JP2011507202A5 - - Google Patents

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Publication number
JP2011507202A5
JP2011507202A5 JP2010538606A JP2010538606A JP2011507202A5 JP 2011507202 A5 JP2011507202 A5 JP 2011507202A5 JP 2010538606 A JP2010538606 A JP 2010538606A JP 2010538606 A JP2010538606 A JP 2010538606A JP 2011507202 A5 JP2011507202 A5 JP 2011507202A5
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JP
Japan
Prior art keywords
charged particle
sample
particle beam
portions
region
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JP2010538606A
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English (en)
Japanese (ja)
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JP5473004B2 (ja
JP2011507202A (ja
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Priority claimed from PCT/EP2008/067419 external-priority patent/WO2009077450A2/en
Publication of JP2011507202A publication Critical patent/JP2011507202A/ja
Publication of JP2011507202A5 publication Critical patent/JP2011507202A5/ja
Application granted granted Critical
Publication of JP5473004B2 publication Critical patent/JP5473004B2/ja
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JP2010538606A 2007-12-17 2008-12-12 走査荷電粒子ビーム Active JP5473004B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1422907P 2007-12-17 2007-12-17
US61/014,229 2007-12-17
PCT/EP2008/067419 WO2009077450A2 (en) 2007-12-17 2008-12-12 Scanning charged particle beams

Publications (3)

Publication Number Publication Date
JP2011507202A JP2011507202A (ja) 2011-03-03
JP2011507202A5 true JP2011507202A5 (enExample) 2011-12-08
JP5473004B2 JP5473004B2 (ja) 2014-04-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538606A Active JP5473004B2 (ja) 2007-12-17 2008-12-12 走査荷電粒子ビーム

Country Status (5)

