (en) | 2013-12-20 | 2018-05-08 | Mevion Medical Systems, Inc. | Collimator and energy degrader |
| US10675487B2 (en) | 2013-12-20 | 2020-06-09 | Mevion Medical Systems, Inc. | Energy degrader enabling high-speed energy switching |
| US9661736B2 (en) | 2014-02-20 | 2017-05-23 | Mevion Medical Systems, Inc. | Scanning system for a particle therapy system |
| US9950194B2 (en) | 2014-09-09 | 2018-04-24 | Mevion Medical Systems, Inc. | Patient positioning system |
| US9619728B2 (en) * | 2015-05-31 | 2017-04-11 | Fei Company | Dynamic creation of backup fiducials |
| US10786689B2 (en) | 2015-11-10 | 2020-09-29 | Mevion Medical Systems, Inc. | Adaptive aperture |
| JP7059245B2 (ja) | 2016-07-08 | 2022-04-25 | メビオン・メディカル・システムズ・インコーポレーテッド | 治療計画の決定 |
| US11103730B2 (en) | 2017-02-23 | 2021-08-31 | Mevion Medical Systems, Inc. | Automated treatment in particle therapy |
| CN111093767B (zh) | 2017-06-30 | 2022-08-23 | 美国迈胜医疗系统有限公司 | 使用线性电动机而被控制的可配置准直仪 |
| KR102370458B1 (ko) * | 2017-07-21 | 2022-03-04 | 칼 짜이스 에스엠티 게엠베하 | 포토리소그래피 마스크의 과잉 재료의 폐기를 위한 방법 및 장치 |
| CN113811356B (zh) | 2019-03-08 | 2025-01-03 | 美国迈胜医疗系统有限公司 | 用于粒子治疗系统的准直器和射程调节器 |
| DE102020103339A1 (de) | 2020-02-10 | 2021-08-12 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens |
| US12191110B2 (en) * | 2021-04-20 | 2025-01-07 | The University Of Liverpool | Reduced spatial/temporal overlaps to increase temporal overlaps to increase precision in focused ion beam FIB instruments for milling and imaging and focused ion beams for lithography |
| US11804361B2 (en) * | 2021-05-18 | 2023-10-31 | Nuflare Technology, Inc. | Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0638329B2 (ja) * | 1986-12-29 | 1994-05-18 | セイコー電子工業株式会社 | 集束イオンビーム走査方法 |
| JPH0638329A (ja) | 1992-07-17 | 1994-02-10 | Totoku Electric Co Ltd | 絶縁被膜剥離装置および型巻線の製造方法 |
| JP4054445B2 (ja) * | 1998-06-30 | 2008-02-27 | 株式会社東芝 | 荷電ビーム描画方法 |
| US6614026B1 (en) | 1999-04-15 | 2003-09-02 | Applied Materials, Inc. | Charged particle beam column |
| JP4053723B2 (ja) * | 2000-09-27 | 2008-02-27 | 株式会社東芝 | 露光用マスクの製造方法 |
| US6593152B2 (en) * | 2000-11-02 | 2003-07-15 | Ebara Corporation | Electron beam apparatus and method of manufacturing semiconductor device using the apparatus |
| GB2374723B (en) | 2001-04-20 | 2005-04-20 | Leo Electron Microscopy Ltd | Scanning electron microscope |
| JP2003045780A (ja) * | 2001-07-30 | 2003-02-14 | Nec Corp | マスク描画データの作成方法 |
| DE10233002B4 (de) * | 2002-07-19 | 2006-05-04 | Leo Elektronenmikroskopie Gmbh | Objektivlinse für ein Elektronenmikroskopiesystem und Elektronenmikroskopiesystem |
| DE10236738B9 (de) * | 2002-08-09 | 2010-07-15 | Carl Zeiss Nts Gmbh | Elektronenmikroskopiesystem und Elektronenmikroskopieverfahren |
| DE10331137B4 (de) | 2003-07-09 | 2008-04-30 | Carl Zeiss Nts Gmbh | Detektorsystem für ein Rasterelektronenmikroskop und Rasterelektronenmikroskop mit einem entsprechenden Detektorsystem |
| US7557359B2 (en) | 2003-10-16 | 2009-07-07 | Alis Corporation | Ion sources, systems and methods |
| US7511279B2 (en) * | 2003-10-16 | 2009-03-31 | Alis Corporation | Ion sources, systems and methods |
| US7259373B2 (en) | 2005-07-08 | 2007-08-21 | Nexgensemi Holdings Corporation | Apparatus and method for controlled particle beam manufacturing |
| JP4748714B2 (ja) * | 2005-10-28 | 2011-08-17 | エスアイアイ・ナノテクノロジー株式会社 | 荷電粒子ビーム走査照射方法、荷電粒子ビーム装置、試料観察方法、及び、試料加工方法 |
| WO2009114230A2 (en) * | 2008-03-07 | 2009-09-17 | Carl Zeiss Smt, Inc. | Reducing particle implantation |
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2008
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- 2008-12-12 AT AT08862809T patent/ATE521979T1/de not_active IP Right Cessation
- 2008-12-12 EP EP08862809A patent/EP2238606B1/en active Active
- 2008-12-12 WO PCT/EP2008/067419 patent/WO2009077450A2/en not_active Ceased
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|---|---|
| EP2238606B1 (en) | 2011-08-24 |
| US8304750B2 (en) | 2012-11-06 |
| WO2009077450A3 (en) | 2009-12-03 |
| JP2011507202A (ja) | 2011-03-03 |
| EP2238606A2 (en) | 2010-10-13 |
| ATE521979T1 (de) | 2011-09-15 |
| WO2009077450A2 (en) | 2009-06-25 |
| US20100294930A1 (en) | 2010-11-25 |
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