JP5472832B2 - 磁気メモリ - Google Patents

磁気メモリ Download PDF

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Publication number
JP5472832B2
JP5472832B2 JP2011533007A JP2011533007A JP5472832B2 JP 5472832 B2 JP5472832 B2 JP 5472832B2 JP 2011533007 A JP2011533007 A JP 2011533007A JP 2011533007 A JP2011533007 A JP 2011533007A JP 5472832 B2 JP5472832 B2 JP 5472832B2
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JP
Japan
Prior art keywords
layer
magnetic recording
recording layer
nonmagnetic
spin
Prior art date
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Active
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JP2011533007A
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English (en)
Japanese (ja)
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JPWO2011037143A1 (ja
Inventor
貞彦 三浦
哲広 鈴木
則和 大嶋
信作 齊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to JP2011533007A priority Critical patent/JP5472832B2/ja
Publication of JPWO2011037143A1 publication Critical patent/JPWO2011037143A1/ja
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Publication of JP5472832B2 publication Critical patent/JP5472832B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2011533007A 2009-09-28 2010-09-22 磁気メモリ Active JP5472832B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011533007A JP5472832B2 (ja) 2009-09-28 2010-09-22 磁気メモリ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009222979 2009-09-28
JP2009222979 2009-09-28
PCT/JP2010/066423 WO2011037143A1 (fr) 2009-09-28 2010-09-22 Mémoire magnétique
JP2011533007A JP5472832B2 (ja) 2009-09-28 2010-09-22 磁気メモリ

Publications (2)

Publication Number Publication Date
JPWO2011037143A1 JPWO2011037143A1 (ja) 2013-02-21
JP5472832B2 true JP5472832B2 (ja) 2014-04-16

Family

ID=43795889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011533007A Active JP5472832B2 (ja) 2009-09-28 2010-09-22 磁気メモリ

Country Status (2)

Country Link
JP (1) JP5472832B2 (fr)
WO (1) WO2011037143A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5814680B2 (ja) * 2011-07-29 2015-11-17 株式会社東芝 磁気抵抗素子及び磁気メモリ
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3004577A1 (fr) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3009421B1 (fr) * 2013-07-30 2017-02-24 Commissariat Energie Atomique Cellule memoire non volatile
JP6089081B1 (ja) 2015-09-16 2017-03-01 株式会社東芝 磁気メモリ
JP7211273B2 (ja) * 2019-06-17 2023-01-24 株式会社アイシン 半導体記憶装置
CN113614920A (zh) * 2020-03-05 2021-11-05 Tdk株式会社 磁记录阵列

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116888A (ja) * 2003-10-09 2005-04-28 Toshiba Corp 磁気メモリ
JP2006269885A (ja) * 2005-03-25 2006-10-05 Sony Corp スピン注入型磁気抵抗効果素子
JP2008171862A (ja) * 2007-01-09 2008-07-24 Nec Corp 磁気抵抗効果素子及びｍｒａｍ
JP2009081390A (ja) * 2007-09-27 2009-04-16 Nec Corp 磁壁移動型ｍｒａｍ及びその製造方法
WO2009110530A1 (fr) * 2008-03-07 2009-09-11 日本電気株式会社 Dispositif semi-conducteur

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116888A (ja) * 2003-10-09 2005-04-28 Toshiba Corp 磁気メモリ
JP2006269885A (ja) * 2005-03-25 2006-10-05 Sony Corp スピン注入型磁気抵抗効果素子
JP2008171862A (ja) * 2007-01-09 2008-07-24 Nec Corp 磁気抵抗効果素子及びｍｒａｍ
JP2009081390A (ja) * 2007-09-27 2009-04-16 Nec Corp 磁壁移動型ｍｒａｍ及びその製造方法
WO2009110530A1 (fr) * 2008-03-07 2009-09-11 日本電気株式会社 Dispositif semi-conducteur

Also Published As

Publication number Publication date
WO2011037143A1 (fr) 2011-03-31
JPWO2011037143A1 (ja) 2013-02-21

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