JP5466096B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5466096B2 JP5466096B2 JP2010140941A JP2010140941A JP5466096B2 JP 5466096 B2 JP5466096 B2 JP 5466096B2 JP 2010140941 A JP2010140941 A JP 2010140941A JP 2010140941 A JP2010140941 A JP 2010140941A JP 5466096 B2 JP5466096 B2 JP 5466096B2
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- JP
- Japan
- Prior art keywords
- wiring layer
- layer
- insulating layer
- forming
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 claims description 71
- 239000004020 conductor Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 229910000679 solder Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005422 blasting Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000007788 roughening Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 184
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 65
- 239000011889 copper foil Substances 0.000 description 55
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 52
- 239000011347 resin Substances 0.000 description 49
- 229920005989 resin Polymers 0.000 description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 239000011229 interlayer Substances 0.000 description 24
- 239000010949 copper Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- 239000010931 gold Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002920 hazardous waste Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010140941A JP5466096B2 (ja) | 2010-06-21 | 2010-06-21 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010140941A JP5466096B2 (ja) | 2010-06-21 | 2010-06-21 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012004506A JP2012004506A (ja) | 2012-01-05 |
| JP2012004506A5 JP2012004506A5 (enrdf_load_stackoverflow) | 2013-05-16 |
| JP5466096B2 true JP5466096B2 (ja) | 2014-04-09 |
Family
ID=45536109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010140941A Active JP5466096B2 (ja) | 2010-06-21 | 2010-06-21 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5466096B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5846953B2 (ja) * | 2012-02-15 | 2016-01-20 | アルプス電気株式会社 | 入力装置及びその製造方法 |
| US9082764B2 (en) * | 2012-03-05 | 2015-07-14 | Corning Incorporated | Three-dimensional integrated circuit which incorporates a glass interposer and method for fabricating the same |
| JP2014187334A (ja) * | 2013-03-25 | 2014-10-02 | Disco Abrasive Syst Ltd | ウエハレベルパッケージ構造およびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003101230A (ja) * | 2001-09-21 | 2003-04-04 | Fujitsu Ltd | 多層プリント配線板の製造方法 |
| JP2004055628A (ja) * | 2002-07-17 | 2004-02-19 | Dainippon Printing Co Ltd | ウエハレベルの半導体装置及びその作製方法 |
| JP4995551B2 (ja) * | 2006-12-01 | 2012-08-08 | ローム株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP4121542B1 (ja) * | 2007-06-18 | 2008-07-23 | 新光電気工業株式会社 | 電子装置の製造方法 |
| JP4953132B2 (ja) * | 2007-09-13 | 2012-06-13 | 日本電気株式会社 | 半導体装置 |
| JP2010021194A (ja) * | 2008-07-08 | 2010-01-28 | Toshiba Corp | 積層型半導体装置、及び積層型半導体装置の製造方法 |
| JP4787296B2 (ja) * | 2008-07-18 | 2011-10-05 | Ｔｄｋ株式会社 | 半導体内蔵モジュール及びその製造方法 |
-
2010
- 2010-06-21 JP JP2010140941A patent/JP5466096B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012004506A (ja) | 2012-01-05 |
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