WO2009122992A1 - Mémoire magnétorésistive - Google Patents

Mémoire magnétorésistive Download PDF

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Publication number
WO2009122992A1
WO2009122992A1 PCT/JP2009/056053 JP2009056053W WO2009122992A1 WO 2009122992 A1 WO2009122992 A1 WO 2009122992A1 JP 2009056053 W JP2009056053 W JP 2009056053W WO 2009122992 A1 WO2009122992 A1 WO 2009122992A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetization
layer
film
magnetic layer
magnetoresistive
Prior art date
Application number
PCT/JP2009/056053
Other languages
English (en)
Japanese (ja)
Inventor
有光 加藤
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Publication of WO2009122992A1 publication Critical patent/WO2009122992A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

La mémoire magnétorésistive selon l’invention comprend des éléments magnétorésistifs (1). Chaque élément magnétorésistif (1) présente une première couche magnétique (10), une deuxième couche magnétique (20), et une troisième couche magnétique (30). La direction de la magnétisation de la première couche magnétique (10) est fixée dans une première direction. La deuxième couche magnétique (20) est connectée à la première couche magnétique (10) par l'intermédiaire d'une couche non magnétique (41) et présente une première surface (S1) qui est en contact avec la couche non magnétique (41) et une deuxième surface (S2) opposée à la première surface (S1). La troisième couche magnétique (30) est formée sur la deuxième surface (S2) et couplée de manière magnétique à la deuxième couche magnétique (20). La direction de la magnétisation de la troisième couche magnétique (30) est fixée dans une direction différente de celle de la première direction. La direction de la magnétisation de la deuxième couche magnétique (20) est une deuxième direction qui n'est ni parallèle ni antiparallèle à la première direction dans la deuxième surface (S2), et varie à partir de la deuxième direction vers une direction parallèle ou antiparallèle à la première direction à mesure que la distance augmente à partir de la deuxième surface (S2) vers la première surface (S1).
PCT/JP2009/056053 2008-04-03 2009-03-26 Mémoire magnétorésistive WO2009122992A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008097049 2008-04-03
JP2008-097049 2008-04-03

Publications (1)

Publication Number Publication Date
WO2009122992A1 true WO2009122992A1 (fr) 2009-10-08

Family

ID=41135372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/056053 WO2009122992A1 (fr) 2008-04-03 2009-03-26 Mémoire magnétorésistive

Country Status (1)

Country Link
WO (1) WO2009122992A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012146984A (ja) * 2011-01-13 2012-08-02 Crocus Technology Sa 分極層を備える磁気トンネル接合

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261352A (ja) * 2000-12-07 2002-09-13 Commiss Energ Atom 記憶機能を有する磁気スピン極性化および磁化回転装置および当該装置を用いた書き込み方法
JP2003115621A (ja) * 2001-10-05 2003-04-18 Canon Inc トンネル磁気抵抗効果素子およびその作製方法
JP2004165441A (ja) * 2002-11-13 2004-06-10 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261352A (ja) * 2000-12-07 2002-09-13 Commiss Energ Atom 記憶機能を有する磁気スピン極性化および磁化回転装置および当該装置を用いた書き込み方法
JP2003115621A (ja) * 2001-10-05 2003-04-18 Canon Inc トンネル磁気抵抗効果素子およびその作製方法
JP2004165441A (ja) * 2002-11-13 2004-06-10 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012146984A (ja) * 2011-01-13 2012-08-02 Crocus Technology Sa 分極層を備える磁気トンネル接合

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