JP5465828B2 - 基板処理装置及び半導体デバイスの製造方法 - Google Patents

基板処理装置及び半導体デバイスの製造方法 Download PDF

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Publication number
JP5465828B2
JP5465828B2 JP2007257768A JP2007257768A JP5465828B2 JP 5465828 B2 JP5465828 B2 JP 5465828B2 JP 2007257768 A JP2007257768 A JP 2007257768A JP 2007257768 A JP2007257768 A JP 2007257768A JP 5465828 B2 JP5465828 B2 JP 5465828B2
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Prior art keywords
lamp
substrate
heating
heating unit
processing chamber
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Japanese (ja)
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JP2009088348A5 (enrdf_load_stackoverflow
JP2009088348A (ja
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雅之 富田
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2007257768A 2007-10-01 2007-10-01 基板処理装置及び半導体デバイスの製造方法 Active JP5465828B2 (ja)

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JP2007257768A JP5465828B2 (ja) 2007-10-01 2007-10-01 基板処理装置及び半導体デバイスの製造方法

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JP2007257768A JP5465828B2 (ja) 2007-10-01 2007-10-01 基板処理装置及び半導体デバイスの製造方法

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JP2009088348A JP2009088348A (ja) 2009-04-23
JP2009088348A5 JP2009088348A5 (enrdf_load_stackoverflow) 2010-11-18
JP5465828B2 true JP5465828B2 (ja) 2014-04-09

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101331420B1 (ko) 2011-03-04 2013-11-21 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
JP6012933B2 (ja) * 2011-04-26 2016-10-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および基板処理方法
CN113614892B (zh) * 2019-03-20 2024-04-12 株式会社国际电气 基板处理装置、处理容器、反射体和半导体装置的制造方法
KR102656121B1 (ko) * 2021-12-24 2024-04-12 (주)보부하이테크 용접 결함 및 크랙 발생을 개선한 히터 구조
KR20250048007A (ko) * 2023-09-27 2025-04-07 주식회사 히타치하이테크 웨이퍼 처리 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154618A (ja) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd 気相成長装置
JPH0532956Y2 (enrdf_load_stackoverflow) * 1987-09-24 1993-08-23
JPH08292667A (ja) * 1995-04-21 1996-11-05 Tec Corp 加熱定着装置
JP2000114196A (ja) * 1998-08-06 2000-04-21 Ushio Inc 光照射式加熱装置の冷却構造
JP3733811B2 (ja) * 1999-02-16 2006-01-11 ウシオ電機株式会社 光照射式加熱処理装置
JP4004765B2 (ja) * 2000-10-10 2007-11-07 株式会社半導体エネルギー研究所 半導体装置の作製方法

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