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US (1) US8304750B2 (enExample)
EP (1) EP2238606B1 (enExample)
JP (1) JP5473004B2 (enExample)
AT (1) ATE521979T1 (enExample)
WO (1) WO2009077450A2 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102036461B (zh) 2004-07-21 2012-11-14 梅威申医疗系统有限公司 用于同步回旋加速器的可编程的射频波形发生器
CN101361156B (zh) 2005-11-18 2012-12-12 梅维昂医疗系统股份有限公司 用于实施放射治疗的设备
US8003964B2 (en) 2007-10-11 2011-08-23 Still River Systems Incorporated Applying a particle beam to a patient
US8933650B2 (en) 2007-11-30 2015-01-13 Mevion Medical Systems, Inc. Matching a resonant frequency of a resonant cavity to a frequency of an input voltage
US8581523B2 (en) 2007-11-30 2013-11-12 Mevion Medical Systems, Inc. Interrupted particle source
WO2009114230A2 (en) * 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation
US8669525B2 (en) * 2008-06-20 2014-03-11 Carl Zeiss Microscopy, Llc Sample inspection methods, systems and components
US8884224B2 (en) * 2009-04-08 2014-11-11 Hermes Microvision, Inc. Charged particle beam imaging assembly and imaging method thereof
EP3479933A1 (en) 2009-09-17 2019-05-08 Sciaky Inc. Electron beam layer manufacturing apparatus
WO2011041100A1 (en) * 2009-09-30 2011-04-07 Carl Zeiss Nts, Llc Variable energy charged particle systems
EP2555902B1 (en) 2010-03-31 2018-04-25 Sciaky Inc. Raster methodology for electron beam layer manufacturing using closed loop control
WO2012017789A1 (ja) * 2010-08-06 2012-02-09 株式会社日立ハイテクノロジーズ ガス電解電離イオン源及びその使用方法、並びに、イオンビーム装置、並びに、エミッタチップ及びその製造方法
TWI447385B (zh) * 2011-09-16 2014-08-01 華亞科技股份有限公司 一種使用聚焦離子束系統進行晶片平面成像的方法
WO2014052718A2 (en) 2012-09-28 2014-04-03 Mevion Medical Systems, Inc. Focusing a particle beam
TW201424466A (zh) 2012-09-28 2014-06-16 Mevion Medical Systems Inc 磁場再生器
CN104813750B (zh) 2012-09-28 2018-01-12 梅维昂医疗系统股份有限公司 调整主线圈位置的磁垫片
JP6367201B2 (ja) 2012-09-28 2018-08-01 メビオン・メディカル・システムズ・インコーポレーテッド 粒子ビームの強度の制御
WO2014052734A1 (en) 2012-09-28 2014-04-03 Mevion Medical Systems, Inc. Controlling particle therapy
US10254739B2 (en) 2012-09-28 2019-04-09 Mevion Medical Systems, Inc. Coil positioning system
CN104813747B (zh) 2012-09-28 2018-02-02 梅维昂医疗系统股份有限公司 使用磁场颤振聚焦粒子束
EP3342462B1 (en) 2012-09-28 2019-05-01 Mevion Medical Systems, Inc. Adjusting energy of a particle beam
US9681531B2 (en) 2012-09-28 2017-06-13 Mevion Medical Systems, Inc. Control system for a particle accelerator
JP6291568B2 (ja) 2013-05-30 2018-03-14 チョウ タイ フック ジュエリー カンパニー リミテッド 材料にマーキングする方法、材料にマーキングするためのシステム、及び該方法によってマーキングされた材料
US8791656B1 (en) 2013-05-31 2014-07-29 Mevion Medical Systems, Inc. Active return system
US9730308B2 (en) 2013-06-12 2017-08-08 Mevion Medical Systems, Inc. Particle accelerator that produces charged particles having variable energies
US9218934B2 (en) 2013-07-08 2015-12-22 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system
CN110237447B (zh) 2013-09-27 2021-11-02 梅维昂医疗系统股份有限公司 粒子治疗系统
JP6246348B2 (ja) 2013-10-11 2017-12-13 チョウ タイ フック ジュエリー カンパニー リミテッド ジェムストーン及びダイヤモンドを含む宝石にマーキングを施す方法及び当該方法に従ってマーキングされた宝石
US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US9661736B2 (en) 2014-02-20 2017-05-23 Mevion Medical Systems, Inc. Scanning system for a particle therapy system
US9950194B2 (en) 2014-09-09 2018-04-24 Mevion Medical Systems, Inc. Patient positioning system
US9619728B2 (en) * 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
US10786689B2 (en) 2015-11-10 2020-09-29 Mevion Medical Systems, Inc. Adaptive aperture
CN109803723B (zh) 2016-07-08 2021-05-14 迈胜医疗设备有限公司 一种粒子疗法系统
US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
JP6940676B2 (ja) 2017-06-30 2021-09-29 メビオン・メディカル・システムズ・インコーポレーテッド リニアモーターを使用して制御される構成可能コリメータ
CN118192160A (zh) * 2017-07-21 2024-06-14 卡尔蔡司Smt有限责任公司 用于处理光刻掩模的多余材料的方法与设备
WO2020185544A1 (en) 2019-03-08 2020-09-17 Mevion Medical Systems, Inc. Delivery of radiation by column and generating a treatment plan therefor
DE102020103339A1 (de) 2020-02-10 2021-08-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
US12191110B2 (en) * 2021-04-20 2025-01-07 The University Of Liverpool Reduced spatial/temporal overlaps to increase temporal overlaps to increase precision in focused ion beam FIB instruments for milling and imaging and focused ion beams for lithography
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638329B2 (ja) * 1986-12-29 1994-05-18 セイコー電子工業株式会社 集束イオンビーム走査方法
JPH0638329A (ja) 1992-07-17 1994-02-10 Totoku Electric Co Ltd 絶縁被膜剥離装置および型巻線の製造方法
JP4054445B2 (ja) * 1998-06-30 2008-02-27 株式会社東芝 荷電ビーム描画方法
US6614026B1 (en) 1999-04-15 2003-09-02 Applied Materials, Inc. Charged particle beam column
JP4053723B2 (ja) * 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法
EP1271605A4 (en) * 2000-11-02 2009-09-02 Ebara Corp ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING SAID APPARATUS
GB2374723B (en) * 2001-04-20 2005-04-20 Leo Electron Microscopy Ltd Scanning electron microscope
JP2003045780A (ja) * 2001-07-30 2003-02-14 Nec Corp マスク描画データの作成方法
DE10233002B4 (de) 2002-07-19 2006-05-04 Leo Elektronenmikroskopie Gmbh Objektivlinse für ein Elektronenmikroskopiesystem und Elektronenmikroskopiesystem
DE10236738B9 (de) * 2002-08-09 2010-07-15 Carl Zeiss Nts Gmbh Elektronenmikroskopiesystem und Elektronenmikroskopieverfahren
DE10331137B4 (de) 2003-07-09 2008-04-30 Carl Zeiss Nts Gmbh Detektorsystem für ein Rasterelektronenmikroskop und Rasterelektronenmikroskop mit einem entsprechenden Detektorsystem
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7259373B2 (en) 2005-07-08 2007-08-21 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
JP4748714B2 (ja) * 2005-10-28 2011-08-17 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム走査照射方法、荷電粒子ビーム装置、試料観察方法、及び、試料加工方法
WO2009114230A2 (en) * 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation

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